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TSHA440.
Vishay Telefunken
GaAlAs Infrared Emitting Diodes in ø 3 mm (T–1)
Package
Description
The TSHA44..series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded
in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs
technology these high intensity emitters feature about
50 % radiant power improvement.
Features
D
Extra high radiant power
D
High radiant intensity for long transmission distance
D
Suitable for high pulse current operation
D
Standard T–1(ø 3 mm) package for low space
application
D
Angle of half intensity ϕ = ± 20
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
l
= 875 nm
p
°
94 8398
Applications
Infrared remote control and free air transmission systems with high power requirements in combination with PIN
photodiodes or phototransistors.
Because of the very low radiance absorption in glass at the wavelength of 875 nm, this emitter series is also
suitable for systems with panes in the transmission range between emitter and detector.
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T = 0.5, tp = 100 ms I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
t x 5sec, 2 mm from case
FSM
T
R
F
FM
V
j
amb
stg
sd
thJA
5 V
100 mA
200 mA
2 A
180 mW
100
–55...+100
–55...+100
260
450 K/W
°
C
°
C
°
C
°
C
Document Number 81017
Rev. 2, 20-May-99
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1 (5)
Page 2
TSHA440.
g
y
F
F
m
F
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
IF = 1.5 A, tp = 100 ms V
Temp. Coefficient of V
F
IF = 100mA TK
Reverse Current VR = 5 V I
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Temp. Coefficient of
f
e
IF = 100 mA TK
F
F
VF
R
j
f
e
Angle of Half Intensity ϕ ±20 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
IF = 100 mA TK
Rise Time IF = 100 mA t
IF = 1.5 A t
Fall Time IF = 100 mA t
IF = 1.5 A t
l
Dl
p
l
p
r
r
f
f
1.5 1.8 V
3.2 4.9 V
–1.6 mV/K
100
m
20 pF
–0.7 %/K
875 nm
80 nm
0.2 nm/K
600 ns
300 ns
600 ns
300 ns
A
Type Dedicated Characteristics
T
= 25_C
amb
Parameter Test Conditions Type Symbol Min Typ Max Unit
Radiant Intensity IF=100mA, tp=20ms TSHA4400 I
TSHA4401 I
IF=1.5A, tp=100ms TSHA4400 I
TSHA4401 I
Radiant Power IF=100mA, tp=20ms TSHA4400
TSHA4401
Typical Characteristics (T
250
200
150
R
thJA
100
V
50
P – Power Dissipation ( mW )
= 25_C unless otherwise specified)
amb
125
100
75
50
F
I – Forward Current ( mA )
25
e
e
e
e
f
e
f
e
12 20 mW/sr
16 30 mW/sr
140 240 mW/sr
190 360 mW/sr
20 mW
24 mW
0
020406080
T
12789
Figure 1. Power Dissipation vs. Ambient Temperature
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2 (5) Rev. 2, 20-May-99
– Ambient Temperature ( °C )
amb
100
0
020406080
T
94 7941 e
Figure 2. Forward Current vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
Document Number 81017
100
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TSHA440.
Vishay Telefunken
1
10
tp/T=0.01, IFM = 2 A
0.02
0
10
0.05
0.1
F
I – Forward Current ( A )
0.2
0.5
–1
10
–2
10
–1
10
0
10
1
10
2
10
tp – Pulse Duration ( ms )94 7947 e
Figure 3. Pulse Forward Current vs. Pulse Duration
4
10
tp = 100 ms
t
/T = 0.001
3
10
p
1000
TSHA 4401
100
TSHA 4400
10
e
I – Radiant Intensity ( mW/sr )
1
0
10
1
10
2
10
3
10
10
IF – Forward Current ( mA )94 7942 e
Figure 6. Radiant Intensity vs. Forward Current
1000
100
10
4
2
10
F
I – Forward Current ( mA )
1
10
0123
V
94 8005 e
– Forward Voltage ( V )
F
Figure 4. Forward Current vs. Forward Voltage
1.2
1.1
IF = 10 mA
1.0
0.9
Frel
0.8
V – Relative Forward Voltage
0.7
020406080
T
94 7990 e
– Ambient Temperature ( °C )
amb
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
100
– Radiant Power ( mW )
1
e
F
4
0.1
0
10
1
10
2
10
3
10
4
10
IF – Forward Current ( mA )94 7943 e
Figure 7. Radiant Power vs. Forward Current
1.6
1.2
IF = 20 mA
F
0.8
e rel e rel
I ;
0.4
0
–10 10 500 100
T
94 8020 e
– Ambient Temperature ( °C )
amb
140
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
Document Number 81017
Rev. 2, 20-May-99
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TSHA440.
Vishay Telefunken
1.25
1.0
0.75
0.5
– Relative Radiant Power
e
F
0.25
0
780 880
94 8000 e
IF = 100 mA
F
(l)
=
e
Fe(l)/
rel
l
– Wavelength ( nm )
Fe(
lp)
980
1.0
0.9
0.8
e rel
0.7
I – Relative Radiant Intensity
0.4 0.2 0 0.2 0.4
0.6
94 7944 e
0°
10°20
°
30°
40°
50°
60°
70°
80°
0.6
Figure 9. Relative Radiant Power vs. Wavelength
Dimensions in mm
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
95 10951
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Document Number 81017
Page 5
TSHA440.
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 81017
Rev. 2, 20-May-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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