Vishay T..RIA Series Data Sheet

Medium Power Phase Control Thyristors

D-55

PRODUCT SUMMARY

I

T(AV)

Vishay High Power Products

(Power Modules), 50 A/70 A/90 A

FEATURES

• Electrically isolated base plate

50 A/70 A/90 A

• Types up to 1200 V

• 3500 V

isolating voltage

RMS

• Simplified mechanical designs, rapid assembly

• High surge capability

• Large creepage distances

• UL E78996 approved

• RoHS compliant

• Designed and qualified for industrial level

DESCRIPTION

These series of T-modules are intended for general purpose
applications such as battery chargers, welders and plating
equipment, regulated power supplies and temperature and
speed control circuits. The semiconductors are electrically
isolated from the metal base, allowing common heatsinks
and compact assemblies to be built.

RRM

T..RIA Series

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS T50RIA T70RIA T90RIA UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

2

I

√t 85 500 138 500 159 100 A2√s

V

RRM

T

J

70 °C 50 70 90 A

80 110 141 A

50 Hz 1310 1660 1780

60 Hz 1370 1740 1870

50 Hz 8550 13 860 15 900

60 Hz 7800 12 650 14 500

Range 100 to 1200 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE
NUMBER

T50RIA
T70RIA
T90RIA

V

VOLTAGE

CODE

10 100 150

20 200 300

40 400 500

60 600 700

80 800 900

100 1000 1100

120 1200 1300

RRM/VDRM

, MAXIMUM REPETITIVE

PEAK REVERSE AND PEAK

OFF-STATE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM/IDRM

AT T

A

A2s

MAXIMUM
= 25 °C

J

µA

100

Document Number: 93756 For technical questions, contact: [e-mail]
Revision: 03-Jun-08 1

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T..RIA Series

Vishay High Power Products

Medium Power Phase Control Thyristors

(Power Modules), 50 A/70 A/90 A

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS T50RIA T70RIA T90RIA UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
on-state, non-repetitive
surge current

Maximum I

Maximum I

Low level value of
threshold voltage

High level value of
threshold voltage

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 85 500 138 500 159 100 A2√s

V

V

Low level value of
on-state slope resistance

High level value of
on-state slope resistance

Maximum on-state voltage drop V

Maximum forward voltage drop V

Maximum holding current I

Maximum latching current I

T(AV)

180° conduction, half sine wave

80 110 141 A

I

TSM

T(TO)1

T(TO)2

r

t1

r

t2

TM

FM

H

L

t = 10 ms

t = 8.3 ms 1370 1740 1870

t = 10 ms

t = 8.3 ms 1150 1460 1570

t = 10 ms

t = 8.3 ms 7800 12 650 14 500

t = 10 ms

t = 8.3 ms 5520 8950 10 270

(16.7 % x π x I

(I > π x I

(16.7 % x π x I

(I > π x I

ITM = π x I
Average power = V

ITM = π x I
Average power = V

Anode supply = 6 V, initial IT = 30 A, TJ = 25 °C 200 200 200
Anode supply = 6 V, resistive load = 10 Ω

Gate pulse: 10 V, 100 µs, T

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sine half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ maximum 1.13 0.88 0.88

T(AV)

< I < π x I

T(AV)

), TJ maximum 3.3 3.2 2.6

T(AV)

, TJ = 25 °C, tp = 400 µs square

T(AV)

, TJ = 25 °C, tp = 400 µs square

T(AV)

T(TO)

T(TO)

x I

x I

), TJ maximum 0.97 0.77 0.78

T(AV)

), TJ maximum 4.1 3.6 2.9

T(AV)

T(RMS)

T(RMS)

2

)

2

)

+ rf x (I

T(AV)

+ rf x (I

T(AV)

= 25 °C

J

50 70 90 A

70 70 70 °C

1310 1660 1780

1100 1400 1500

8550 13 860 15 900

6050 9800 11 250

1.60 1.55 1.55 V

1.60 1.55 1.55 V

400 400 400

A

A

V

mΩ

mA

2

s

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Typical turn-on time t

Typical turn-off time t

TJ = 25 °C, Vd = 50 % V

gd

rr

q

= 500 mA, tr ≤ 0.5, tp ≥ 6 µs

I

g

TJ = 125 °C, ITM = 50 A, tp = 300 µs, dI/dt = 10 A/µs 3

TJ = TJ maximum, ITM = 50 A, tp = 300 µs

-dI/dt = 15 A/µs, V

= 100 V, linear to 80 % V

R

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2 Revision: 03-Jun-08

, ITM = 50 A

DRM

DRM

0.9

µsTypical reverse recovery time t

110

Document Number: 93756

T..RIA Series

Medium Power Phase Control Thyristors

Vishay High Power Products

(Power Modules), 50 A/70 A/90 A

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak reverse and
off-state leakage current

RMS isolation voltage V

Critical rate of rise of
off-state voltage

Note

(1)

Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. T90RIA80S90

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS T50RIA T70RIA T90RIA UNITS

Maximum peak gate power P

Maximum average
gate power

Maximum peak gate current I

Maximum peak
negative gate voltage

Maximum required
DC gate voltage to trigger

Maximum required
DC gate current to trigger

Maximum gate voltage
that will not trigger

Maximum gate current
that will not trigger

Maximum rate of rise of
turned-on current

,

I

RRM

I

DRM

ISOL

dV/dt T

GM

P

G(AV)

GM

-V

GT

V

GT

I

GT

V

GD

I

GD

dI/dt

TJ = TJ maximum 15 mA

50 Hz, circuit to base, all terminals shorted, TJ = 25 °C, t = 1 s 3500 V

= TJ maximum, linear to 80 % rated V

J

DRM

(1)

500 V/µs

TJ = TJ maximum, tp ≤ 5 ms 10 12 12

TJ = TJ maximum, f = 50 Hz 2.5 3 3

2.5 3 3 A

TJ = TJ maximum, tp ≤ 5 ms

TJ = - 40 °C

= 25 °C 2.5 2.5 2.5

J

= TJ maximum 1.5 1.5 1.5

T

J

TJ = - 40 °C 250 270 270

= 25 °C 100 120 120

J

= TJ maximum 50 60 60

T

J

Anode supply = 6 V,
resistive load; Ra = 1 Ω

10 10 10 V

4.0 4.0 4.0

0.2 0.2 0.2 V

TJ = TJ maximum, rated V

DRM

applied

5.0 6.0 6.0 mA

= 0.67 rated V

V

D

I

= 400 mA for T50RIA and Ig = 500 mA for T70RIA/T90RIA;

g

t

< 0.5 µs, tp ≥ 6 µs

r

, ITM = 2 x rated dI/dt

DRM

For repetitive value use 40 % non-repetitive
Per JEDEC STD. RS397, 5.2.2.6

200 200 200

180 180 180

160 160 160

150 150 150

W

VT

mAT

A/µs

Document Number: 93756 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 03-Jun-08 3

T..RIA Series

Vishay High Power Products

Medium Power Phase Control Thyristors

(Power Modules), 50 A/70 A/90 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS T50RIA T70RIA T90RIA UNITS

Maximum junction operating
temperature range

Maximum storage
temperature range

Maximum thermal resistance,
junction to case per junction

Maximum thermal resistance,
case to heatsink

Mounting torque, ± 10 %

Approximate weight 54 g

Case style T-module D-55

Note

(1)

A mounting compund is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound

to heatsink

terminals M5 screw terminals 3 ± 10 %

T

J

T

Stg

R

thJC

R

thCS

DC operation 0.65 0.50 0.38

Mounting surface, smooth, flat and greased 0.2

Non-lubricated
threads

M3.5 mounting screws

(1)

- 40 to 125

- 40 to 150

1.3 ± 10 %

°C

K/W

Nm

ΔR CONDUCTION PER JUNCTION

DEVICES

T50RIA 0.08 0.10 0.13 0.19 0.31 0.06 0.10 0.14 0.20 0.32

T90RIA 0.05 0.06 0.08 0.12 0.20 0.04 0.06 0.09 0.12 0.20

Note

• Table shows the increment of thermal resistance R

SINUSOIDAL CONDUCTION AT T

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM

J

when devices operate at different conduction angles than DC

thJC

UNITS

K/WT70RIA 0.07 0.08 0.10 0.14 0.24 0.05 0.08 0.11 0.15 0.24

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4 Revision: 03-Jun-08

Document Number: 93756