P-Channel 60 V (D-S) MOSFET
Marking Code: 6Kwll
6K = Part Number Code for TP0610K
w = Week Code
ll = Lot Traceability
TO-236
(SOT-23)
Top View
2
1
S
D
G
3
Ordering Information:
TP0610K-T1-E3 (Lead (Pb)-free)
TP0610K-T1-GE3 (Lead (Pb)-free and Halogen-free)
TP0610K
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) R
- 60 6 at V
()V
DS(on)
= - 10 V - 1 to - 3 - 185
GS
(V) ID (mA)
GS(th)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• High-Side Switching
• Low On-Resistance: 6
• Low Threshold: - 2 V (typ.)
• Fast Swtiching Speed: 20 ns (typ.)
• Low Input Capacitance: 20 pF (typ.)
• 2000 V ESD Protection
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
• Battery Operated Systems
• Power Supply Converter Circuits
• Solid-State Relays
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Easily Driven without Buffer
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71411
S10-1476-Rev. H, 05-Jul-10
a
b
a
a
TA = 25 °C
T
= 100 °C
A
TA = 25 °C
= 100 °C
T
A
V
V
I
R
T
J, Tstg
I
DM
P
thJA
DS
GS
D
- 60
± 20
- 185
- 115
- 800
D
350
140
350 °C/W
- 55 to 150 °C
V
mA
mW
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1
TP0610K
Vishay Siliconix
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Limits
Parameter Symbol Test Conditions
Static
V
Drain-Source Breakdown Voltage V
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
a
a
a
Diode Forward Voltage V
GS(th)
I
D(on)
R
DS(on)
DS
GSS
DSS
g
fs
SD
V
DS
V
DS
V
= - 10 V, ID = - 500 mA, TJ =125 °C 9
GS
Dynamic
Total Gate Charge Q
Gate-Drain Charge Q
Input Capacitance C
Reverse Transfer Capacitance C
Switching
b
Tur n -O n Ti m e t
Turn-Off Time t
gs
gd
iss
oss
rss
d(on)
d(off)
g
I
- 200 mA, V
D
Notes:
a. Pulse test: PW 300 µs duty cycle 2 %.
b. Switching time is essentially independent of operating temperature.
= 0 V, ID = - 10 µA - 60
GS
VDS = VGS, ID = - 250 µA - 1 - 3
V
= 0 V, V
DS
V
= 0 V, V
DS
= 0 V, V
GS
= 0 V, V
V
DS
V
= - 60 V, V
DS
= - 60 V, V
V
= - 10 V, V
GS
V
= - 10 V, V
GS
= ± 20 V ± 10 µA
GS
= ± 10 V ± 200
GS
= ± 10 V, TJ = 85 °C ± 500
= ± 5 V ± 100
GS
= 0 V - 25
GS
= 0 V, TJ = 85 °C - 250
GS
= - 4.5 V - 50
DS
= - 10 V - 600
DS
VGS = - 4.5 V, ID = - 25 mA 10
= - 10 V, ID = - 500 mA 6
GS
VDS = - 10 V, ID = - 100 mA 80 mS
IS = - 200 mA, V
VDS = - 30 V, VGS = - 15 V
I
- 500 mA
D
= 0 V - 1.4 V
GS
0.26
0.46
VDS = - 25 V, VGS = 0 V
f = 1 MHz
VDD = - 25 V, RL = 150
= - 10 V, Rg = 10
GEN
1.7
23
10
20
35
a
Max.
Unit Min. Typ.
V
nA
mA
V
nCGate-Source Charge Q
pFOutput Capacitance C
5
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 71411
S10-1476-Rev. H, 05-Jul-10
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0
4
8
12
16
20
0 200 400 600 800 1000
ID - Drain Current (mA)
VGS = 4.5 V
VGS = 10 V
- On-Resistance (Ω)
R
DS(on)
VGS = 5 V
0
3
6
9
12
15
0.0 0.3 0.6 0.9 1.2 1.5 1.8
ID = 500 mA
- Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
V
GS
VDS = 30 V
VDS = 48 V
0
300
600
900
1200
02468 10
VGS- Gate-to-Source Voltage (V)
- Drain Current (mA)I
D
TJ = - 55 °C
125 °C
25 °C
0
8
16
24
32
40
0 5 10 15 20 25
VDS- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
C
oss
C
iss
VGS= 0 V
1.0
VGS = 10 V
0.8
0.6
0.4
- Drain Current (A)I
D
0.2
0.0
012345
8 V
VDS- Drain-to-Source Voltage (V)
Output Characteristics
7 V
6 V
5 V
4 V
TP0610K
Vishay Siliconix
Transfer Characteristics
On-Resistance vs. Drain Current
Document Number: 71411
S10-1476-Rev. H, 05-Jul-10
Gate Charge
Capacitance
1.8
1.5
VGS = 10 V at 500 mA
1.2
0.9
On-Resistance
-
(Normalized)
0.6
DS(on)
R
0.3
0.0
- 50 - 25 0 25 50 75 100 125 150
TJ- Junction Temperature (°C)
VGS = 4.5 V at 25 mA
On-Resistance vs. Junction Temperature
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3
TP0610K
1.2 1.5
1
100
1000
0.00 0.3 0.6 0.9
TJ = 25 °C
TJ = 125 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
10
TJ = - 55 °C
VGS = 0 V
- 0.3
- 0.2
- 0.1
- 0.0
0.1
0.2
0.3
0.4
0.5
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
Variance (V)
ID = 250 µA
T
J
- Junction Temperature (°C)
0.01
0
1
2.5
3
100 6000.1
Power (W)
Time (s)
1.5
2
0.5
1
10
TA = 25 °C
10
-3
10
-2
00601110
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 350 °C/W
3. T
JM
- TA = PDMZ
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
Source-Drain Diode Forward Voltage
8
ID = 500 mA
6
4
- On-Resistance (Ω)
DS(on)
R
2
ID = 200 mA
0
02468 10
V
- Gate-to-Source Voltage (V)
GS
On-Resistance vs. Gate-Source Voltage
Threshold Voltage Variance Over Temperature
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71411
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4
Single Pulse Power, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Ambient
.
Document Number: 71411
S10-1476-Rev. H, 05-Jul-10
SOT-23 (TO-236): 3-LEAD
b
3
1
Package Information
Vishay Siliconix
E
E
1
2
S
A
A
2
A
1
Dim
A 0.89 1.12 0.035 0.044
A
1
A
2
b 0.35 0.50 0.014 0.020
c 0.085 0.18 0.003 0.007
D 2.80 3.04 0.110 0.120
E 2.10 2.64 0.083 0.104
E
1
e 0.95 BSC 0.0374 Ref
e
1
L 0.40 0.60 0.016 0.024
L
1
S 0.50 Ref 0.020 Ref
q 3°8°3°8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
e
e
1
D
0.10 mm
Seating Plane
C
0.004"
C
C
q
L
L
1
MILLIMETERS INCHES
Min Max Min Max
0.01 0.10 0.0004 0.004
0.88 1.02 0.0346 0.040
1.20 1.40 0.047 0.055
1.90 BSC 0.0748 Ref
0.64 Ref 0.025 Ref
0.25 mm
Gauge Plane
Seating Plane
Document Number: 71196
09-Jul-01
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1
Mounting LITTLE FOOTR SOT-23 Power MOSFETs
Wharton McDaniel
AN807
Vishay Siliconix
Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286), for the basis
of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint . In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.
The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board. The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally. Also, heat spreads
in a circular fashion from the heat source. In this case the drain pin
is the heat source when looking at heat spread on the PC board.
ambient air. This pattern uses all the available area underneath the
body for this purpose.
0.114
2.9
0.081
2.05
0.150
3.8
0.059
1.5
0.0394
FIGURE 1. Footprint With Copper Spreading
1.0
0.037
0.95
Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.
Figure 1 shows the footprint with copper spreading for the SOT-23
package. This pattern shows the starting point for utilizing the
board area available for the heat spreading copper. To create this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the
Document Number: 70739
26-Nov-03
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.
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RECOMMENDED MINIMUM PADS FOR SOT-23
Application Note 826
Vishay Siliconix
0.106
(2.692)
0.037
(0.950)
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.022
(0.559)
0.049
0.029
(1.245)
(0.724)
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Document Number: 72609 www.vishay.com
Revision: 21-Jan-08 25
Return to Index
APPLICATION NOTE
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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