Vishay TP0610K Schematic

P-Channel 60 V (D-S) MOSFET

Marking Code: 6Kwll

6K = Part Number Code for TP0610K

w = Week Code ll = Lot Traceability

TO-236

(SOT-23)

Top View

2

1

S

D

G

3

Ordering Information:

TP0610K-T1-E3 (Lead (Pb)-free) TP0610K-T1-GE3 (Lead (Pb)-free and Halogen-free)

TP0610K

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

- 60 6 at V

()V

DS(on)

= - 10 V - 1 to - 3 - 185

GS

(V) ID (mA)

GS(th)

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET

®

Power MOSFET

• High-Side Switching

• Low On-Resistance: 6 

• Low Threshold: - 2 V (typ.)

• Fast Swtiching Speed: 20 ns (typ.)

• Low Input Capacitance: 20 pF (typ.)

• 2000 V ESD Protection

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.

• Battery Operated Systems

• Power Supply Converter Circuits

• Solid-State Relays

BENEFITS

• Ease in Driving Switches

• Low Offset (Error) Voltage

• Low-Voltage Operation

• High-Speed Circuits

• Easily Driven without Buffer

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

Maximum Junction-to-Ambient

Operating Junction and Storage Temperature Range

Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature.

Document Number: 71411 S10-1476-Rev. H, 05-Jul-10

a

b

a

TA = 25 °C

T

= 100 °C

A

TA = 25 °C

= 100 °C

T

A

V

I

R

T

J, Tstg

I

DM

P

thJA

DS

GS

D

- 60

± 20

- 185

- 115

- 800

D

350

140

350 °C/W

- 55 to 150 °C

V

mA

mW

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TP0610K

Vishay Siliconix

SPECIFICATIONS TA = 25 °C, unless otherwise noted

Limits

Parameter Symbol Test Conditions

Static

V

Drain-Source Breakdown Voltage V

Gate-Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance

a

Diode Forward Voltage V

GS(th)

I

D(on)

R

DS(on)

DS

GSS

DSS

g

fs

SD

V

DS

V

DS

V

= - 10 V, ID = - 500 mA, TJ =125 °C 9

GS

Dynamic

Total Gate Charge Q

Gate-Drain Charge Q

Input Capacitance C

Reverse Transfer Capacitance C

Switching

b

Tur n -O n Ti m e t

Turn-Off Time t

gs

gd

iss

oss

rss

d(on)

d(off)

g

I

 - 200 mA, V

D

Notes: a. Pulse test: PW  300 µs duty cycle  2 %. b. Switching time is essentially independent of operating temperature.

= 0 V, ID = - 10 µA - 60

GS

VDS = VGS, ID = - 250 µA - 1 - 3

V

= 0 V, V

DS

V

= 0 V, V

DS

= 0 V, V

GS

= 0 V, V

V

DS

V

= - 60 V, V

DS

= - 60 V, V

V

= - 10 V, V

GS

V

= - 10 V, V

GS

= ± 20 V ± 10 µA

GS

= ± 10 V ± 200

GS

= ± 10 V, TJ = 85 °C ± 500

= ± 5 V ± 100

GS

= 0 V - 25

GS

= 0 V, TJ = 85 °C - 250

GS

= - 4.5 V - 50

DS

= - 10 V - 600

DS

VGS = - 4.5 V, ID = - 25 mA 10

= - 10 V, ID = - 500 mA 6

GS

VDS = - 10 V, ID = - 100 mA 80 mS

IS = - 200 mA, V

VDS = - 30 V, VGS = - 15 V

I

 - 500 mA

D

= 0 V - 1.4 V

GS

0.26

0.46

VDS = - 25 V, VGS = 0 V

f = 1 MHz

VDD = - 25 V, RL = 150 

= - 10 V, Rg = 10 

GEN

1.7

23

10

20

35

a

Max.

Unit Min. Typ.

V

nA

mA

V

nCGate-Source Charge Q

pFOutput Capacitance C

5

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 71411

S10-1476-Rev. H, 05-Jul-10

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

0

4

8

12

16

20

0 200 400 600 800 1000

ID - Drain Current (mA)

VGS = 4.5 V

VGS = 10 V

- On-Resistance (Ω)

R

DS(on)

VGS = 5 V

0

3

6

9

12

15

0.0 0.3 0.6 0.9 1.2 1.5 1.8

ID = 500 mA

- Gate-to-Source Voltage (V)

Qg- Total Gate Charge (nC)

V

GS

VDS = 30 V

VDS = 48 V

0

300

600

900

1200

02468 10

VGS- Gate-to-Source Voltage (V)

- Drain Current (mA)I

D

TJ = - 55 °C

125 °C

25 °C

0

8

16

24

32

40

0 5 10 15 20 25

VDS- Drain-to-Source Voltage (V)

C - Capacitance (pF)

C

rss

C

oss

C

iss

VGS= 0 V

1.0

VGS = 10 V

0.8

0.6

0.4

- Drain Current (A)I

D

0.2

0.0 012345

8 V

VDS- Drain-to-Source Voltage (V)

Output Characteristics

7 V

6 V

5 V

4 V

TP0610K

Vishay Siliconix

Transfer Characteristics

On-Resistance vs. Drain Current

Document Number: 71411 S10-1476-Rev. H, 05-Jul-10

Gate Charge

Capacitance

1.8

1.5

VGS = 10 V at 500 mA

1.2

0.9

On-Resistance

-

(Normalized)

0.6

DS(on)

R

0.3

0.0

- 50 - 25 0 25 50 75 100 125 150

TJ- Junction Temperature (°C)

VGS = 4.5 V at 25 mA

On-Resistance vs. Junction Temperature

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Vishay TP0610K Schematic [ru]