Vishay TN0201K, TN0201KL Schematic

TN0201K/TN0201KL

V

PRODUCT SUMMARY

(BR)DSS

Min (V)

20

r

DS(on)

Max (W)

1.0 @ VGS = 10 V

1.4 @ VGS = 4.5 V

TO-236

(SOT-23)

1

G

S

2

Top View

TN0201K

Marking Code: K3ywl

K3 = Part Number Code for TN0201K

y = Year Code w = Week Code l = Lot Traceability

Ordering Information: TN0201K-T1—E3 (Lead Free) Ordering Information: TN0201KL-TR1

New Product

N-Channel 20−V (D−S) MOSFET

FEATURES

D TrenchFETr Power MOSFET

APPLICATIONS

D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,

Displays, Memories, Transistors, etc.

D Battery Operated Systems D Solid-State Relays

TO-226AA

(TO-92)

S

G

D

1

2

3

Top View

TN0201KL

V

GS(th)

1.0 to 3.0

3

TN0201K TN0201KL

(V)

0.42 0.64

0.35 0.53

D

ID (A)

Vishay Siliconix

Device Marking

Front View

“S” TN

0201KL

xxyy

“S” = Siliconix Logo xxyy = Date Code

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Limit

Parameter Symbol

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current

Power Dissipation

Thermal Resistance, Junction-to-Ambient R

Operating Junction and Storage Temperature Range TJ, T

Notes a. Pulse width limited by maximum junction temperature.

Document Number: 72671 S-40245—Rev. A, 16-Feb-04

a

_

TA= 25_C

TA= 70_C

TA= 25_C

TA= 70_C

I

DM

P

thJA

DS

GS

D

stg

TN0201K TN0201KL

20

"20

0.42 0.64

0.33 0.51

0.8 1.5

0.35 0.8

0.22 0.51

357 156

−55 to 150

Unit

A

W

_C/W

_C

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1

TN0201K/TN0201KL

Drain-Source On-Resistance

a

r

W

ID ^ 0.3 A

ID ^

V

= 10 V

T

Off Ti

Vishay Siliconix

New Product

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V

Gate-Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

-

Forward Transconductance

Diode Forward Voltage V

Dynamic

b

a

-

a

(BR)DSS

GS(th)

GSS

DSS

I

D(on)

DS(on)

g

fs

SD

VDS = 10 V, VGS = 10 V

VGS = 0 V, ID = 10 mA

VDS = VGS, ID = 0.25 mA 1.0 2.0 3.0

VDS = 0 V, VGS = "20 V "100 nA

VDS = 20 V, VGS = 0 V 1

VDS = 20 V, VGS = 0 V, TJ = 55_C

VGS = 4.5 V, ID = 0.1 A 0.8

VGS = 10 V, ID = 0.3 A 0.47 1.0

VDS = 10 V, ID = 0.3 A 550 mS

IS = 0.3 A, VGS = 0 V 0.85 1.2 V

20

TN0201K 0.5

TN0201KL 0.8

Limits

10

1.4

V

mA

A

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Turn-On Time

-

urn-

me

Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing.

t

d(on)

t

d(off)

g

gs

gd

g

t

r

t

f

VDS = 16 V, VGS = 10 V

^ 0.3 A

I

D

VDD = 15 V, RL = 50 W

0.3 A, RG = 6 W

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics

0.8

0.7

0.6

0.5

0.4

0.3

− Drain Current (A)I

D

0.2

0.1

0.0

0.0 0.4 0.8 1.2 1.6 2.0

VGS = 10 thru 5 V

VDS − Drain-to-Source Voltage (V)

4 V

3 V

2 V

GEN

1000 1500

205

200

48

4.5 8

8 15

9 15

6.3 12

1.0

0.8

0.6

0.4

− Drain Current (A)I

D

0.2

0.0 012345

TJ = 125_C

25_C

VGS − Gate-to-Source Voltage (V)

−55_C

pC

W

ns

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Document Number: 72671

S-40245—Rev. A, 16-Feb-04

TN0201K/TN0201KL

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

On-Resistance vs. Drain Current

VGS = 4.5 V

VGS = 10 V

− Drain Current (A)

I

D

Gate Charge

VDS = 16 V

= 0.3 A

I

D

W )

− On-Resistance (r

DS(on)

1.5

1.2

0.9

0.6

0.3

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

10

8

50

40

30

20

C − Capacitance (pF)

10

0

0 4 8 12 16 20

On-Resistance vs. Junction Temperature

1.6

W)

1.4

Vishay Siliconix

Capacitance

C

iss

C

oss

C

rss

VDS − Drain-to-Source Voltage (V)

VGS = 10 V

= 0.3 A

I

D

− Gate-to-Source Voltage (V)

GS

V

0.1

− Source Current (A)I

S

0.01

6

4

2

0

0.0 0.2 0.4 0.6 0.8 1.0

Qg − Total Gate Charge (nC)

1.2

(Normalized)

− On-Resistance (r

1.0

DS(on)

0.8

0.6

−50 −25 0 25 50 75 100 125 150

T

− Junction Temperature (_C)

J

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

W )

− On-Resistance (r

DS(on)

2.4

2.0

1.6 ID = 0.3 A

1.2

0.8

0.4

3

1

TJ = 150_C

TJ = 25_C

VGS = 4.5 V

= 0.1 A

I

D

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)

Document Number: 72671 S-40245—Rev. A, 16-Feb-04

0.0

0 4 8 12 16 20

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3

Vishay TN0201K, TN0201KL Schematic [ru]