Vishay TN0200K Schematic [ru]
New Product
N-Channel 20-V (D-S) MOSFETs
TN0200K
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) r
20
TO-236
(SOT-23)
G
1
2
S
Top View
Ordering Information:
DS(on)
0.4 at V
GS
0.5 at V
GS
3
D
TN0200K-T1-E3 (Lead (Pb)-free)
(Ω)I
= 4.5 V
= 2.5 V
Marking Code:
K2 = Part Number Code for TN0200K
y = Year Code
w = Week Code
l = Lot Traceability
(A)
D
0.73
0.65
K2ywl
FEATURES
• TrenchFET® Power MOSFET
• ESD Protected: 4000 V
APPLICATIONS
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers
• Battery Operated Systems, DC/DC Converters
• Solid-State Relays
• Load/Power Switching-Cell Phones, Pagers
D
100 Ω
G
S
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
T
V
DS
V
GS
I
D
I
DM
I
S
P
D
J, Tstg
20
± 8
0.73
0.58
4
0.3
0.35
0.22
W
- 55 to 150 °C
V
A
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
= 150 °C)
J
a
Continuous Source Current (Diode Conduction)
Power Dissipation
b
b
b
Operating Junction and Storage Temperature Range
TA = 25 °C
= 70 °C
T
A
TA = 25 °C
= 70 °C
T
A
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient
b
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
Document Number: 72678
S-71198–Rev. B, 18-Jun-07
R
thJA
357 °C/W
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1
New Product
TN0200K
Vishay Siliconix
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Limits
Parameter Symbol Test Conditions
Static
V
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
a
a
a
a
Total Gate Charge
Gate-Drain Charge
Gate Resistance
Tur n -O n De l ay Ti m e
Rise Time
Turn-Off Delay Time
Fall TIm e
V
(BR)DSS
V
GS(th)
I
V
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
= 0 V, ID = 10 µA
GS
VDS = VGS, ID = 50 µA
V
V
V
DS
DS
DS
DS
= 0 V, V
= 20 V, V
≥ 5 V, V
≥ 5 V, V
= ± 4.5 V
GS
GS
= 4.5 V
GS
= 2.5 V
GS
= 0 V
T
J
VGS = 4.5 V, ID = 0.6 A
V
= 2.5 V, ID = 0.6 A
GS
VDS = 5 V, ID = 0.6 A
IS = 0.3 A, V
GS
= 0 V
VDS = 10 V, VGS = 4.5 V
= 0.6 A
I
D
VDD = 10 V, RL = 16 Ω
≅ 0.6 A, V
I
D
R
= 6 Ω
g
GEN
= 4.5 V
= 55 °C
20
0.45 0.6 1.0
± 5
0.1
10
2.5
1.5
0.2 0.4
0.25 0.5
2.2 S
0.8 1.2 V
1400 2000
190
300
105 Ω
17 25
20 30
55 85
30 45
Notes:
a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Unit Min Typ Max
V
µA
A
Ω
pCGate-Source Charge
ns
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4.0
3.2
2.4
1.6
– Drain Current (A)I
D
0.8
0.0
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2
0.0 0.4 0.8 1.2 1.6 2.0
– Drain-to-Source Voltage (V)
V
DS
Output Characteristics
VGS = 5 thru 2.5 V
2 V
1.5 V
1 V
4
TJ = - 55 °C
3
25 °C
2
– Drain Current (A)I
D
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
– Gate-to-Source Voltage (V)
V
GS
Transfer Characteristics
Document Number: 72678
S-71198–Rev. B, 18-Jun-07
125 °C
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