New Product
N-Channel 20-V (D-S) MOSFETs
TN0200K
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) r
20
TO-236
(SOT-23)
G
1
2
S
Top View
Ordering Information:
DS(on)
0.4 at V
GS
0.5 at V
GS
3
D
TN0200K-T1-E3 (Lead (Pb)-free)
(Ω)I
= 4.5 V
= 2.5 V
Marking Code:
K2 = Part Number Code for TN0200K
y = Year Code
w = Week Code
l = Lot Traceability
(A)
D
0.73
0.65
K2ywl
FEATURES
• TrenchFET® Power MOSFET
• ESD Protected: 4000 V
APPLICATIONS
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers
• Battery Operated Systems, DC/DC Converters
• Solid-State Relays
• Load/Power Switching-Cell Phones, Pagers
D
100 Ω
G
S
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
T
V
DS
V
GS
I
D
I
DM
I
S
P
D
J, Tstg
20
± 8
0.73
0.58
4
0.3
0.35
0.22
W
- 55 to 150 °C
V
A
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
= 150 °C)
J
a
Continuous Source Current (Diode Conduction)
Power Dissipation
b
b
b
Operating Junction and Storage Temperature Range
TA = 25 °C
= 70 °C
T
A
TA = 25 °C
= 70 °C
T
A
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient
b
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
Document Number: 72678
S-71198–Rev. B, 18-Jun-07
R
thJA
357 °C/W
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1
New Product
TN0200K
Vishay Siliconix
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Limits
Parameter Symbol Test Conditions
Static
V
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
a
a
a
a
Total Gate Charge
Gate-Drain Charge
Gate Resistance
Tur n -O n De l ay Ti m e
Rise Time
Turn-Off Delay Time
Fall TIm e
V
(BR)DSS
V
GS(th)
I
V
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
= 0 V, ID = 10 µA
GS
VDS = VGS, ID = 50 µA
V
V
V
DS
DS
DS
DS
= 0 V, V
= 20 V, V
≥ 5 V, V
≥ 5 V, V
= ± 4.5 V
GS
GS
= 4.5 V
GS
= 2.5 V
GS
= 0 V
T
J
VGS = 4.5 V, ID = 0.6 A
V
= 2.5 V, ID = 0.6 A
GS
VDS = 5 V, ID = 0.6 A
IS = 0.3 A, V
GS
= 0 V
VDS = 10 V, VGS = 4.5 V
= 0.6 A
I
D
VDD = 10 V, RL = 16 Ω
≅ 0.6 A, V
I
D
R
= 6 Ω
g
GEN
= 4.5 V
= 55 °C
20
0.45 0.6 1.0
± 5
0.1
10
2.5
1.5
0.2 0.4
0.25 0.5
2.2 S
0.8 1.2 V
1400 2000
190
300
105 Ω
17 25
20 30
55 85
30 45
Notes:
a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Unit Min Typ Max
V
µA
A
Ω
pCGate-Source Charge
ns
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4.0
3.2
2.4
1.6
– Drain Current (A)I
D
0.8
0.0
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2
0.0 0.4 0.8 1.2 1.6 2.0
– Drain-to-Source Voltage (V)
V
DS
Output Characteristics
VGS = 5 thru 2.5 V
2 V
1.5 V
1 V
4
TJ = - 55 °C
3
25 °C
2
– Drain Current (A)I
D
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
– Gate-to-Source Voltage (V)
V
GS
Transfer Characteristics
Document Number: 72678
S-71198–Rev. B, 18-Jun-07
125 °C
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
TN0200K
Vishay Siliconix
– On-Resistance (Ω)r
DS(on)
1.0
0.8
0.6
0.4
0.2
0.0
VGS = 2.5 V
VGS = 4.5 V
01234567
ID – Drain Current (A)
On-Resistance vs. Drain Current
5
VDS = 10 V
= 0.6 A
I
D
4
3
200
175
150
125
100
75
C – Capacitance (pF)
50
25
0
1.7
1.5
1.3
C
0 4 8 12 16 20
C
iss
C
oss
rss
VDS – Drain-to-Source Voltage (V)
Capacitance
VGS = 4.5 V
= 0.6 A
I
D
– Gate-to-Source Voltage (V)
GS
V
– Source Current (A)I
S
0.01
0.001
2
1
0
0.0 0.3 0.6 0.9 1.2 1.5
Qg – Total Gate Charge (nC)
Gate Charge
5
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
TJ = 150 °C
TJ = 25 °C
– Source-to-Drain Voltage (V)
V
SD
Source-Drain Diode Forward Voltage
– On-Resiistance
(Normalized)
1.1
DS(on)
r
0.9
0.7
- 50 - 25 0 25 50 75 100 125 150
0.8
0.7
0.6
0.5
0.4
– On-Resistance (Ω)r
0.3
0.2
DS(on)
0.1
0.0
012345
– Junction Temperature (°C)
T
J
On-Resistance vs. Junction Temperature
ID = 0.6 A
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage
Document Number: 72678
S-71198–Rev. B, 18-Jun-07
www.vishay.com
3
New Product
TN0200K
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.2
0.1
ID = 50 µA
- 0.0
- 0.1
Variance (V)V
GS(th)
- 0.2
- 0.3
- 0.4
- 50 - 25 0 25 50 75 100 125 150
TJ – Temperature ( C)°
Threshold Voltage
5
4
3
Power (W)
2
1
A)
– Gate Current (µI
GSS
100000
10000
1000
100
10
0.1
0.01
0.001
TJ = 150 °C
1
TJ = 25 °C
0 26810
V
4
– Gate-to-Source Voltage (V)
GS
Gate Current vs. Gate-Source Voltage
10
*r
Limited
DS(on)
1
I
0.1
– Drain Current (A)I
D
0.01
D(on)
Limited
TA = 25 °C
Single Pulse
I
DM
Limited
1 ms
10 ms
100 ms
1 s
10 s
dc
BV
Limited
DSS
DS(on)
is specified
0
1 600100.10.01
Time (sec)
Single Pulse Power, Junction-to-Ambient
100
0.001
0.1 1 10 100
VDS – Drain-to-Source Voltage (V)
*V
minimum VGS at which r
GS
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Thermal Impedance
Normalized Effective Transient
0.05
0.02
Single Pulse
0.01
-4
10
-3
10
-2
10
-1
1 10 60010
100
Square Wave Pulse Duration (sec)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72678.
www.vishay.com
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Document Number: 72678
S-71198–Rev. B, 18-Jun-07
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
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