VISHAY TLWW8600 Technical data

VISHAY

19232

e3

Pb

Pb-free

TELUX™ LED

Description

The TELUX™ series is a clear, non diffused LED for
high end applications where supreme luminous flux is
required.

It is designed in an industry standard 7.62 mm square
package utilizing highly developed InGaN technology.

The supreme heat dissipation of TELUX™ allows
applications at high ambient temperatures.

All packing units are binned for luminous flux and
color to achieve best homogenous light appearance
in application.

TLWW8600

Vishay Semiconductors

Features

• Lead-free device

• Utilizing InGaN technology

• High luminous flux

• Supreme heat dissipation: R

• High operating temperature: T

is 90 K/W

thJP

+ 100 °C

j

• Packed in tubes for automatic insertion

• Luminous flux and color categorized for each tube

Applications

Exterior lighting
Dashboard illumination
Tail-, Stop - and Turn Signals of motor vehicles
Replaces incandescent lamps

• Small mechanical tolerances allow precise usage
of external reflectors or lightguides

• ESD-withstand voltage:
> 1 kV acc. to MIL STD 883 D, Method 3015.7

Parts Table

Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology

TLWW8600 White, φ

> 630 mlm 30 ° InGaN / TAG on SiC

V

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

TLWW8600

Parameter Test condition Symbol Value Unit

Reverse voltage I

DC Forward current T

Surge forward current t

Power dissipation T

Junction temperature T

Operating temperature range T

Storage temperature range T

= 10 µAV

R

≤ 50 °C I

amb

≤ 10 µsI

p

≤ 50 °C P

amb

F

FSM

amb

stg

R

V

j

5V

50 mA

0.1 A

255 mW

100 °C

- 40 to + 100 °C

- 55 to + 100 °C

Document Number 83169

Rev. 1.5, 31-Aug-04

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TLWW8600

VISHAY

Vishay Semiconductors

Parameter Test condition Symbol Val ue Unit

Soldering temperature t ≤ 5 s, 1.5 mm from body

T

sd

260 °C
preheat temperature
100 °C/ 30 sec.

Thermal resistance junction/
ambient

with cathode heatsink

of 70 mm

2

Thermal resistance junction/pin R

R

thJA

thJP

200 K/W

90 K/W

Optical and Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

White

TLWW8600

Parameter Test condition Symbol Min Ty p. Max Unit

Total flux I

Luminous intensity/Total flux I

Color temperature I

Angle of half intensity I

= 50 mA,

F

R

= 200 °K/W

thJA

= 50 mA,

F

= 200 °K/W

R

thJA

= 50 mA,

F

= 200 °K/W

R

thJA

= 50 mA,

F

= 200 °K/W

R

thJA

φ

V

I

V/φV

T

K

ϕ ± 30 deg

Total included angle 90 % of Total Flux Captured ϕ 75 deg

Forward voltage I

Reverse voltage I

Junction capacitance V

= 50 mA,

F

R

= 200 °K/W

thJA

= 10 µAV

R

= 0, f = 1 MHz C

R

V

F

R

j

630 1000 mlm

0.8 mcd/mlm

5500 K

4.3 5.2 V

510 V

50 pF

Chromaticity Coordinate Classification

Group X Y

min max min max

3a 0.29 0.3025 Y = 1.4x - 0.121 Y = 1.4x - 0.071

3b 0.3025 0.315 Y = 1.4x - 0.121 Y = 1.4x - 0.071

3c 0.29 0.3025 Y = 1.4x - 0.171 Y = 1.4x - 0.121

3d 0.3025 0.315 Y = 1.4x - 0.171 Y = 1.4x - 0.121

4a 0.315 0.3275 Y = 1.4x - 0.121 Y = 1.4x - 0.071

4b 0.3275 0.34 Y = 1.4x - 0.121 Y = 1.4x - 0.071

4c 0.315 0.3275 Y = 1.4x - 0.171 Y = 1.4x - 0.121

4d 0.3275 0.34 Y = 1.4x - 0.171 Y = 1.4x - 0.121

5a 0.34 0.3525 Y = 1.4x - 0.121 Y = 1.4x - 0.071

5b 0.3525 0.365 Y = 1.4x - 0.121 Y = 1.4x - 0.071

5c 0.34 0.3525 Y = 1.4x - 0.171 Y = 1.4x - 0.121

5d 0.3525 0.365 Y = 1.4x - 0.171 Y = 1.4x - 0.121

tolerance ± 0.005

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Document Number 83169

Rev. 1.5, 31-Aug-04

VISHAY

TLWW8600

Vishay Semiconductors

Typical Characteristics (T

250

225

200

175

150

125

100

75

R

= 200 K/W

thJA

50

V

P - Power Dissipation ( mW )

25

0

08020 40 60 100 120

T

16066

- Ambient Temperature ( ° C)

amb

= 25 °C unless otherwise specified)

amb

Figure 1. Power Dissipation vs. Ambient Temperature for InGaN

60

50

40

30

20

F

10

I - Forward Current ( mA )

0

16067

= 200 K/W

R

thJA

08020 40 60 100 120

T

- Ambient Temperature ( ° C)

amb

100

90

80

70

60

50

40

30

20

% Total Luminous FluxR in K/W

10

0

0 2 5 50 75 100 125

16005

Total Included Angle (Degrees)

Figure 4. Percentage Total Luminous Flux vs. Total Included Angle

for 60 ° emission angle

230

220

210

200

190

thJA

180

170

160

0 50 100 150 200 250 300

16009

Cathode Padsize in mm

Padsize 8 mm
per Anode Pin

2

2

Figure 2. Forward Current vs. Ambient Temperature for InGaN

0°

v rel

I – Relative Luminous Intensity

16006

1.0

0.9

0.8

0.7

0.4 0.2 0 0.2 0.4

0.6

10° 20°

30°

40°

50°

60°

70°

80°

0.6

Figure 3. Rel. Luminous Intensity vs. Angular Displacement

for 60 ° emission angle

Document Number 83169

Rev. 1.5, 31-Aug-04

Figure 5. Thermal Resistance Junction Ambient vs. Cathode

Padsize

100

90

White

80

70

60

50

40

30

20

F

I - Forward Current ( mA )

10

0

2.5 3.0 3.5 4.0 4.5 5.0 5.5

16062

VF- Forward Voltage ( V )

Figure 6. Forward Current vs. Forward Voltage

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TLWW8600

Vishay Semiconductors

VISHAY

1.8

1.6

White

IF=50mA

1.4

1.2

1.0

0.8

0.6

- Relative Luminous Flux

0.4

V rel

Φ

0.2

0.0

-40 -20 0 20 4 0 60 80 100

16065

T

- Ambient Temperature ( ° C)

amb

Figure 7. Rel. Luminous Flux vs. Ambient Temperature

White

1.0

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

V rel

I - Relative Luminous Intensity

0.1

0.0
400 450 500 550 600 650 700 750 800

16071

ı

λ

- Wavelength ( nm )

Figure 10. Relative Intensity vs. Wavelength

0.345

0.340

X

0.335

0.330

0.325

White

Y

IF=50mAWhite

Spec

I - Specific Luminous Flux

0.1
1 1 0 100

16063

IF- Forward Current ( mA )

Figure 8. Specific Luminous Flux vs. Forward Current

10.00

White

1.00

0.10

V rel

I - Relative Luminous Flux

0.01
1 10 100

I

16064

- Forward Current ( mA )

F

Figure 9. Relative Luminous Flux vs. Forward Current

0.320

f - Chromaticity coordinate shift (x,y)

0.315
0605040302010

16198

I

- Forward Current ( mA )

F

Figure 11. Chromaticity Coordinate Shift vs. Forward Current

0.44

0.42

0.40

0.38

0.36

0.34

0.32

0.30

0.28

Y and Y’ Coordinates

0.26

4b

4a

3b

3a

3d

3c

4d

4c

5b

5a

5d

5c

0.24

0.22

0.28 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.36 0.37

19037

X Coordinates

Figure 12. Coordinates of Colorgroups

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Document Number 83169

Rev. 1.5, 31-Aug-04

VISHAY

Package Dimensions in mm

TLWW8600

Vishay Semiconductors

Document Number 83169

Rev. 1.5, 31-Aug-04

16004

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TLWW8600

VISHAY

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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Document Number 83169

Rev. 1.5, 31-Aug-04