Universal LED, ∅ 1.8 mm Tinted Diffused Miniplast Package
Features
• Three colors
• For DC and pulse operation
• Luminous intensity categorized
• End-to-end stackable in centre-to-centre
spacing of 0.1" (2.54 mm)
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
General indicating and lighting purposes
e4
19229
Parts Table
PartColor, Luminous IntensityAngle of Half Intensity (±ϕ)Technology
TLUO2400Red, I
TLUO2401Red, I
TLUY2400Yellow, I
TLUY2401Yellow, I
TLUG2400Green, I
TLUG2401Green, I
> 1.6 mcd20 °GaAsP on GaP
V
= (4 to 20) mcd20 °GaAsP on GaP
V
> 1 mcd20 °GaAsP on GaP
V
= (2.5 to 12.5) mcd20 °GaAsP on GaP
V
> 1.6 mcd20 °GaP on GaP
V
= (4 to 20) mcd20 °GaP on GaP
V
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
TLUO240. , TLUY240. , TLUG240.
ParameterTest conditionPar tSymbolVal ueUnit
Reverse voltageV
DC Forward currentTLUO2400I
TLUY2400I
TLUG2400I
Surge forward currentt
Power dissipationT
Junction temperatureT
Operating temperature rangeT
Storage temperature rangeT
Soldering temperaturet ≤ 3 s, 2 mm from bodyT
≤ 10 µsI
p
≤ 55 °CTLUO2400P
amb
TLUY2400P
TLUG2400P
t ≤ 5 s, 4 mm from bodyT
F
F
F
FSM
amb
stg
sd
sd
R
V
V
V
j
6V
30mA
30mA
30mA
1A
100mW
100mW
100mW
100°C
- 40 to + 100°C
- 55 to + 100°C
260°C
260°C
Document Number 83053
Rev. 1.9, 18-May-05
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TLUG / O / Y240.
Vishay Semiconductors
ParameterTest conditionPartSymbolValu eUnit
Thermal resistance junction/
ambient
Optical and Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Red
TLUO240.
ParameterTest conditionPartSymbolMinTy p.MaxUnit
Luminous intensity
1)
Dominant wavelengthI
Peak wavelengthI
Angle of half intensityI
Forward voltageI
Reverse voltageI
Junction capacitanceV
1)
in one Packing Unit I
Vmin/IVmax
IF = 10 mATLUO2400I
= 10 mAλ
F
= 10 mAλ
F
= 10 mAϕ± 20deg
F
= 20 mAV
F
= 10 µAV
R
= 0, f = 1 MHzC
R
≤ 0.5
TLUO2400R
TLUY2400R
TLUG2400R
V
TLUO2401I
V
thJA
thJA
thJA
450K/W
450K/W
450K/W
1.62mcd
4520mcd
d
p
F
R
612625nm
630nm
23V
615V
j
50pF
Yellow
TLUY240.
ParameterTest conditionPartSymbolMinTy p.MaxUnit
Luminous intensity
Dominant wavelengthI
Peak wavelengthI
Angle of half intensityI
Forward voltageI
Reverse voltageI
Junction capacitanceV
1)
in one Packing Unit I
1)
Vmin/IVmax
IF = 10 mATLUY2400I
TLUY2401I
= 10 mAλ
F
= 10 mAλ
F
= 10 mAϕ± 20deg
F
= 20 mAV
F
= 10 µAV
R
= 0, f = 1 MHzC
R
V
V
d
p
F
R
j
14mcd
2.5812.5mcd
581594nm
585nm
2.43V
615V
50pF
≤ 0.5
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2
Document Number 83053
Rev. 1.9, 18-May-05
TLUG / O / Y240.
Vishay Semiconductors
Green
TLUG240.
ParameterTest conditionPartSymbolMinTy p.MaxUnit
Luminous intensity
1)
Dominant wavelengthI
Peak wavelengthI
Angle of half intensityI
Forward voltageI
Reverse voltageI
Junction capacitanceV
1)
in one Packing Unit I
Vmin/IVmax
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
100
IF = 10 mATLUG2400I
TLUG2401I
= 10 mAλ
F
= 10 mAλ
F
= 10 mAϕ± 20deg
F
= 20 mAV
F
= 10 µAV
R
= 0, f = 1 MHzC
R
V
V
d
p
F
R
1.65mcd
41220mcd
562575nm
615V
j
≤ 0.5
10000
565nm
2.43V
50pF
Red,
80
Yellow, Green
60
40
20
V
P - Power Dissipation ( mW )
0
0 20406080100
18840
T
- Ambient Temperature ( °C)
amb
Figure 1. Power Dissipation vs. Ambient Temperature
40
35
Red, Yellow, Green
30
25
20
15
10
F
I - Forward Current ( mA )
5
0
0 1020304050607080 90100
18841
T
- Ambient Temperature ( ° C)
amb
Figure 2. Forward Current vs. Ambient Temperature
1000
tp/T= 0.01
0.02
0.05
0.1
100
0.2
0.5
1
10
F
I - Forward Current ( mA )
95 10093
Green, Yellow
Orange Red
1
T
amb
0.010.1110
t
- Pulse Length ( ms )
p
≤
55 ° C
100
Figure 3. Forward Current vs. Pulse Length
1020
°
0°°
30°
40°
1.0
v rel
I- Relative Luminous Intensity
95 10094
0.9
0.8
0.7
0.40.200.20.4
0.6
50°
60°
70°
80°
0.6
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
Document Number 83053
Rev. 1.9, 18-May-05
www.vishay.com
3
TLUG / O / Y240.
Vishay Semiconductors
100
2.4
Red
2.0
10
1
F
I - Forward Current ( mA )
0.1
012345
16634
VF- Forward Voltage(V)
Figure 5. Forward Current vs. Forward Voltage
1000
Red
100
10
1
F
I - Forward Current ( mA )
tp/T = 0.001
=10µs
t
p
95 10086
0.1
VF- Forward Voltage(V)
1.6
1.2
0.8
0.4
v rel
I- Relative Luminous Intensity
I
= 10 mA, const.
FAV
0
(mA)
102050100 200
95 10088
0.50.20.1 0.050.021
500
I
F
t
/T
p
Figure 8. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
10
Red
1
0.1
v rel
I- Relative Luminous Intensity
1086420
0.01
95 10089
IF- Forward Current ( mA )
101
100
Figure 6. Forward Current vs. Forward Voltage
1.6
Red
1.2
0.8
0.4
IF=10mA
v rel
I- Relative Luminous Intensity
0
204060800100
T
95 10087
- Ambient Temperature ( ° C)
amb
Figure 7. Rel. Luminous Intensity vs. Ambient Temperature
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4
Figure 9. Relative Luminous Intensity vs. Forward Current
1.2
Red
1.0
0.8
0.6
0.4
0.2
v rel
I- Relative Luminous Intensity
0
590610630650670
95 10090
λ - Wavelength ( nm )
690
Figure 10. Relative Intensity vs. Wavelength
Document Number 83053
Rev. 1.9, 18-May-05
TLUG / O / Y240.
Vishay Semiconductors
1000
Yellow
100
tp/T = 0.001
=10µs
t
10
1
F
I - Forward Current ( mA )
p
0.1
95 10030
VF- Forward Voltage(V)
Figure 11. Forward Current vs. Forward Voltage
1.6
Yellow
1.2
0.8
0.4
v rel
I- Relative Luminous Intensity
IF=10mA
0
0
20406080
T
95 10031
- Ambient Temperature ( °C)
amb
1086420
100
10
Yellow
1
0.1
v rel
I- Relative Luminous Intensity
95 10033
0.01
I
101
- Forward Current ( mA )
F
100
Figure 14. Relative Luminous Intensity vs. Forward Current
1.2
Yellow
1.0
0.8
0.6
0.4
0.2
Vrel
I- Relative Luminous Intensity
0
550570590610630
95 10039
λ -- Wavelength ( nm )
650
Figure 12. Rel. Luminous Intensity vs. Ambient Temperature
2.4
Yellow
2.0
1.6
1.2
0.8
0.4
v rel
I- Relative Luminous Intensity
0
I
102050100 200
95 10260
0.50.20.1 0.050.021
500
F
t
(mA)
/T
p
Figure 13. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Document Number 83053
Rev. 1.9, 18-May-05
Figure 15. Relative Intensity vs. Wavelength
1000
Green
100
tp/T = 0.001
=10µs
t
10
1
F
I - Forward Current ( mA )
p
0.1
95 10034
VF- Forward Voltage(V)
Figure 16. Forward Current vs. Forward Voltage
1086420
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TLUG / O / Y240.
Vishay Semiconductors
1.6
Green
1.2
0.8
0.4
IF=10mA
v rel
I- Relative Luminous Intensity
0
204060800100
T
95 10035
- Ambient Temperature ( ° C)
amb
Figure 17. Rel. Luminous Intensity vs. Ambient Temperature
2.4
Green
2.0
1.6
1.2
0.8
1.2
Green
1.0
0.8
0.6
0.4
0.2
Vrel
I- Relative Luminous Intensity
0
520540560580600
95 10038
λ -- Wavelength ( nm )
Figure 20. Relative Intensity vs. Wavelength
620
0.4
v rel
I- Specific Luminous Intensity
95 10263
0
102050100 200
0.50.2 0.10.050.021
500
IF(mA)
/T
t
p
Figure 18. Specific Luminous Intensity vs. Forward Current
10
Green
1
0.1
v rel
I- Relative Luminous Intensity
95 10037
101
IF- Forward Current ( mA )
100
Figure 19. Relative Luminous Intensity vs. Forward Current
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Document Number 83053
Rev. 1.9, 18-May-05
Package Dimensions in mm
TLUG / O / Y240.
Vishay Semiconductors
95 11262
Document Number 83053
Rev. 1.9, 18-May-05
www.vishay.com
7
TLUG / O / Y240.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
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