VISHAY TLMW310 Technical data

VISHAY

e3

Pb

Pb-free

19225

High Intensity SMD LED

Description

This device has been designed to meet the increasing
demand for white SMD LED.

The package of the TLMW310. is the PLCC-2 (equiv­alent to a size B tantalum capacitor).

It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled with a mixture of epoxy and TAG phosphor.

The TAG phosphor converts the blue emission par­tially to yellow, which mixes with the remaining blue to
give white.

TLMW310.

Vishay Semiconductors

Features

• High efficient InGaN technology

• Chromaticity Coordinate categorized according to
CIE1931 per packing unit

• Luminous intensity ratio in one packing unit
I

Vmax/IVmin

≤ 1.6

• Typical color temperature 5500 K

• ESD class 1

• EIA and ICE standard package

• Compatible with infrared, vapor phase and wave
solder processes according to CECC

• Available in 8 mm tape reel

• Lead-free device

Parts Table

Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology

TLMW3100 White, I

TLMW3101 White, I

TLMW3102 White, I

> 80 mcd 60 ° InGaN / TAG on SiC

V

= (80 to 200) mcd 60 ° InGaN / TAG on SiC

V

= (125 to 320) mcd 60 ° InGaN / TAG on SiC

V

Applications

Automotive: Backlighting in dashboards and switches
Telecommunication: Indicator and backlighting in

telephone and fax
Backlighting for audio and video equipment
Backlighting in office equipment
Indoor and outdoor message boards
Flat backlight for LCDs, switches and symbols
Illumination purposes, alternative to incandescent

lamps
General use

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

TLMW310.

Parameter Test condition Symbol Value Unit

Reverse voltage V

DC Forward current T

Surge forward current t

Power dissipation T

Junction temperature T

Operating temperature range T

Document Number 83143

Rev. 1.7, 31-Aug-04

≤ 70 °C I

amb

≤ 10 µsI

p

≤ 70 °C P

amb

F

FSM

amb

R

V

j

5V

20 mA

0.1 A

85 mW

100 °C

- 40 to + 100 °C

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1

TLMW310.

Vishay Semiconductors

Parameter Test condition Symbol Val ue Unit

Storage temperature range T

Soldering temperature t ≤ 5 s T

Thermal resistance junction/
ambient

Optical and Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

White

TLMW310.

Parameter Test condition Part Symbol Min Ty p. Max Unit

Luminous intensity

Chromaticity coordinate x acc.
to CIE 1931

Chromaticity coordinate y acc.
to CIE 1931

Angle of half intensity I

Forward voltage I

Reverse voltage I

Temperature coefficient of V

Temperature coefficient of I

1)

in one Packing Unit I

1)

Vmax/IVmin

mounted on PC board

(pad size > 16 mm

2

)

IF = 20 mA TLMW3100 I

TLMW3101 I

TLMW3102 I

= 20 mA TLMW3100 x 0.33

I

F

I

= 20 mA TLMW3100 y 0.33

F

= 20 mA ϕ ± 60 deg

F

= 20 mA V

F

= 10 µAV

R

= 20 mA TC

FIF

IF = 20 mA TC

V

≤ 1.6

VISHAY

stg

sd

R

thJA

- 40 to + 100 °C

260 °C

350 K/W

V

V

V

F

R

VF

IV

80 140 mcd

80 200 mcd

125 320 mcd

3.5 4.2 V

5V

- 4 mV/K

- 0.5 % / K

Typical Characteristics (T

90

80

70

60

50

40

30

20

V

P - Power Dissipation ( mW )

10

0

0 1020 304050607080 90100

T

16191

- Ambient Temperature ( °C)

amb

= 25 °C unless otherwise specified)

amb

Figure 1. Power Dissipation vs. Ambient Temperature

25

20

15

10

5

F

I - Forward Current ( mA )

0

0 1020 30405060708090100

16192

T

- Ambient Temperature ( °C)

amb

Figure 2. Forward Current vs. Ambient Temperature for AlInGaP

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2

Document Number 83143

Rev. 1.7, 31-Aug-04

VISHAY

TLMW310.

Vishay Semiconductors

30

MTTF, confidence level 60%
failure criteria I

25

V/IV0

= 50%

ı

I

5000h

ı

II

10000h

20

15

II

I

10

5

F

I - Forward Current ( mA )

0

0 102030405060708090100

T

16193

- Ambient Temperature ( °C)

amb

Figure 3. Forward Current vs. Ambient Temperature for AlInGaP

10

1

0.1

Vrel

I - Relative Luminous Intensity

0.01
1 10 100

16194

IF- Forward Current ( mA )

100

90

80

70

60

50

40

30

20

V rel

10

I - Relative Luminous Intensity

0

400 450 500 550 600 650 700 750 800

16196

λ

- Wavelength ( nm )

Figure 6. Relative Intensity vs. Wavelength

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

Vrel

0.2

I - Relative Luminous Intensity

0.0
0 1020 30405060708090100

T

16197

- Ambient Temperature ( °C)

amb

Figure 4. Relative Luminous Intensity vs. Forward Current

100

10

F

I - Forward Current ( mA)

1

2.0 2.5 3.0 3.5 4.0 4.5 5.0

16195

VF- Forward Voltage(V)

Figure 5. Forward Current vs. Forward Voltage

Document Number 83143

Rev. 1.7, 31-Aug-04

Figure 7. Rel. Luminous Intensity vs. Ambient Temperature

0.345

White

0.340

X

0.335

0.330

0.325

Y

0.320

f - Chromaticity coordinate shift (x,y)

0.315
0605040302010

16198

I

- Forward Current ( mA )

F

Figure 8. Chromaticity Coordinate Shift vs. Forward Current

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3

TLMW310.

Vishay Semiconductors

3.95

3.90

3.85

3.80

3.75

3.70

3.65

3.60

F

3.55

I - Forward Voltage(V)

3.50

3.45
0 1020 30405060708090100

16199

T

- Ambient Temperature ( °C)

amb

Figure 9. Forward Voltage vs. Ambient Temperature

0°

10° 20°

VISHAY

30°

40°

50°

60°

70°

80°

0.6

Vre l

I - Relative Luminous Intensity

95 10319

1.0

0.9

0.8

0.7

0.4 0.2 0 0.2 0.4

0.6

Figure 10. Rel. Luminous Intensity vs. Angular Displacement

0.50

f

0.45

0.40

0.35

0.30

0.25

Coordinates of Colorgroups

0.20

0.20 0.25 0.30 0.35 0.40 0.45 0.50

16284

c

b

a

Coordinates of Colorgroups

e

d

5

AD65

.

.

3

4

a = 20000K
b = 10000K
c = 7000K
d = 6000K
e = 5000K
f = 4000K

Figure 11. Coordinates of Colorgroups

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Document Number 83143

Rev. 1.7, 31-Aug-04

VISHAY

Package Dimensions in mm

3.5 ± 0.2

+ 0.10

- 0.05

1.65

Pin identification

0.85

technical drawings
according to DIN
specifications

Mounting Pad Layout

1.2

TLMW310.

Vishay Semiconductors

area covered with
solder resist

95 11314

CA

+ 0.15

2.8

2.2

2.6 (2.8)

1.6 (1.9)

∅ 2.4

+ 0.15

3

Dimensions: IR and Vaporphase

Drawing-No. : 6.541-5025.01-4
Issue: 7; 05.04.04

4

4

(Wave Soldering)

Document Number 83143

Rev. 1.7, 31-Aug-04

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5

TLMW310.

VISHAY

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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6

Document Number 83143

Rev. 1.7, 31-Aug-04

Legal Disclaimer Notice

Vishay

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
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