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Vishay Telefunken
SMD LED in P–LCC–2 Package
Color Type Technology Angle of Half Intensity
High efficiency red TLMH3101 GaAsP on GaP 60
Description
These devices have been designed for applications
requiring narrow brightnes selection.
The package of the TLMH3101 is the P–LCC–2
(equivalent to a size B tantalum capacitor).
It consists of a lead frame which is surrounded with
a white thermoplast. The reflector inside this package
is filled up with clear epoxy.
TLMH3101
±
ö
°
Features
D
SMD LED with exceptional brightness
D
Luminous intensity categorized
D
Color categorized
D
Compatible with automatic placement
equipment
D
EIA and ICE standard package
D
Compatible with infrared, vapor phase and
wave solder processes according to CECC
D
Available in 8 mm tape
D
Low profile package
D
Non-diffused lens: excellent for coupling to light
pipes and backlighting
D
Low power consumption
D
Luminous intensity ratio in one packaging unit
I
Vmax/IVmin
x 2.0
Applications
Automotive: backlighting in dashboards and switches
Telecommunication: indicator and backlighting in telephone and fax
Indicator and backlight for audio and video equipment
Indicator and backlight in office equipment
Flat backlight for LCDs, switches and symbols
General use
94 8553
Rev. A1, 04-Feb-99
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TLMH3101
Vishay Telefunken
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
TLMH3101
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
DC forward current T
Surge forward current tp ≤ 10 ms I
Power dissipation T
Junction temperature T
Operating temperature range T
Storage temperature range T
Soldering temperature t ≤ 5 s T
Thermal resistance junction/ambient mounted on PC board
Optical and Electrical Characteristics
T
= 25_C, unless otherwise specified
amb
High efficiency red (TLMH3101 )
≤ 60°C I
amb
≤ 60°C P
amb
(pad size > 16 mm
2
)
R
R
F
FSM
V
amb
stg
sd
thJA
6 V
30 mA
0.5 A
100 mW
j
100
–40 to +100
–55 to +100
260
°
C
°
C
°
C
°
C
400 K/W
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity IF = 10 mA I
Dominant wavelength IF = 10 mA
Peak wavelength IF = 10 mA
V
l
d
l
p
4 12.5 mcd
612 625 nm
635 nm
Angle of half intensity IF = 10 mA ϕ ±60 deg
Forward voltage IF = 20 mA V
Reverse voltage IR = 10 mA V
Junction capacitance VR = 0, f = 1 MHz C
Typical Characteristics (T
125
100
75
50
V
25
P – Power Dissipation ( mW )
= 25_C, unless otherwise specified)
amb
60
50
40
30
20
F
I – Forward Current ( mA )
10
F
R
j
2.2 2.6 V
6 15 V
15 pF
0
020406080
T
95 10904
Figure 1 Power Dissipation vs. Ambient Temperature
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– Ambient Temperature ( °C )
amb
100
0
020406080
T
95 10905
Figure 2 Forward Current vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
Rev. A1, 04-Feb-99
100
TLMH3101
Vishay Telefunken
10000
T
v
amb
0.02
1000
100
tp/T=0.005
0.2
0.01
0.5
DC
10
F
I – Forward Current ( mA )
0.1
1
0.01 0.1 1 10
t
95 9985
– Pulse Length ( ms )
p
Figure 3 Forward Current vs. Pulse Length
0°
10°20
1.0
0.9
60°C
0.05
2.0
High Efficiency Red
1.6
1.2
0.8
0.4
v rel
I – Relative Luminous Intensity
0
100
95 9993
020406080
T
– Ambient Temperature ( °C )
amb
100
Figure 6 Rel. Luminous Intensity vs.
Ambient Temperature
°
30°
40°
50°
2.4
High Efficiency Red
2.0
1.6
1.2
0.8
0.7
v rel
I – Relative Luminous Intensity
0.4 0.2 0 0.2 0.4
0.6
95 10319
Figure 4 Rel. Luminous Intensity vs.
Angular Displacement
100
High Efficiency Red
10
1
F
I – Forward Current ( mA )
0.1
01234
V
95 9989
– Forward Voltage ( V )
F
0.6
60°
70°
80°
0.8
0.4
v rel
I – Relative Luminous Intensity
0
(mA)
500
I
F
/T
t
p
95 10321
10 20 50 100 200
0.5 0.2 0.1 0.05 0.021
Figure 7 Rel. Lumin. Intensity vs.
Forw. Current/Duty Cycle
10
High Efficiency Red
1
0.1
v rel
I – Relative Luminous Intensity
95 9995
0.01
110
I
– Forward Current ( mA )
F
100
5
Figure 5 Forward Current vs. Forward Voltage
Rev. A1, 04-Feb-99
Figure 8 Relative Luminous Intensity vs. Forward Current
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TLMH3101
Vishay Telefunken
1.2
High Efficiency Red
1.0
0.8
0.6
0.4
0.2
v rel
I – Relative Luminous Intensity
0
590 610 630 650 670
95 10040
Figure 9 Relative Luminous Intensity vs. Wavelength
Dimensions in mm
l
– Wavelength ( nm )
690
95 11314
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Rev. A1, 04-Feb-99
PCB Layout in mm
TLMH3101
Vishay Telefunken
95 10966
Rev. A1, 04-Feb-99
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TLMH3101
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use V ishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly , any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay .de • FaxBack +1-408-970-5600 Document Number 83084
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Rev. A1, 04-Feb-99
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