VISHAY TLME F K2300 Technical data
VISHAY
MiniLED Ultrabright
Description
The new MiniLED Series have been designed in a
small white SMT package. The feature of the device
is the very small package 2.3 mm x 1.3 mm x 1.4 mm.
The MinLED is an obvious solution for small-scale,
high-power products that are expected to work reliability in an arduous environment. This is often the
case in automotive and industrial application.
TLME / F / K2300
Vishay Semiconductors
Features
• SMD LEDs with exceptional brightness
• Luminous intensity categorized
• Compatible with automatic placement equipment
• IR reflow soldering
• Available in 8 mm tape
• Low profile package
• Non-diffused lens: Excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packing unit
I
Vmax/IVmin
≤ 2.0, optional ≤ 1.6
Parts Table
Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology
TLMK2300 Red, I
TLMF2300 Orange, I
TLME2300 Yellow, I
= 80 mcd (typ.) 60 ° AlInGaP on GaAs
V
= 120 mcd (typ.) 60 ° AlInGaP on GaAs
V
= 120 mcd (typ.) 60 ° AlInGaP on GaAs
V
16906
Applications
Automotive: Backlighting in dashboards and switches
Telecommunication: Indicator and backlighting in
telephone and fax
Indicator and backlight for audio and video equipment
Indicator and backlight in office equipment
Flat backlight for LCDs, switches and symbols
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
TLMK230. ,TLMF230. ,TLME230.
Parameter Test condition Symbol Value Unit
Reverse voltage V
DC Forward current T
Surge forward current t
Power dissipation T
Junction temperature T
Operating temperature range T
Storage temperature range T
Soldering temperature according to IPC 9501 T
Thermal resistance junction/
ambient
Document Number 83200
Rev. 1.6, 17-Jun-04
≤ 80 °C I
amb
≤ 10 µsI
p
≤ 80 °C P
amb
mounted on PC board
(pad size > 5 mm
2
)
R
F
FSM
amb
stg
sd
thJA
R
V
j
5V
30 mA
0.1 A
80 mW
125 °C
- 40 to + 100 °C
- 40 to + 100 °C
245 °C
580 K/W
www.vishay.com
1
TLME / F / K2300
Vishay Semiconductors
Optical and Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Red
TLMK230.
Parameter Test condition Symbol Min Ty p. Max Unit
Luminous intensity
1)
Dominant wavelength I
Peak wavelength I
Angle of half intensity I
Forward voltage I
Reverse voltage I
Junction capacitance V
1)
in one Packing Unit I
Vmax/IVmin
Orange
TLMF230.
Parameter Test condition Symbol Min Ty p. Max Unit
Luminous intensity
Dominant wavelength I
Peak wavelength I
Angle of half intensity I
Forward voltage I
Reverse voltage I
Junction capacitance V
1)
in one Packing Unit I
1)
Vmax/IVmin
IF = 20 mA I
= 20 mA λ
F
= 20 mA λ
F
= 20 mA ϕ ± 60 deg
F
= 20 mA V
F
= 10 µAV
R
= 0, f = 1 MHz C
R
≤ 2.0
IF = 20 mA I
= 20 mA λ
F
= 20 mA λ
F
= 20 mA ϕ ± 60 deg
F
= 20 mA V
F
= 10 µAV
R
= 0, f = 1 MHz C
R
≤ 2.0
VISHAY
V
d
p
F
R
j
V
d
p
F
R
j
32 80 mcd
630 nm
643 nm
1.9 2.6 V
5V
15 pF
50 120 mcd
598 605 611 nm
610 nm
2.0 2.6 V
5V
15 pF
Yellow
TLME230.
Parameter Test condition Symbol Min Ty p. Max Unit
Luminous intensity
Dominant wavelength I
Peak wavelength I
Angle of half intensity I
Forward voltage I
Reverse voltage I
Junction capacitance V
1)
in one Packing Unit I
www.vishay.com
2
1)
Vmax/IVmin
IF = 20 mA I
= 20 mA λ
F
= 20 mA λ
F
= 20 mA ϕ ± 60 deg
F
= 20 mA V
F
= 10 µAV
R
= 0, f = 1 MHz C
R
V
d
p
F
R
j
50 120 mcd
581 588 594 nm
590 nm
2.0 2.6 V
5V
15 pF
≤ 2.0
Document Number 83200
Rev. 1.6, 17-Jun-04
VISHAY
TLME / F / K2300
Vishay Semiconductors
Typical Characteristics (T
100
80
60
40
20
V
P –Power Dissipation (mW)
0
0 20406080100120
17523
T
– Ambient Temperature ( qC )
amb
= 25 °C unless otherwise specified)
amb
Figure 1. Power Dissipation vs. Ambient Temperature
40
35
30
25
20
15
10
F
I –Forward Current ( mA )
5
0
0 20406080100120
17524
T
– Ambient Temperature ( qC )
amb
100
Red
10
F
I - Forward Current ( mA )
1
1.0 1.5 2.0 2.5 3.0
17509
VF- Forward V oltage(V)
Figure 4. Forward Current vs. Forward Voltage
2.0
1.8
Red
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Vrel
0.2
I –Relative Luminous Intensity
0.0
0 1020304050607080 90100
T
17510
– Ambient Temperature ( qC )
amb
IF = 20 mA
Figure 2. Forward Current vs. Ambient Temperature
0°
10° 20°
30°
40°
1.0
Vre l
I - Relative Luminous Intensity
95 10319
0.9
0.8
0.7
0.4 0.2 0 0.2 0.4
0.6
50°
60°
70°
80°
0.6
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Document Number 83200
Rev. 1.6, 17-Jun-04
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
10
Red
1
0.1
Vrel
I - Relative Luminous Intensity
0.01
1 10 100
17511
IF- Forward Current ( mA )
Figure 6. Relative Luminous Intensity vs. Forward Current
www.vishay.com
3
TLME / F / K2300
Vishay Semiconductors
VISHAY
1.2
1.1
Red
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
rel
I – Relative Intensity
0.2
0.1
0.0
600 610620 630 640 650 660 670 680 690 700
17512
O – Wavelength ( nm )
Figure 7. Relative Intensity vs. Wavelength
2.10
2.05
2.00
1.95
1.90
1.85
1.80
1.75
F
1.70
V – Forward Voltage ( V )
1.65
1.60
0 1020304050607080 90100
T
17513
– Ambient Temperature ( qC )
amb
Red
IF = 20 mA
1.6
Orange
1.4
1.2
1.0
0.8
0.6
0.4
Vrel
0.2
I – Relative Luminous Intensity
0.0
0 1020304050607080 90100
T
17504
– Ambient Temperature ( qC )
amb
IF = 20 mA
Figure 10. Rel. Luminous Intensity vs. Ambient Temperature
10
Orange
1
0.1
Vrel
I - Relative Luminous Intensity
0.01
1 10 100
17505
IF- Forward Current ( mA )
Figure 8. Forward Voltage vs. Ambient Temperature
100
Orange
10
F
I - Forward Current ( mA )
1
1.0 1.5 2.0 2.5 3.0
17503
VF- Forward V oltage(V)
Figure 9. Forward Current vs. Forward Voltage
www.vishay.com
4
Figure 11. Relative Luminous Intensity vs. Forward Current
1.2
1.1
Orange
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
rel
I – Relative Intensity
0.2
0.1
0.0
560 570580 590 600 610 620 630 640 650 660
17506
O – Wavelength ( nm )
Figure 12. Relative Intensity vs. Wavelength
Document Number 83200
Rev. 1.6, 17-Jun-04
Loading...