TLMA3100
Vishay Semiconductors
Low Current SMD LED
Color Type Technology Angle of Half Intensity
Yellow TLMA3100 GaAsP on GaP 60
Description
These new devices have been designed to meet the
increasing demand for low current SMD LEDs.
The package of the TLMA3100 is the P–LCC–2
(equivalent to a size B tantalum capacitor).
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
±
ö
°
Features
D
SMD LED with exceptional brightness
D
Compatible with automatic placement equipment
D
EIA and ICE standard package
D
Compatible with infrared, vapor phase and wave
solder processes according to CECC
D
Available in 8 mm tape
D
Low profile package
D
Non-diffused lens: excellent for coupling to light
pipes and backlighting
D
Very low power consumption
D
Luminous intensity ratio in one packaging unit
I
Vmax/IVmin
x 2.0
Applications
Automotive: backlighting in dashboards and switches
Telecommunication: indicator and backlighting in
telephone and fax
Indicator and backlight for audio and video equipment
Indicator and backlight for battery driven equipment
Small indicator for outdoor applications
Indicator and backlight in office equipment
Flat backlight for LCDs, switches and symbols
General use
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
TLMA3100
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
DC forward current I
Surge forward current tp ≤ 10 ms I
Power dissipation T
Junction temperature T
Operating temperature range T
Storage temperature range T
Soldering temperature t ≤ 5 s T
Thermal resistance junction/ambient
≤ 90°C P
amb
mounted on PC board
(pad size > 16 mm2)
R
R
F
FSM
V
amb
stg
sd
thJA
94 8553
6 V
7 mA
0.5 A
20 mW
j
100
–40 to +100
–55 to +100
260
500 K/W
°
C
°
C
°
C
°
C
Document Number 83033
Rev. A4, 29-Sep-00
www.vishay .com
1 (5)
TLMA3100
Vishay Semiconductors
Optical and Electrical Characteristics
T
= 25_C, unless otherwise specified
amb
Yellow (TLMA3100 )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity
Dominant wavelength IF = 2 mA
Peak wavelength IF = 2 mA
Angle of half intensity IF = 2 mA ϕ ±60 deg
Forward voltage IF = 2 mA V
Reverse voltage IR = 10 mA V
Junction capacitance VR = 0, f = 1 MHz C
2)
in one Packing Unit IV Min./ IV Max. v 2
2)
IF = 2 mA I
0.25 2.5 mcd
V
l
l
581 594 nm
d
p
F
R
j
585 nm
2.2 2.9 V
6 20 V
50 pF
Typical Characteristics (T
25
20
15
10
V
5
P – Power Dissipation ( mW )
0
020406080
T
95 10841
– Ambient Temperature ( °C )
amb
= 25_C, unless otherwise specified)
amb
100
Figure 1. Power Dissipation vs. Ambient Temperature
10
8
6
1.0
0.9
0.8
0.7
v rel
I – Relative Luminous Intensity
0.4 0.2 0 0.2 0.4
0.6
95 10319
Figure 3. Rel. Luminous Intensity vs.
Angular Displacement
100
Yellow
10
0°
10°20
°
30°
40°
50°
60°
70°
80°
0.6
4
F
I – Forward Current ( mA )
2
95 10842
0
020406080
T
– Ambient Temperature ( °C )
amb
100
Figure 2. Forward Current vs. Ambient Temperature
www.vishay .com Document Number 83033
2 (5)
1
F
I – Forward Current ( mA )
tp/T=0.001
t
=10ms
p
95 10053
0.1
01234
– Forward Voltage ( V )
V
F
Figure 4. Forward Current vs. Forward Voltage
Rev. A4, 29-Sep-00
5
TLMA3100
Vishay Semiconductors
2.0
Yellow
1.6
1.2
0.8
0.4
v rel
I – Relative Luminous Intensity
0
0
20 40 60 80
95 10054
T
– Ambient Temperature ( °C )
amb
Figure 5. Rel. Luminous Intensity vs.
Ambient Temperature
2.4
Yellow
2.0
1.6
1.2
100
100
Yellow
10
1
0.1
v rel
I – Relative Luminous Intensity
95 10062
0.01
0.1 1 10
IF – Forward Current ( mA )
100
Figure 7. Relative Luminous Intensity vs. Forward Current
1.2
Yellow
1.0
0.8
0.6
0.8
0.4
v rel
I – Relative Luminous Intensity
0
10 20 50 100 200
95 10264
0.5 0.2 0.1 0.05 0.021
Figure 6. Rel. Lumin. Intensity vs.
Forw. Current/Duty Cycle
500
I
(mA)
F
t
p
0.4
0.2
v rel
I – Relative Luminous Intensity
0
550 570 590 610 630
/T
95 10039
l
– Wavelength ( nm )
650
Figure 8. Relative Luminous Intensity vs. Wavelength
Document Number 83033
Rev. A4, 29-Sep-00
www.vishay .com
3 (5)
TLMA3100
Vishay Semiconductors
Dimensions in mm
PCB Layout in mm
95 11314
95 10966
www.vishay .com Document Number 83033
4 (5)
Rev. A4, 29-Sep-00
TLMA3100
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 83033
Rev. A4, 29-Sep-00
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay .com
5 (5)
This datasheet has been download from:
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