VISHAY TLMA3100 Technical data

TLMA3100
Vishay Semiconductors
Low Current SMD LED
Yellow TLMA3100 GaAsP on GaP 60
Description
These new devices have been designed to meet the increasing demand for low current SMD LEDs. The package of the TLMA3100 is the P–LCC–2 (equivalent to a size B tantalum capacitor). It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy.
±
ö
°
Features
D
SMD LED with exceptional brightness
D
Compatible with automatic placement equipment
D
EIA and ICE standard package
D
Compatible with infrared, vapor phase and wave solder processes according to CECC
D
Available in 8 mm tape
D
Low profile package
D
Non-diffused lens: excellent for coupling to light pipes and backlighting
D
Very low power consumption
D
Luminous intensity ratio in one packaging unit I
Vmax/IVmin
x 2.0
Applications
Automotive: backlighting in dashboards and switches Telecommunication: indicator and backlighting in telephone and fax Indicator and backlight for audio and video equipment Indicator and backlight for battery driven equipment Small indicator for outdoor applications Indicator and backlight in office equipment Flat backlight for LCDs, switches and symbols General use
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
TLMA3100
Parameter Test Conditions Symbol Value Unit Reverse voltage V DC forward current I Surge forward current tp 10 ms I Power dissipation T Junction temperature T Operating temperature range T Storage temperature range T Soldering temperature t 5 s T
Thermal resistance junction/ambient
90°C P
amb
mounted on PC board (pad size > 16 mm2)
R
R
F
FSM
V
amb
stg
sd
thJA
94 8553
6 V 7 mA
0.5 A 20 mW
j
100 –40 to +100 –55 to +100
260
500 K/W
°
C
°
C
°
C
°
C
Document Number 83033 Rev. A4, 29-Sep-00
www.vishay .com
1 (5)
TLMA3100
Vishay Semiconductors
Optical and Electrical Characteristics
T
= 25_C, unless otherwise specified
amb
Yellow (TLMA3100 )
Parameter Test Conditions Type Symbol Min Typ Max Unit Luminous intensity Dominant wavelength IF = 2 mA Peak wavelength IF = 2 mA Angle of half intensity IF = 2 mA ϕ ±60 deg Forward voltage IF = 2 mA V Reverse voltage IR = 10 mA V Junction capacitance VR = 0, f = 1 MHz C
2)
in one Packing Unit IV Min./ IV Max. v 2
2)
IF = 2 mA I
0.25 2.5 mcd
V
l l
581 594 nm
d p
F
R
j
585 nm
2.2 2.9 V
6 20 V
50 pF
Typical Characteristics (T
25
20
15
10
V
5
P – Power Dissipation ( mW )
0
020406080
T
95 10841
– Ambient Temperature ( °C )
amb
= 25_C, unless otherwise specified)
amb
100
Figure 1. Power Dissipation vs. Ambient Temperature
10
8
6
1.0
0.9
0.8
0.7
v rel
I – Relative Luminous Intensity
0.4 0.2 0 0.2 0.4
0.6
95 10319
Figure 3. Rel. Luminous Intensity vs.
Angular Displacement
100
Yellow
10
0°
10°20
°
30°
40°
50°
60° 70°
80°
0.6
4
F
I – Forward Current ( mA )
2
95 10842
0
020406080
T
– Ambient Temperature ( °C )
amb
100
Figure 2. Forward Current vs. Ambient Temperature
www.vishay .com Document Number 83033 2 (5)
1
F
I – Forward Current ( mA )
tp/T=0.001 t
=10ms
p
95 10053
0.1 01234
– Forward Voltage ( V )
V
F
Figure 4. Forward Current vs. Forward Voltage
Rev. A4, 29-Sep-00
5
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