VISHAY TLDR5400 Technical data
VISHAY
e2
Pb
Pb-free
19223
High Intensity LED, ∅ 5 mm Tinted Diffused
Description
This LED contains the double heterojunction (DH)
GaAlAs on GaAs technology.
This deep red LED can be utilized over a wide range
of drive current. It can be DC or pulse driven to
achieve desired light output.
The device is available in a tinted diffused 5 mm package with a wide radiation angle.
Features
• Exceptional brightness
TLDR5400
Vishay Semiconductors
• Very high intensity even at low drive currents
• Wide viewing angle
• Low forward voltage
• 5 mm (T-1¾) tinted diffused package
• Deep red color
• Categorized for luminous intensity
• Outstanding material efficiency
Applications
Bright ambient lighting conditions
Battery powered equipment
Indoor and outdoor information displays
Portable equipment
Telecommunication indicators
General use
• Lead-free device
Parts Table
Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology
TLDR5400 Red, I
> 35 mcd 30 ° GaAIAs on GaAs
V
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
TLDR5400
Parameter Test condition Symbol Value Unit
Reverse voltage V
DC Forward current I
Surge forward current t
Power dissipation T
Junction temperature T
Operating temperature range T
Storage temperature range T
Soldering temperature t ≤ 5 s, 2 mm from body T
Thermal resistance junction/
ambient
≤ 10 µsI
p
≤ 65 °C P
amb
R
F
FSM
amb
stg
sd
thJA
R
V
j
6V
50 mA
1A
100 mW
100 °C
- 40 to + 100 °C
- 55 to + 100 °C
260 °C
350 K/W
Document Number 83003
Rev. 1.4, 30-Aug-04
www.vishay.com
1
TLDR5400
VISHAY
Vishay Semiconductors
Optical and Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Red
TLDR5400
Parameter Test condition Symbol Min Ty p. Max Unit
Luminous intensity
1)
Luminous intensity I
Dominant wavelength I
Peak wavelength I
Spectral line half width ∆λ 20 nm
Angle of half intensity I
Forward voltage I
Reverse current V
Junction capacitance V
1)
in one Packing Unit I
Vmin/IVmax
IF = 20 mA I
= 1 mA I
F
= 20 mA λ
F
= 20 mA λ
F
= 20 mA ϕ ± 30 deg
F
= 20 mA V
F
= 6 V I
R
= 0, f = 1 MHz C
R
V
V
d
p
F
R
j
35 70 mcd
3mcd
648 nm
650 nm
1.8 2.2 V
10 µA
30 pF
≤ 0.5
Typical Characteristics (T
125
100
75
50
25
V
P - Power Dissipation ( mW )
0
0 10080604020
T
95 10918
− Ambient Temperature ( °C)
amb
= 25 °C unless otherwise specified)
amb
Figure 1. Power Dissipation vs. Ambient Temperature
60
50
40
30
20
F
10
I - Forward Current ( mA )
0
04020 60 80
T
96 11489
- Ambient Temperature ( °C)
amb
100
Figure 2. Forward Current vs. Ambient Temperature for AlInGaP
www.vishay.com
2
Document Number 83003
Rev. 1.4, 30-Aug-04
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