VISHAY
e3
Pb
Pb-free
19220
High Intensity LED in ∅ 3 mm Clear Package
Description
This LED contains the double heterojunction (DH)
GaAlAs on GaAs technology.
This deep red LED can be utilized over a wide range
of drive current. It can be DC or pulse driven to
achieve desired light output.
The device is available in a clear 3 mm package.
Features
• Exceptional brightness
• Very high intensity even at low drive currents
TLDR490.
Vishay Semiconductors
• Small viewing angle
• Low forward voltage
• 3 mm (T-1) untinted non-diffused package
• Deep red color
• Categorized for luminous intensity
• Outstanding material efficiency
• Lead-free device
Applications
Bright ambient lighting conditions
Battery powered equipment
Indoor and outdoor information displays
Portable equipment
Telecommunication indicators
General use
Parts Table
Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology
TLDR4900 Red, I
TLDR4901 Red, I
> 63 mcd 16 ° GaAIAs on GaAs
V
= (63 to 200) mcd 16 ° GaAIAs on GaAs
V
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
TLDR490.
Parameter Test condition Symbol Value Unit
Reverse voltage V
DC Forward current I
Surge forward current t
Power dissipation T
Junction temperature T
Operating temperature range T
Storage temperature range T
Soldering temperature t ≤ 5 s, 2 mm from body T
Thermal resistance junction/
ambient
≤ 10 µsI
p
≤ 60 °C P
amb
R
F
FSM
amb
stg
sd
thJA
R
V
j
6V
50 mA
1A
100 mW
100 °C
- 40 to + 100 °C
- 55 to + 100 °C
260 °C
400 K/W
Document Number 83002
Rev. 1.4, 30-Aug-04
www.vishay.com
1
TLDR490.
Vishay Semiconductors
Optical and Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Red
TLDR490.
Parameter Test condition Part Symbol Min Ty p. Max Unit
Luminous intensity
1)
Luminous intensity I
Dominant wavelength I
Peak wavelength I
Spectral line half width I
Angle of half intensity I
Forward voltage I
Reverse current V
Junction capacitance V
1)
in one Packing Unit I
Vmin/IVmax
IF = 20 mA TLDR4900 I
= 1 mA I
F
= 20 mA λ
F
= 20 mA λ
F
= 20 mA ∆λ 20 nm
F
= 20 mA ϕ ± 16 deg
F
= 20 mA V
F
= 6 V I
R
= 0, f = 1 MHz C
R
≤ 0.5
TLDR4901 I
VISHAY
V
V
V
d
p
F
R
j
63 200 mcd
63 200 mcd
8mcd
648 nm
650 nm
1.8 2.2 V
10 µA
30 pF
Typical Characteristics (T
125
100
75
50
25
V
P - Power Dissipation ( mW )
0
200
T
95 10904
- Ambient Temperature ( °C)
amb
= 25 °C unless otherwise specified)
amb
Figure 1. Power Dissipation vs. Ambient Temperature
60
50
40
30
20
F
I - Forward Current ( mA )
10
0
100806040
020406080100
T
95 10095
- Ambient Temperature (° C)
amb
Figure 2. Forward Current vs. Ambient Temperature for InGaN
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2
Document Number 83002
Rev. 1.4, 30-Aug-04
VISHAY
TLDR490.
Vishay Semiconductors
10000
tp/T= 0.01
1000
100
1
10
F
I - Forward Current ( mA )
0.5
1
0.01 0.1 1 10
t
95 10047
- Pulse Length ( ms )
p
Figure 3. Forward Current vs. Pulse Length
1.0
0.9
0.8
0.7
v rel
I - Relative Luminous Intensity
0.4 0.2 0 0.2 0.4
0.6
95 10044
T
≤
ı
amb
0.02
0.05
0.2
0.1
0°°°
10 20
65 ° C
0.6
100
30°
40°
50°
60°
70°
80°
2.0
Red
1.6
1.2
0.8
0.4
v rel
I - Relative Luminous Intensity
0
0
20 40 60 80 100
T
95 10015
- Ambient Temperature ( ° C)
amb
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
2.4
Red
2.0
1.6
1.2
0.8
0.4
v rel
I
I - Relative Luminous Intensity
= 10 mA, const.
FAV
0
(mA)
10 20 50 100 200
95 10262
0.5 0.2 0.1 0.05 0.021
500
I
F
t
/T
p
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
100
Red
10
F
I - Forward Current ( mA )
1
1 1.5 2 2.5
95 10014
VF- Forward Voltage(V)
3
Figure 5.
Document Number 83002
Rev. 1.4, 30-Aug-04
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
10
Red
1
0.1
v rel
I - Relative Luminous Intensity
0.01
95 10016
100.1 1
IF- Forward Current ( mA )
100
Figure 8. Relative Luminous Intensity vs. Forward Current
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3
TLDR490.
Vishay Semiconductors
1.2
Red
1.0
0.8
0.6
0.4
0.2
v rel
I - Relative Luminous Intensity
0
600 620 640 660 680
95 10018
Figure 9. Relative Intensity vs. Wavelength
Package Dimensions in mm
λ - Wavelength ( nm )
VISHAY
700
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4
95 10952
Document Number 83002
Rev. 1.4, 30-Aug-04
VISHAY
TLDR490.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83002
Rev. 1.4, 30-Aug-04
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5
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
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