VISHAY TLDR490 Technical data
VISHAY
e3
Pb
Pb-free
19220
High Intensity LED in ∅ 3 mm Clear Package
Description
This LED contains the double heterojunction (DH)
GaAlAs on GaAs technology.
This deep red LED can be utilized over a wide range
of drive current. It can be DC or pulse driven to
achieve desired light output.
The device is available in a clear 3 mm package.
Features
• Exceptional brightness
• Very high intensity even at low drive currents
TLDR490.
Vishay Semiconductors
• Small viewing angle
• Low forward voltage
• 3 mm (T-1) untinted non-diffused package
• Deep red color
• Categorized for luminous intensity
• Outstanding material efficiency
• Lead-free device
Applications
Bright ambient lighting conditions
Battery powered equipment
Indoor and outdoor information displays
Portable equipment
Telecommunication indicators
General use
Parts Table
Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology
TLDR4900 Red, I
TLDR4901 Red, I
> 63 mcd 16 ° GaAIAs on GaAs
V
= (63 to 200) mcd 16 ° GaAIAs on GaAs
V
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
TLDR490.
Parameter Test condition Symbol Value Unit
Reverse voltage V
DC Forward current I
Surge forward current t
Power dissipation T
Junction temperature T
Operating temperature range T
Storage temperature range T
Soldering temperature t ≤ 5 s, 2 mm from body T
Thermal resistance junction/
ambient
≤ 10 µsI
p
≤ 60 °C P
amb
R
F
FSM
amb
stg
sd
thJA
R
V
j
6V
50 mA
1A
100 mW
100 °C
- 40 to + 100 °C
- 55 to + 100 °C
260 °C
400 K/W
Document Number 83002
Rev. 1.4, 30-Aug-04
www.vishay.com
1
TLDR490.
Vishay Semiconductors
Optical and Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Red
TLDR490.
Parameter Test condition Part Symbol Min Ty p. Max Unit
Luminous intensity
1)
Luminous intensity I
Dominant wavelength I
Peak wavelength I
Spectral line half width I
Angle of half intensity I
Forward voltage I
Reverse current V
Junction capacitance V
1)
in one Packing Unit I
Vmin/IVmax
IF = 20 mA TLDR4900 I
= 1 mA I
F
= 20 mA λ
F
= 20 mA λ
F
= 20 mA ∆λ 20 nm
F
= 20 mA ϕ ± 16 deg
F
= 20 mA V
F
= 6 V I
R
= 0, f = 1 MHz C
R
≤ 0.5
TLDR4901 I
VISHAY
V
V
V
d
p
F
R
j
63 200 mcd
63 200 mcd
8mcd
648 nm
650 nm
1.8 2.2 V
10 µA
30 pF
Typical Characteristics (T
125
100
75
50
25
V
P - Power Dissipation ( mW )
0
200
T
95 10904
- Ambient Temperature ( °C)
amb
= 25 °C unless otherwise specified)
amb
Figure 1. Power Dissipation vs. Ambient Temperature
60
50
40
30
20
F
I - Forward Current ( mA )
10
0
100806040
020406080100
T
95 10095
- Ambient Temperature (° C)
amb
Figure 2. Forward Current vs. Ambient Temperature for InGaN
www.vishay.com
2
Document Number 83002
Rev. 1.4, 30-Aug-04
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