VISHAY TLDR440 Technical data
VISHAY
e3
Pb
Pb-free
19220
High Intensity LED, ∅ 3 mm Tinted Diffused
Description
This LED contains the double heterojunction (DH)
GaAlAs on GaAs technology.
This deep red LED can be utilized over a wide range
of drive current. It can be DC or pulse driven to
achieve desired light output.
The device is available in a 3 mm tinted diffused package.
Features
• Exceptional brightness
TLDR440.
Vishay Semiconductors
• Very high intensity even at low drive currents
• Wide viewing angle
• Low forward voltage
• 3 mm (T-1) tinted diffused package
• Deep red color
• Categorized for luminous intensity
• Outstanding material efficiency
Applications
Bright ambient lighting conditions
Battery powered equipment
Indoor and outdoor information displays
Portable equipment
Telecommunication indicators
General use
• Lead-free device
Parts Table
Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology
TLDR4400 Red,I
TLDR4401 Red, I
> 25 mcd 40 ° GaAIAs on GaAs
V
= (25 to 50) mcd 40 ° GaAIAs on GaAs
V
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
TLDR440.
Parameter Test condition Symbol Value Unit
Reverse voltage V
DC Forward current T
Surge forward current t
Power dissipation T
Junction temperature T
Operating temperature range T
Storage temperature range T
Soldering temperature t ≤ 5 s, 2 mm from body T
Thermal resistance junction/
ambient
≤ 60 °C I
amb
≤ 10 µsI
p
≤ 60 °C P
amb
R
F
FSM
amb
stg
sd
thJA
R
V
j
6V
50 mA
1A
100 mW
100 °C
- 40 to + 100 °C
- 55 to + 100 °C
260 °C
400 K/W
Document Number 83001
Rev. 1.4, 30-Aug-04
www.vishay.com
1
TLDR440.
Vishay Semiconductors
Optical and Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Red
TLDR440.
Parameter Test condition Part Symbol Min Ty p. Max Unit
Luminous intensity
1)
Luminous intensity I
Dominant wavelength I
Peak wavelength I
Spectral line half width I
Angle of half intensity I
Forward voltage I
Reverse current V
Junction capacitance V
1)
in one Packing Unit I
Vmin/IVmax
IF = 20 mA TLDR4400 I
= 1 mA I
F
= 20 mA λ
F
= 20 mA λ
F
= 20 mA ∆λ 20 nm
F
= 20 mA ϕ ± 40 deg
F
= 20 mA V
F
= 6 V I
R
= 0, f = 1 MHz C
R
≤ 0.5
TLDR4401 I
VISHAY
V
V
V
d
p
F
R
j
25 45 mcd
25 50 mcd
2mcd
648 nm
650 nm
1.8 2.2 V
10 µA
30 pF
Typical Characteristics (T
125
100
75
50
25
V
P - Power Dissipation ( mW )
0
200
T
95 10904
- Ambient Temperature ( °C)
amb
= 25 °C unless otherwise specified)
amb
Figure 1. Power Dissipation vs. Ambient Temperature
60
50
40
30
20
F
I - Forward Current ( mA )
10
0
100806040
020406080100
T
95 10095
- Ambient Temperature (°C)
amb
Figure 2. Forward Current vs. Ambient Temperature for InGaN
www.vishay.com
2
Document Number 83001
Rev. 1.4, 30-Aug-04
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