VISHAY TFDU6300 Technical data

TFDU6300

Vishay Semiconductors

Fast Infrared Transceiver Module (FIR, 4 Mbit/s)
for 2.4 V to 3.6 V Operation

Description

The TFDU6300 transceiver is an infrared transceiver
module compliant to the latest IrDA physical layer
low-power standard for fast infrared data communica­tion, supporting IrDA speeds up to 4 Mbit/s (FIR),
HP-SIR
trol modes up to 2 MHz. Integrated within the trans­ceiver module is a photo PIN diode, an infrared
emitter (IRED), and a low-power control IC to provide
a total front-end solution in a single package.
This new Vishay FIR transceiver is built in a new
smaller package using the experiences of the lead
frame BabyFace technology. The transceivers are
capable of directly interfacing with a wide variety of
I/O
tion function. At a minimum, a Vcc bypass capacitor is

®

, Sharp ASK® and carrier based remote con-

devices, which perform the modulation/demodula-

20101

the only external component required implementing a
complete solution. TFDU6300 has a tri-state output
and is floating in shutdown mode with a weak pull-up.
An otherwise identical transceiver with low-voltage
(1.8 V) logic levels is available as TFDU6301.

Features

• Compliant to the latest IrDA physical layer
specification (up to 4 Mbit/s) with an
extended low power range of > 70 cm
(typ. 1 m) and TV Remote Control (> 9 m)

• Operates from 2.4 V to 3.6 V within
specification

• Low power consumption (1.8 mA typ. supply
current)

• Power shutdown mode (0.01 µA typ. shutdown
current)

• Surface mount package

- Universal (L 8.5 mm x H 2.5 mm x W 3.1 mm)

• Tri-state-receiver output, floating in shut down with
a weak pull-up

e3

Applications

• Notebook computers, desktop PCs, Palmtop
computers (Win CE, Palm PC), PDAs

• Digital cameras and video cameras

• Printers, fax machines, photocopiers, screen
projectors

• Low profile (universal) package capable of surface
mount soldering to side and top view orientation

• Directly interfaces with various Super I/O and con­troller devices

• Only one external component required

• Split power supply, transmitter and receiver can be
operated from two power supplies with relaxed
requirements saving costs

• Lead (Pb)-free device

• Qualified for lead (Pb)-free and Sn/Pb processing
(MSL4)

• Device in accordance with RoHS 2002/95/EC and
WEEE 2002/96EC

• Telecommunication products (cellular phones,
pagers)

• Internet TV boxes, video conferencing systems

• External infrared adapters (dongles)

• Medical and industrial data collection

Parts Table

Part Description Qty/Reel or Tube

TFDU6300-TR3 Oriented in carrier tape for side view surface mounting 2500 pcs

TFDU6300-TT3 Oriented in carrier tape for side view surface mounting 2500 pcs

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308

Document Number 84763

Rev. 1.3, 06-Dec-06

TFDU6300

Vishay Semiconductors

Functional Block Diagram

V

CC1

Tr i- Stat e
Dr iv er

Contro lle d
Dr iv er

18468_1

SD

TXD

Am pl if ie r

Co mp ar ator

Lo gi c
&

Contro l

GND

Figure 1. Functional Block Diagram

Pin Description

Pin Number Function Description I/O Active

(V

1V

CC2

IRED Anode

IRED anode to be externally connected to V
than 3.6 V an external resistor might be necessary for reducing the internal

cc2

power dissipation. This pin is allowed to be supplied from an uncontrolled

power supply separated from the controlled V

2IRED

IRED cathode, internally connected to driver transistor

Cathode

3 TXD This input is used to transmit serial data when SD is low. An on-chip

protection circuit disables the IRED driver if the TXD pin is asserted for

longer than 100 µs. When used in conjunction with the SD pin, this pin is

also used to control the receiver mode. Logic reference: V

4 RXD Received data output, push-pull CMOS driver output capable of driving

standard CMOS. No external pull-up or pull-down resistor is required.

Floating with a weak pull-up of 500 kOhm (typ.) in shutdown mode. High/

Low levels related to V

. RXD echoes the TXD signal.

cc1

5 SD Shutdown, also used for dynamic mode switching. Setting this pin active

places the module into shutdown mode. On the falling edge of this signal,

the state of the TXD pin is sampled and used to set receiver low bandwidth

(TXD = Low: SIR) or high bandwidth (TXD = High: MIR and FIR) mode.

6V

CC1

Supply voltage

7 NC Internally not connected. I

8 GND Ground

). For higher voltages

IRED

- supply.

cc1

cc1

RXD

V

CC2

IHIGH

OLOW

IHIGH

Document Number 84763

Rev. 1.3, 06-Dec-06

TFDU6301
weight 0.075 g

19531

Figure 2. Pinning

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TFDU6300

Vishay Semiconductors

Absolute Maximum Ratings

Reference point Pin: GND unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Parameter Test Conditions Symbol Min Ty p. Max Unit

Supply voltage range,

0 V < V

< 6 V V

CC2

CC1

transceiver

Supply voltage range,
transmitter

Voltage at all I/O pins V

0 V < V

in

< 6 V V

CC1

< V

is allowed - 0.5 6 V

CC1

CC2

Input currents For all pins, except IRED anode pin 10 mA

Output sinking current 25 mA

Power dissipation P

Junction temperature T

Ambient temperature range
(operating)

Storage temperature range T

D

J

T

amb

stg

Soldering temperature See chapter “Recommended

Solder Profiles”

Average output current I

Repetitive pulse output current < 90 µs, t

< 20 % I

on

(DC) 150 mA

IRED

(RP) 700 mA

IRED

ESD protection Human body model 1 kV

Virtual source size Method: (1-1/e) encircled energy d 1.8 2.0 mm

Maximum Intensity for Class 1 IEC60825-1 or EN60825-1,

edition Jan. 2001

I

e

*) Due to the internal limitation measures and the IrDA defined transmission protocol the device is a "class 1" device when operated inside
the absolute maximum ratings
**) IrDA specifies the maximum intensity with 500 mW/sr

- 0.5 6 V

- 0.5 6.5 V

500 mW

125 °C

- 25 + 85 °C

- 25 + 85 °C

260 °C

*)

(500)

mW/sr

**)

Definitions

:

In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes:

SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhy 1.0

MIR: 576 kbit/s to 1152 kbit/s

FIR: 4 Mbit/s

VFIR: 16 Mbit/s

MIR and FIR were implemented with IrPhy 1.1, followed by IrPhy 1.2, adding the SIR Low Power Standard. IrPhy 1.3 extended the Low

Power Option to MIR and FIR and VFIR was added with IrPhy 1.4. A new version of the standard in any case obsoletes the former version.

With introducing the updated versions the old versions are obsolete. Therefore the only valid IrDA standard is the actual version IrPhy 1.4

(in Oct. 2002).

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310

Document Number 84763

Rev. 1.3, 06-Dec-06

TFDU6300

Vishay Semiconductors

Electrical Characteristics

Transceiver

T

= 25 °C, V

amb

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Supply voltage V

Dynamic Supply current Receive mode only, idle

Shutdown supply current SD = High

Shutdown supply current SD = High, full specified

Operating temperature range T

Input voltage low (TXD, SD) V

Input voltage high (TXD, SD) CMOS level*

Input leakage current (TXD, SD) V

Input capacitance, TXD, SD C

Output voltage low I

Output voltage high I

Output RXD current limitation
high state
low state

SD shutdown pulse duration Activating shutdown 30 ∞ µs

RXD to V

CC1

SD mode programming pulse
duration

*)

The typical threshold level is 0.5 x V

current.

CC1

= V

= 2.4 V to 3.6 V unless otherwise noted.

CC2

Parameter Test Conditions Symbol Min Ty p. Max Unit

CC

2.4 3.6 V

In transmit mode, add additional 85 mA (typ) for IRED current.

Add RXD output current depending on RXD load.

SIR mode I

MIR/FIR mode I

CC

CC

I

SD

1.8 3.0 mA

2.0 3.3 mA

0.01 µA
T= 25 °C, not ambient light
sensitive, detector is disabled in
shutdown mode

I

SD

1µA
temperature range, not ambient
light sensitive

- 25 + 85 °C

- 0.5 0.5 V

VCC - 0.3 6 V

- 1 + 1 µA

5pF

0.4

0.9 x V

CC1

20
20

400 500 600 kΩ

200 ns

)

= 0.9 x V

in

= 500 µA

OL

C

load

= - 250 µA

OH

C

load

CC1

= 15 pF

= 15 pF

Short to Ground
Short to V

CC1

impedance R

All modes t

(V

CC1

= 3 V). It is recommended to use the specified min/max values to avoid increased operating

CC1

A

IL

V

IH

I

ICH

I

V

OL

V

OH

RXD

SDPW

V

V

mA
mA

Document Number 84763

Rev. 1.3, 06-Dec-06

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311

TFDU6300

Vishay Semiconductors

Optoelectronic Characteristics

Receiver

T

= 25 °C, V

amb

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Minimum irradiance E
angular range**

Minimum irradiance E
angular range, MIR mode

Minimum irradiance E
inangular range, FIR mode

Maximum irradiance E
angular range***

Rise time of output signal 10 % to 90 %, C

Fall time of output signal 90 % to 10 %, C

RXD pulse width of output
signal, 50 %, SIR mode

RXD pulse width of output
signal, 50 %, MIR mode

RXD pulse width of output
signal, 50 %, FIR mode

RXD pulse width of output
signal, 50 %, FIR mode

Stochastic jitter, leading edge

Receiver start up time

Latency t

Note: All timing data measured with 4 Mbit/s are measured using the IrDA
after starting the preamble.

*)

IrDA low power specification is 90 mW/m2. Specification takes into account a window loss of 10 %.

**) IrDA sensitivity definition (equivalent to threshold irradiance):

Minimum Irradiance E

ating at the minimum intensity in angular range into the minimum half-angle range at the maximum Link Length.

***) Maximum Irradiance E
at the maximum intensity in angular range at Minimum Link Length must not cause receiver overdrive distortion and possible related link
errors. If placed at the Active Output Interface reference plane of the transmitter, the receiver must meet its bit error ratio (BER) specifi­cation.

For more definitions see the document "Symbols and Terminology" on the Vishay Website
(http://www.vishay.com/docs/82512/82512.pdf).

= V

CC1

= 2.4 V to 3.6 V unless otherwise noted.

CC2

Parameter Test Conditions Symbol Min Ty p. Max Unit

*) in

e

)

in

e

e

in

e

)

9.6 kbit/s to 115.2 kbit/s
λ = 850 nm to 900 nm,
V

= 2.4 V

CC

1.152 Mbit/s
λ = 850 nm to 900 nm,
V

= 2.4 V

CC

4 Mbit/s
λ = 850 nm to 900 nm,
V

= 2.4 V

CC

λ = 850 nm to 900 nm E

= 15 pF

L

= 15 pF

L

t

r (RXD)

t

f (RXD)

Input pulse length

1.4 µs < P

Wopt

< 25 µs

Input pulse length
P

= 217 ns, 1.152 Mbit/s

Wopt

Input pulse length
P

= 125 ns, 4 Mbit/s

Wopt

Input pulse length
P

= 250 ns, 4 Mbit/s

Wopt

Input irradiance = 100 mW/m

2

,

4.0 Mbit/s

1.152 Mbit/s
≤ 115.2 kbit/s

t

t

t

t

E

E

E

PW

PW

PW

PW

e

e

e

e

5

(500)

50
(5)

100
(10)

130
(13)

80
(8)

200
(20)

mW/m2

(µW/cm

mW/m2

(µW/cm

mW/m2

(µW/cm

kW/m2

(mW/cm

10 40 ns

10 40 ns

1.6 2.2 3 µs

105 250 275 ns

105 125 145 ns

225 250 275 ns

25
80

350

ns
ns
ns

After completion of shutdown
programmimg sequence

250 µs

Power on dalay

L

®

FIR transmission header. The data given here are valid 5 µs

In Angular Range, power per unit area. The receiver must meet the BER specification while the source is oper-

e

In Angular Range, power per unit area. The optical power delivered to the detector by a source operating

e

40 100 µs

2

)

2

)

2

)

2

)

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312

Document Number 84763

Rev. 1.3, 06-Dec-06