Fast Infrared Transceiver Module (FIR, 4 Mbit/s)
for 2.4 V to 3.6 V Operation
Description
The TFDU6300 transceiver is an infrared transceiver
module compliant to the latest IrDA physical layer
low-power standard for fast infrared data communication, supporting IrDA speeds up to 4 Mbit/s (FIR),
HP-SIR
trol modes up to 2 MHz. Integrated within the transceiver module is a photo PIN diode, an infrared
emitter (IRED), and a low-power control IC to provide
a total front-end solution in a single package.
This new Vishay FIR transceiver is built in a new
smaller package using the experiences of the lead
frame BabyFace technology. The transceivers are
capable of directly interfacing with a wide variety of
I/O
tion function. At a minimum, a Vcc bypass capacitor is
®
, Sharp ASK® and carrier based remote con-
devices, which perform the modulation/demodula-
20101
the only external component required implementing a
complete solution. TFDU6300 has a tri-state output
and is floating in shutdown mode with a weak pull-up.
An otherwise identical transceiver with low-voltage
(1.8 V) logic levels is available as TFDU6301.
Features
• Compliant to the latest IrDA physical layer
specification (up to 4 Mbit/s) with an
extended low power range of > 70 cm
(typ. 1 m) and TV Remote Control (> 9 m)
• Operates from 2.4 V to 3.6 V within
specification
• Low power consumption (1.8 mA typ. supply
current)
• Power shutdown mode (0.01 µA typ. shutdown
current)
• Surface mount package
- Universal (L 8.5 mm x H 2.5 mm x W 3.1 mm)
• Tri-state-receiver output, floating in shut down with
a weak pull-up
Maximum Intensity for Class 1IEC60825-1 or EN60825-1,
edition Jan. 2001
I
e
*) Due to the internal limitation measures and the IrDA defined transmission protocol the device is a "class 1" device when operated inside
the absolute maximum ratings
**) IrDA specifies the maximum intensity with 500 mW/sr
- 0.56V
- 0.56.5V
500mW
125°C
- 25+ 85°C
- 25+ 85°C
260°C
*)
(500)
mW/sr
**)
Definitions
:
In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes:
SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhy 1.0
MIR: 576 kbit/s to 1152 kbit/s
FIR: 4 Mbit/s
VFIR: 16 Mbit/s
MIR and FIR were implemented with IrPhy 1.1, followed by IrPhy 1.2, adding the SIR Low Power Standard. IrPhy 1.3 extended the Low
Power Option to MIR and FIR and VFIR was added with IrPhy 1.4. A new version of the standard in any case obsoletes the former version.
With introducing the updated versions the old versions are obsolete. Therefore the only valid IrDA standard is the actual version IrPhy 1.4
(in Oct. 2002).
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310
Document Number 84763
Rev. 1.3, 06-Dec-06
TFDU6300
Vishay Semiconductors
Electrical Characteristics
Transceiver
T
= 25 °C, V
amb
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Supply voltageV
Dynamic Supply current Receive mode only, idle
Shutdown supply currentSD = High
Shutdown supply currentSD = High, full specified
Operating temperature rangeT
Input voltage low (TXD, SD)V
Input voltage high (TXD, SD)CMOS level*
Input leakage current (TXD, SD) V
Input capacitance, TXD, SDC
Output voltage lowI
Output voltage highI
Output RXD current limitation
high state
low state
In transmit mode, add additional 85 mA (typ) for IRED current.
Add RXD output current depending on RXD load.
SIR modeI
MIR/FIR modeI
CC
CC
I
SD
1.83.0mA
2.03.3mA
0.01µA
T= 25 °C, not ambient light
sensitive, detector is disabled in
shutdown mode
I
SD
1µA
temperature range, not ambient
light sensitive
- 25+ 85°C
- 0.50.5V
VCC - 0.36V
- 1+ 1µA
5pF
0.4
0.9 x V
CC1
20
20
400500600kΩ
200ns
)
= 0.9 x V
in
= 500 µA
OL
C
load
= - 250 µA
OH
C
load
CC1
= 15 pF
= 15 pF
Short to Ground
Short to V
CC1
impedanceR
All modest
(V
CC1
= 3 V). It is recommended to use the specified min/max values to avoid increased operating
CC1
A
IL
V
IH
I
ICH
I
V
OL
V
OH
RXD
SDPW
V
V
mA
mA
Document Number 84763
Rev. 1.3, 06-Dec-06
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311
TFDU6300
Vishay Semiconductors
Optoelectronic Characteristics
Receiver
T
= 25 °C, V
amb
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Minimum irradiance E
angular range**
Minimum irradiance E
angular range, MIR mode
Minimum irradiance E
inangular range, FIR mode
Maximum irradiance E
angular range***
Rise time of output signal10 % to 90 %, C
Fall time of output signal90 % to 10 %, C
RXD pulse width of output
signal, 50 %, SIR mode
RXD pulse width of output
signal, 50 %, MIR mode
RXD pulse width of output
signal, 50 %, FIR mode
RXD pulse width of output
signal, 50 %, FIR mode
Stochastic jitter, leading edge
Receiver start up time
Latencyt
Note: All timing data measured with 4 Mbit/s are measured using the IrDA
after starting the preamble.
*)
IrDA low power specification is 90 mW/m2. Specification takes into account a window loss of 10 %.
**) IrDA sensitivity definition (equivalent to threshold irradiance):
Minimum Irradiance E
ating at the minimum intensity in angular range into the minimum half-angle range at the maximum Link Length.
***) Maximum Irradiance E
at the maximum intensity in angular range at Minimum Link Length must not cause receiver overdrive distortion and possible related link
errors. If placed at the Active Output Interface reference plane of the transmitter, the receiver must meet its bit error ratio (BER) specification.
For more definitions see the document "Symbols and Terminology" on the Vishay Website
(http://www.vishay.com/docs/82512/82512.pdf).
= V
CC1
= 2.4 V to 3.6 V unless otherwise noted.
CC2
ParameterTest ConditionsSymbolMinTy p.MaxUnit
*) in
e
)
in
e
e
in
e
)
9.6 kbit/s to 115.2 kbit/s
λ = 850 nm to 900 nm,
V
= 2.4 V
CC
1.152 Mbit/s
λ = 850 nm to 900 nm,
V
= 2.4 V
CC
4 Mbit/s
λ = 850 nm to 900 nm,
V
= 2.4 V
CC
λ = 850 nm to 900 nmE
= 15 pF
L
= 15 pF
L
t
r (RXD)
t
f (RXD)
Input pulse length
1.4 µs < P
Wopt
< 25 µs
Input pulse length
P
= 217 ns, 1.152 Mbit/s
Wopt
Input pulse length
P
= 125 ns, 4 Mbit/s
Wopt
Input pulse length
P
= 250 ns, 4 Mbit/s
Wopt
Input irradiance = 100 mW/m
2
,
4.0 Mbit/s
1.152 Mbit/s
≤ 115.2 kbit/s
t
t
t
t
E
E
E
PW
PW
PW
PW
e
e
e
e
5
(500)
50
(5)
100
(10)
130
(13)
80
(8)
200
(20)
mW/m2
(µW/cm
mW/m2
(µW/cm
mW/m2
(µW/cm
kW/m2
(mW/cm
1040ns
1040ns
1.62.23µs
105250275ns
105125145ns
225250275ns
25
80
350
ns
ns
ns
After completion of shutdown
programmimg sequence
250µs
Power on dalay
L
®
FIR transmission header. The data given here are valid 5 µs
In Angular Range, power per unit area. The receiver must meet the BER specification while the source is oper-
e
In Angular Range, power per unit area. The optical power delivered to the detector by a source operating
e
40100µs
2
)
2
)
2
)
2
)
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312
Document Number 84763
Rev. 1.3, 06-Dec-06
TFDU6300
Vishay Semiconductors
Transmitter
T
= 25 °C, V
amb
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
IRED operating current, switched
current limiter
Output leakage IRED currentI
Output radiant intensity, s. figure 3,
recommended appl. circuit
Output radiant intensity, s. figure 3,
recommended appl. circuit
Optical output pulse durationInput pulse width t < 100 µs
Optical overshoot25%
*) Maximum value is given by the IrDA-Standard
**) Note: Due to this wavelength restriction compared to the IrDA spec of 850 nm to 900 nm the transmitter is able to operate as source
for the standard Remote Control applications with codes as e.g. Philips RC5/RC6
conditions (125 mW/sr) the RC range to be covered is in the range from 8 m to 12 m, provided that state of the art remote control receivers
are used
= V
CC1
= 2.4 V to 3.6 V unless otherwise noted.
CC2
ParameterTest ConditionsSymbolMinTy p.MaxUnit
Note: No external resistor
I
D
330440600mA
current limiting resistor is
needed
- 11µA
65180500*
50125500*
)
mW/sr
)
mW/sr
= V
V
CC
TXD = High, SD = Low
VCC = V
= 3.3 V, α = 0°
IRED
= 3.3 V, α = 0°, 15°
IRED
IRED
I
e
I
e
TXD = High, SD = Low
= 3.3 V, α = 0°, 15°
CC1
TXD = Low or SD = High
I
e
0.04mW/sr
(Receiver is inactive as long as
SD = High)
α±
)
t
ropt
t
t
λ
fopt
opt
p
,
875886900nm
1040ns
207217227ns
24deg
1.152 Mbit/s
4 Mbit/s
4 Mbit/s
input pulse width t ≥ 100 µs
t
opt
t
opt
t
opt
t
opt
117125133ns
242250258ns
t
20
®
or RECS 80. When operated under IrDA full range
100
µs
µs
Document Number 84763
Rev. 1.3, 06-Dec-06
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313
TFDU6300
Vishay Semiconductors
Recommended Circuit Diagram
Operated at a clean low impedance power supply the
TFDU6300 needs no additional external components.
However, depending on the entire system design and
board layout, additional components may be required
(see figure 3).
V
CC2
V
CC1
GND
SD
TXD
RXD
19307
Figure 3. Recommended Application Circuit
C1
R1
R2
C2
The capacitor C1 is buffering the supply voltage and
eliminates the inductance of the power supply line.
This one should be a Tantalum or other fast capacitor
to guarantee the fast rise time of the IRED current.
The resistor R1 is only necessary for high operating
voltages and elevated temperatures.
Vishay transceivers integrate a sensitive receiver and
a built-in power driver. The combination of both needs
a careful circuit board layout. The use of thin, long,
IRED Anode
V
CC
Ground
SD
TXD
RXD
IRED Cathode
resistive and inductive wiring should be avoided. The
inputs (TXD, SD) and the output RXD should be
directly (DC) coupled to the I/O circuit.
The capacitor C2 combined with the resistor R2 is the
low pass filter for smoothing the supply voltage.
R2, C1 and C2 are optional and dependent on the
quality of the supply voltages V
and injected
CCx
noise. An unstable power supply with dropping voltage during transmission may reduce the sensitivity
(and transmission range) of the transceiver.
The placement of these parts is critical. It is strongly
recommended to position C2 as close as possible to
the transceiver power supply pins. A Tantalum capacitor should be used for C1 while a ceramic capacitor
is used for C2.
In addition, when connecting the described circuit to
the power supply, low impedance wiring should be
used.
When extended wiring is used the inductance of the
power supply can cause dynamically a voltage drop
at V
. Often some power supplies are not able to
CC2
follow the fast current rise time. In that case another
4.7 µF (type, see table under C1) at V
will be help-
CC2
ful.
Keep in mind that basic RF-design rules for circuit
design should be taken into account. Especially
longer signal lines should not be used without termination. See e.g. "The Art of Electronics" Paul Horowitz,
Winfield Hill, 1989, Cambridge University Press,
ISBN: 0521370957.
R1no resistor necessary, the internal controller is able to
control the current
R210 Ω, 0.125 WCRCW-1206-10R0-F-RT1
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314
Document Number 84763
Rev. 1.3, 06-Dec-06
I/O and Software
In the description, already different I/Os are mentioned. Different combinations are tested and the
function verified with the special drivers available
from the I/O suppliers.
I/O
manual, the Vishay application notes, or contact
In special cases refer to the
directly Vishay Sales, Marketing or Application.
Mode Switching
The TFDU6300 is in the SIR mode after power on as
a default mode, therefore the FIR data transfer rate
has to be set by a programming sequence using the
TXD and SD inputs as described below. The low
frequency mode covers speeds up to 115.2 kbit/s.
Signals with higher data rates should be detected in
the high frequency mode. Lower frequency data can
also be received in the high frequency mode but with
reduced sensitivity. To switch the transceivers from
low frequency mode to the high frequency mode and
vice versa, the programming sequences described
below are required.
Setting to the High Bandwidth Mode
(0.576 Mbit/s to 4 Mbit/s)
1. Set SD input to logic "HIGH".
2. Set TXD input to logic "HIGH". Wait t
3. Set SD to logic "LOW" (this negative edge latches
state of TXD, which determines speed setting).
4. After waiting t
≥ 200 ns TXD can be set to logic
h
"LOW". The hold time of TXD is limited by the maximum allowed pulse length.
≥ 200 ns.
s
TFDU6300
Vishay Semiconductors
TXD is now enabled as normal TXD input for the high
bandwidth mode.
Setting to the Lower Bandwidth Mode
(2.4 kbit/s to 115.2 kbit/s)
1. Set SD input to logic "HIGH".
2. Set TXD input to logic "LOW". Wait t
3. Set SD to logic "LOW" (this negative edge latches
state of TXD, which determines speed setting).
4. TXD must be held for t
≥ 200 ns.
h
TXD is now enabled as normal TXD input for the
lower bandwidth mode.
SD
TXD
50 %
Figure 4. Mode Switching Timing Diagram
50 %
t
s
t
h
50 %
≥ 200 ns.
s
Hig h:F IR
Low : SIR
14873
Table 2.
Truth table
InputsOutputs
SDTXD
highxxweakly pulled
lowhighxhighI
lowhigh > 100 µsxhigh0
lowlow< 4high0
lowlow> Min. detection threshold irradiance
lowlow> Max. detection threshold irradiancex0
Document Number 84763
Rev. 1.3, 06-Dec-06
Optical input Irradiance mW/m
< Max. detection threshold irradiance
2
RXDTransmitter
(500 kΩ) to V
low (active)0
CC1
0
e
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315
TFDU6300
260
2...4 °C/s
2...4 °C/s
10 s max. at 230 °C
120 s...180 s
160 °C max.
240 °C max.
90 s max.
30 s max.
2 °C...3 °C/s
2 °C...4 °C/s
90 s...120 s
T ≥ 217 °C for 70 s max
T
peak
= 260 °C
70 s max.
T ≥ 255 °C for 10 s....30 s
Vishay Semiconductors
Recommended Solder Profiles
Solder Profile for Sn/Pb Soldering
240
220
200
180
160
140
120
100
Temperature (°C)
80
60
40
20
0
0 50 100 150 200 250 300 350
19535
Time/s
Figure 5. Recommended Solder Profile for Sn/Pb soldering
Lead (Pb)-Free, Recommended Solder Profile
The TFDU6300 is a lead (Pb)-free transceiver and
qualified for lead (Pb)-free processing. For lead (Pb)free solder paste like Sn (3.0 - 4.0) Ag (0.5 - 0.9) Cu,
there are two standard reflow profiles: Ramp-SoakSpike (RSS) and Ramp-To-Spike (RTS). The RampSoak-Spike profile was developed primarily for reflow
ovens heated by infrared radiation. With widespread
use of forced convection reflow ovens the Ramp-ToSpike profile is used increasingly. Shown below in
figure 6 and 7 are VISHAY's recommended profiles
for use with the TFDU6300 transceivers. For more
details please refer to the application note
“SMD Assembly Instructions”
(http://www.vishay.com/docs/82602/82602.pdf).
A ramp-up rate less than 0.9 °C/s is not recommended. Ramp-up rates faster than 1.3 °C/s could
damage an optical part because the thermal conductivity is less than compared to a standard IC.
Wave Soldering
For TFDUxxxx and TFBSxxxx transceiver devices
wave soldering is not recommended.
Storage
The storage and drying processes for all VISHAY
transceivers (TFDUxxxx and TFBSxxx) are equivalent to MSL4.
The data for the drying procedure is given on labels
on the packing and also in the application note
"Taping, Labeling, Storage and Packing"
(http://www.vishay.com/docs/82601/82601.pdf).
275
250
225
200
175
150
125
100
Temperature/°C
75
50
25
0
0 50 100 150 200 250 300 350
19532
Figure 6. Solder Profile, RSS Recommendation
280
260
240
220
200
180
160
140
120
Temperature/°C
100
80
60
40
20
0
050100150200250300
Figure 7. RTS Recommendation
Time/s
T
= 260 °C max
peak
1.3 °C/s
Time above 217 °C t
Time above 250 °C t ≤ 40 s
Peak temperature T
Time/s
≤
peak
70 s
= 260 °C
< 4 °C/s
< 2 °C/s
Manual Soldering
Manual soldering is the standard method for lab use.
However, for a production process it cannot be recommended because the risk of damage is highly
dependent on the experience of the operator. Nevertheless, we added a chapter to the above mentioned
application note, describing manual soldering and
desoldering.
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316
Document Number 84763
Rev. 1.3, 06-Dec-06
Package Dimensions
TFDU6300 (Universal) Package
TFDU6300
Vishay Semiconductors
19533
Document Number 84763
Rev. 1.3, 06-Dec-06
Figure 8. Package Drawing
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317
TFDU6300
Vishay Semiconductors
Tape and Reel Information
Drawing-No.: 9.800-5090.01-4
Issue: 1; 29.11.05
14017
Figure 9. Reel drawing
Tape WidthA max.NW1 min.W2 max.W3 min.W3 max.
mmmmmmmmmmmmmm
161806016.422.415.919.4
163305016.422.415.919.4
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318
Document Number 84763
Rev. 1.3, 06-Dec-06
Tape Dimensions
TFDU6300
Vishay Semiconductors
Drawing-No.: 9.700-5280.01-4
Issue: 1; 03.11.03
Document Number 84763
Rev. 1.3, 06-Dec-06
19855
Figure 10. Tape drawing, TFDU6300 for top view mounting
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319
TFDU6300
Vishay Semiconductors
Drawing-No.: 9.700-5279.01-4
Issue: 1; 08.12.04
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320
19856
Figure 11. Tape drawing, TFDU6300 for side view mounting
Document Number 84763
Rev. 1.3, 06-Dec-06
TFDU6300
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.