VISHAY TFDU6300 Technical data

TFDU6300
Vishay Semiconductors
Fast Infrared Transceiver Module (FIR, 4 Mbit/s) for 2.4 V to 3.6 V Operation
Description
The TFDU6300 transceiver is an infrared transceiver module compliant to the latest IrDA physical layer low-power standard for fast infrared data communica­tion, supporting IrDA speeds up to 4 Mbit/s (FIR), HP-SIR trol modes up to 2 MHz. Integrated within the trans­ceiver module is a photo PIN diode, an infrared emitter (IRED), and a low-power control IC to provide a total front-end solution in a single package. This new Vishay FIR transceiver is built in a new smaller package using the experiences of the lead frame BabyFace technology. The transceivers are capable of directly interfacing with a wide variety of I/O tion function. At a minimum, a Vcc bypass capacitor is
®
, Sharp ASK® and carrier based remote con-
devices, which perform the modulation/demodula-
20101
the only external component required implementing a complete solution. TFDU6300 has a tri-state output and is floating in shutdown mode with a weak pull-up. An otherwise identical transceiver with low-voltage (1.8 V) logic levels is available as TFDU6301.
Features
• Compliant to the latest IrDA physical layer specification (up to 4 Mbit/s) with an extended low power range of > 70 cm (typ. 1 m) and TV Remote Control (> 9 m)
• Operates from 2.4 V to 3.6 V within specification
• Low power consumption (1.8 mA typ. supply current)
• Power shutdown mode (0.01 µA typ. shutdown current)
• Surface mount package
- Universal (L 8.5 mm x H 2.5 mm x W 3.1 mm)
• Tri-state-receiver output, floating in shut down with a weak pull-up
e3
Applications
• Notebook computers, desktop PCs, Palmtop computers (Win CE, Palm PC), PDAs
• Digital cameras and video cameras
• Printers, fax machines, photocopiers, screen projectors
• Low profile (universal) package capable of surface mount soldering to side and top view orientation
• Directly interfaces with various Super I/O and con­troller devices
• Only one external component required
• Split power supply, transmitter and receiver can be operated from two power supplies with relaxed requirements saving costs
• Lead (Pb)-free device
• Qualified for lead (Pb)-free and Sn/Pb processing (MSL4)
• Device in accordance with RoHS 2002/95/EC and WEEE 2002/96EC
• Telecommunication products (cellular phones, pagers)
• Internet TV boxes, video conferencing systems
• External infrared adapters (dongles)
• Medical and industrial data collection
Parts Table
Part Description Qty/Reel or Tube
TFDU6300-TR3 Oriented in carrier tape for side view surface mounting 2500 pcs
TFDU6300-TT3 Oriented in carrier tape for side view surface mounting 2500 pcs
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Document Number 84763
Rev. 1.3, 06-Dec-06
TFDU6300
Vishay Semiconductors
Functional Block Diagram
V
CC1
Tr i- Stat e Dr iv er
Contro lle d Dr iv er
18468_1
SD
TXD
Am pl if ie r
Co mp ar ator
Lo gi c &
Contro l
GND
Figure 1. Functional Block Diagram
Pin Description
Pin Number Function Description I/O Active
(V
1V
CC2
IRED Anode
IRED anode to be externally connected to V than 3.6 V an external resistor might be necessary for reducing the internal
cc2
power dissipation. This pin is allowed to be supplied from an uncontrolled
power supply separated from the controlled V
2IRED
IRED cathode, internally connected to driver transistor
Cathode
3 TXD This input is used to transmit serial data when SD is low. An on-chip
protection circuit disables the IRED driver if the TXD pin is asserted for
longer than 100 µs. When used in conjunction with the SD pin, this pin is
also used to control the receiver mode. Logic reference: V
4 RXD Received data output, push-pull CMOS driver output capable of driving
standard CMOS. No external pull-up or pull-down resistor is required.
Floating with a weak pull-up of 500 kOhm (typ.) in shutdown mode. High/
Low levels related to V
. RXD echoes the TXD signal.
cc1
5 SD Shutdown, also used for dynamic mode switching. Setting this pin active
places the module into shutdown mode. On the falling edge of this signal,
the state of the TXD pin is sampled and used to set receiver low bandwidth
(TXD = Low: SIR) or high bandwidth (TXD = High: MIR and FIR) mode.
6V
CC1
Supply voltage
7 NC Internally not connected. I
8 GND Ground
). For higher voltages
IRED
- supply.
cc1
cc1
RXD
V
CC2
IHIGH
OLOW
IHIGH
Document Number 84763
Rev. 1.3, 06-Dec-06
TFDU6301 weight 0.075 g
19531
Figure 2. Pinning
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Vishay Semiconductors
Absolute Maximum Ratings
Reference point Pin: GND unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Parameter Test Conditions Symbol Min Ty p. Max Unit
Supply voltage range,
0 V < V
< 6 V V
CC2
CC1
transceiver
Supply voltage range, transmitter
Voltage at all I/O pins V
0 V < V
in
< 6 V V
CC1
< V
is allowed - 0.5 6 V
CC1
CC2
Input currents For all pins, except IRED anode pin 10 mA
Output sinking current 25 mA
Power dissipation P
Junction temperature T
Ambient temperature range (operating)
Storage temperature range T
D
J
T
amb
stg
Soldering temperature See chapter “Recommended
Solder Profiles”
Average output current I
Repetitive pulse output current < 90 µs, t
< 20 % I
on
(DC) 150 mA
IRED
(RP) 700 mA
IRED
ESD protection Human body model 1 kV
Virtual source size Method: (1-1/e) encircled energy d 1.8 2.0 mm
Maximum Intensity for Class 1 IEC60825-1 or EN60825-1,
edition Jan. 2001
I
e
*) Due to the internal limitation measures and the IrDA defined transmission protocol the device is a "class 1" device when operated inside the absolute maximum ratings **) IrDA specifies the maximum intensity with 500 mW/sr
- 0.5 6 V
- 0.5 6.5 V
500 mW
125 °C
- 25 + 85 °C
- 25 + 85 °C
260 °C
*)
(500)
mW/sr
**)
Definitions
:
In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes:
SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhy 1.0
MIR: 576 kbit/s to 1152 kbit/s
FIR: 4 Mbit/s
VFIR: 16 Mbit/s
MIR and FIR were implemented with IrPhy 1.1, followed by IrPhy 1.2, adding the SIR Low Power Standard. IrPhy 1.3 extended the Low
Power Option to MIR and FIR and VFIR was added with IrPhy 1.4. A new version of the standard in any case obsoletes the former version.
With introducing the updated versions the old versions are obsolete. Therefore the only valid IrDA standard is the actual version IrPhy 1.4
(in Oct. 2002).
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Document Number 84763
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TFDU6300
Vishay Semiconductors
Electrical Characteristics
Transceiver
T
= 25 °C, V
amb
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Supply voltage V
Dynamic Supply current Receive mode only, idle
Shutdown supply current SD = High
Shutdown supply current SD = High, full specified
Operating temperature range T
Input voltage low (TXD, SD) V
Input voltage high (TXD, SD) CMOS level*
Input leakage current (TXD, SD) V
Input capacitance, TXD, SD C
Output voltage low I
Output voltage high I
Output RXD current limitation high state low state
SD shutdown pulse duration Activating shutdown 30 µs
RXD to V
CC1
SD mode programming pulse duration
*)
The typical threshold level is 0.5 x V
current.
CC1
= V
= 2.4 V to 3.6 V unless otherwise noted.
CC2
Parameter Test Conditions Symbol Min Ty p. Max Unit
CC
2.4 3.6 V
In transmit mode, add additional 85 mA (typ) for IRED current.
Add RXD output current depending on RXD load.
SIR mode I
MIR/FIR mode I
CC
CC
I
SD
1.8 3.0 mA
2.0 3.3 mA
0.01 µA T= 25 °C, not ambient light sensitive, detector is disabled in shutdown mode
I
SD
A temperature range, not ambient light sensitive
- 25 + 85 °C
- 0.5 0.5 V
VCC - 0.3 6 V
- 1 + 1 µA
5pF
0.4
0.9 x V
CC1
20 20
400 500 600 kΩ
200 ns
)
= 0.9 x V
in
= 500 µA
OL
C
load
= - 250 µA
OH
C
load
CC1
= 15 pF
= 15 pF
Short to Ground Short to V
CC1
impedance R
All modes t
(V
CC1
= 3 V). It is recommended to use the specified min/max values to avoid increased operating
CC1
A
IL
V
IH
I
ICH
I
V
OL
V
OH
RXD
SDPW
V
V
mA mA
Document Number 84763
Rev. 1.3, 06-Dec-06
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TFDU6300
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Optoelectronic Characteristics
Receiver
T
= 25 °C, V
amb
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Minimum irradiance E angular range**
Minimum irradiance E angular range, MIR mode
Minimum irradiance E inangular range, FIR mode
Maximum irradiance E angular range***
Rise time of output signal 10 % to 90 %, C
Fall time of output signal 90 % to 10 %, C
RXD pulse width of output signal, 50 %, SIR mode
RXD pulse width of output signal, 50 %, MIR mode
RXD pulse width of output signal, 50 %, FIR mode
RXD pulse width of output signal, 50 %, FIR mode
Stochastic jitter, leading edge
Receiver start up time
Latency t
Note: All timing data measured with 4 Mbit/s are measured using the IrDA after starting the preamble.
*)
IrDA low power specification is 90 mW/m2. Specification takes into account a window loss of 10 %.
**) IrDA sensitivity definition (equivalent to threshold irradiance):
Minimum Irradiance E
ating at the minimum intensity in angular range into the minimum half-angle range at the maximum Link Length.
***) Maximum Irradiance E at the maximum intensity in angular range at Minimum Link Length must not cause receiver overdrive distortion and possible related link errors. If placed at the Active Output Interface reference plane of the transmitter, the receiver must meet its bit error ratio (BER) specifi­cation.
For more definitions see the document "Symbols and Terminology" on the Vishay Website (http://www.vishay.com/docs/82512/82512.pdf).
= V
CC1
= 2.4 V to 3.6 V unless otherwise noted.
CC2
Parameter Test Conditions Symbol Min Ty p. Max Unit
*) in
e
)
in
e
e
in
e
)
9.6 kbit/s to 115.2 kbit/s λ = 850 nm to 900 nm, V
= 2.4 V
CC
1.152 Mbit/s λ = 850 nm to 900 nm, V
= 2.4 V
CC
4 Mbit/s λ = 850 nm to 900 nm, V
= 2.4 V
CC
λ = 850 nm to 900 nm E
= 15 pF
L
= 15 pF
L
t
r (RXD)
t
f (RXD)
Input pulse length
1.4 µs < P
Wopt
< 25 µs
Input pulse length P
= 217 ns, 1.152 Mbit/s
Wopt
Input pulse length P
= 125 ns, 4 Mbit/s
Wopt
Input pulse length P
= 250 ns, 4 Mbit/s
Wopt
Input irradiance = 100 mW/m
2
,
4.0 Mbit/s
1.152 Mbit/s 115.2 kbit/s
t
t
t
t
E
E
E
PW
PW
PW
PW
e
e
e
e
5
(500)
50 (5)
100 (10)
130 (13)
80 (8)
200 (20)
mW/m2
(µW/cm
mW/m2
(µW/cm
mW/m2
(µW/cm
kW/m2
(mW/cm
10 40 ns
10 40 ns
1.6 2.2 3 µs
105 250 275 ns
105 125 145 ns
225 250 275 ns
25 80
350
ns ns ns
After completion of shutdown programmimg sequence
250 µs
Power on dalay
L
®
FIR transmission header. The data given here are valid 5 µs
In Angular Range, power per unit area. The receiver must meet the BER specification while the source is oper-
e
In Angular Range, power per unit area. The optical power delivered to the detector by a source operating
e
40 100 µs
2
)
2
)
2
)
2
)
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Document Number 84763
Rev. 1.3, 06-Dec-06
TFDU6300
Vishay Semiconductors
Transmitter
T
= 25 °C, V
amb
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
IRED operating current, switched current limiter
Output leakage IRED current I
Output radiant intensity, s. figure 3, recommended appl. circuit
Output radiant intensity, s. figure 3, recommended appl. circuit
Output radiant intensity V
Output radiant intensity, Angle of Half Intensity
Peak - emission wavelength**
Spectral bandwidth Δλ 45 nm
Optical rise time, Optical fall time
Optical output pulse duration Input pulse width 217 ns,
Optical output pulse duration Input pulse width 125 ns,
Optical output pulse duration Input pulse width 250 ns,
Optical output pulse duration Input pulse width t < 100 µs
Optical overshoot 25 %
*) Maximum value is given by the IrDA-Standard
**) Note: Due to this wavelength restriction compared to the IrDA spec of 850 nm to 900 nm the transmitter is able to operate as source for the standard Remote Control applications with codes as e.g. Philips RC5/RC6 conditions (125 mW/sr) the RC range to be covered is in the range from 8 m to 12 m, provided that state of the art remote control receivers are used
= V
CC1
= 2.4 V to 3.6 V unless otherwise noted.
CC2
Parameter Test Conditions Symbol Min Ty p. Max Unit
Note: No external resistor
I
D
330 440 600 mA current limiting resistor is needed
- 1 1 µA
65 180 500*
50 125 500*
)
mW/sr
)
mW/sr
= V
V
CC
TXD = High, SD = Low
VCC = V
= 3.3 V, α = 0°
IRED
= 3.3 V, α = 0°, 15°
IRED
IRED
I
e
I
e
TXD = High, SD = Low
= 3.3 V, α = 0°, 15°
CC1
TXD = Low or SD = High
I
e
0.04 mW/sr
(Receiver is inactive as long as SD = High)
α±
)
t
ropt
t
t
λ
fopt
opt
p
,
875 886 900 nm
10 40 ns
207 217 227 ns
24 deg
1.152 Mbit/s
4 Mbit/s
4 Mbit/s
input pulse width t 100 µs
t
opt
t
opt
t
opt
t
opt
117 125 133 ns
242 250 258 ns
t
20
®
or RECS 80. When operated under IrDA full range
100
µs µs
Document Number 84763
Rev. 1.3, 06-Dec-06
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TFDU6300
Vishay Semiconductors
Recommended Circuit Diagram
Operated at a clean low impedance power supply the TFDU6300 needs no additional external components. However, depending on the entire system design and board layout, additional components may be required (see figure 3).
V
CC2
V
CC1
GND
SD
TXD
RXD
19307
Figure 3. Recommended Application Circuit
C1
R1
R2
C2
The capacitor C1 is buffering the supply voltage and eliminates the inductance of the power supply line. This one should be a Tantalum or other fast capacitor to guarantee the fast rise time of the IRED current. The resistor R1 is only necessary for high operating voltages and elevated temperatures. Vishay transceivers integrate a sensitive receiver and a built-in power driver. The combination of both needs a careful circuit board layout. The use of thin, long,
IRED Anode
V
CC
Ground
SD
TXD
RXD
IRED Cathode
resistive and inductive wiring should be avoided. The inputs (TXD, SD) and the output RXD should be directly (DC) coupled to the I/O circuit.
The capacitor C2 combined with the resistor R2 is the low pass filter for smoothing the supply voltage. R2, C1 and C2 are optional and dependent on the quality of the supply voltages V
and injected
CCx
noise. An unstable power supply with dropping volt­age during transmission may reduce the sensitivity (and transmission range) of the transceiver. The placement of these parts is critical. It is strongly recommended to position C2 as close as possible to the transceiver power supply pins. A Tantalum capac­itor should be used for C1 while a ceramic capacitor is used for C2.
In addition, when connecting the described circuit to the power supply, low impedance wiring should be used.
When extended wiring is used the inductance of the power supply can cause dynamically a voltage drop at V
. Often some power supplies are not able to
CC2
follow the fast current rise time. In that case another
4.7 µF (type, see table under C1) at V
will be help-
CC2
ful. Keep in mind that basic RF-design rules for circuit
design should be taken into account. Especially longer signal lines should not be used without termina­tion. See e.g. "The Art of Electronics" Paul Horowitz, Winfield Hill, 1989, Cambridge University Press, ISBN: 0521370957.
Table 1. Recommended Application Circuit Components
Component Recommended Value Vishay Part Number
C1 4.7 µF, 16 V 293D 475X9 016B
C2 0.1 µF, Ceramic VJ 1206 Y 104 J XXMT
R1 no resistor necessary, the internal controller is able to
control the current
R2 10 Ω, 0.125 W CRCW-1206-10R0-F-RT1
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Document Number 84763
Rev. 1.3, 06-Dec-06
I/O and Software
In the description, already different I/Os are men­tioned. Different combinations are tested and the function verified with the special drivers available from the I/O suppliers. I/O
manual, the Vishay application notes, or contact
In special cases refer to the
directly Vishay Sales, Marketing or Application.
Mode Switching
The TFDU6300 is in the SIR mode after power on as a default mode, therefore the FIR data transfer rate has to be set by a programming sequence using the TXD and SD inputs as described below. The low frequency mode covers speeds up to 115.2 kbit/s. Signals with higher data rates should be detected in the high frequency mode. Lower frequency data can also be received in the high frequency mode but with reduced sensitivity. To switch the transceivers from low frequency mode to the high frequency mode and vice versa, the programming sequences described below are required.
Setting to the High Bandwidth Mode (0.576 Mbit/s to 4 Mbit/s)
1. Set SD input to logic "HIGH".
2. Set TXD input to logic "HIGH". Wait t
3. Set SD to logic "LOW" (this negative edge latches state of TXD, which determines speed setting).
4. After waiting t
200 ns TXD can be set to logic
h
"LOW". The hold time of TXD is limited by the maxi­mum allowed pulse length.
200 ns.
s
TFDU6300
Vishay Semiconductors
TXD is now enabled as normal TXD input for the high bandwidth mode.
Setting to the Lower Bandwidth Mode (2.4 kbit/s to 115.2 kbit/s)
1. Set SD input to logic "HIGH".
2. Set TXD input to logic "LOW". Wait t
3. Set SD to logic "LOW" (this negative edge latches state of TXD, which determines speed setting).
4. TXD must be held for t
200 ns.
h
TXD is now enabled as normal TXD input for the lower bandwidth mode.
SD
TXD
50 %
Figure 4. Mode Switching Timing Diagram
50 %
t
s
t
h
50 %
200 ns.
s
Hig h:F IR
Low : SIR
14873
Table 2. Truth table
Inputs Outputs
SD TXD
high x x weakly pulled
low high x high I
low high > 100 µs x high 0
low low < 4 high 0
low low > Min. detection threshold irradiance
low low > Max. detection threshold irradiance x 0
Document Number 84763
Rev. 1.3, 06-Dec-06
Optical input Irradiance mW/m
< Max. detection threshold irradiance
2
RXD Transmitter
(500 kΩ) to V
low (active) 0
CC1
0
e
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TFDU6300
260
2...4 °C/s
2...4 °C/s
10 s max. at 230 °C
120 s...180 s
160 °C max.
240 °C max.
90 s max.
30 s max.
2 °C...3 °C/s
2 °C...4 °C/s
90 s...120 s
T ≥ 217 °C for 70 s max
T
peak
= 260 °C
70 s max.
T ≥ 255 °C for 10 s....30 s
Vishay Semiconductors
Recommended Solder Profiles
Solder Profile for Sn/Pb Soldering
240
220
200
180
160
140
120
100
Temperature (°C)
80
60
40
20
0
0 50 100 150 200 250 300 350
19535
Time/s
Figure 5. Recommended Solder Profile for Sn/Pb soldering
Lead (Pb)-Free, Recommended Solder Profile
The TFDU6300 is a lead (Pb)-free transceiver and qualified for lead (Pb)-free processing. For lead (Pb)­free solder paste like Sn (3.0 - 4.0) Ag (0.5 - 0.9) Cu, there are two standard reflow profiles: Ramp-Soak­Spike (RSS) and Ramp-To-Spike (RTS). The Ramp­Soak-Spike profile was developed primarily for reflow ovens heated by infrared radiation. With widespread use of forced convection reflow ovens the Ramp-To­Spike profile is used increasingly. Shown below in figure 6 and 7 are VISHAY's recommended profiles for use with the TFDU6300 transceivers. For more details please refer to the application note “SMD Assembly Instructions” (http://www.vishay.com/docs/82602/82602.pdf).
A ramp-up rate less than 0.9 °C/s is not recom­mended. Ramp-up rates faster than 1.3 °C/s could damage an optical part because the thermal conduc­tivity is less than compared to a standard IC.
Wave Soldering
For TFDUxxxx and TFBSxxxx transceiver devices wave soldering is not recommended.
Storage
The storage and drying processes for all VISHAY transceivers (TFDUxxxx and TFBSxxx) are equiva­lent to MSL4. The data for the drying procedure is given on labels on the packing and also in the application note "Taping, Labeling, Storage and Packing" (http://www.vishay.com/docs/82601/82601.pdf).
275
250
225
200
175
150
125
100
Temperature/°C
75
50
25
0
0 50 100 150 200 250 300 350
19532
Figure 6. Solder Profile, RSS Recommendation
280
260
240
220
200
180
160
140
120
Temperature/°C
100
80
60
40
20
0
0 50 100 150 200 250 300
Figure 7. RTS Recommendation
Time/s
T
= 260 °C max
peak
1.3 °C/s
Time above 217 °C t Time above 250 °C t ≤ 40 s Peak temperature T
Time/s
peak
70 s
= 260 °C
< 4 °C/s
< 2 °C/s
Manual Soldering
Manual soldering is the standard method for lab use. However, for a production process it cannot be rec­ommended because the risk of damage is highly dependent on the experience of the operator. Never­theless, we added a chapter to the above mentioned application note, describing manual soldering and desoldering.
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Document Number 84763
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Package Dimensions
TFDU6300 (Universal) Package
TFDU6300
Vishay Semiconductors
19533
Document Number 84763
Rev. 1.3, 06-Dec-06
Figure 8. Package Drawing
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TFDU6300
Vishay Semiconductors
Tape and Reel Information
Drawing-No.: 9.800-5090.01-4 Issue: 1; 29.11.05
14017
Figure 9. Reel drawing
Tape Width A max. N W1 min. W2 max. W3 min. W3 max.
mm mm mm mm mm mm mm
16 180 60 16.4 22.4 15.9 19.4
16 330 50 16.4 22.4 15.9 19.4
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Document Number 84763
Rev. 1.3, 06-Dec-06
Tape Dimensions
TFDU6300
Vishay Semiconductors
Drawing-No.: 9.700-5280.01-4 Issue: 1; 03.11.03
Document Number 84763
Rev. 1.3, 06-Dec-06
19855
Figure 10. Tape drawing, TFDU6300 for top view mounting
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TFDU6300
Vishay Semiconductors
Drawing-No.: 9.700-5279.01-4 Issue: 1; 08.12.04
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320
19856
Figure 11. Tape drawing, TFDU6300 for side view mounting
Document Number 84763
Rev. 1.3, 06-Dec-06
TFDU6300
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 84763
Rev. 1.3, 06-Dec-06
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321
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com Revision: 08-Apr-05 1
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