VISHAY TFDU4202 Technical data

TFDU4202

Vishay Semiconductors

Integrated Low Profile Transceiver Module for Telecom
Applications - IrDA Standard

Description

The miniaturized TFDU4202 is an ideal transceiver
for applications in telecommunications like mobile
phones and pagers. The device is mechanically
designed for lowest profile with a height of only

2.8 mm. The infrared transceiver is compatible to the
latest IrDA
115 kbit/s. At lower operating voltages up to 3.3 V the
transceiver can be operated without external current
limiting resistor to achieve a range > 1 m.
The added feature is a split power supply for IRED
driver (V

For operating only in the limited distance, low power
range (20 cm/ 30 cm), TFDU4201 with built-in current
control is recommended. For this device see the
appropriate data sheet.

®

IrPHY specification up to a data rate of

) and ASIC (V

ccp

ccp

).

18170

Features

• Package dimension microFace
TFDU4202:
L 7.1 mm x W 4.7 mm x H 2.8 mm

• Compatible to latest IrDA IrPHY standard

• CIR Remote Control operation:
Typical transmission range 8 m using standard
RC-receivers. Receives RC-commands with
typical specified sensitivity.

• SMD Side View

• Lowest power consumption 65 µA, receive mode,

0.01 µA Shutdown

• Built-in current limitation

• Output intensity adjustable by external resistor

• Wide supply voltage range (2.4 V to 5.5 V)

• Split power supply

e3

Applications

• Mobile Phones

• Pagers

• Personal Digital Assistants (PDA)

• Handheld Battery Operated Equipment

• Operational down to 2.0 V

• Fewest external components

• Eye safety: Double safety
Measures:
Limited optical output oulse duration
Limited optical output intensity
IEC60825-1, 2001: Class 1

• Push-pull output (RXD)

• High EMI immunity

• Split power supply, transmitter and receiver can be
operated from two power supplies with relaxed
requirements saving costs, US Patent No.
6,157,476

• Lead (Pb)-free device

• Device in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC

Parts Table

Par t Description Qty / Reel

TFDU4202-TR1 Orientated in carrier tape for side view in mounting 750 pcs

TFDU4202-TR3 Orientated in carrier tape for side view in mounting 2250 pcs

Document Number 82541
Rev. 1.8, 05-Dec-05

www.vishay.com

1

TFDU4202

Vishay Semiconductors

Functional Block Diagram

TXD

Amplifier

Control

Logic

Comparator

Control

Tri-State-Driver

Controlled Driver

RXD

V

ccp

18190

V

CC

GND

Pin Description

Pin Number Function Description I/O Active

1 IRED GND IRED cathode, ground
2 IRED GND IRED cathode, ground
3 RXD Output, received data, push-pull output O low
4V

5 GND Ground
6 GND Ground
7 TXD Input, transmit data I high
8

*)

VCC is allowed to be switched off for standby with V

CCP

*)

V

CC

IRED supply voltage

Power supply voltage I high

applied.

ccp

Pinout

TFDU4202
weight 100 mg

18228

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Document Number 82541

Rev. 1.8, 05-Dec-05

TFDU4202

Vishay Semiconductors

Absolute Maximum Ratings

Reference Point Pin 8, unless otherwise noted.

Parameter Test Conditions Symbol Min Ty p. Max Unit

Supply voltage range V

CC

V

ccp

Input current all pins 10 mA
Output sink current 25 mA
Power dissipation P

Junction temperature T

Ambient temperature range

tot

J

T

amb

(operating)
Storage temperature range T

stg

Soldering temperature see the chapter “Soldering

conditions” for lead-bearing and
Pb-free processing

Average IRED current I

Repetitive pulsed IRED current < 90µs, t

< 20 % I

on

Transmitter data input voltage V

Receiver data output voltage V

IRED(DC)

IRED(RP)

TXD

RXD

- 0.5 6 V

- 0.5 6 V

200 mW

125 °C

- 25 85 °C

- 40 100 °C

260 °C

125 mA

500 mA

- 0.5 6 V

- 0.5 6 V

Eye safety information

Parameter Test Conditions Symbol Min Ty p. Max Unit

Virtual source size Method: (1 - 1/e) encircled

d2mm

energy

Compatible to Class 1 operation of IEC 60825 or EN60825 with worst case IrDA SIR pulse pattern, 115.2 kbit/s

Electrical Characteristics

Transceiver

Tested for the following parameters (VCC = 2.4 V to 5.5 V, - 25 °C to + 85 °C, unless otherwise stated).

Parameter Test Conditions Symbol Min Ty p. Max Unit
Supported data rates base band 9.6 115.2 kbit/s
Supply voltage range operational down to 2.0 V V

Supply current V

= 2.4 V to 5.5 V, Ee = 0,

CC

receive mode, full temperature
range

= 2.4 V to 5.5 V, 10 klx

V

CC

sunlight, receive mode, full
temperature range, no signal

V

CC

= 2.7 V, V

= 2.7 V,

ccp

115.2 kbit/s transmission,
receive mode,
nose to nose operation

Supply current at V

ccp

shutdown mode, entire
temperature range 20 °C

= 0 V, entire temperature

V

CC

I

Sshdown

I

Sshdown

range 20 °C

IRED peak current transmitting I

= 40 mW/sr, no external

e

resistor V

= 2.7 V, SIR

ccp

standard

Transceiver ‘power on‘ settling
time

time from switching on V

CC

to

established specified operation

CC

I

S

I

S

I

S

I

Str

2.4 5.5 V

65 100 µA

70 100 µA

1mA

0.02 1 µA

10 nA

360 mA

1ms

Document Number 82541
Rev. 1.8, 05-Dec-05

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TFDU4202

Vishay Semiconductors

Optoelectronic Characteristics

Receiver

Tested for the following parameters (VCC = 2.4 V to 5.5 V, - 25 °C to + 85 °C, unless otherwise stated).

Parameter Test Conditions Symbol Min Ty p . Max Unit

Minimum detection threshold
irradiance (logic high receiver

| α | ≤ ± 15 °,
V

= 2.4 V to 5.5 V

CC

input irradiance)

2.0 V, 25 °C tested E

Maximum detection threshold

| α | ≤ ± 90 °, VCC = 5 V E

irradiance

| α | ≤ ± 90 °, V

= 3 V E

CC

Logic low receiver input
irradiance

Output voltage RXD active, C = 15 pF V

non active, C = 15 pF V

Output current RXD V

< 0.5 V 4 mA

OL

Rise time at load C = 15 pF, R = 2.2 kΩ t

Fall time at load C = 15 pF, R = 2.2 kΩ t

RXD signal electrical output
pulse width

2.4 kbit/s, input pulse width

1.41 µs to 3/16 of bit duration

115.2 kbit/s, input pulse width

1.41 µs to 3/16 of bit duration

Output delay time (RXD),
leading edge optical input to
electrical output

Jitter, leading edge of output
signal

Output delay time (RXD), trailing
edge optical input to electrical
output

output level =

0.5 x V

@ 40 mW/m

CC

over a period of 10 bit,

115.2 kbit/s
output level =

0.5 x V

@ 40 mW/m

CC

2

2

Power on time, SD recovery
time

Latency t

E

e, min

e, min

e, max

e, max

E

e, max,low

E

e, max,low

OL

OH

t

t

t

dl

t

t

dt

3300
(330)

8000
(800)

00.5V

VCC - 0.5 V

r

f

p

p

j

L

20 70 ns

20 70 ns

1.41 20 µs

1.41 4.5 µs

25

(2.5)

50 100

5000

(500)

15000
(1500)

50
(5)

4

(0.4)

mW/m

(µW/cm

mW/m

W/m

(mW/cm

W/m

(mW/cm

mW/m

(µW/cm

µW/m

2

2

)

2

2

2

)

2

2

)

2

2

)

2

12µs

400 ns

6.5 µs

0.1 1 ms

100 200 µs

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Document Number 82541

Rev. 1.8, 05-Dec-05