VISHAY TFDU6102E, TFDS6402, TFDS6502E, TFDT6502E Technical data

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TFDU6102E/TFDS6402/TFDS6502E/TFDT6502E

Fast Infrared Transceiver Module Family
(FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation

Description

The TFDU6102E, TFDS6402, TFDS6502E,
TFDT6502E are a family of low–power infrared
transceiver modules compliant to the IrDA physical
layer standard for fast infrared data communication,
supporting IrDA speeds up to 4.0 Mbit/s (FIR),
HP-SIR, Sharp ASK and carrier based remote control
modes up to 2 MHz. Integrated within the transceiver
modules are a photo PIN diode, an infrared emitter
(IRED), and a low–power CMOS control IC to provide
a total front–end solution in a single package.

Vishay Telefunken’s FIR transceivers are available in
four package options, including our Baby Face
package (TFDU610xE), the standard setting, once

smallest FIR transceiver available on the market. This
wide selection provides flexibility for a variety of
applications and space constraints. The transceivers
are capable of directly interfacing with a wide variety
of I/O devices which perform the modulation/
demodulation function, including National
Semiconductor’s PC87338, PC87108 and PC87109,
SMC’s FDC37C669, FDC37N769 and CAM35C44,
and Hitachi’s SH3. At a minimum, a current–limiting
resistor in series with the infrared emitter and a
VCC bypass capacitor are the only external
components required implementing a complete
solution.

Vishay Semiconductor

Features

 Compliant to the IrDA physical layer specification

(Up to 4 Mbit/s),
HP–SIR, Sharp ASK and TV Remote Control

 For 3.0 V and 5.0 V Applications
 Operates from 2.6 V to 5.5 V within specification,

operational down to 2.4 V

 Low Power Consumption (3 mA Supply Current)
 Power Shutdown Mode (1 A Shutdown Current)
 Four Surface Mount Package Options

– Universal (9.7 × 4.7 × 4.0 mm)
– Side View (13.0 × 5.95 × 5.3 mm)
– Top View (13.0 × 7.6 × 5.95 mm)
– Dracula (11.2 × 5.6 × 2.2 mm)

 Push-Pull-Receiver Output, grounded in

shutdown mode

Applications

 Notebook Computers, Desktop PCs,

Palmtop Computers (Win CE, Palm PC), PDAs

 Digital Still and Video Cameras
 Printers, Fax Machines, Photocopiers,

Screen Projectors

 High Efficiency Emitter
 Baby Face (Universal) Package Capable of

Surface Mount Soldering to Side and Top View
Orientation

 Directly Interfaces with Various Super I/O and

Controller Devices

 Built–In EMI Protection – No External Shielding

Necessary

 Few External Components Required
 Backward Pin to Pin Compatible to all Vishay

Telefunken SIR and FIR Infrared Transceivers

 Split power supply , transmitter and receiver can be

operated from two power supplies with relaxed
requirements, thus saving costs

 Telecommunication Products

(Cellular Phones, Pagers)

 Internet TV Boxes, Video Conferencing Systems
 External Infrared Adapters (Dongles)
 Medical and Industrial Data Collection Devices

Document Number 82526
Rev. B1.6, 02–Nov–00 1

www.vishay.com

TFDU6102E/TFDS6402/TFDS6502E/TFDT6502E

Vishay Semiconductor

Package Options

TFDU6102E

Baby Face (Universal)

weight 0.20 g

TFDS6402

Dracula Side View

weight 0.30 g

TFDS6502E

Side View

weight 0.39 g

TFDT6502E

Top View

weight 0.39 g

Ordering Information

Part Number Qty / Reel Description
TFDU6102E–TR3 1000 pcs Oriented in carrier tape for side view surface mounting
TFDU6102E–TT3 1000 pcs Oriented in carrier tape for top view surface mounting
TFDS6402–TR3 1000 pcs Side View
TFDS6502E–TR3 750 pcs Side View
TFDT6502E–TR3 750 pcs Top View

Functional Block Diagram

Amplifier

SD/Mode

Txd

AGC
Logic

Open Drain Driver

V

CC

Comparator

GND

Figure 1. Functional Block Diagram

Driver

Rxd

IRED Anode

IRED Cathode

www.vishay.com Document Number 82526

Rev. B1.6, 02–Nov–002

TFDU6102E/TFDS6402/TFDS6502E/TFDT6502E

Function

Descri tion

I/O

Active

Pin Description

Pin Number Function Description I/O Active

“U” and “T” Option “S” Option

1 8 IRED Anode IRED anode, to be externally connected

2 1 IRED Cathode IRED cathode, internally connected to

3 7 Txd Transmit Data Input I HIGH
4 2 Rxd Received Data Output, push-pull CMOS

5 6 SD/Mode Shutdown/ Mode I HIGH
6 3 V
7 5 Mode HIGH: High speed mode;

8 4 GND Ground

CC

Vishay Semiconductor

to V

through a current control resistor.

CC

This pin is allowed to be supplied from
an uncontrolled power supply separated
from the controlled V

driver transistor

driver output capable of driving a stan­dard CMOS or TTL load. No external
pull-up or pull-down resistor is required.

Pin is floating when
device is in shutdown mode

Supply Voltage

LOW: Low speed mode, SIR only
(see chapter “Mode Switching”)

supply

CC

O LOW

I

“U” Option Baby Face (Universal)

and Dracula

IRED Detector

14885

“S” Option Side View “T” Option Top View

IRED Detector

IRED Detector

Figure 2. Pinnings

Document Number 82526
Rev. B1.6, 02–Nov–00 3

www.vishay.com

TFDU6102E/TFDS6402/TFDS6502E/TFDT6502E

Vishay Semiconductor

Absolute Maximum Ratings

Reference point Pin: GND unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Parameters Test Conditions Symbol Min. Typ. Max. Unit

Supply Voltage Range,
Transceiver

Supply Voltage Range,
Transmitter

Input Currents For all Pins, Except IRED

Output Sinking Current 25 mA
Power Dissipation See Derating Curve P
Junction Temperature T
Ambient Temperature

Range (Operating)
Storage Temperature

Range
Soldering Temperature See Recommended Solder

Average Output Current I
Repetitive Pulsed Output

Current
IRED Anode Voltage V
Transmitter Data Input

Voltage
Receiver Data Output

Voltage
Virtual Source Size Method:

Maximum Intensity for
Class 1 Operation of
IEC825–1 or EN60825–1
(worst case IrDA FIR
pulse pattern)

0 V <V

0 V <V

<6 V V

CC2

<6 V V

CC1

Anode Pin

Profile (see Figure 11)

<90 µs, ton <20% I

(1–1/e) encircled energy
EN60825, 1997,

unidirectional operation,
worst case test mode

CC1

CC2

– 0.5 6 V

– 0.5 6 V

10 mA

350 mW
125 °C

T

amb

T

stg

D

J

–25 +85 °C

–25 +85 °C

240 °C

(DC) 130 mA

IRED

(RP) 600 mA

IRED

IREDA

V

Txd

V

Rxd

– 0.5 6 V
– 0.5 V

– 0.5 V

+0.5 V

CC1

+0.5 V

CC1

d 2.5 2.8 mm

320 mW/sr

www.vishay.com Document Number 82526

Rev. B1.6, 02–Nov–004

TFDU6102E/TFDS6402/TFDS6502E/TFDT6502E

Mode Floating,
In ut Voltage High

Vishay Semiconductor

Electrical Characteristics

T

= 25_C, VCC = 2.6V to 5.5 V unless otherwise noted.

amb

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Parameters Test Conditions / Pins Symbol Min. Typ. Max. Unit

Transceiver

Supply Voltage V
Dynamic Supply Current Receive mode only.

In transmit mode, add additional 85 mA (typ) for IRED current
SD = Low, Ee = 0 klx I
SD = Low, Ee = 1 klx *) I

Standby Supply Current SD = High,

Mode = Floating,

I

T = 25°C, Ee = 0 klx
T = 25°C, Ee = 1 klx *)

SD = High, T = 85°C,

I
Mode = Floating,
Not Ambient Light
Sensitive

Operating Temperature

T

Range
Output Voltage Low R

Output Voltage High R

Input Voltage Low

load

C

load
load

C

load

= 2.2 kW,
= 15 pF

= 2.2 kW,
= 15 pF

V

V

V

(Txd, SD/ Mode, Mode)
Input Voltage High CMOS level **) V

(Txd, SD/ Mode, Mode)

TTL level, VCC ≥ 4.5 V V

Input Leakage Current
(Txd, SD/ Mode)

Input Leakage Current,
Mode

Input Capacitance C

CC

CC
CC
SD

SD

OL

OH

I

I

A

IL

IH
IH
L

L

I

2.6 5.5 V

3 4.5 mA
3 4.5 mA

–25 +85 °C

0.5 0.8 V

VCC–0.5 V

0 0.8 V

0.9 x V

CC

2.4 V

–10 +10 µA

–80 +80 µA

1

1.5
5 µA

5 pF

µA
µA

V

*) Standard Illuminant A
**) The typical threshold level is between 0.5 x V

Document Number 82526
Rev. B1.6, 02–Nov–00 5

(VCC = 3 V) and 0.4 x VCC (VCC = 5.5 V) .

CC/2

It is recommended to use the specified min/ max values to avoid increased operating current.

www.vishay.com

TFDU6102E/TFDS6402/TFDS6502E/TFDT6502E

SIR Mode

MIR Mode

FIR Mode
Rxd Pulse Width of

O

50%

Vishay Semiconductor

Optoelectronic Characteristics

T

= 25_C, VCC = 2.6 V to 5.5 V unless otherwise noted.

amb

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Parameters Test Conditions Symbol Min. Typ. Max. Unit

Receiver

Minimum Detection
Threshold Irradiance,
SIR Mode

Minimum Detection
Threshold Irradiance,
MIR Mode

Minimum Detection
Threshold Irradiance,
FIR Mode

Maximum Detection
Threshold Irradiance

Logic LOW Receiver
Input Irradiance

Rise Time of Output
Signal––,,,,klll

Fall Time of Output
Signal

Rxd Pulse Width of Input pulse length 20 µs, 9.6 kbit/s t
Output Signal, 50%
SIR Mode

Rxd Pulse Width of
Output Signal, 50%
MIR Mode

Rxd Pulse Width ofpInput pulse length 125 ns, 4.0 Mbit/s t

utput Signal,

FIR Mode
Stochastic Jitter,

Leading Edge,
FIR Mode

Latency t

TFDS6502E/ TFDT6502E

9.6 kbit/s to 115.2 kbit/s
l = 850 nm to 900 nm

TFDU6102E, TFDS6402

9.6 kbit/s to 115.2 kbit/s
l = 850 nm to 900 nm

TFDS6502E/ TFDT6502E

1.152 Mbit/s
l = 850 nm to 900 nm

TFDU6102E, TFDS6402

1.152 Mbit/s
l = 850 nm to 900 nm

TFDS6502E/ TFDT6502E

4.0 Mbit/s
l = 850 nm to 900 nm

TFDU6102E, TFDS6402

4.0 Mbit/s

l = 850 nm to 900 nm
l = 850 nm to 900 nm E

10% to 90%, @2.2 kΩ, 15 pF t

90% to 10%, @2.2 kΩ, 15 pF t

Input pulse length 1.41 ms,

r (Rxd)

f (Rxd)

t

115.2 kbit/s
Input pulse length 217 ns,

t

1.152 Mbit/s

Input pulse length 250 ns, 4.0 Mbit/s t
Input Irradiance = 100 mW/m2,

4.0 Mbit/s

E

E

E

E

E

E

E

PW
PW

PW

PW
PW

e

e

e

e

e

e

e

e

5 10 kW/m

4 mW/m

20 35 mW/m

25 40 mW/m

50 mW/m

65 mW/m

65 100 mW/m

85 100 mW/m

10 40 ns

10 40 ns

1.2 10 20 µs

1.2 1/2 bit
length

110 260 ns

100 160 ns
200 290 ns

±10 ns

L

120 300 µs

2

2

2

2

2

2

2

2

µs

www.vishay.com Document Number 82526

Rev. B1.6, 02–Nov–006