VISHAY TFBS6711 Technical data

TFBS6711

Vishay Semiconductors

Low Profile Fast Infrared Transceiver (FIR, 4 Mbit/s)
for IrDA

Description

The TFBS6711 is the smallest FIR transceiver avai­lable. It is a low profile and low-power IrDA trans­ceiver. Compliant to IrDA’s Physical Layer specifica­tion, the TFBS6711 supports data transmission rates
from 9.6 kbit/s to 4 Mbit/s with a typical link distance
of 50 cm. It also enables mobile phones and PDAs to
function as universal remote controls for televisions,
DVDs and other home appliances. The TFBS6711
emitter covers a range of 6.5 meters with common
remote control receivers. Integrated within the trans­ceiver module is a PIN photodiode, an infrared emit­ter, and a low-power control IC. The TFBS6711 can
be completely shutdown, achieving very low power
consumption. The TFBS6711 has an I/O voltage

®

Applications

related to the supply voltage while TFBS6712 sup­ports low voltage logic of 1.8 V allowing direct connec­tion to a microcontroller’s I/Os operating at 1.8 V.

20208

Features

• Lowest profile: 1.9 mm

• Smallest footprint: 6.0 mm x 3.05 mm

• Surface mount package

• IrDA transmit distance: 50 cm typical

• Best Remote Control distance:

• Fast data rates: from 9.6 kbit/s to 4 Mbit/s

• Low shutdown current: 0.01 µA

• Operating Voltage: 2.4 V to 3.6 V

• Reduced pin count: 6 pins

• I/O voltage equal to the supply voltage

• Pin compatibility: TFBS4711 and TFBS5711

• Integrated EMI Protection
required

≥ 6.5 m on-axis

− no external shield

e4

•IEC 60825-1 Class 1, Eye Safe

• Qualified for Lead (Pb)-free and Sn/Pb processing

• Compliant to IrDA Physical Layer Specification

• Split power supply, transmitter and receiver can be
operated from two power supplies with relaxed
requirements saving costs, US patent
No. 6,157,476

• Lead (Pb)-free device

• Qualified for lead (Pb)-free and Sn/Pb processing
(MSL4)

• Device in accordance with RoHS 2002/95/EC and
WEEE 2002/96/EC

Applications

• High-speed data transfer using infrared
wireless communication

• Mobile phones

• Camera phones

•PDAs

• MP3 Players

• Digital Cameras

• IrDA Adapters or Dongles

Package Options

Ordering Information

Part Number Qty / Reel or Tube Description and Remarks

TFBS6711-TR1 1000 pcs Oriented in carrier tape for side view surface mounting

TFBS6711-TR3 2500 pcs Oriented in carrier tape for side view surface mounting

Note: A version oriented in the carrier tape for top view mounting is available on request

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258

Document Number 84676

Rev. 1.2, 03-Jul-06

Functional Block Diagram

Amplifier

V

Comparator

CC1

TFBS6711

Vishay Semiconductors

Tri-State
Driver

RXD

V

CC2

SD

Logic
&

Control

Controlled
Driver

TXD

GND

19298

Figure 1. Functional Block Diagramm

Pin Description

Pin Number Function Description I/O Active

1V

2 TXD Transmit Data Input I HIGH

3 RXD Received Data Output, push-pull CMOS driver output capable of driving a

4 SD Shutdown, also used for dynamic mode switching I HIGH

5V

6 GND Ground

CC2

Anode

, IRED

CC1

IRED anode to be externally connected to V

3.6 V an external resistor might be necessary for reducing the internal power
dissipation. See derating curves. This pin is allowed to be supplied from an

uncontrolled power supply separated from the controlled V

standard CMOS load. No external pull-up or pull-down resistor is required.

Floating with a weak pull-up of 500 kΩ (typ.) in shutdown mode. The RXD

output echos the TXD input during transmission.

Supply voltage

. For higher voltages as

CC2

CC1

- supply

OLOW

TFBS6711
Weight: 50 mg

Document Number 84676

Rev. 1.2, 03-Jul-06

PIN 1

Figure 2. Pinning

19428

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259

TFBS6711

Vishay Semiconductors

Absolute Maximum Ratings

Reference point Pin, GND unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Parame te r Test Conditions Symbol Min Ty p. Max Unit

Supply voltage range,
transceiver

Supply voltage range,
transmitter

0 V < V

0 V < V

< 6 V V

CC2

< 6 V V

CC1

CC1

CC2

Input currents For all Pins, Except IRED Anode

Pin

Output sinking current 25 mA

Power dissipation P

Junction temperature T

Ambient temperature range
(operating)

Storage temperature range T

D

J

T

amb

stg

Soldering temperature 260 °C

Average output current I

Repetitive pulse output current < 90 µs, t

< 20 % I

on

IRED anode voltage I

Voltage at all inputs and outputs V

in

> V

is allowed V

CC1

Virtual source size Method: (1-1/e) encircled

(DC) 125 mA

IRED

(RP) 600 mA

IRED

IREDA

in

d1.5 mm

energy

Maximum Intensity for Class 1 operation of
IEC60825-1 or EN60825-1, edition Jan. 2001

®

IrDA

specified maximum limit

Due to the internal limitation measures the device is a “class 1” device. It will not exceed the IrDA
intensity limit of 500 mW/sr

- 0.5 6 V

- 0.5 6.5 V

10 mA

500 mW

125 °C

- 25 + 85°C

- 25 + 85°C

- 0.5 6.5 V

- 0.5 5.5 V

internal

mW/sr

limitation

to class 1

500

®

Definitions:

In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes:

SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhY 1.0

MIR: 576 kbit/s to 1152 kbit/s

FIR: 4 Mbit/s

VFIR: 16 Mbit/s

®

, the Infrared Data Association, implemented MIR and FIR with IrPHY 1.1, followed by IrPhY 1.2, adding the SIR Low Power Stan-

IrDA

dard. IrPhY 1.3 extended the Low Power Option to MIR and FIR and VFIR was added with IrPhY 1.4. A new version of the standard in any

case obsoletes the former version.

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260

Document Number 84676

Rev. 1.2, 03-Jul-06

TFBS6711

Vishay Semiconductors

Electrical Characteristics

T

= 25 °C, VCC = 2.4 V to 3.6 V unless otherwise noted.

amb

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Parameters Test Conditions / Pins Symbol Min Ty p. Max Unit

Transceiver

Supply voltage V

CC

Dynamic supply current Receive mode only.

In transmit mode, add additional 85 mA (typ) for IRED current.
Add RXD output current depending on RXD load.

I

SD = Low, SIR mode

SD = Low, MIR/FIR mode I

Shutdown supply current SD = High

T = 25 °C, not ambient light

CC

CC

I

SD

sensitive, detector is disabled in
shutdown mode

Shutdown supply current SD = High

T = 85 °C, not ambient light

I

SD

sensitive

Operating temperature range T

Output voltage low I

Output voltage high I

= 1 mA

OL

C

LOAD

= - 250 µA

OH

C

LOAD

= 15 pF

= 15 pF

Internal RXD pull-up R

Input voltage low (TXD, SD) V

Input voltage high (TXD, SD) V

Input leakage current (TXD, SD) I

Input capacitance
(TXD, SD)

*)

Standard illuminant A

**)

The typical threshold level is 0.5 x VCC (VCC = 3 V). It is recommended to use the specified min/max values to avoid increased operating/

V

V

OL

OH

RXD

IH

ICH

C

A

IL

I

shutdown currents.

2.4 3.6 V

1.7 3 mA

1.9 3.3 mA

1µA

5µA

- 25 + 85°C

0.4 V

0.9 x V

CC

V

400 500 600 kΩ

- 0.5 0.5 V

VCC - 0.5 VCC + 0.5 V

- 1 0.05 + 1 µA

5pF

Document Number 84676

Rev. 1.2, 03-Jul-06

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261

TFBS6711

Vishay Semiconductors

Optoelectronic Characteristics

T

= 25 °C, VCC = 2.4 V to 3.6 V unless otherwise noted.

amb

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

Parameter Test Conditions Symbol Min Ty p . Max Unit

Receiver

Minimum irradiance E

in

e

angular range **)

Minimum irradiance E

in

e

angular range
MIR mode

Minimum irradiance E

in

e

angular range
FIR mode

Maximum irradiance E

in

e

angular range ***)

No detection receiver Input
Irradiance (fluorescent light
noise suppression)

Rise time of output signal 10 % to 90 %, C

Fall time of output signal 90 % to 10 %, C

RXD pulse width of output
signal, 50%, SIR mode

RXD pulse width of output
signal, 50%, MIR mode

RXD pulse width of output
signal, 50%, FIR mode

RXD pulse width of output
signal, 50%, FIR mode

RXD output jitter, leading edge

Receiver start up time After completion of shutdown

9.6 kbit/s to 115.2 kbit/s
λ = 850 nm - 900 nm, V

CC

= 2.4 V

1.152 Mbit/s
λ = 850 nm - 900 nm, V

= 2.4 V

CC

4 Mbit/s
λ = 850 nm - 900 nm, V

= 2.4 V

CC

λ = 850 nm - 900 nm E

= 15 pF t

L

= 15 pF t

L

r (RXD)

f (RXD)

Input pulse length

1.4 μs < P

Wopt

< 25 µs

Input pulse length
P

= 217 ns, 1.152 Mbit/s

Wopt

Input pulse length
P

= 125 ns, 4 Mbit/s

Wopt

Input pulse length

= 250 ns, 4 Mbit/s

P

Wopt

Input irradiance = 150 mW/m

2

,

4 Mbit/s

1.152 Mbit/s

≤ 115.2 kbit/s

E

e 50

E

e 100

E

e 120

e 5

E

e 4

(0.4)

10 50 ns

10 50 ns

t

t

t

t

PW

PW

PW

PW

1.4 1.8 2.6 µs

110 250 270 ns

110 140 ns

225 275 ns

(5)

(10)

(12)

(500)

80

(8)

200

(20)

20

40

350

500 µs
programming sequence
Power on delay

Latency t

Note: All timing data measured with 4 Mbit/s are measured using the IrDA

®

L

FIR transmission header. The data given here are valid 5 µs

100 µs

after starting the preamble.

**)

IrDA sensitivity definition: Minimum Irradiance Ee In Angular Range, power per unit area. The receiver must meet the BER speci­fication while the source is operating at the minimum intensity in angular range into the minimum half-angle range at the maximum Link
Length

***)

Maximum Irradiance Ee In Angular Range, power per unit area. The optical delivered to the detector by a source operating at the
maximum intensity in angular range at Minimum Link Length must not cause receiver overdrive distortion and possible related link errors.
If placed at the Active Output Interface reference plane of the transmitter, the receiver must meet its bit error ratio (BER) specification.

mW/m

(µW/cm

mW/m

(µW/cm

mW/m

(µW/cm

kW/m

(mW/cm

mW/m

(µW/cm

ns

ns

ns

2

2

2

2

2

2

2

2

2

2

)

)

)

)

)

For more definitions see the document “Symbols and Terminology” on the Vishay Website (http://www.vishay.com/docs/82512/82512.pdf

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Document Number 84676

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).