VISHAY TFBS4711 Technical data

Serial Infrared Transceiver SIR, 115.2 kbit/s,

2.7 V to 5.5 V Operation

Description

The TFBS4711 is a low profile, Infrared Data Trans­ceiver module. It supports IrDA data rates up to

115.2 kbit/s (SIR). The transceiver module consists of
a PIN photodiode, an infrared emitter (IRED), and a
low-power CMOS control IC to provide a total front­end solution in a single package.

The device is designed for the low power IrDA stan­dard with an extended range on-axis up to 1 m. The
RXD pulse width is independent of the duration of
TXD pulse and always stays at a fixed width thus
making the device optimum for all standard SIR
Encoder/ Decoder and interfaces. The Shut Down
(SD) feature cuts current consumption to typically 10 nA.

Features

• Compliant with the latest IrDA physical
layer low power specification
( 9.6 kbit/s to 115.2 kbit/s)

• Small package:
H 1.9 mm x D 3.1 mm x L 6.0 mm

• Industries smallest footprint

- 6.0 mm length

- 1.9 mm height

• Typical Link distance on-axis up to 1 m

• Battery & power management features:
> Idle Current - 75 µA Typical
> Shutdown current - 10 nA typical
> Operates from 2.4 V - 5.5 V within specification
over full temperature range from - 25 °C to + 85 °C

• Remote Control - transmit distance up to 8 meters

e4

• Tri-State receiver output, floating in shutdown with
a weak pull-up

• Constant RXD output pulse width (2 µs typical)

• Meets IrFM Fast Connection requirements

• Split power supply, an independent, unregulated
supply for IRED Anode and a well regulated
supply for V

• Directly interfaces with various Super I/O and Con­troller Devices and Encoder/ Decoder such as
TOIM4232

• Lead (Pb)-free device

• Qualified for lead (Pb)-free and Sn/Pb processing
(MSL4)

• Device in accordance with RoHS 2002/95/EC and
WEEE 2002/96EC

CC

TFBS4711

Vishay Semiconductors

20208

Applications

• Ideal for battery operated devices

• PDAs

• Mobile phones

• Electronic wallet (IrFM)

• Notebook computers

• Digital still and video cameras

• Printers, fax machines, photocopiers,
screen projectors

• Data loggers

• External infrared adapters (Dongles)

• Diagnostics systems

• Medical and industrial data collection devices

• Kiosks, POS, Point and Pay devices

• GPS

• Access control

• Field programming devices

Parts Table

Par t Description Qty/Reel

TFBS4711-TR1 Oriented in carrier tape for side view surface mounting 1000 pcs

TFBS4711-TR3 Oriented in carrier tape for side view surface mounting 2500 pcs

TFBS4711-TT1 Oriented in carrier tape for top view surface mounting 1000 pcs

Document Number 82633

Rev. 1.9, 07-Nov-06

www.vishay.com

1

TFBS4711

Vishay Semiconductors

Functional Block Diagram

V

CC

Pinout

TFBS4711
weight 50 mg

18280

Comp Amp

SD

TXD

Power

Control

Driver

GND

Driver

Definitions:

In the Vishay transceiver data sheets the following nomenclature is

used for defining the IrDA operating modes:

RXD

IRED A

SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared

standard with the physical layer version IrPhy 1.0

MIR: 576 kbit/s to 1152 kbit/s

FIR: 4 Mbit/s

VFIR: 16 Mbit/s

MIR and FIR were implemented with IrPhy 1.1, followed by IrPhy

PIN 1

19428

1.2, adding the SIR Low Power Standard.

Pin Description

Pin Number Function Description I/O Active

1 IRED

Anode

2 TXD This Input is used to turn on IRED transmitter when SD is low. An on-chip protection

3 RXD Received Data Output, normally stays high but goes low for a fixed duration during

4 SD Shutdown. Setting this pin active switches the device into shutdown mode I HIGH

5

V

CC

6 GND Ground

IRED Anode is directly connected to a power supply. The LED current can be
decreased by adding a resistor in series between the power supply and IRED

Anode. A separate unregulated power supply can be used at this pin.

IHIGH

circuit disables the LED driver if the TXD pin is asserted for longer than 80 μs

OLOW

received pulses. It is capable of driving a standard CMOS or TTL load.

Supply Voltage

Absolute Maximum Ratings

Reference Point Ground, Pin 6 unless otherwise noted.

Parameter Test Conditions Symbol Min Ty p. Max Unit

Supply voltage range, all states

Input current For all Pins except IRED Anode Pin

V

CC

I

CC

Output sink current, RXD 25.0 mA

(DC)

Average output current, pin 1 20 % duty cycle

Repetitive pulsed output current

< 90 µs, t

< 20 % I

on

IRED anode voltage, pin 1

> VCC is allowed V

Voltage at all inputs and outputs

V

in

Ambient temperature range

I

IRED

IRED

V

IREDA

T

(RP)

IN

amb

(operating)

Storage temperature range

T

stg

Soldering temperature See Recommended Solder Profile 260 °C

www.vishay.com

2

- 0.5 + 6.0 V

10.0 mA

80 mA

400 mA

- 0.5 + 6.0 V

- 0.5 + 6.0 V

- 30 + 85 °C

- 40 + 100 °C

Document Number 82633

Rev. 1.9, 07-Nov-06

Eye safety information

Parameter Test Conditions Symbol Min Ty p. Max Unit

Virtual source size Method: (1-1/e) encircled

energy

Maximum intensity for class 1 IEC60825-1 or EN60825-1,

edition Jan. 2001, operating
below the absolute maximum
ratings

Electrical Characteristics

Transceiver

T

= 25 °C, VCC = V

amb

Parameter Test Conditions Symbol Min Ty p. Max Unit

Supply voltage range, all states V

Idle supply current at V
(receive mode, no signal)

Receive current

Shutdown current

Operating temperature range

Output voltage low, RXD

Output voltage high, RXD

RXD to V

impedance R

CC

Input voltage low: TXD, SD

Input voltage high: TXD, SD CMOS level (0.5 x V

Input leakage current (TXD, SD)

Controlled pull down current SD, TXD = "0" or "1",

Input capacitance

= 2.4 V to 5.5 V unless otherwise noted.

IREDA

CC1

SD = Low, E

= - 25 °C to + 85 °C,

T

amb

= 2.7 V to 5.5 V

V

CC

SD = Low, E

= 25 °C,

T

amb

= 2.7 V to 5.5 V

V

CC

= 2.7 V I

V

CC

= 1 klx*),

e

= 1 klx*),

e

SD = High, T = 25 °C, E

SD = High, T = 85 °C

I

= 1 mA V

OL

= - 500 µA V

I

OH

I

= - 250 µA V

OH

CC

threshold level)

= 0.9 x V

V

in

0 < V

< 0.15 V

in

CC

CC

SD, TXD = "0" or "1"
V

> 0.7 V

in

CC

= 0 klx I

e

typ,

TFBS4711

Vishay Semiconductors

d1.31.5 mm

*)

(500)

mW/sr

**)

130 µA

3µA

0.15 x V

VCC + 0.5

VCC + 0.5

CC

V

V

V

+ 150 µA

5pF

I

CC1

I

CC1

I

T

V

V

I

ICH

I

IRTx

I

IRTx

C

I

e

CC

CC

SD

SD

A

OL

OH

OH

RXD

IL

IH

IN

2.4 5.5 V

75 µA

80 µA

< 0.1 2 µA

- 25 + 85 °C

- 0.5

0.8 x V

CC

0.9 x V

CC

400 500 600 kΩ

- 0.5 0.5 V

VCC - 0.5 6.0 V

- 2 + 2 µA

- 1 0 1 µA

Document Number 82633

Rev. 1.9, 07-Nov-06

www.vishay.com

3

TFBS4711

Vishay Semiconductors

Optoelectronic Characteristics

Receiver

T

= 25 °C, VCC = 2.4 V to 5.5 V unless otherwise noted

amb

Parameter Test Conditions Symbol Min Ty p. Max Unit

Minimum irradiance E
angular range **)

in

e

9.6 kbit/s to 115.2 kbit/s
λ = 850 nm - 900 nm,

E

e

35

(3.5)

80
(8)

α = 0°, 15°

Maximum irradiance E

in

e

angular range***)

Maximum no detection
irradiance

Rise time of output signal

Fall time of output signal

RXD pulse width Input pulse width > 1.2 µs

Leading edge jitter

λ = 850 nm - 900 nm E

10 % to 90 %, C

90 % to 10 %, C

Input Irradiance = 100 mW/m

= 15 pF t

L

= 15 pF t

L

2

,

r(RXD)

f(RXD)

t

E

PW

e

5

(500)

e

4

(0.4)

10 100 ns

10 100 ns

1.7 2.0 3.0 µs

250 ns

≤ 115.2 kbit/s

Standby /Shutdown delay,
receiver startup time

Latency

**)

IrDA sensitivity definition: Minimum Irradiance Ee In Angular Range, power per unit area. The receiver must meet the BER specifica-

After shutdown active
or power-on

150 µs

t

L

150 µs

tion while the source is operating at the minimum intensity in angular range into the minimum half-angle range at the maximum Link Length.

***)

Maximum Irradiance Ee In Angular Range, power per unit area. The optical delivered to the detector by a source operating at the
maximum intensity in angular range at Minimum Link Length must not cause receiver overdrive distortion and possible related link errors.
If placed at the Active Output Interface reference plane of the transmitter, the receiver must meet its bit error ratio (BER).
For more definitions see the document “Symbols and Terminology” on the Vishay Website (http://www.vishay.com/docs/82512/82512.pdf).

mW/m

(µW/cm

kW/m

(mW/cm

mW/m

(µW/cm

2

2

)

2

2

2

2

)

)

Transmitter

T

= 25 °C, VCC = 2.4 V to 5.5 V unless otherwise noted.

amb

Parameter Test Conditions Symbol Min Ty p. Max Unit

= - 25 °C to + 85 °C I

IRED operating current

Transceiver operating peak
supply current

IRED leakage current

Output radiant intensity α = 0°, TXD = High, SD = Low,

Output radiant intensity, angle of
half intensity

Peak-emission wavelength

Spectral bandwidth Δλ 45 nm

Optical rise time

Optical fall time

Optical output pulse duration Input pulse width 1.63 µs,

Optical overshoot 25 %

T

amb

During pulsed IRED operation at
I

= 300 mA

D

TXD = 0 V, 0 < V

R = 0 Ω, V

LED

< 5.5 V I

CC

= 2.4 V

α = 0°, 15°, TXD = High, SD =
Low, R = 0 Ω, V

V

= 5.0 V, α = 0°, 15°, TXD =

CC

LED

= 2.4 V

High or SD = High (Receiver is
inactive as long as SD = High)

115.2 kbit/s

Input pulse width t

Input pulse width t

< 20 µs t

TXD

≥ 20 µs t

TXD

D

I

CC

IRED

I

e

I

e

I

e

200 300 400 mA

0.57 mA

- 1 1 µA

45 60 300 mW/sr

25 35 300 mW/sr

0.04 mW/sr

α ± 22 °

t

t

t

λ

ropt

fopt

opt

opt

p

880 900 nm

10 100 ns

10 100 ns

1.41 1.63 2.23 µs

t

TXD

t

TXD

+

0.15

opt

300 µs

µs

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4

Document Number 82633

Rev. 1.9, 07-Nov-06