VISHAY TFBS4711 Technical data

Serial Infrared Transceiver SIR, 115.2 kbit/s,

2.7 V to 5.5 V Operation

Description

The TFBS4711 is a low profile, Infrared Data Trans­ceiver module. It supports IrDA data rates up to

115.2 kbit/s (SIR). The transceiver module consists of
a PIN photodiode, an infrared emitter (IRED), and a
low-power CMOS control IC to provide a total front­end solution in a single package.

The device is designed for the low power IrDA stan­dard with an extended range on-axis up to 1 m. The
RXD pulse width is independent of the duration of
TXD pulse and always stays at a fixed width thus
making the device optimum for all standard SIR
Encoder/ Decoder and interfaces. The Shut Down
(SD) feature cuts current consumption to typically 10 nA.

Features

• Compliant with the latest IrDA physical
layer low power specification
( 9.6 kbit/s to 115.2 kbit/s)

• Small package:
H 1.9 mm x D 3.1 mm x L 6.0 mm

• Industries smallest footprint

- 6.0 mm length

- 1.9 mm height

• Typical Link distance on-axis up to 1 m

• Battery & power management features:
> Idle Current - 75 µA Typical
> Shutdown current - 10 nA typical
> Operates from 2.4 V - 5.5 V within specification
over full temperature range from - 25 °C to + 85 °C

• Remote Control - transmit distance up to 8 meters

e4

• Tri-State receiver output, floating in shutdown with
a weak pull-up

• Constant RXD output pulse width (2 µs typical)

• Meets IrFM Fast Connection requirements

• Split power supply, an independent, unregulated
supply for IRED Anode and a well regulated
supply for V

• Directly interfaces with various Super I/O and Con­troller Devices and Encoder/ Decoder such as
TOIM4232

• Lead (Pb)-free device

• Qualified for lead (Pb)-free and Sn/Pb processing
(MSL4)

• Device in accordance with RoHS 2002/95/EC and
WEEE 2002/96EC

CC

TFBS4711

Vishay Semiconductors

20208

Applications

• Ideal for battery operated devices

• PDAs

• Mobile phones

• Electronic wallet (IrFM)

• Notebook computers

• Digital still and video cameras

• Printers, fax machines, photocopiers,
screen projectors

• Data loggers

• External infrared adapters (Dongles)

• Diagnostics systems

• Medical and industrial data collection devices

• Kiosks, POS, Point and Pay devices

• GPS

• Access control

• Field programming devices

Parts Table

Par t Description Qty/Reel

TFBS4711-TR1 Oriented in carrier tape for side view surface mounting 1000 pcs

TFBS4711-TR3 Oriented in carrier tape for side view surface mounting 2500 pcs

TFBS4711-TT1 Oriented in carrier tape for top view surface mounting 1000 pcs

Document Number 82633

Rev. 1.9, 07-Nov-06

www.vishay.com

1

TFBS4711

Vishay Semiconductors

Functional Block Diagram

V

CC

Pinout

TFBS4711
weight 50 mg

18280

Comp Amp

SD

TXD

Power

Control

Driver

GND

Driver

Definitions:

In the Vishay transceiver data sheets the following nomenclature is

used for defining the IrDA operating modes:

RXD

IRED A

SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared

standard with the physical layer version IrPhy 1.0

MIR: 576 kbit/s to 1152 kbit/s

FIR: 4 Mbit/s

VFIR: 16 Mbit/s

MIR and FIR were implemented with IrPhy 1.1, followed by IrPhy

PIN 1

19428

1.2, adding the SIR Low Power Standard.

Pin Description

Pin Number Function Description I/O Active

1 IRED

Anode

2 TXD This Input is used to turn on IRED transmitter when SD is low. An on-chip protection

3 RXD Received Data Output, normally stays high but goes low for a fixed duration during

4 SD Shutdown. Setting this pin active switches the device into shutdown mode I HIGH

5

V

CC

6 GND Ground

IRED Anode is directly connected to a power supply. The LED current can be
decreased by adding a resistor in series between the power supply and IRED

Anode. A separate unregulated power supply can be used at this pin.

IHIGH

circuit disables the LED driver if the TXD pin is asserted for longer than 80 μs

OLOW

received pulses. It is capable of driving a standard CMOS or TTL load.

Supply Voltage

Absolute Maximum Ratings

Reference Point Ground, Pin 6 unless otherwise noted.

Parameter Test Conditions Symbol Min Ty p. Max Unit

Supply voltage range, all states

Input current For all Pins except IRED Anode Pin

V

CC

I

CC

Output sink current, RXD 25.0 mA

(DC)

Average output current, pin 1 20 % duty cycle

Repetitive pulsed output current

< 90 µs, t

< 20 % I

on

IRED anode voltage, pin 1

> VCC is allowed V

Voltage at all inputs and outputs

V

in

Ambient temperature range

I

IRED

IRED

V

IREDA

T

(RP)

IN

amb

(operating)

Storage temperature range

T

stg

Soldering temperature See Recommended Solder Profile 260 °C

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2

- 0.5 + 6.0 V

10.0 mA

80 mA

400 mA

- 0.5 + 6.0 V

- 0.5 + 6.0 V

- 30 + 85 °C

- 40 + 100 °C

Document Number 82633

Rev. 1.9, 07-Nov-06

Eye safety information

Parameter Test Conditions Symbol Min Ty p. Max Unit

Virtual source size Method: (1-1/e) encircled

energy

Maximum intensity for class 1 IEC60825-1 or EN60825-1,

edition Jan. 2001, operating
below the absolute maximum
ratings

Electrical Characteristics

Transceiver

T

= 25 °C, VCC = V

amb

Parameter Test Conditions Symbol Min Ty p. Max Unit

Supply voltage range, all states V

Idle supply current at V
(receive mode, no signal)

Receive current

Shutdown current

Operating temperature range

Output voltage low, RXD

Output voltage high, RXD

RXD to V

impedance R

CC

Input voltage low: TXD, SD

Input voltage high: TXD, SD CMOS level (0.5 x V

Input leakage current (TXD, SD)

Controlled pull down current SD, TXD = "0" or "1",

Input capacitance

= 2.4 V to 5.5 V unless otherwise noted.

IREDA

CC1

SD = Low, E

= - 25 °C to + 85 °C,

T

amb

= 2.7 V to 5.5 V

V

CC

SD = Low, E

= 25 °C,

T

amb

= 2.7 V to 5.5 V

V

CC

= 2.7 V I

V

CC

= 1 klx*),

e

= 1 klx*),

e

SD = High, T = 25 °C, E

SD = High, T = 85 °C

I

= 1 mA V

OL

= - 500 µA V

I

OH

I

= - 250 µA V

OH

CC

threshold level)

= 0.9 x V

V

in

0 < V

< 0.15 V

in

CC

CC

SD, TXD = "0" or "1"
V

> 0.7 V

in

CC

= 0 klx I

e

typ,

TFBS4711

Vishay Semiconductors

d1.31.5 mm

*)

(500)

mW/sr

**)

130 µA

3µA

0.15 x V

VCC + 0.5

VCC + 0.5

CC

V

V

V

+ 150 µA

5pF

I

CC1

I

CC1

I

T

V

V

I

ICH

I

IRTx

I

IRTx

C

I

e

CC

CC

SD

SD

A

OL

OH

OH

RXD

IL

IH

IN

2.4 5.5 V

75 µA

80 µA

< 0.1 2 µA

- 25 + 85 °C

- 0.5

0.8 x V

CC

0.9 x V

CC

400 500 600 kΩ

- 0.5 0.5 V

VCC - 0.5 6.0 V

- 2 + 2 µA

- 1 0 1 µA

Document Number 82633

Rev. 1.9, 07-Nov-06

www.vishay.com

3

TFBS4711

Vishay Semiconductors

Optoelectronic Characteristics

Receiver

T

= 25 °C, VCC = 2.4 V to 5.5 V unless otherwise noted

amb

Parameter Test Conditions Symbol Min Ty p. Max Unit

Minimum irradiance E
angular range **)

in

e

9.6 kbit/s to 115.2 kbit/s
λ = 850 nm - 900 nm,

E

e

35

(3.5)

80
(8)

α = 0°, 15°

Maximum irradiance E

in

e

angular range***)

Maximum no detection
irradiance

Rise time of output signal

Fall time of output signal

RXD pulse width Input pulse width > 1.2 µs

Leading edge jitter

λ = 850 nm - 900 nm E

10 % to 90 %, C

90 % to 10 %, C

Input Irradiance = 100 mW/m

= 15 pF t

L

= 15 pF t

L

2

,

r(RXD)

f(RXD)

t

E

PW

e

5

(500)

e

4

(0.4)

10 100 ns

10 100 ns

1.7 2.0 3.0 µs

250 ns

≤ 115.2 kbit/s

Standby /Shutdown delay,
receiver startup time

Latency

**)

IrDA sensitivity definition: Minimum Irradiance Ee In Angular Range, power per unit area. The receiver must meet the BER specifica-

After shutdown active
or power-on

150 µs

t

L

150 µs

tion while the source is operating at the minimum intensity in angular range into the minimum half-angle range at the maximum Link Length.

***)

Maximum Irradiance Ee In Angular Range, power per unit area. The optical delivered to the detector by a source operating at the
maximum intensity in angular range at Minimum Link Length must not cause receiver overdrive distortion and possible related link errors.
If placed at the Active Output Interface reference plane of the transmitter, the receiver must meet its bit error ratio (BER).
For more definitions see the document “Symbols and Terminology” on the Vishay Website (http://www.vishay.com/docs/82512/82512.pdf).

mW/m

(µW/cm

kW/m

(mW/cm

mW/m

(µW/cm

2

2

)

2

2

2

2

)

)

Transmitter

T

= 25 °C, VCC = 2.4 V to 5.5 V unless otherwise noted.

amb

Parameter Test Conditions Symbol Min Ty p. Max Unit

= - 25 °C to + 85 °C I

IRED operating current

Transceiver operating peak
supply current

IRED leakage current

Output radiant intensity α = 0°, TXD = High, SD = Low,

Output radiant intensity, angle of
half intensity

Peak-emission wavelength

Spectral bandwidth Δλ 45 nm

Optical rise time

Optical fall time

Optical output pulse duration Input pulse width 1.63 µs,

Optical overshoot 25 %

T

amb

During pulsed IRED operation at
I

= 300 mA

D

TXD = 0 V, 0 < V

R = 0 Ω, V

LED

< 5.5 V I

CC

= 2.4 V

α = 0°, 15°, TXD = High, SD =
Low, R = 0 Ω, V

V

= 5.0 V, α = 0°, 15°, TXD =

CC

LED

= 2.4 V

High or SD = High (Receiver is
inactive as long as SD = High)

115.2 kbit/s

Input pulse width t

Input pulse width t

< 20 µs t

TXD

≥ 20 µs t

TXD

D

I

CC

IRED

I

e

I

e

I

e

200 300 400 mA

0.57 mA

- 1 1 µA

45 60 300 mW/sr

25 35 300 mW/sr

0.04 mW/sr

α ± 22 °

t

t

t

λ

ropt

fopt

opt

opt

p

880 900 nm

10 100 ns

10 100 ns

1.41 1.63 2.23 µs

t

TXD

t

TXD

+

0.15

opt

300 µs

µs

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4

Document Number 82633

Rev. 1.9, 07-Nov-06

Recommended Solder Profiles

0

20

40

60

80

100

120

140

160

180

200

220

240

260

0 50 100 150 200 250 300 350

Time/s

Tem peratu re/°C

2...4 °C/s

2...4 °C/s

10 s max. at 230 °C

120 s...180 s

160 °C max.

240 °C max.

90 s max.

20

Solder Profile for Sn/Pb soldering

Figure 1. Recommended Solder Profile for Sn/Pb soldering

19431

TFBS4711

Vishay Semiconductors

Manual Soldering

Manual soldering is the standard method for lab use.
However, for a production process it cannot be rec­ommended because the risk of damage is highly
dependent on the experience of the operator. Never­theless, we added a chapter to the above mentioned
application note, describing manual soldering and
desoldering.

Storage

The storage and drying processes for all VISHAY
transceivers (TFDUxxxx and TFBSxxx) are equiva­lent to MSL4.
The data for the drying procedure is given on labels
on the packing and also in the application note
"Taping, Labeling, Storage and Packing"
(http://www.vishay.com/docs/82601/82601.pdf).

Lead (Pb)-Free, Recommended Solder Profile

The TFBS4711 is a lead (Pb)-free transceiver and
qualified for lead (Pb)-free processing. For lead
(Pb)-free solder paste like Sn(3.0-4.0)Ag(0.5-0.9)Cu,
there are two standard reflow profiles: Ramp-Soak­Spike (RSS) and Ramp-To-Spike (RTS). The Ramp­Soak-Spike profile was developed primarily for reflow
ovens heated by infrared radiation. With widespread
use of forced convection reflow ovens the Ramp-To­Spike profile is used increasingly. Shown below in fig­ure 2 is VISHAY's recommended profiles for use with
the TFBS4711 transceivers. For more details please
refer to Application note: SMD Assembly Instruction.

Wave Soldering

For TFDUxxxx and TFBSxxxx transceiver devices
wave soldering is not recommended.

280

260

240

220

200

180

160

140

120

Temperature/°C

100

80

60

2 °C...4 °C/s

40

20

0

0 50 100 150 200 250 300 350

19261

T ≥ 255 °C for 20 s max

T ≥ 217 °C for 50 s max

90 s...120 s

Time/s

s

50 s max.

T

peak

= 260 °C max.

Figure 2. Solder Profile, RSS Recommendation

2 °C...4 °C/s

Document Number 82633

Rev. 1.9, 07-Nov-06

www.vishay.com

5

TFBS4711

Vishay Semiconductors

Recommended Circuit Diagram

V

CC

IR Controller

C4

0.1 μF

TFBS4711

IREDA (1)

TXD (2)

RXD (3)

SD (4)

Vcc (5)

GND (6)

Vdd

IRTX

IRRX

IRMODE

GND

4.7 μF

18510

Figure 3. Recommended Application Circuit

C1

Rled

R1= 47Ω

C2

0.1μFC34.7 μF

Operated at a clean low impedance power supply the
TFBS4711 needs no additional external components
when the internal current control is used. For reducing
the IRED drive current for low power applications with
reduced range an additional resistor can be used to
connect the IRED to the separate power supply.
Depending on the entire system design and board
layout, additional components may be required. (see
figure 3).

Worst-case conditions are test set-ups with long
cables to power supplies. In such a case capacitors
are necessary to compensate the effect of the cable
inductance. In case of small applications as e.g.
mobile phones where the power supply is close to the
transceiver big capacitors are normally not neces­sary. The capacitor C1 is buffering the supply voltage
and eliminates the inductance of the power supply
line. This one should be a small ceramic version or
other fast capacitor to guarantee the fast rise time of
the IRED current. The resistor R1 is optional for
reducing the IRED drive current.
Vishay transceivers integrate a sensitive receiver and
a built-in power driver. The combination of both needs
a careful circuit board layout. The use of thin, long,

resistive and inductive wiring should be avoided. The
inputs (TXD, SD) and the output RXD should be
directly (DC) coupled to the I/O circuit

The capacitor C2 combined with the resistor R2 is the
low pass filter for smoothing the supply voltage when
noisy supply voltage is used or pick-up via the wiring
is expected.
R2, C1 and C2 are optional and dependent on the
quality of the supply voltage V

and injected noise.

CCX

An unstable power supply with dropping voltage dur­ing transmission may reduce the sensitivity (and
transmission range) of the transceiver.
The placement of these parts is critical. It is strongly
recommended to position C2 as close as possible to
the transceiver power supply pins.
In any case, when connecting the described circuit to
the power supply, low impedance wiring should be
used.
When extended wiring is used the inductance of the
power supply can cause dynamically a voltage drop
at V

. Often some power supplies are not to follow

CC2

the fast current rise time. In that case another 10 µF
capacitor at V

will be helpful.

CC2

The recommended components in table 1 are for test
set-ups
Keep in mind that basic RF - design rules for circuit
design should be taken into account. Especially
longer signal lines should not be used without termi­nation. See e.g. "The Art of Electronics" Paul Horow­itz, Winfield Hill, 1989, Cambridge University Press,
ISBN: 0521370957

I/O and Software

In the description, already different I/Os are men­tioned. Different combinations are tested and the
function verified with the special drivers available
from the I/O suppliers. In special cases refer to the I/
O manual, the Vishay application notes, or contact
directly Vishay Sales, Marketing or Application.

Table 1.
Recommended Application Circuit Components

Component Recommended Value Vishay Part Number

C1, C3 4.7 µF, 16 V 293D 475X9 016B

C2, C4 0.1 µF, Ceramic VJ 1206 Y 104 J XXMT

R1 47 Ω, 0.125 W CRCW-1206-47R0-F-RT1

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6

Document Number 82633

Rev. 1.9, 07-Nov-06

TFBS4711

Vishay Semiconductors

Table 2.
Truth table

SD TXD Optical input Irradiance

Inputs Inputs Inputs Outputs Outputs Remark

high x x weakly pulled

low high x high inactive

low high

> 300 µs

low low < 4 high inactive 0 Ignoring low signals below the

low low > Min. Detection Threshold Irradiance

< Max. Detection Threshold Irradiance

low low > Max. Detection Threshold Irradiance undefined 0 Overload conditions can

2

mW/m

x high inactive 0 Protection is active

Package Dimensions in mm

RXD Transmitter Operation

0 Shutdown

(500 Ω) to V

low (active) 0 Response to an IrDA

CC1

I

e

Transmitting

IrDA defined threshold for

noise immunity

compliant optical input signal

cause unexpected outputs

19612

Figure 4. Package drawing of TFBS4711, tolerance of height is + 0.1mm, - 0.2 mm, other tolerances ± 0.2 mm

Document Number 82633

Rev. 1.9, 07-Nov-06

www.vishay.com

7

TFBS4711

Vishay Semiconductors

Reel Dimensions

19728

Figure 5. Recommended Solder Footprint

Drawing-No.: 9.800-5090.01-4
Issue: 1; 29.11.05

14017

Tape Width A max. N

mm mm mm mm mm mm mm

16 330 50 16.4 22.4 15.9 19.4

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8

W1 min. W2 max. W3 min. W3 max.

Document Number 82633

Rev. 1.9, 07-Nov-06

Tape Dimensions in mm

TFBS4711

Vishay Semiconductors

19613

Document Number 82633

Rev. 1.9, 07-Nov-06

www.vishay.com

9

TFBS4711

Vishay Semiconductors

Tape Dimensions in mm

20416

www.vishay.com

10

Document Number 82633

Rev. 1.9, 07-Nov-06

TFBS4711

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number 82633

Rev. 1.9, 07-Nov-06

www.vishay.com

11

Legal Disclaimer Notice

Vishay

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.