TEMT6000 ambient light sensor plays a key role in
power savings strategies by controlling LCD display
intensity and keypad backlighting of mobile devices
and in industrial on/off-lighting operation. It is sensitive
to visible light much like the human eye and has peak
sensitivity at 570 nm. TEMT6000 has analog output
and is packaged in a small surface mount package.
TEMT6000
Vishay Semiconductors
18527
Features
• High sensivity, I
• Adapted to human eye responsivity
• Wide angle of half sensitivity ϕ = ± 60°
• Surface mount package:
H 1 mm x L 4 mm x W 2 mm
• Suitable for IR reflow soldering (Sn or SnPb)
• Lead (Pb)-free component
• Component in accordance with RoHS 2002/95/EC
and WEEE 2002/96/EC
= 50 µA (EV = 100 lx)
PCE
e4
Applications
Ambient light sensor for control of display backlight
dimming in LCD displays and keypad backlighting of
mobile devices and in industrial on/off-lighting operation.
• Mobile phones
• Notebook computers
•PDA’s
• Cameras
• Dashboards
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
ParameterTest conditionSymbolVal ueUnit
Collector emitter voltageV
Emitter collector voltageV
Collector currentI
Total power dissipationT
Junction temperatureT
Operating temperature rangeT
Storage temperature rangeT
Soldering temperatureReflow Profile Figure 7T
Thermal resistance junction/
ambient
≤ 55 °CP
amb
R
CEO
ECO
C
tot
amb
stg
sd
thJA
6V
1.5V
20mA
100mW
j
100°C
- 40 to + 85°C
- 40 to + 85°C
260°C
450K/W
Document Number 81579
Rev. 1.3, 28-Nov-06
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1
TEMT6000
Vishay Semiconductors
Basic Characteristics
T
= 25 °C, unless otherwise specified
amb
ParameterTest conditionSymbolMinTy p.MaxUnit
Collector emitter breakdown
voltage
Collector dark currentV
Collector-emitter capacitanceV
Collector light currentE
= 0.1 mAV
I
C
= 5 V, E = 0I
CE
= 0 V, f = 1 MHz, E = 0C
CE
= 20 lx, CIE illuminant A,
v
= 5 V
V
CE
E
= 100 lx, CIE illuminant A,
v
V
= 5 V
CE
CEO
CEO
CEO
I
PCE
I
PCE
Angle of half sensitivityϕ± 60deg
Wavelength of peak sensitivityλ
Range of spectral bandwidthλ
Collector emitter saturation
voltage
E
= 20 lx, standard light A,
v
= 1.2 µA
I
PCE
V
p
0.1
CEsat
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
6V
350nA
16pF
3.51016µA
50µA
570nm
360 to 970nm
0.1V
-6
10
10
10
10
10
10
10
CEO
I - Collector Dark Current (A)
10
19758
VCE = 5 V
-7
-8
-9
-10
-11
-12
-13
T - Ambient Temperature (°C)
amb
806040200- 20- 40
100
Figure 1. Collector Dark Current vs. Ambient Temperature
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
PCE rel
I - Relative Photo Current
19759
0.4
0.2
0.0
T - Ambient Temperature (°C)
amb
VCE = 5 V, T = 2856 K
100806040200- 20- 40
1000
100
10
PCE
I- Photo Current (µA)
1
101001000
- Illuminance (Ix)
19760
E
v
Figure 3. Photo Current vs. Illuminance
25
20
15
10
5
- Collector Emitter Capacitance (pF)
CE0
0
C
0.11.010.0
19762
VCE- Collector Emitter Voltage (V)
f = 1 MHz
Figure 2. Relative Photo Current vs. Ambient Temperature
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2
Figure 4. Collector Emitter Capacitance vs. Collector Emitter
Voltage
Document Number 81579
Rev. 1.3, 28-Nov-06
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
rel
0.1
λ
0.0
S( ) - Relative Spectral Sensitivity
300 400 500 600 700 800 900 1000 1100
20019
λ - Wavelength (nm)
- Relative Sensitivity
rel
S
94 8318
1.0
0.9
0.8
0.7
Vishay Semiconductors
0°
0.4 0.200.20.4
0.6
TEMT6000
10°20°
30°
40°
50°
60°
70°
80°
0.6
Figure 5. Relative Spectral Sensitivity vs. Wavelength
Figure 6. Relative Radiant Sensitivity vs. Angular Displacement
Reflow Solder ProfilesDrypack
Devices are packed in moisture barrier bags (MBB) to
PreheatReflowCooling
280
260
240
220
200
180
160
140
120
100
Temperature (°C)
19030
125 °C
80
60
40
20
0
30
0
260 °C
250 °C
210 °C
145 °C
30 s
~
40 s120 s
~
60
12090
Time (s)
210
180150
Figure 7. Tin (Sn) Reflow Solder Profile (Pb-free)
300
max. 240 °C ca. 230 °C
250
10 s
20 s
~
240
300270
948625
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Floor Life
Floor life (time between soldering and removing from
MBB) must not exceed the time indicated in
J-STD-020. TEMT6000 is released for:
Moisture Sensitivity Level 4, according to JEDEC,
J-STD-020
Floor Life: 72 h
Conditions: T
Drying
In case of moisture absorption devices should be
baked before soldering. Conditions see J-STD-020 or
Label. Devices taped on reel dry using recommended
conditions 192 h at 40 °C (+ 5 °C), RH < 5 %
< 30 °C, RH < 60 %
amb
200
150
100
Temperature (°C)
50
0
2 K/s - 4 K/s
0
Figure 8. Lead Tin (SnPb) Reflow Solder Profile
Document Number 81579
Rev. 1.3, 28-Nov-06
215 °C
max. 160 °C
90 s - 120 s
100 50
Time (s)
max 40s
Lead Temperature
full line : typical
dotted :process limits
150
250200
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3
TEMT6000
Vishay Semiconductors
Package Dimensions
18464
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4
Document Number 81579
Rev. 1.3, 28-Nov-06
TEMT6000
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.