VISHAY TEMD5100 Technical data
Silicon PIN Photodiode
Description
TEMD5100 is a high speed and high sensitive PIN
photodiode in a miniature flat plastic package. Its top
view construction makes it ideal as a low cost replacement of TO–5 devices in many applications.
The epoxy package itself is an IR filter, spectrally
matched to GaAs or GaAs on GaAlAs IR emitters
(
l
=950nm). The large active area combined with a flat
p
case gives a high sensitivity at a wide viewing angle.
Features
TEMD5100
Vishay Semiconductors
D
Large radiant sensitive area (A=7.5 mm2)
D
Wide angle of half sensitivity ϕ = ± 65
D
High photo sensitivity
D
Fast response times
D
Small junction capacitance
D
Plastic case with IR filter (l=950 nm)
°
Applications
High speed photo detector
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Power Dissipation T
Junction Temperature T
Storage Temperature Range T
Soldering Temperature t x 3 s T
Thermal Resistance Junction/Ambient R
x 25 °C P
amb
R
V
j
stg
sd
thJA
60 V
215 mW
100
–55...+100
260
350 K/W
12776
°
C
°
C
°
C
Document Number 81553
Rev. 3, 25-May-00
www.vishay.com
1 (5)
TEMD5100
Vishay Semiconductors
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Breakdown Voltage IR = 100 mA, E = 0 V
Reverse Dark Current VR = 10 V, E = 0 I
Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 C
VR = 3 V, f = 1 MHz, E = 0 C
Open Circuit Voltage Ee = 1 mW/cm2, l = 950 nm V
Short Circuit Current Ee = 1 mW/cm2, l = 950 nm I
Reverse Light Current Ee = 1 mW/cm2,
l
= 950 nm, VR = 5 V
(BR)
ro
D
D
o
k
I
ra
Angle of Half Sensitivity ϕ ±65 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
l
p
l
0.5
Noise Equivalent Power VR = 10 V, l = 950 nm NEP 4x10
Rise Time VR = 10 V, RL = 1 kW,
l
= 820 nm
Fall Time VR = 10 V, RL = 1 kW,
l
= 820 nm
t
r
t
f
60 V
2 30 nA
70 pF
25 40 pF
350 mV
50
40 55
m
m
950 nm
840...1050 nm
–14
W/√ Hz
100 ns
100 ns
A
A
Typical Characteristics (T
1000
100
10
ro
I – Reverse Dark Current ( nA )
1
20 40 60 80
T
94 8403
Figure 1. Reverse Dark Current vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
VR=10V
= 25_C unless otherwise specified)
amb
100
1.4
1.2
1.0
0.8
ra rel
I – Relative Reverse Light Current
0.6
020406080
T
94 8409
Figure 2. Relative Reverse Light Current vs.
– Ambient Temperature ( °C )
amb
Ambient Temperature
VR=5V
l
=950nm
100
www.vishay.com
2 (5) Rev. 3, 25-May-00
Document Number 81553
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