Silicon PIN Photodiode
Description
TEMD5100 is a high speed and high sensitive PIN
photodiode in a miniature flat plastic package. Its top
view construction makes it ideal as a low cost replacement of TO–5 devices in many applications.
The epoxy package itself is an IR filter, spectrally
matched to GaAs or GaAs on GaAlAs IR emitters
(
l
=950nm). The large active area combined with a flat
p
case gives a high sensitivity at a wide viewing angle.
Features
TEMD5100
Vishay Semiconductors
D
Large radiant sensitive area (A=7.5 mm2)
D
Wide angle of half sensitivity ϕ = ± 65
D
High photo sensitivity
D
Fast response times
D
Small junction capacitance
D
Plastic case with IR filter (l=950 nm)
°
Applications
High speed photo detector
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Power Dissipation T
Junction Temperature T
Storage Temperature Range T
Soldering Temperature t x 3 s T
Thermal Resistance Junction/Ambient R
x 25 °C P
amb
R
V
j
stg
sd
thJA
60 V
215 mW
100
–55...+100
260
350 K/W
12776
°
C
°
C
°
C
Document Number 81553
Rev. 3, 25-May-00
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1 (5)
TEMD5100
Vishay Semiconductors
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Breakdown Voltage IR = 100 mA, E = 0 V
Reverse Dark Current VR = 10 V, E = 0 I
Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 C
VR = 3 V, f = 1 MHz, E = 0 C
Open Circuit Voltage Ee = 1 mW/cm2, l = 950 nm V
Short Circuit Current Ee = 1 mW/cm2, l = 950 nm I
Reverse Light Current Ee = 1 mW/cm2,
l
= 950 nm, VR = 5 V
(BR)
ro
D
D
o
k
I
ra
Angle of Half Sensitivity ϕ ±65 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
l
p
l
0.5
Noise Equivalent Power VR = 10 V, l = 950 nm NEP 4x10
Rise Time VR = 10 V, RL = 1 kW,
l
= 820 nm
Fall Time VR = 10 V, RL = 1 kW,
l
= 820 nm
t
r
t
f
60 V
2 30 nA
70 pF
25 40 pF
350 mV
50
40 55
m
m
950 nm
840...1050 nm
–14
W/√ Hz
100 ns
100 ns
A
A
Typical Characteristics (T
1000
100
10
ro
I – Reverse Dark Current ( nA )
1
20 40 60 80
T
94 8403
Figure 1. Reverse Dark Current vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
VR=10V
= 25_C unless otherwise specified)
amb
100
1.4
1.2
1.0
0.8
ra rel
I – Relative Reverse Light Current
0.6
020406080
T
94 8409
Figure 2. Relative Reverse Light Current vs.
– Ambient Temperature ( °C )
amb
Ambient Temperature
VR=5V
l
=950nm
100
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2 (5) Rev. 3, 25-May-00
Document Number 81553
TEMD5100
Vishay Semiconductors
1000
m
100
10
1
ra
I – Reverse Light Current ( A )
VR=5V
l
=950nm
0.1
0.01 0.1 1
12787
Ee – Irradiance ( mW/cm2 )
10
Figure 3. Reverse Light Current vs. Irradiance
12788
100
m
10
ra
I – Reverse Light Current ( A )
l
1
=950nm
0.1 1 10
V
– Reverse Voltage ( V )
R
1mW/cm
0.05mW/cm
0.5mW/cm
0.2mW/cm
0.1mW/cm
2
2
2
2
2
100
Figure 4. Reverse Light Current vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
rel
0.2
l
S ( ) – Relative Spectral Sensitivity
0
1150
12786
750 850 950 1050
l
– Wavelength ( nm )
Figure 6. Relative Spectral Sensitivity vs. Wavelength
0°
10°20
°
30°
40°
1.0
0.9
0.8
rel
S – Relative Sensitivity
0.7
50°
60°
70°
80°
0.6
94 8406
0.4 0.2 0 0.2 0.4
0.6
Figure 7. Relative Radiant Sensitivity vs.
Angular Displacement
80
E=0
f=1MHz
60
40
20
D
C – Diode Capacitance ( pF )
0
0.1 1 10
94 8407
VR – Reverse Voltage ( V )
Figure 5. Diode Capacitance vs. Reverse Voltage
Document Number 81553
Rev. 3, 25-May-00
100
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3 (5)
TEMD5100
Vishay Semiconductors
Dimensions in mm
12774
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4 (5) Rev. 3, 25-May-00
Document Number 81553
TEMD5100
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Document Number 81553
Rev. 3, 25-May-00
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
5 (5)
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