VISHAY TEMD1000 Technical data

TEMD1000, TEMD1020, TEMD1030, TEMD1040

Vishay Semiconductors

Silicon PIN Photodiode, RoHS Compliant

TEMD1000

TEMD1020

FEATURES

• Package type: surface mount

• Package form: GW, RGW, yoke, axial

TEMD1030

• Dimensions (L x W x H in mm): 2.5 x 2 x 2.7

2

• Radiant sensitive area (in mm

): 0.23

• High radiant sensitivity

• Daylight blocking filter matched with 870 nm to
950 nm emitters

TEMD1040

• Fast response times

• Angle of half sensitivity: ϕ = ± 15°

• Package matches with IR emitter series TSMF1000

18029

• Floor life: 168 h, MSL 3, acc. J-STD-020

• Lead (Pb)-free component in accordance with

DESCRIPTION

TEMD1000 series are PIN photodiodes with high speed and
high radiant sensitivity in black, surface mount plastic
packages with lens and daylight blocking filter. Filter
bandwidth is matched with 870 nm to 950 nm IR emitters.

RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS

• High speed detector for infrared radiation

• Infrared remote control and free air data
transmissionsystems, e.g. in combination with TSFFxxxx
series IR emitters

PRODUCT SUMMARY

COMPONENT Ira (mA) ϕ (deg) λ

TEMD1000 12 ± 15 790 to 1050
TEMD1020 12 ± 15 790 to 1050
TEMD1030 12 ± 15 790 to 1050
TEMD1040 12 ± 15 790 to 1050

Note

Test conditions see table “Basic Characteristics”

0.5

(nm)

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

TEMD1000 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing
TEMD1020 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing
TEMD1030 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Yoke
TEMD1040 Bulk MOQ: 1000 pcs, 1000 pcs/bulk Axial leads

Note

MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage V

Power dissipation T

Junction temperature T

Operating temperature range T

Storage temperature range T

Soldering temperature t ≤ 5 s T

Note

T

= 25 °C, unless otherwise specified

amb

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436 Rev. 2.1, 08-Sep-08

≤ 25 °C P

amb

R

V

j

amb

stg

sd

60 V

75 mW

100 °C

- 40 to + 85 °C

- 40 to + 100 °C

< 260 °C

Document Number: 81564

TEMD1000, TEMD1020, TEMD1030, TEMD1040

Silicon PIN Photodiode, RoHS Compliant

Vishay Semiconductors

BASIC CHARACTERISTICS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Forward voltage I

Breakdown voltage I

Reverse dark current V

Diode capacitance V

E

e

Reverse light current

Temperature coefficient of I

ra

E

e

Absolute spectral sensitivity

Angle of half sensitivity

Wavelength of peak sensitivity λ

Range of spectral bandwidth λ

Rise time V

Fall time V

= 10 V, RL = 50 Ω, λ = 820 nm t

R

= 10 V, RL = 50 Ω, λ = 820 nm t

R

Note

T

= 25 °C, unless otherwise specified

amb

= 50 mA V

F

= 100 µA, E = 0 V

R

= 10 V, E = 0 I

R

= 5 V, f = 1 MHz, E = 0 C

R

= 1 mW/cm2, λ = 8 70 n m ,

V

= 5 V

R

= 1 mW/cm2, λ = 9 50 n m ,

V

= 5 V

R

VR = 5 V, λ = 870 nm, TK

V

= 5 V, λ = 870 nm s(λ)0.60A/W

R

V

= 5 V, λ = 950 nm s(λ)0.55A/W

R

(BR)

ro

I

ra

I

ra

F

60 V

D

512 µA

Ira

ϕ

p

0.5

r

f

11.3V

110nA

1.8 pF

10 µA

0.2 %/K

± 15 deg

940 nm

790 to 1050 nm

4ns

4ns

BASIC CHARACTERISTICS

T

= 25 °C, unless otherwise specified

amb

- Relative Reverse Light Current

ra, rel

I

94 8416

1.4

1.2

1.0

0.8

0.6

VR = 5 V

λ = 950 nm

4020

0

T

- Ambient Temperature (°C)

amb

60

1000

100

10

- Reverse Dark Current (nA)

ro

I

1

20

94 8427

T

- Ambient Temperature (°C)

amb

VR = 10 V

806040

100

Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature

10080

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Rev. 2.1, 08-Sep-08 437

TEMD1000, TEMD1020, TEMD1030, TEMD1040

Vishay Semiconductors

100

10

1.0

- Reverse Light Current (µA)

ra

I

0.1

0.01

16055

Fig. 3 - Reverse Light Current vs. Irradiance

8

6

4

0.1

Ee - Irradiance (mW/cm²)

E=0

f=1MHz

V

= 5 V

CE

λ

= 950 nm

1

Silicon PIN Photodiode, RoHS Compliant

1.2

1.0

0.8

0.6

0.4

- Relative Spectral Sensivity

rel

0.2

S(λ)

0.0

10

750 850 950 1050 1150

94 8426

λ - Wavelength (nm)

Fig. 5 - Relative Spectral Sensitivity vs. Wavelength

1.0

0.9

0°

10° 20°

30°

40°

50°

2

- Diode Capacitance (pF)

D

C

0

0.1

94 8430

1

VR- Reverse Voltage (V)

Fig. 4 - Diode Capacitance vs. Reverse Voltage

PRECAUTIONS FOR USE

0.8

- Relative Sensitivity

rel

S

0.7

10

100

94 8248

0.6

0.20.4

0

Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement

REFLOW SOLDER PROFILE

60°

70°

80°

ϕ - Angular Displacement

1. Over-current-proof

Customer must apply resistors for protection, otherwise
slight voltage shift will cause big current change (burn out will
happen).

2. Storage

2.1 Storage temperature and rel. humidity conditions are:
5 °C to 35 °C, R.H. 60 %.

2.2 Floor life must not exceed 168 h, acc. to JEDEC level 3,
J-STD-020.
Once the package is opened, the products should be
used within a week. Otherwise, they should be kept in a
damp proof box with desiccant.
Considering tape life, we suggest to use products within
one year from production date.

2.3 If opened more than one week in an atmosphere 5 °C to

260

240

220

200

180

160

140

120

Temperature (°C)

100

80

60

020406080 100 120 140 160 180 200 220

17172

+ 5 °C/s

60 s to 120 s

Time (s)

- 5 °C/s

5 s

Fig. 7 - Lead Tin (SnPb) Reflow Solder Profile

35 °C, R.H. 60 %, devices should be treated at 60 °C
± 5 °C for 15 h.

2.4 If humidity indicator in the package shows pink color
(normal blue), then devices should be treated with the
same conditions as 2.3.

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438 Rev. 2.1, 08-Sep-08

Document Number: 81564