VISHAY TEMD1000 Technical data

TEMD1000, TEMD1020, TEMD1030, TEMD1040

Vishay Semiconductors

Silicon PIN Photodiode, RoHS Compliant

TEMD1000

TEMD1020

TEMD1030

TEMD1040

18029

DESCRIPTION

TEMD1000 series are PIN photodiodes with high speed and high radiant sensitivity in black, surface mount plastic packages with lens and daylight blocking filter. Filter bandwidth is matched with 870 nm to 950 nm IR emitters.

FEATURES

• Package type: surface mount

• Package form: GW, RGW, yoke, axial

• Dimensions (L x W x H in mm): 2.5 x 2 x 2.7

• Radiant sensitive area (in mm2): 0.23

• High radiant sensitivity

• Daylight blocking filter matched with 870 nm to 950 nm emitters

•Fast response times

•Angle of half sensitivity: ϕ = ± 15°

•Package matches with IR emitter series TSMF1000

•Floor life: 168 h, MSL 3, acc. J-STD-020

• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS

•High speed detector for infrared radiation

•Infrared remote control and free air data transmissionsystems, e.g. in combination with TSFFxxxx series IR emitters

PRODUCT SUMMARY
COMPONENT		Ira (mA)		ϕ (deg)		λ0.5 (nm)
TEMD1000	12			± 15		790 to 1050
TEMD1020	12			± 15		790 to 1050
TEMD1030	12			± 15		790 to 1050
TEMD1040	12			± 15		790 to 1050
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE		PACKAGING		REMARKS		PACKAGE FORM
TEMD1000		Tape and reel	MOQ: 1000 pcs, 1000 pcs/reel			Reverse gullwing
TEMD1020		Tape and reel	MOQ: 1000 pcs, 1000 pcs/reel			Gullwing
TEMD1030		Tape and reel	MOQ: 1000 pcs, 1000 pcs/reel			Yoke
TEMD1040		Bulk	MOQ: 1000 pcs, 1000 pcs/bulk			Axial leads
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER		TEST CONDITION			SYMBOL	VALUE		UNIT
Reverse voltage					VR	60		V
Power dissipation		Tamb ≤ 25 °C			PV	75		mW
Junction temperature					Tj	100		°C
Operating temperature range					Tamb	- 40 to + 85		°C
Storage temperature range					Tstg	- 40 to + 100		°C
Soldering temperature		t ≤ 5 s			Tsd	< 260		°C
Note
Tamb = 25 °C, unless otherwise specified
www.vishay.com	For technical questions, contact: [e-mail]					Document Number: 81564
436						Rev. 2.1, 08-Sep-08

TEMD1000, TEMD1020, TEMD1030, TEMD1040

	Silicon PIN Photodiode, RoHS Compliant					Vishay Semiconductors
BASIC CHARACTERISTICS
PARAMETER			TEST CONDITION	SYMBOL	MIN.		TYP.	MAX.	UNIT
Forward voltage			IF = 50 mA	VF			1	1.3	V
Breakdown voltage			IR = 100 µA, E = 0	V(BR)	60				V
Reverse dark current			VR = 10 V, E = 0	Iro			1	10	nA
Diode capacitance		VR = 5 V, f = 1 MHz, E = 0		CD			1.8		pF
		E	= 1 mW/cm2, λ= 870 nm,
		e	VR = 5 V	Ira			10		µA
Reverse light current
		E	= 1 mW/cm2, λ= 950 nm,
		e	VR = 5 V	Ira	5		12		µA
Temperature coefficient of Ira			VR = 5 V, λ = 870 nm,	TKIra			0.2		%/K
Absolute spectral sensitivity			VR = 5 V, λ = 870 nm	s(λ)			0.60		A/W
			VR = 5 V, λ = 950 nm	s(λ)			0.55		A/W
Angle of half sensitivity				ϕ			± 15		deg
Wavelength of peak sensitivity				λp			940		nm
Range of spectral bandwidth				λ0.5			790 to 1050		nm
Rise time		VR = 10 V, RL = 50 Ω, λ = 820 nm		tr			4		ns
Fall time		VR = 10 V, RL = 50 Ω, λ = 820 nm		tf			4		ns

Note

Tamb = 25 °C, unless otherwise specified

BASIC CHARACTERISTICS

Tamb = 25 °C, unless otherwise specified

rrent (nA)	1000
	100
Dark Cu
Reverse	10						VR = 10 V
-
ro
I
	1
	20		40		60		80			100

94 8427 Tamb - Ambient Temperature (°C)

Fig. 1 - Reverse Dark Current vs. Ambient Temperature

Current	1.4
	1.2						VR = 5 V
Lighterse
						λ = 950 nm
Rev	1.0
ve
- Relati	0.8
ra, rel
I	0.6
			20		40				60			80		100
	0
94 8416			Tamb - Ambient Temperature (°C)

Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature

Document Number: 81564	For technical questions, contact: [e-mail]	www.vishay.com
Rev. 2.1, 08-Sep-08		437

TEMD1000, TEMD1020, TEMD1030, TEMD1040

Vishay Semiconductors

Silicon PIN Photodiode, RoHS Compliant

	100
rrent (µA)	10
Light Cu
erse	1.0		VCE = 5 V
			λ = 950 nm
- Rev
ra
I
	0.1
	0.01	0.1	1	10

16055 Ee - Irradiance (mW/cm²)

Fig. 3 - Reverse Light Current vs. Irradiance

(pF)	8
	6
Capacitance									E = 0
									f = 1 MHz
Diode-	4
	2
D
C	0
	0.1		1						10						100
94 8430			VR- Reverse Voltage (V)

Fig. 4 - Diode Capacitance vs. Reverse Voltage

PRECAUTIONS FOR USE

1. Over-current-proof

Customer must apply resistors for protection, otherwise slight voltage shift will cause big current change (burn out will happen).

2. Storage

2.1Storage temperature and rel. humidity conditions are: 5 °C to 35 °C, R.H. 60 %.

2.2Floor life must not exceed 168 h, acc. to JEDEC level 3, J-STD-020.

Once the package is opened, the products should be used within a week. Otherwise, they should be kept in a damp proof box with desiccant.

Considering tape life, we suggest to use products within one year from production date.

2.3If opened more than one week in an atmosphere 5 °C to 35 °C, R.H. 60 %, devices should be treated at 60 °C

± 5 °C for 15 h.

2.4If humidity indicator in the package shows pink color (normal blue), then devices should be treated with the

same conditions as 2.3.

		1.2
	ity
	Sensiv	1.0
	Spectral	0.6
		0.8
	e
	Relativ	0.4
	-
	rel	0.2
	λ)
	S(

0.0
750		850	950	1050	1150
94 8426		λ - Wavelength (nm)

Fig. 5 - Relative Spectral Sensitivity vs. Wavelength

				0°	10°	20°
						30°
e Sensitivity						40°	Displacement
	1.0
	0.9					50°
- Relativ	0.8					60°	Angular
rel						70°	-
S	0.7						ϕ
						80°
	0.6	0.4	0.2	0
	94 8248

Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement

REFLOW SOLDER PROFILE

	260
	240
	220
(°C)	200				+ 5 °C/s	- 5 °C/s
	180
ure
	160
Temperat
	140
	120		60 s to 120 s			5 s
	100
	80
	60
	0	20	40	60	80 100 120 140 160 180 200 220
17172					Time (s)

Fig. 7 - Lead Tin (SnPb) Reflow Solder Profile

www.vishay.com	For technical questions, contact: [e-mail]	Document Number: 81564
438		Rev. 2.1, 08-Sep-08