Datasheet TEMD1000 Datasheet (Telefunken)

Silicon PIN Photodiode

Description

TEMD1000 is a high speed silicon PIN photodiode
molded in SMT package with dome lens.
Due to its integrated Daylight filter the device is sensi­tive for IR radiation only.
High on axis sensitivity is provided by a viewing angle
of ± 15°.

Features

D

Extra fast response times

D

Radiant sensitive area A=0.25mm

D

Daylight filter

D

SMD with terminals Z–bend

D

Especially for surface mounting on printed board

D

Angle of half sensitivity ϕ = ± 15

2

°

TEMD1000

Vishay Telefunken

15 970

Applications

High speed detector for SMT
IR Detector for Daylight application

Absolute Maximum Ratings

T

= 25_C

amb

Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Power Dissipation T
Junction Temperature T
Storage Temperature Range T
Operating Temperature Range T
Soldering Temperature t x 5 s T

x 25 °C P

amb

stg
stg

sd

R
V

j

60 V
75 mW

100
–40...+85
–40...+85

260

°

C

°

C

°

C

°

C

Document Number 81564
Rev. 5, 17-Feb-00

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TEMD1000

y

Vishay Telefunken

Basic Characteristics

T

= 25_C

amb

Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 50 mA V
Breakdown Voltage IR = 100 mA, E = 0 V
Reverse Dark Current VR = 10 V, E = 0 I
Diode Capacitance VR = 5 V, f = 1 MHz, E = 0 C
Reverse Light Current Ee = 1 mW/cm2,

l

= 870 nm, V

= 5 V

R

Ee = 1 mW/cm2,

l

= 950 nm, VR = 5 V

Temp. Coefficient of I

ra

VR = 5 V, l = 870 nm TK

F

(BR)

ro

D

I

ra

I

ra

Ira

60 V

5 12

Absolute Spectral Sensitivity VR = 5 V, l = 870 nm s(l) 0.60 A/W

VR = 5 V, l = 950 nm s(l) 0.55 A/W
Angle of Half Sensitivity ϕ ±15 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Rise Time VR = 10 V, RL = 50 W,

l

= 820 nm

Fall Time VR = 10 V, RL = 50 W,

l

p

l

0.5

t

r

t

f

l = 820 nm

1.0 1.3 V

1 10 nA

1.8 pF
10

m

m

0.2 %/K

900 nm

840...1050 nm
4 ns

4 ns

A

A

Typical Characteristics (T

1000

100

10

ro

I – Reverse Dark Current ( nA )

1

20 40 60 80

T

94 8427

Figure 1. Reverse Dark Current vs. Ambient Temperature

– Ambient Temperature ( °C )

amb

VR=10V

= 25_C unless otherwise specified)

amb

100

1.4

1.2

1.0

0.8

ra rel

I – Relative Reverse Light Current

0.6
020406080

94 8416

Figure 2. Relative Reverse Light Current vs.

T

VR=5V

l

=950nm

– Ambient Temperature ( °C )

amb

Ambient Temperature

100

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Document Number 81564

TEMD1000

Vishay Telefunken

100

m

10

VR=5V

l

1.0

ra

I – Reverse Light Current ( A )

0.1

0.01 0.1 1

16055

Ee – Irradiance ( mW/cm2 )

=950nm

Figure 3. Reverse Light Current vs. Irradiance

8

6

E=0

f=1MHz

4

1.2

1.0

0.8

0.6

0.4

rel

0.2

l

S ( ) – Relative Spectral Sensitivity

12786

0

750 850 950 1050

l

– Wavelength ( nm )

1150

10

Figure 5. Relative Spectral Sensitivity vs. Wavelength

0°

10°20

°

30°

1.0

0.9

40°

50°

2

D

C – Diode Capacitance ( pF )

94 8430

0

0.1 1 10
VR – Reverse Voltage ( V )

100

Figure 4. Diode Capacitance vs. Reverse Voltage

0.8

rel

S – Relative Sensitivity

0.7

0.4 0.2 0 0.2 0.4

0.6

94 8248

Figure 6. Relative Radiant Sensitivity vs.

Angular Displacement

60°
70°

80°

0.6

Document Number 81564
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TEMD1000

Vishay Telefunken

Dimensions in mm

16159

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Document Number 81564

TEMD1000

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Document Number 81564
Rev. 5, 17-Feb-00

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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