VISHAY TEKT5400S Technical data
Silicon NPN Phototransistor
Description
TEKT5400S is a high sensitive silicon NPN epitaxial
planar phototransistor in a flat side view plastic
package.A small recessed lens provides a high
sensitivity in a low profile case.
The molded package itself is an IR filter, spectrum
matched to IR emitters (λp > 850nm or 950 nm).
TEKT5400S
Vishay Semiconductors
Features
High photo sensitivity
Daylight filter
Molded package with side view lens
Angle of half sensitivity ϕ = ± 37°
Matched with IR–Emitter TSKS5400S
16733
Applications
Detector in electronic control and drive circuits
Order Instruction
Ordering Code Remarks
TEKT5400S 2000 pcs in Plastic Bags
TEKT5400S–ASZ 2.54 mm Pin distance (lead to lead), height of taping 16 mm
Absolute Maximum Ratings
T
= 25°C
amb
Parameter Test Conditions Symbol Value Unit
Collector Emitter Voltage V
Emitter Collector Voltage V
Collector Current I
Peak Collector Current tp/T = 0.5, tp 10 ms I
Total Power Dissipation T
Junction Temperature T
Storage Temperature Range T
Operating Temperature T
Soldering Temperature t 5 s T
Thermal Resistance Junction/Ambient R
40 °C P
amb
CEO
ECO
C
CM
tot
j
stg
amb
sd
thJA
70 V
7 V
100 mA
200 mA
150 mW
100 °C
–40...+100 °C
–40...+85 °C
260 °C
400 K/W
Rev. 1, 24–May–02
www.vishay.comDocument Number 81569
1 (7)
TEKT5400S
Vishay Semiconductors
Basic Characteristics
T
= 25°C
amb
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector Emitter Voltage IC = 1 mA V
Emitter Collector Voltage IE = 100 µA V
Collector Dark Current VCE = 20 V, E = 0 I
Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E = 0 C
Collector Light Current ECE = 5 V, Ee = 1 mW/cm2,
CEO
ECO
CEO
CEO
I
ca
λp = 950 nm
Angle of Half Sensitivity ϕ ±37 deg
Wavelength of Peak Sensitivity λ
Range of Spectral Bandwidth λ
Collector Emitter Saturation
Voltage
Ee = 1 mW/cm2,
λ = 950 nm, IC = 0.1 mA
Turn–On Time VS = 5 V, IC = 5 mA,
V
p
0.5
CEsat
t
on
RL = 100 Ω
Turn–Off Time VS = 5 V, IC = 5 mA,
t
off
RL = 100 Ω
Cut–Off Frequency VS = 5 V, IC = 5 mA,
f
c
RL = 100 Ω
70 V
7 V
1 100 nA
6 pF
2 4 mA
920 nm
850...980 nm
0.3 V
6 µs
5 µs
110 kHz
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2 (7) Rev. 1, 24–May–02
Document Number 81569
TEKT5400S
Vishay Semiconductors
Typical Characteristics (T
200
180
160
140
120
100
80
60
40
tot
20
P –Total Power Dissipation (mW)
0
0 102030405060708090100
16719
T
– Ambient Temperature ( °C )
amb
Figure 1. Total Power Dissipation vs.
Ambient Temperature
4
10
3
10
2
10
VCE=10V
R
thJA
= 25C, unless otherwise specified)
amb
10
TEKT5400S
1
0.1
ca
I – Collector Light Current ( mA )
0.01
0.01 0.1 1
16707
Ee – Irradiance ( mW/cm2 )
Figure 4. Relative Radiant Intensity vs.
Angular Displacement
10
=950nm
1
VCE=5V
=950nm
Ee=1mW/cm
0.5mW/cm
10
2
2
1
10
CEO
I – Collector Dark Current ( nA )
0
94 8249
10
20
40 60 80
T
– Ambient Temperature ( °C )
amb
100
Figure 2. Collector Dark Current vs. Ambient Temperature
2.0
1.8
1.6
VCE=5V
Ee=1mW/cm
2
=950nm
1.4
1.2
1.0
ca rel
I – Relative Collector Current
0.8
0.6
100
94 8239
0
20 40 60 80
T
– Ambient Temperature ( °C )
amb
Figure 3. Relative Collector Current vs.
Ambient Temperature
0.2mW/cm
ca
I – Collector Light Current ( mA )
0.1mW/cm
0.1
0.1 1 10
16718
VCE – Collector Emitter Voltage ( V )
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
20
16
f=1MHz
12
8
4
CEO
C – Collector Emitter Capacitance ( pF )
0
0.1 1 10
94 8247
VCE – Collector Emitter Voltage ( V )
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
2
2
100
100
Rev. 1, 24–May–02
www.vishay.comDocument Number 81569
3 (7)
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