The TDSL51.0 series are 13 mm character seven
segment low current LED displays in a very compact
package.
The displays are designed for a viewing distance up to
7 meters and available in high efficiency red. The grey
package surface and the evenly lighted untinted
segments provide an optimum on-off contrast.
All displays are categorized in luminous intensity
groups. That allows users to assemble displays with
uniform appearence.
Typical applications include instruments, panel
meters, point-of-sale terminals and household
equipment.
TDSL51.0
Vishay Semiconductors
96 11508
Features
D
Low power consumption
D
Suitable for DC and multiplex operation
D
Evenly lighted segments
D
Grey package surface
D
Untinted segments
D
Luminous intensity categorized
D
Wide viewing angle
Applications
Panel meters
Test- and measure- equipment
Point-of-sale terminals
Control units
Rev. A2, 05-Oct-00
www.vishay .comDocument Number 83123
1 (6)
TDSL51.0
yg
gg
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25°C, unless otherwise specified
amb
TDSL5150 /TDSL5160
ParameterTest ConditionsSymbolValueUnit
Reverse voltage per segmentV
DC forward current per segmentI
Peak forward current per segmentI
Surge forward current per segmenttp ≤ 10 ms (non repetitive)I
Power dissipationT
Junction temperatureT
Operating temperature rangeT
Storage temperature rangeT
Soldering temperaturet ≤ 3 sec, 2mm below
Thermal resistance LED junction/ambientR
≤ 45°CP
amb
seating plane
R
F
FM
FSM
V
amb
stg
T
sd
thJA
6V
15mA
45mA
100mA
320mW
j
100
–40 to + 85
–40 to + 85
260
°
C
°
C
°
C
°
C
180K/W
Optical and Electrical Characteristics
T
= 25°C, unless otherwise specified
amb
High efficiency red (TDSL5150 , TDSL5160 )
ParameterTest ConditionsTypeSymbolMinTypMaxUnit
Luminous intensity per segment
(digit average)
1)
Dominant wavelengthIF = 2 mA
Peak wavelengthIF = 2 mA
Angle of half intensityIF = 2 mAϕ±50deg
Forward voltage per segmentIF = 2 mAV
Reverse voltage per segmentIR = 10 mAV
Junction capacitanceVR = 0, f = 1 MHzC
1)
I
and IV groups are meanvalues of segments a to g
Vmin
IF = 2 mAI
IF = 5 mAI
IF = 20 mA, tp/T =0.25I
IF = 20 mAV
280400
V
V
V
l
d
l
p
F
F
R
j
1600
2000
612625nm
635nm
1.82.4V
2.73V
620V
30pF
mmm
cd
cd
cd
www.vishay .comDocument Number 83123
2 (6)
Rev. A2, 05-Oct-00
TDSL51.0
Vishay Semiconductors
Typical Characteristics (T
500
400
300
200
V
100
P – Power Dissipation ( mW )
0
020406080
T
95 11483
– Ambient Temperature ( °C )
amb
= 25_C, unless otherwise specified)
amb
100
Figure 1. Power Dissipation vs. Ambient Temperature
30
25
20
15
10
F
I – Forward Current ( mA )
5
95 11484
0
020406080
T
– Ambient Temperature ( °C )
amb
100
Figure 2. Forward Current vs. Ambient Temperature
0°
10°20
°
30°
100
High Efficiency Red
10
1
F
I – Forward Current ( mA )
tp/T=0.001
t
=10ms
p
95 10050
0.1
01234
V
– Forward Voltage ( V )
F
Figure 4. Forward Current vs. Forward Voltage
2.0
High Efficiency Red
1.6
1.2
0.8
0.4
v rel
I – Relative Luminous Intensity
95 10051
IF=2mA
0
0
20406080
T
– Ambient Temperature ( °C )
amb
Figure 5. Rel. Luminous Intensity vs.
Ambient Temperature
2.4
High Efficiency Red
2.0
5
100
1.0
0.9
0.8
0.7
v rel
I – Relative Luminous Intensity
0.40.200.20.4
0.6
95 10082
Figure 3. Rel. Luminous Intensity vs.
Angular Displacement
Rev. A2, 05-Oct-00
0.6
40°
50°
60°
70°
80°
1.6
1.2
0.8
0.4
v rel
I – Relative Luminous Intensity
0
102050100200
95 10321
0.50.20.10.050.021
Figure 6. Rel. Lumin. Intensity vs.
Forw. Current/Duty Cycle
500
www.vishay .comDocument Number 83123
I
F
(mA)
/T
t
p
3 (6)
TDSL51.0
Vishay Semiconductors
100
High Efficiency Red
10
1
0.1
v rel
I – Relative Luminous Intensity
95 10061
0.01
0.1110
IF – Forward Current ( mA )
100
Figure 7. Relative Luminous Intensity vs. Forward Current
Dimensions in mm
1.2
High Efficiency Red
1.0
0.8
0.6
0.4
0.2
v rel
I – Relative Luminous Intensity
95 10040
0
590610630650670
l
– Wavelength ( nm )
690
Figure 8. Relative Luminous Intensity vs. Wavelength
95 11344
www.vishay .comDocument Number 83123
4 (6)
Rev. A2, 05-Oct-00
Pin connections
109876
a
f
g
e
d
TDSL51.0
Vishay Semiconductors
1e
2d
3A (K)
b
c
DP
4c
5DP
6b
7a
8A (K)
9f
10g
12 345
95 10896
Rev. A2, 05-Oct-00
www.vishay .comDocument Number 83123
5 (6)
TDSL51.0
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.