VISHAY TCUT1200 Technical data

TCUT1200

Vishay Semiconductors

Subminiature Dual-Channel Transmissive Optical Sensor with Phototransistor Outputs, RoHS Compliant, Released for Lead (Pb)-free Solder Process

Description

The TCUT1200 is a compact transmissive sensor that includes an infrared emitter and two phototransistor detectors, located face-to-face in a surface-mount package.

Features

• Package type: Surface-mount

• Detector type: Phototransistor

• Dimensions: L 5 mm x W 4 mm x H 4 mm

• Gap: 2 mm

• Aperture: 0.3 mm

• Channel distance (center to center): 0.8 mm

• Typical output current under test: I

= 0.5 mA

C

• Emitter wavelength: 950 nm

• Lead (Pb)-free soldering released

• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC

• Minimum order quantity: 2000 pcs, 2000 pcs/reel

e4

Applications

• Accurate position sensor for encoder

• Detection of motion direction

• Computer mouse and trackballs

A Coll

Cath

E

19151

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Coupler

Parameter Test condition Symbol Val ue Unit

≤ 25 °C

Power dissipation

Ambient temperature range

Storage temperature range

Soldering temperature in accordance with fig. 13

Input (Emitter)

Parameter Test condition Symbol Val ue Unit

Reverse voltage

Forward current

Forward surge current

Power dissipation

Output (Detector)

Parameter Test condition Symbol Val ue Unit

Collector emitter voltage

Emitter collector voltage

Collector current

Power dissipation

T

amb

≤ 10 µs I

t

p

≤ 25 °C P

T

amb

T

≤ 25 °C P

amb

P150mW

T

V

amb

T

V

I

FSM

CEO

ECO

I

stg

sd

R

F

V

C

V

- 40 to + 85 °C

- 40 to + 100 °C

260 °C

5V

25 mA

100 mA

75 mW

70 V

7V

20 mA

75 mW

Document Number 83755

Rev. 2.2, 13-Mar-07

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TCUT1200

Vishay Semiconductors

200

Sensor

Emitter/Detector

5025

T

- Ambient Temperature (°C)

amb

100

75

P - Power Dissipation (mW)

16538

150

100

50

0

Figure 1. Power Dissipation Limit vs. Ambient Temperature

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Coupler

Paramete r Test condition Symbol Min Ty p. Max Unit

= 5 V, IF = 15 mA I

Collector current per channel

Collector emitter saturation voltage

Input (Emitter)

Paramete r Test condition Symbol Min Ty p. Max Unit

Forward voltage

Reverse current

Junction capacitance

V

CE

I

= 15 mA, IC = 0.05 mA V

F

= 15 mA V

I

F

= 5 V I

V

R

= 0 V, f = 1 MHz C

V

R

C

CEsat

F

R

j

300 500 µA

0.4 V

1.2 1.5 V

10 µA

50 pF

Output (Detector)

Paramete r Test condition Symbol Min Ty p. Max Unit

Collector emitter voltage

Emitter collector voltage

Collector dark current

Switching Characteristics

Paramete r Test condition Symbol Min Ty p. Max Unit

Rise time I

Fall time I

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2

= 1 mA V

I

C

= 100 µA V

I

E

= 25 V, IF = 0, E = 0 I

V

CE

= 0.3 mA, VCE = 5 V,

C

= 1000 Ω (see figure 3)

R

L

= 0.3 mA, VCE = 5 V,

C

= 1000 Ω (see figure 3)

R

L

CEO

ECO

CEO

t

70 V

7V

10 100 nA

r

f

20.0 150 µs

30.0 150 µs

Document Number 83755

Rev. 2.2, 13-Mar-07

I

C

(

)

366

C

S

I

F

0

F

+ 5 V

I

C

R G = 50 Ω t

p

= 20

T

t p = 1 ms

Channel I

Channel II

50 Ω 1000 Ω

16536

Figure 2. Test Circuit for tr and t

Typical Characteristics

T

= 25 °C, unless otherwise specified

amb

adjusted by I

Oscilloscope

RL 1 M C

f

L

F

20 pF

t

p

t

d

t

r

t

(= t + t )

on

96 11698

I

F

0

I

C

100 %

90 %

10 %

0

t

r

t

d

t

on

pulse duration delay time rise time turn-on time

r

d

Figure 3. Switching Times

TCUT1200

Vishay Semiconductors

t

p

t

f

t

s

t

off

t

s

t

f

t

(= ts+tf)turn-off time

off

t

storage time fall time

1000

10

V CE= 5 V

100

mA

10

urrent

1

F

I - Forward

13660

0.1 0

0.2

0.60.4

0.8 2.0

1.0

V

- Forward Voltage (V)

F

1.2

1.4

1.6

1.8

Figure 4. Forward Current vs. Forward Voltage

0.18 I F = 15 mA

0.16

0.14

0.12

0.10

aturation Voltage (V)

0.08

I

C

= 50 µA

1

0.1

0.01

C

I - Collector Current (mA)

0.001

13665

0.1

1

I

- Forward Current (mA)

F

10

100

Figure 6. Collector Current vs. Forward Current

1.3

I F = 15 mA

1.2

1.1

1.0

0.06

0.04

oll. Emitter

0.02

0

CEsat

- 40

V -

1

2

- Ambient Temperature (°C)

T

amb

40

200- 20

60

100

80

Figure 5. Collector Emitter Saturation Voltage vs.

F

0.9

V - Forward Voltage (V)

13661

0.8

- 40

- 20

T

amb

20

0

40

- Ambient Temperature (°C)

60

100

80

Figure 7. Forward Voltage vs. Ambient Temperature

Ambient Temperature

Document Number 83755

Rev. 2.2, 13-Mar-07

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