VISHAY TCSS1100, TCSS2100 Technical data
Transmissive Optical Sensor
Description
This device has a compact construction where the
emitting-light sources and the detectors are located
face to face on the same optical axes.
The operating wavelength is 950 nm. The detector
consists of a photologic-IC with Schmitt trigger and
open collector output.
Applications
D
Detection of opaque material, documents etc.
D
Paper position sensor in copy machines
D
Position sensor for shaft encoder
TCSS1100/ TCSS2100
Vishay Semiconductors
B)
A)
15132
Features
+
95 10821
V
O
D
Output:
‘LOW’ when infrared beam is not interrupted
D
Inverter-open collector
D
TTL compatible
D
Built-in voltage regulator
D
Plastic polycarbonate case, protected against
ambient light
D
No adjustment necessary
D
Two package variations
+
_
7.6
0.3”
Top view
Handling Precautions
Connect a capacitor C of more than 100 nF between VS1 and ground in order to stabilize power supply voltage!
Order Instruction
Ordering Code Resolution (mm) / Aperture (mm) Remarks
TCSS1100
TCSS2100
A)
B)
0.6 / 1.0 No mounting flags
0.6 / 1.0 With two mounting flags
Rev. A4, 08–Jun–99
www.vishay.comDocument Number 83761
1 (7)
TCSS1100/ TCSS2100
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Vishay Semiconductors
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10ms I
Power dissipation T
Junction temperature T
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Supply voltages V
Output current I
Power dissipation T
Junction temperature T
≤ 25°C P
amb
≤ 25°C P
amb
F
FSM
S1
V
S2
O
R
6 V
60 mA
3 A
V
j
100 mW
100
°
C
6.5 V
18 V
20 mA
V
j
250 mW
100
°
C
Coupler
Parameter Test Conditions Symbol V alue Unit
Total power dissipation T
Ambient temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 5 s T
Electrical Characteristics (T
≤ 25°C P
amb
= 25°C)
amb
tot
amb
stg
sd
250 mW
–25 to +85
–40 to +100
260
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA V
Junction capacitance VR = 0, f = 1 MHz C
F
j
1.25 1.6 V
50 pF
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Supply voltage range V
S1
V
S2
4.75 5.25 V
4.0 16 V
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Supply current VS1 = 16 V I
Output current VS1 = VS2 = 16 V, IF = 0 I
Input threshold current VS1 = 5 V I
Hysteresis VS1 = 5 V I
Foff/IFon
Output voltage IOL = 16 mA, IF ≥ ITF, VS1 = 5 V V
Switching frequency IF 3x IFT, VS1 = VS2 = 5 V,
RL = 1 k
W
OH
f
S1
FT
OL
sw
3 5 mA
5 10 mA
80 %
0.15 0.4 V
200 kHz
°
C
°
C
°
C
1
m
A
www.vishay.com
2 (7) Rev. A4, 08–Jun–99
Document Number 83761
TCSS1100/ TCSS2100
S1 S2 F FT L
(g)
Vishay Semiconductors
Switching Characteristics
Parameter Test Conditions Symbol Typ. Unit
Rise time VS1 = VS2 = 5 V, IF = 3 x IFT, RL = 1 kW (see figure 1) t
Turn-on time
Fall time t
Turn-off time t
r
t
on
f
off
50.0 ns
1.0
20.0 ns
3.0
m
s
m
s
Rev. A4, 08–Jun–99
www.vishay.comDocument Number 83761
3 (7)
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