VISHAY TCRT1000 Technical data
TCRT1000/ TCRT1010
Vishay Semiconductors
Reflective Optical Sensor with Transistor Output
Description
The TCRT1000/ TCRT1010 have a compact
construction where the emitting-light source and the
detector are arranged in the same direction to sense
the presence of an object by using the reflective
IR-beam from the object.
The operating wavelength is 950 nm. The detector
consists of a phototransistor.
Applications
A)
B)
D
Optoelectronic scanning and switching devices
i.e., index sensing, coded disk scanning etc.
(optoelectronic encoder assemblies for
transmissive sensing).
Features
D
Compact construction in spacing of 0.1
D
No setting efforts
D
High signal outputs
D
Low temperature coefficient
D
Detector provided with optical filter
D
Current Transfer Ratio (CTR) of typical 2.5%
ACEC
Top view
Order Instruction
Ordering Code Sensing Distance Remarks
TCRT1000
TCRT1010
A)
B)
1 mm
1 mm
14867
96 11971
Rev. A3, 27–May–99
www.vishay.comDocument Number 83752
1 (7)
TCRT1000/ TCRT1010
Vishay Semiconductors
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10 ms I
Power dissipation T
Junction temperature T
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Power dissipation T
Junction temperature T
≤ 25°C P
amb
≤ 25°C P
amb
R
F
FSM
V
CEO
ECO
C
V
5 V
50 mA
3 A
100 mW
j
100
°
C
32 V
5 V
50 mA
100 mW
j
100
°
C
Coupler
Parameter Test Conditions Symbol V alue Unit
Total power dissipation T
Ambient temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 5 s T
≤ 25°C P
amb
tot
amb
stg
sd
200 mW
–55 to +85
–55 to +100
260
°
C
°
C
°
C
www.vishay.com
2 (7) Rev. A3, 27–May–99
Document Number 83752
TCRT1000/ TCRT1010
Vishay Semiconductors
Electrical Characteristics (T
amb
= 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA V
F
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA V
Emitter collector voltage IE = 100 mA V
Collector dark current VCE = 20 V, IF = 0, E = 0 I
CEO
ECO
CEO
32 V
5 V
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
ICX
V
CEsat
1)
I
C
2)
0.3 0.5 mA
1)
Collector current VCE = 5 V, IF = 20 mA,
d = 1 mm (figure 1)
Cross talk current VCE = 5 V, IF = 20 mA
(figure 1)
Collector emitter saturation voltage
1)
Measured with the ‘Kodak neutral test card’, white side with 90% diffuse reflectance
2)
Measured without reflecting medium
IF = 20 mA, IC = 0.1 mA,
d = 1 mm (figure 1)
1.25 1.6 V
200 nA
1
0.3 V
m
A
Emitter
Rev. A3, 27–May–99
~
~
~
d
ACEC
~
~
~
Figure 1. Test circuit
Reflecting medium
(Kodak neutral test card)
Detector
95 10893
www.vishay.comDocument Number 83752
3 (7)
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