VISHAY TCMT1102, TCMT1101, TCMT1100, TCMT4100, TCMT1109 Datasheet

TCMT11.. Series

Optocoupler with Phototransistor Output

Description

The TCMT11.. Series consist of a phototransistor
optically coupled to a gallium arsenide infrared­emitting diode in an 4- lead up to 16- lead plastic
Miniflat package.
The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.

Applications

Programmable logic controllers, modems, answering
machines, general applications

Coll. Emitter

Features

Vishay Semiconductors

16467

9

D

Low profile package (half pitch)

D

AC Isolation test voltage V

D

Low coupling capacitance of typical 0.3 pF

D

Current Transfer Ratio (CTR) selected into groups

D

Low temperature coefficient of CTR

D

Wide ambient temperature range

D

Underwriters Laboratory (UL) 1577 recognized,
file number E-76222

D

CSA (C-UL) 1577 recognized
file number E- 76222 - Double Protection

D

Coupling System M

= 3.75 kV

io

RMS

12 8

Anode Cath.

4 PIN

16 PIN

C

Order Instruction

Ordering Code CTR Ranking Remarks
TCMT1 100 50 to 600% 4 Pin = Single channel
TCMT1101 40 to 80% 4 Pin = Single channel
TCMT1102 63 to 125% 4 Pin = Single channel
TCMT1103 100 to 200% 4 Pin = Single channel
TCMT1104 160 to 320% 4 Pin = Single channel
TCMT1105 50 to 150% 4 Pin = Single channel
TCMT1106 100 to 300% 4 Pin = Single channel
TCMT1107 80 to 160% 4 Pin = Single channel
TCMT1108 130 to 260% 4 Pin = Single channel
TCMT1109 200 to 400% 4 Pin = Single channel
TCMT4100 50 to 600% 16 Pin = Quad channel

16281

Rev. A2, 15–Dec–00

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TCMT11.. Series

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Absolute Maximum Ratings

Input (Emitter)

Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10 ms I
Power dissipation T
Junction temperature T

Output (Detector)

Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Peak collector current tp/T = 0.5, tp ≤ 10 ms I
Power dissipation T
Junction temperature T

≤ 25°C P

amb

≤ 25°C P

amb

R

F

FSM

V

CEO
ECO

C

CM

V

6 V

60 mA

1.5 A

100 mW

j

125

°

C

70 V

7 V

50 mA
100 mA
150 mW

j

125

°

C

Coupler

Parameter Test Conditions Symbol V alue Unit
AC isolation test voltage (RMS) VIO
Total power dissipation T
Operating ambient temperature

range
Storage temperature range T
Soldering temperature T

1)

Related to standard climate 23/50 DIN 50014

≤ 25°C P

amb

T

tot

amb

stg

sd

1)

3.75 kV
250 mW

–40 to +100

–40 to +100

235

°

C

°

C

°

C

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Document Number 83510

TCMT11.. Series

C F

Vishay Semiconductors

Electrical Characteristics (T

amb

= 25°C)

Input (Emitter)

Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA V
Junction capacitance VR = 0 V, f = 1 MHz C

Output (Detector)

Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 100 mA V
Emitter collector voltage IE = 100 mA V
Collector dark current VCE = 20 V, IF = 0, E = 0 I

Coupler

Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter saturation

voltage
Cut-off frequency IF = 10 mA, VCE = 5 V,

Coupling capacitance f = 1 MHz C

IF = 10 mA, IC = 1 mA V

RL = 100

W

F

j

CEO
ECO

CEO

CEsat

f

c

k

1.25 1.6 V
50 pF

70 V

7 V

100 nA

0.3 V

100 kHz

0.3 pF

Current Transfer Ratio (CTR)

Parameter Test Conditions Type Symbol Min. Typ. Max. Unit

IC/I

F

VCE = 5 V, IF = 5 mA TCMT1100 CTR 0.5 6.0
VCE = 5 V, IF = 10 mA TCMT1101 CTR 0.4 0.8
VCE = 5 V, IF = 10 mA TCMT1102 CTR 0.63 1.25
VCE = 5 V, IF = 10 mA TCMT1103 CTR 1.0 2.0
VCE = 5 V, IF = 10 mA TCMT1104 CTR 1.6 3.2
VCE = 5 V, IF = 5 mA TCMT1105 CTR 0.5 1.5
VCE = 5 V, IF = 5 mA TCMT1106 CTR 1.0 3.0
VCE = 5 V, IF = 5 mA TCMT1107 CTR 0.8 1.6
VCE = 5 V, IF = 5 mA TCMT1108 CTR 1.3 2.6
VCE = 5 V, IF = 5 mA TCMT1109 CTR 2.0 4.0
VCE = 5 V, IF = 5 mA TCMT4100 CTR 0.5 6.0

Rev. A2, 15–Dec–00

www.vishay.comDocument Number 83510

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TCMT11.. Series

S C L

(g)

S F L

(g)

Vishay Semiconductors

Switching Characteristics

Parameter T est Conditions Symbol T yp. Unit
Delay time VS = 5 V, IC = 2 mA, RL = 100 W (see figure 1) t
Rise time
Fall time t
Storage time t
Turn-on time t
Turn-off time t
Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kW (see figure 2) t
Turn-off time

d

t

r
f

s
on
off
on

t

off

3.0

3.0

4.7

0.3

6.0

5.0

9.0

18.0

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

W

+ 5 V

= 2 mA;

I

C

Channel I

Channel II

0

R

G

t

p

T

t

p

95 10804

I

F

= 50 W

= 0.01

= 50 ms

50

I

F

W

100

Figure 1. Test circuit, non-saturated operation

W

+ 5 V

I

C

Channel I

Channel II

0

R

= 50 W

G

t

p

= 0.01

T

t

= 50 ms

p

95 10843

I

F

IF = 10 mA

50

W

1 k

adjusted through
input amplitude

Oscilloscope

R

= 1 M

W

L

C

= 20 pF

L

Oscilloscope

> 1 M

R
CL < 20 pF

W

L

I

F

0

I

C

100%

90%

10%

0

t

r

t

d

t

on

t

p

t

d

t

r

t

(= td + tr) turn-on time

on

pulse duration
delay time
rise time

Figure 3. Switching times

96 11698

t

p

t

t

s

f

t

off

t

s

t

f

t

(= ts + tf) turn-off time

off

t

t

storage time
fall time

Figure 2. Test circuit, saturated operation

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4 (12) Rev. A2, 15–Dec–00

Document Number 83510