Vishay ST180CPbF Series Data Sheet

TO-200AB (A-PUK)

PRODUCT SUMMARY

I

T(AV)

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 350 A

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case TO-200AB (A-PUK)

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

350 A

• Controlled DC power supplies

• AC controllers

ST180CPbF Series

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 5000

60 Hz 5230

50 Hz 125

60 Hz 114

Typical 100 µs

350 A

55 °C

660 A

25 °C

400 to 2000 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

ST180C..C

V

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

16 1600 1700

18 1800 1900

20 2000 2100

DRM/VRRM

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

NON-REPETITIVE PEAK VOLTAGE

V

, MAXIMUM

RSM

V

I

DRM/IRRM

AT T

A

kA2s

MAXIMUM

= TJ MAXIMUM

J

mA

30

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Revision: 11-Aug-08 1

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ST180CPbF Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 350 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1250 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Maximum (typical) latching current I

T(AV)

180° conduction, half sine wave
double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 660

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 5230

t = 10 ms

t = 8.3 ms 4400

t = 10 ms

t = 8.3 ms 114

t = 10 ms

t = 8.3 ms 81

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 750 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.96 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 1.14

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 1.14

T(AV)

), TJ = TJ maximum 1.08

T(AV)

), TJ = TJ maximum 1.18

T(AV)

350 (140) A

55 (85) °C

5000

4200

125

88

600

1000 (300)

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.0
µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 30 mA

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Document Number: 94396

2 Revision: 11-Aug-08

ST180CPbF Series

Phase Control Thyristors

Vishay High Power Products

(Hockey PUK Version), 350 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

GM

TJ = TJ maximum, tp ≤ 5 ms 10

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 90 150

J

T

= 125 °C 40 -

J

TJ = - 40 °C 2.9 -

= 25 °C 1.8 3.0

T

J

= 125 °C 1.2 -

T

J

Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 12 V
anode to cathode applied

Maximum gate current/voltage not
to trigger is the maximum value

TJ = TJ maximum

which will not trigger any unit with
rated V

anode to cathode

DRM

applied

VALUES

TYP. MAX.

3.0 A

20

5.0

180 -

10 mA

0.25 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to heatsink

Maximum thermal resistance,
case to heatsink

Mounting force, ± 10 %

Approximate weight 50 g

Case style See dimensions - link at the end of datasheet TO-200AB (A-PUK)

ΔR

CONDUCTION

thJC

SINUSOIDAL

CONDUCTION ANGLE

CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180°

120°

90°

60°

30°

0.015 0.015 0.011 0.011

0.018 0.019 0.019 0.019

0.024 0.024 0.026 0.026

0.035 0.035 0.036 0.037

0.060 0.060 0.060 0.061

Note

• The table above shows the increment of thermal resistance R

Document Number: 94396 For technical questions, contact: [e-mail]
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R

R

T

J

Stg

thJ-hs

thC-hs

- 40 to 125

- 40 to 150

DC operation single side cooled 0.17

DC operation double side cooled 0.08

DC operation single side cooled 0.033

DC operation double side cooled 0.017

4900
(500)

RECTANGULAR

CONDUCTION

when devices operate at different conduction angles than DC

thJC

TEST CONDITIONS UNITS

T

= TJ maximum K/W

J

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°C

K/W

N

(kg)

ST180CPbF Series

Vishay High Power Products

130

120

110

100

90

80

70

Maximum Allowable

60

Heatsink Temperature (°C)

50

40

130

120

110

100

90

80

70

60

50

Maximum Allowable

40

Heatsink Temperature (°C)

30

20

30°

0

50

Average On-State Current (A)

Fig. 1 - Current Ratings Characteristics

30°

0

Average On-State Current (A)

Fig. 2 - Current Ratings Characteristics

ST180C..C Series
(Single side cooled)

(DC) = 0.17 K/W

R

thJ-hs

Conduction angle

60°

90°

100 150 200 250

ST180C..C Series
(Single side cooled)

(DC) = 0.17 K/W

R

thJ-hs

Conduction period

90°

60°

180°

120°

200

Phase Control Thyristors

(Hockey PUK Version), 350 A

130

120

110

100

Ø

180°

120°

Ø

DC

300100

400

Maximum Allowable

Maximum Average

90

80

70

60

50

40

Heatsink Temperature (°C)

30

20

1000

900

800

700

600

500

400

300

200

On-State Power Loss (W)

100

ST180C..C Series
(Double side cooled)

(DC) = 0.08 K/W

R

thJ-hs

Ø

Conduction period

180°

200

60°

90°

120°

400 500 600 700

300100

30°

0

Average On-State Current (A)

Fig. 4 - Current Ratings Characteristics

180°
120°

90°
60°
30°

0

0

100 150 200 250 300 350 400 450

50

RMS limit

Ø

Conduction angle

ST180C..C Series

= 125 °C

T

J

Average On-State Current (A)

Fig. 5 - On-State Power Loss Characteristics

DC

130

120

110

100

90

80

70

60

50

Maximum Allowable

40

Heatsink Temperature (°C)

30

20

ST180C..C Series
(Double side cooled)

(DC) = 0.17 K/W

R

thJ-hs

Conduction angle

30°

60°

90°

120°

0

100 150 200 250 300 350 400 450

50

Average On-State Current (A)

Fig. 3 - Current Ratings Characteristics

Ø

180°

1300
1200
1100
1000

900
800
700
600
500
400

Maximum Average

300

On-State Power Loss (W)

200
100

DC
180°
120°

90°
60°
30°

0

100 200 300 400 500 600 700

0

RMS limit

Ø

Conduction period

ST180C..C Series

= 125 °C

T

J

Average On-State Current (A)

Fig. 6 - On-State Power Loss Characteristics

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Document Number: 94396

4 Revision: 11-Aug-08

ST180CPbF Series

4500

4000

3500

3000

On-State Current (A)

Peak Half Sine Wave

2500

ST180C..C Series

2000

1 10 100

Number of Equal Amplitude Half Cycle

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Phase Control Thyristors

(Hockey PUK Version), 350 A

At any rated load condition and with
rated V

Current Pulses (N)

applied following surge

RRM

Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

10 000

Vishay High Power Products

5000

4500

4000

3500

3000

On-State Current (A)

Peak Half Sine Wave

2500

2000

0.01 0.1 1

Fig. 8 - Maximum Non-Repetitive Surge Current

Maximum non repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.

ST180C..C Series

Single and Double Side Cooled

Initial TJ = 125 °C

No Voltage Reapplied

Rated V

RRM

Pulse Train Duration (s)

Reapplied

1

Steady state value
R

= 0.17 K/W

thJ-hs

(Single side cooled)

= 0.08 K/W

R

thJ-hs

0.1

(Double side cooled)
(DC operation)

- Transient

0.01

thJ-hs

Z

Thermal Impedance (K/W)

TJ = 25 °C

TJ = 125 °C

1000

ST180C..C Series

Instantaneous On-State Current (A)

100

123456

Instantaneous On-State Voltage (V)

Fig. 9 - On-State Voltage Drop Characteristics

ST180C..C Series

0.001

0.001

0.01 0.1 1 10

Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance Z

Characteristics

thJ-hs

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Revision: 11-Aug-08 5

ST180CPbF Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; t
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω

10

Instantaneous Gate Voltage (V)

0.1

ORDERING INFORMATION TABLE

Device code

1

0.001

≤ 1 µs

t

r

V

GD

I

GD

0.01 0.1 1 10 100

ST 18 0 C 20 C 1 - PbF

Phase Control Thyristors

(Hockey PUK Version), 350 A

≤ 1 µs

r

(a)

(b)

T

J

T

= 40 °C

J

T

= 25 °C

J

= 125 °C

Device: ST180C..C Series

Instantaneous Gate Current (A)

Fig. 11 - Gate Characteristics

(1) PGM = 10 W, tp = 4 ms

= 20 W, tp = 2 ms

(2) P

GM

(3) P

= 40 W, tp = 1 ms

GM

(4) P

= 60 W, tp = 0.66 ms

GM

(1) (2)

Frequency limited by P

(3) (4)

G(AV)

324

1

- Thyristor

2

- Essential part number

3

- 0 = Converter grade

4

- C = Ceramic PUK

5

- Voltage code x 100 = V

6

- C = PUK case TO-200AB (A-PUK)

7

- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)

51

6789

(see Voltage Ratings table)

RRM

1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals (gate and auxiliary cathode soldered leads)

3 = Fast-on terminals (gate and auxiliary cathode soldered leads)

8

- Critical dV/dt:

None = 500 V/µs (standard selection)

L = 1000 V/µs (special selection)

9

- Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95074

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Document Number: 94396

6 Revision: 11-Aug-08

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1

DIMENSIONS in millimeters (inches)

TO-200AB (A-PUK)

Case Style TO-200AB (A-PUK)

Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum

19 (0.75)

DIA. MAX.

Outline Dimensions

Vishay High Power Products

0.3 (0.01) MIN.

13.7/14.4

(0.54/0.57)

19 (0.75)

DIA. MAX.

38 (1.50) DIA MAX.

2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep

42 (1.65) MAX.

0.3 (0.01) MIN.

Gate terminal for

1.47 (0.06) DIA.
pin receptacle

6.5 (0.26)

4.75 (0.19)

25° ± 5°

28 (1.10)

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

Document Number: 95074 For technical questions concerning discrete products, contact: [e-mail]
Revision: 01-Aug-07 For technical questions concerning module products, contact: [e-mail]

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1