Vishay ST180CPbF Series Data Sheet
Document Number: 94396 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 11-Aug-08 1
Phase Control Thyristors
(Hockey PUK Version), 350 A
ST180CPbF Series
Vishay High Power Products
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AB (A-PUK)
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
I
T(AV)
350 A
TO-200AB (A-PUK)
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
350 A
T
hs
55 °C
I
T(RMS)
660 A
T
hs
25 °C
I
TSM
50 Hz 5000
A
60 Hz 5230
I
2
t
50 Hz 125
kA
2
s
60 Hz 114
V
DRM
/V
RRM
400 to 2000 V
t
q
Typical 100 µs
T
J
- 40 to 125 °C
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
DRM
/V
RRM
, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
ST180C..C
04 400 500
30
08 800 900
12 1200 1300
16 1600 1700
18 1800 1900
20 2000 2100
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94396
2 Revision: 11-Aug-08
ST180CPbF Series
Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version), 350 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
I
T(AV)
180° conduction, half sine wave
double side (single side) cooled
350 (140) A
55 (85) °C
Maximum RMS on-state current I
T(RMS)
DC at 25 °C heatsink temperature double side cooled 660
A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
5000
t = 8.3 ms 5230
t = 10 ms
100 % V
RRM
reapplied
4200
t = 8.3 ms 4400
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
125
kA
2
s
t = 8.3 ms 114
t = 10 ms
100 % V
RRM
reapplied
88
t = 8.3 ms 81
Maximum I
2
√t for fusing I
2
√t t = 0.1 to 10 ms, no voltage reapplied 1250 kA
2
√s
Low level value of threshold voltage V
T(TO)1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 1.08
V
High level value of threshold voltage V
T(TO)2
(I > π x I
T(AV)
), T
J
= T
J
maximum 1.14
Low level value of on-state slope resistance r
t1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 1.18
mΩ
High level value of on-state slope resistance r
t2
(I > π x I
T(AV)
), T
J
= T
J
maximum 1.14
Maximum on-state voltage V
TM
I
pk
= 750 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse 1.96 V
Maximum holding current I
H
T
J
= 25 °C, anode supply 12 V resistive load
600
mA
Maximum (typical) latching current I
L
1000 (300)
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
dI/dt
Gate drive 20 V, 20 Ω, t
r
≤ 1 µs
T
J
= T
J
maximum, anode voltage ≤ 80 % V
DRM
1000 A/µs
Typical delay time t
d
Gate current 1 A, dI
g
/dt = 1 A/µs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
1.0
µs
Typical turn-off time t
q
I
TM
= 300 A, T
J
= T
J
maximum, dI/dt = 20 A/µs,
V
R
= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, t
p
= 500 µs
100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt T
J
= T
J
maximum linear to 80 % rated V
DRM
500 V/µs
Maximum peak reverse and
off-state leakage current
I
RRM
,
I
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied 30 mA
Document Number: 94396 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 11-Aug-08 3
ST180CPbF Series
Phase Control Thyristors
(Hockey PUK Version), 350 A
Vishay High Power Products
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
TYP. MAX.
Maximum peak gate power P
GM
T
J
= T
J
maximum, t
p
≤ 5 ms 10
W
Maximum average gate power P
G(AV)
T
J
= T
J
maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current I
GM
T
J
= T
J
maximum, t
p
≤ 5 ms
3.0 A
Maximum peak positive gate voltage + V
GM
20
V
Maximum peak negative gate voltage - V
GM
5.0
DC gate current required to trigger I
GT
T
J
= - 40 °C
Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 12 V
anode to cathode applied
180 -
mAT
J
= 25 °C 90 150
T
J
= 125 °C 40 -
DC gate voltage required to trigger V
GT
T
J
= - 40 °C 2.9 -
V
T
J
= 25 °C 1.8 3.0
T
J
= 125 °C 1.2 -
DC gate current not to trigger I
GD
T
J
= T
J
maximum
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated V
DRM
anode to cathode
applied
10 mA
DC gate voltage not to trigger V
GD
0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction
temperature range
T
J
- 40 to 125
°C
Maximum storage temperature range T
Stg
- 40 to 150
Maximum thermal resistance,
junction to heatsink
R
thJ-hs
DC operation single side cooled 0.17
K/W
DC operation double side cooled 0.08
Maximum thermal resistance,
case to heatsink
R
thC-hs
DC operation single side cooled 0.033
DC operation double side cooled 0.017
Mounting force, ± 10 %
4900
(500)
N
(kg)
Approximate weight 50 g
Case style See dimensions - link at the end of datasheet TO-200AB (A-PUK)
ΔR
thJC
CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL
CONDUCTION
RECTANGULAR
CONDUCTION
TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180°
0.015 0.015 0.011 0.011
T
J
= T
J
maximum K/W
120°
0.018 0.019 0.019 0.019
90°
0.024 0.024 0.026 0.026
60°
0.035 0.035 0.036 0.037
30°
0.060 0.060 0.060 0.061
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