Vishay ST180CPbF Series Data Sheet

TO-200AB (A-PUK)

PRODUCT SUMMARY

I

T(AV)

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 350 A

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case TO-200AB (A-PUK)

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

350 A

• Controlled DC power supplies

• AC controllers

ST180CPbF Series

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 5000

60 Hz 5230

50 Hz 125

60 Hz 114

Typical 100 µs

350 A

55 °C

660 A

25 °C

400 to 2000 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

ST180C..C

V

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

16 1600 1700

18 1800 1900

20 2000 2100

DRM/VRRM

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

NON-REPETITIVE PEAK VOLTAGE

V

, MAXIMUM

RSM

V

I

DRM/IRRM

AT T

A

kA2s

MAXIMUM

= TJ MAXIMUM

J

mA

30

Document Number: 94396 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

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ST180CPbF Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 350 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1250 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Maximum (typical) latching current I

T(AV)

180° conduction, half sine wave
double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 660

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 5230

t = 10 ms

t = 8.3 ms 4400

t = 10 ms

t = 8.3 ms 114

t = 10 ms

t = 8.3 ms 81

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 750 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.96 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 1.14

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 1.14

T(AV)

), TJ = TJ maximum 1.08

T(AV)

), TJ = TJ maximum 1.18

T(AV)

350 (140) A

55 (85) °C

5000

4200

125

88

600

1000 (300)

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.0
µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 30 mA

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94396

2 Revision: 11-Aug-08

ST180CPbF Series

Phase Control Thyristors

Vishay High Power Products

(Hockey PUK Version), 350 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

GM

TJ = TJ maximum, tp ≤ 5 ms 10

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 90 150

J

T

= 125 °C 40 -

J

TJ = - 40 °C 2.9 -

= 25 °C 1.8 3.0

T

J

= 125 °C 1.2 -

T

J

Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 12 V
anode to cathode applied

Maximum gate current/voltage not
to trigger is the maximum value

TJ = TJ maximum

which will not trigger any unit with
rated V

anode to cathode

DRM

applied

VALUES

TYP. MAX.

3.0 A

20

5.0

180 -

10 mA

0.25 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to heatsink

Maximum thermal resistance,
case to heatsink

Mounting force, ± 10 %

Approximate weight 50 g

Case style See dimensions - link at the end of datasheet TO-200AB (A-PUK)

ΔR

CONDUCTION

thJC

SINUSOIDAL

CONDUCTION ANGLE

CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180°

120°

90°

60°

30°

0.015 0.015 0.011 0.011

0.018 0.019 0.019 0.019

0.024 0.024 0.026 0.026

0.035 0.035 0.036 0.037

0.060 0.060 0.060 0.061

Note

• The table above shows the increment of thermal resistance R

Document Number: 94396 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 3

R

R

T

J

Stg

thJ-hs

thC-hs

- 40 to 125

- 40 to 150

DC operation single side cooled 0.17

DC operation double side cooled 0.08

DC operation single side cooled 0.033

DC operation double side cooled 0.017

4900
(500)

RECTANGULAR

CONDUCTION

when devices operate at different conduction angles than DC

thJC

TEST CONDITIONS UNITS

T

= TJ maximum K/W

J

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°C

K/W

N

(kg)