Vishay SQ4940EY Schematic [ru]

Automotive

S

1

D

1

G

1

D

1

S

2

D

2

G

2

D

2

SO-8

5

6

7

8

Top View

2

3

4

1

Dual N-Channel 40 V (D-S) 175 °C MOSFET

SQ4940EY

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 40

R

() at VGS = 10 V 0.035

DS(on)

() at VGS = 4.5 V 0.055

R

DS(on)

(A) 7

I

D

Configuration Dual

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

•TrenchFET

• Compliant to RoHS Directive 2002/95/EC

• AEC-Q101 Qualified

• Find out more about Vishay’s Automotive

®

Power MOSFET

c

Grade Product Requirements at:

G

1

N-Channel MOSFET

D

1

G

2

S

1

D

2

S

2

N-Channel MOSFET

www.vishay.com/applications

ORDERING INFORMATION

Package SO-8

Lead (Pb)-free and Halogen-free SQ4940EY-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current

C

T

= 125 °C 4

C

Continuous Source Current (Diode Conduction) I

Pulsed Drain Current

Single Pulse Avalanche Energy

Single Pulse Avalanche Current E

Maximum Power Dissipation

a

L = 0.1 mH

a

TC = 25 °C

T

= 125 °C 1.1

C

Operating Junction and Storage Temperature Range T

DS

± 20

GS

I

D

S

IDM 28

I

AS

AS

P

D

, T

J

stg

40

V

7

3

A

17

14 mJ

3.3
W

- 55 to + 175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-Ambient PCB Mount

Junction-to-Foot (Drain) R

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.

Document Number: 72163 www.vishay.com
S10-2114-Rev. A, 27-Sep-10 1

b

R

thJA

thJF

110

45

°C/W

SQ4940EY

Vishay Siliconix

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

a

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

I

a

R

b

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

c

Turn-Off Delay Time

Fall Time

c

c

c

c

c

c

Source-Drain Diode Ratings and Characteristics

Pulsed Current

a

Forward Voltage V

DS

GS(th)

V

GSS

DSS

V

D(on)

DS(on)

g

fs

iss

- 102 130

oss

-5265

rss

Qg

Qgs -2-

Qgd -2.9-

t

d(on)

t

r

t

-1928

d(off)

tf -711

b

I

SM

SD

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

V

VGS = 0 V, ID = 250 μA 40 - -

VDS = VGS, ID = 250 μA 1.5 2.0 2.5

= 0 V, VGS = ± 20 V - - ± 100 nA

DS

VGS = 0 V VDS = 40 V - - 1.0

= 0 V VDS = 40 V, TJ = 125 °C - - 50

GS

= 0 V VDS = 40 V, TJ = 175 °C - - 150

V

GS

= 10 V VDS5 V 25 - - A

GS

V

= 10 V ID = 6 A - 0.026 0.035

GS

= 10 V ID = 6 A, TJ = 125 °C - - 0.056

V

GS

V

= 10 V ID = 6 A, TJ = 175 °C - - 0.067

GS

= 4.5 V ID = 5 A - 0.035 0.055

GS

VDS = 15 V, ID = 6 A - 17 - S

- 663 830

V

= 0 V VDS = 25 V, f = 1 MHz

GS

-1421

= 10 V VDS = 20 V, ID = 5.7 A

V

GS

-812

= 20 V, RL = 20 

V

DD

I

 1 A, V

D

= 10 V, Rg = 1 

GEN

-812

--28A

IF = 2 A, V

= 0 V - 0.8 1.1 V

GS

V

μA V



pF Output Capacitance C

nC Gate-Source Charge

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com Document Number: 72163
2 S10-2114-Rev. A, 27-Sep-10

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

0

6

12

18

24

30

0 2 4 6 8 10

I

D

- Drain Current (A)

VDS-Drain-to-Source Voltage (V)

VGS= 10 V thru 5 V

VGS= 3 V

V

= 4 V

0

2

4

6

8

10

0 1 2 3 4 5

I

D

- Drain Current (A)

VGS- Gate-to-Source Voltage (V)

TC= 125 °C

TC= - 55 °C

TC= 25 °C

0.00

0.02

0.04

0.06

0.08

0.10

0 6 12 18 24 30

R

DS(on)

-On-Resistance (Ω)

ID-Drain Current (A)

VGS= 4.5 V

VGS= 10 V

0

6

12

18

24

30

0 2 4 6 8 10

I

D

- Drain Current (A)

VGS- Gate-to-Source Voltage (V)

TC= - 55 °C

TC= 125 °C

TC= 25 °C

0

200

400

600

800

1000

0 5 10 15 20 25 30 35 40

C - Capacitance (pF)

VDS-Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

SQ4940EY

Vishay Siliconix

Output Characteristics

Transfer Characteristics

Transfer Characteristics

25

TC= - 55 °C

20

15

10

-Transconductance (S)

fs

g

5

0

0 2 4 6 8 10 12

ID- Drain Current (A)

TC= 25 °C

TC= 125 °C

Transconductance

On-Resistance vs. Drain Current

Document Number: 72163 www.vishay.com
S10-2114-Rev. A, 27-Sep-10 3

Capacitance

SQ4940EY

0

2

4

6

8

10

0 3 6 9 12 15

V

GS

- Gate-to-Source Voltage (V)

Qg-Total Gate Charge (nC)

ID= 5.7 A
V

DS

= 20 V

0.001

0.01

0.1

1

10

100

0.0 0.2 0.4 0.6 0.8 1.0 1.2

I

S

- Source Current (A)

VSD- Source-to-Drain Voltage (V)

TJ= 25 °C

TJ= 150 °C

-1.0

-0.7

-0.4

-0.1

0.2

0.5

- 50 - 25 0 25 50 75 100 125 150 175

V

GS(th)

Variance (V)

TJ-Temperature (°C)

I

= 250 μA

I

= 5 mA

Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

2.0

Gate Charge

ID= 5.7 A

1.7

1.4

-On-Resistance

1.1

(Normalized)

DS(on)

R

0.8

0.5

- 50 - 25 0 25 50 75 100 125 150 175

TJ- Junction Temperature (°C)

VGS= 10 V

VGS= 4.5 V

On-Resistance vs. Junction Temperature

0.15

0.12

0.09

0.06

-On-Resistance (Ω)

DS(on)

R

0.03
TJ= 25 °C

TJ= 150 °C

Source Drain Diode Forward Voltage

Threshold Voltage

www.vishay.com Document Number: 72163
4 S10-2114-Rev. A, 27-Sep-10

0.00

0246810

VGS- Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

52

50

48

46

-Drain-to-Source Voltage (V)

DS

44

V

42

- 50 - 25 0 25 50 75 100 125 150 175

ID= 1 mA

TJ- Junction Temperature (°C)

Drain Source Breakdown vs. Junction Temperature

THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

0.01

0.1

1

10

100

0.01 0.1 1 10 100

I

D

- Drain Current (A)

VDS-Drain-to-Source Voltage (V)

* V

GS

> minimum VGSat which R

DS(on)

is specied

100 ms

Limited by R

DS(on)

*

1 ms

IDMLimited

TC= 25 °C
Single Pulse

BVDSS Limited

10 ms

100 μs

1 s
10 s, DC

2

1

0.1

0.01
10

-4

10

-3

10

-2

10

-1

1 10 600

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

Normalized Effective Transient

Thermal Impedance

1. Duty Cycle, D =

2. Per Unit Base = R

thJA

= 110 °C/W

3. T

JM

- TA = PDMZ

thJA

(t)

t

1

t

2

t

1

t

2

Notes:

4. Surface Mounted

P

DM

100

Safe Operating Area

SQ4940EY

Vishay Siliconix

Document Number: 72163 www.vishay.com
S10-2114-Rev. A, 27-Sep-10 5

Normalized Thermal Transient Impedance, Junction-to-Ambient

SQ4940EY

Vishay Siliconix

THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

2

1

Duty Cycle = 0.5

0.2

0.1

0.1

Thermal Impedance

Normalized Effective Transient

0.05

0.02

Single Pulse

0.01

-4

10

-3

10

-2

10

Square Wave Pulse Duration (s)

10

-1

110

Normalized Thermal Transient Impedance, Junction-to-Foot

Note

• The characteristics shown in the two graphs

- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)

- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72163

.

www.vishay.com Document Number: 72163
6 S10-2114-Rev. A, 27-Sep-10

Legal Disclaimer Notice

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1