Vishay SQ4940EY Schematic [ru]
Automotive
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
Dual N-Channel 40 V (D-S) 175 °C MOSFET
SQ4940EY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 40
R
() at VGS = 10 V 0.035
DS(on)
() at VGS = 4.5 V 0.055
R
DS(on)
(A) 7
I
D
Configuration Dual
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
• Compliant to RoHS Directive 2002/95/EC
• AEC-Q101 Qualified
• Find out more about Vishay’s Automotive
®
Power MOSFET
c
Grade Product Requirements at:
G
1
N-Channel MOSFET
D
1
G
2
S
1
D
2
S
2
N-Channel MOSFET
www.vishay.com/applications
ORDERING INFORMATION
Package SO-8
Lead (Pb)-free and Halogen-free SQ4940EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current
C
T
= 125 °C 4
C
Continuous Source Current (Diode Conduction) I
Pulsed Drain Current
Single Pulse Avalanche Energy
Single Pulse Avalanche Current E
Maximum Power Dissipation
a
L = 0.1 mH
a
TC = 25 °C
T
= 125 °C 1.1
C
Operating Junction and Storage Temperature Range T
DS
± 20
GS
I
D
S
IDM 28
I
AS
AS
P
D
, T
J
stg
40
V
7
3
A
17
14 mJ
3.3
W
- 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
Junction-to-Foot (Drain) R
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
Document Number: 72163 www.vishay.com
S10-2114-Rev. A, 27-Sep-10 1
b
R
thJA
thJF
110
45
°C/W
SQ4940EY
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
a
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
b
I
a
R
b
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
c
Turn-Off Delay Time
Fall Time
c
c
c
c
c
c
Source-Drain Diode Ratings and Characteristics
Pulsed Current
a
Forward Voltage V
DS
GS(th)
V
GSS
DSS
V
D(on)
DS(on)
g
fs
iss
- 102 130
oss
-5265
rss
Qg
Qgs -2-
Qgd -2.9-
t
d(on)
t
r
t
-1928
d(off)
tf -711
b
I
SM
SD
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
V
VGS = 0 V, ID = 250 μA 40 - -
VDS = VGS, ID = 250 μA 1.5 2.0 2.5
= 0 V, VGS = ± 20 V - - ± 100 nA
DS
VGS = 0 V VDS = 40 V - - 1.0
= 0 V VDS = 40 V, TJ = 125 °C - - 50
GS
= 0 V VDS = 40 V, TJ = 175 °C - - 150
V
GS
= 10 V VDS5 V 25 - - A
GS
V
= 10 V ID = 6 A - 0.026 0.035
GS
= 10 V ID = 6 A, TJ = 125 °C - - 0.056
V
GS
V
= 10 V ID = 6 A, TJ = 175 °C - - 0.067
GS
= 4.5 V ID = 5 A - 0.035 0.055
GS
VDS = 15 V, ID = 6 A - 17 - S
- 663 830
V
= 0 V VDS = 25 V, f = 1 MHz
GS
-1421
= 10 V VDS = 20 V, ID = 5.7 A
V
GS
-812
= 20 V, RL = 20
V
DD
I
1 A, V
D
= 10 V, Rg = 1
GEN
-812
--28A
IF = 2 A, V
= 0 V - 0.8 1.1 V
GS
V
μA V
pF Output Capacitance C
nC Gate-Source Charge
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com Document Number: 72163
2 S10-2114-Rev. A, 27-Sep-10
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
0
6
12
18
24
30
0 2 4 6 8 10
I
D
- Drain Current (A)
VDS-Drain-to-Source Voltage (V)
VGS= 10 V thru 5 V
VGS= 3 V
V
= 4 V
0
2
4
6
8
10
0 1 2 3 4 5
I
D
- Drain Current (A)
VGS- Gate-to-Source Voltage (V)
TC= 125 °C
TC= - 55 °C
TC= 25 °C
0.00
0.02
0.04
0.06
0.08
0.10
0 6 12 18 24 30
R
DS(on)
-On-Resistance (Ω)
ID-Drain Current (A)
VGS= 4.5 V
VGS= 10 V
0
6
12
18
24
30
0 2 4 6 8 10
I
D
- Drain Current (A)
VGS- Gate-to-Source Voltage (V)
TC= - 55 °C
TC= 125 °C
TC= 25 °C
0
200
400
600
800
1000
0 5 10 15 20 25 30 35 40
C - Capacitance (pF)
VDS-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
SQ4940EY
Vishay Siliconix
Output Characteristics
Transfer Characteristics
Transfer Characteristics
25
TC= - 55 °C
20
15
10
-Transconductance (S)
fs
g
5
0
0 2 4 6 8 10 12
ID- Drain Current (A)
TC= 25 °C
TC= 125 °C
Transconductance
On-Resistance vs. Drain Current
Document Number: 72163 www.vishay.com
S10-2114-Rev. A, 27-Sep-10 3
Capacitance
Loading...