Vishay SiS780DN Schematic

New Product

1

2

3

4

5

6

7

8

S

G

D

3.30 mm 3.30 mm

PowerPAK

®

1212-8

Bottom View

Ordering Information:

SiS780DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

S

D

Schottky Diode

SiS780DN

Vishay Siliconix

N-Channel 30 V (D-S) MOSFET with Schottky Diode

PRODUCT SUMMARY

VDS (V) R

30

0.0135 at V

0.0175 at V

DS(on)

()

GS

= 10 V

= 4.5 V

(A)

Q

g

a

7.3 nC

a

I

D

18

(Typ.)

• Halogen-free According to IEC 61249-2-21 Definition

• SkyFET

®

Monolithic TrenchFET® Gen III

Power MOSFET and Schottky Diode

• 100 % R

and UIS Tested

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

FEATURES

• Notebook PC

- System Power, Memory

• Buck Converter

• Synchronous Rectifier Switch

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current (t = 300 µs)

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

V

DS

V

= 25 °C

T

C

T

= 70 °C

C

TA = 25 °C

GS

I

D

TA = 70 °C

I

= 25 °C

T

C

TA = 25 °C

L =0.1 mH

= 25 °C

T

C

= 70 °C 17.7

T

C

T

= 25 °C

A

DM

I

S

I

AS

E

AS

P

D

TA = 70 °C

T

, T

J

stg

30

± 20

a

18

a

18

b, c

12

b, c

9.5 50

a

18

b, c

2.9 15

11.25

27.7

b, c

3.5

b, c

2.2

- 55 to 150 260

V

A

mJ

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Steady State

Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg?73257

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 81 °C/W.

Document Number: 67941 S11-1178-Rev. A, 13-Jun-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

b, f

t  10 s

R

thJA

R

thJC

29 36

3.6 4.5

°C/W

). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

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1

This document is subject to change without notice.

New Product

SiS780DN

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

a

V

DS

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

VGS = 0, ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 30 V, V

DS

V

= 30 V, V

DS

V

GS

= 0 V, TJ = 100 °C

GS

5 V, V

= 10 V, ID = 15 A

GS

= 4.5 V, ID = 10 A

VDS = 15 V, ID = 15 A

VDS = 15 V, V

V

= 15 V, V

DS

GS

= 10 V, ID = 10 A

GS

= 4.5 V, ID = 10 A

GS

f = 1 MHz 0.3 1.1 2.2 

V

= 15 V, RL = 1.5 

DD

 10 A, V

I

D

V

 10 A, V

I

D

DD

= 4.5 V, Rg = 1 

GEN

= 15 V, RL = 1.5 

= 10 V, Rg = 1 

GEN

TC = 25 °C

IS = 1 A

= 0 V

GS

= 10 V

GS

= 0 V, f = 1 MHz

30

12.3

V

± 100 nA

0.017 0.150

110

mA

30 A

0.0110 0.0135

0.0145 0.0175



25 S

722

194

pFOutput Capacitance

64

16.3 24.5

7.3 11

2.2

nC

2

918

18 35

10 20

714

ns

11 22

14 28

918

18

50

A

0.42 0.53 V

14.5 29 ns

510nC

7.5

7

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

This document is subject to change without notice.

Document Number: 67941

S11-1178-Rev. A, 13-Jun-11

New Product

0

10

20

30

40

50

0 0.5 1 1.5 2 2.5

I

D

- Drain Current (A)

VDS- Drain-to-Source Voltage (V)

VGS= 10 V thru 4 V

VGS= 2 V

VGS= 3 V

0.007

0.010

0.013

0.016

0.019

0.022

0 10 20 30 40 50

R

DS(on)

- On-Resistance (Ω)

ID- Drain Current (A)

VGS= 4.5 V

VGS= 10 V

0

2

4

6

8

10

0 3.4 6.8 10.2 13.6 17.0

V

GS

- Gate-to-Source Voltage (V)

Qg- Total Gate Charge (nC)

VDS= 15 V

VDS= 20 V

VDS= 10 V

ID= 10 A

0

2

4

6

8

10

0 1 2 3 4 5

I

D

- Drain Current (A)

VGS- Gate-to-Source Voltage (V)

TC= 25 °C

TC= 125 °C

TC= - 55 °C

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50-250 255075100125150

R

DS(on)

- On-Resistance (Normalized)

TJ- Junction Temperature (°C)

ID= 15 A

VGS= 10 V

VGS= 4.5 V

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

SiS780DN

Vishay Siliconix

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Transfer Characteristics

1000

800

600

400

C - Capacitance (pF)

200

0

C

rss

0 4 8 12 16 20

VDS- Drain-to-Source Voltage (V)

C

iss

C

oss

Capacitance

Gate Charge

Document Number: 67941 S11-1178-Rev. A, 13-Jun-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

On-Resistance vs. Junction Temperature

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3

This document is subject to change without notice.

New Product

10

-1

10

-2

10

-3

10

-4

10

-5

10

-6

10

-7

0 255075100125150

I

R

- Reverse Current (A)

TJ-Temperature (°C)

20 V

10 V

30 V

0

0.02

0.04

0.06

0.08

0.10

0246810

R

DS(on)

- On-Resistance (Ω)

VGS- Gate-to-Source Voltage (V)

TJ= 125 °C

TJ= 25 °C

ID= 15 A

0

24

48

72

96

120

0.001 0.01 0.1 1 10

Power (W)

Time (s)

SiS780DN

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

100

10

1

0.1

- Source Current (A)

S

I

0.01

0.001

0.0 0.2 0.4 0.6 0.8 1.0

VSD- Source-to-Drain Voltage (V)

TJ= 150 °C

TJ= 25 °C

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Reverse Current (Schottky)

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

100

IDMLimited

IDLimited

10

1

- Drain Current (A)

D

I

0.1

0.01

Limited by R

TC= 25 °C

Single Pulse

0.01 0.1 1 10 100 VDS- Drain-to-Source Voltage (V)

* V

> minimum VGSat which R

GS

DS(on)

*

BVDSS Limited

DS(on)

is specied

Safe Operating Area, Junction-to-Ambient

This document is subject to change without notice.

Single Pulse Power, Junction-to-Ambient

100 μs

1 ms

10 ms

100 ms

1 s

10 s

DC

Document Number: 67941

S11-1178-Rev. A, 13-Jun-11

New Product

0

8

16

24

32

40

0 25 50 75 100 125 150

I

D

- Drain Current (A)

TC- Case Temperature (°C)

Package Limited

0.0

0.4

0.8

1.2

1.6

2.0

0255075100125150

Power (W)

TA- Ambient Temperature (°C)

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Current Derating*

SiS780DN

Vishay Siliconix

35

28

21

Power (W)

14

7

0

0 255075100125150

TC- Case Temperature (°C)

Power, Junction-to-Case

* The power dissipation PD is based on T

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

Power, Junction-to-Ambient

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Document Number: 67941 S11-1178-Rev. A, 13-Jun-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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5

This document is subject to change without notice.

Vishay SiS780DN Schematic [ru]