Vishay SiS472DN Datasheet

N-Channel 30 V (D-S) MOSFET

Ordering Information: SiS472DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

3.30 mm 3.30 mm

PowerPAK

®

1212-8

Bottom View

SiS472DN

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

30

0.0089 at V

0.0124 at V

()I

DS(on)

= 10 V 20

GS

= 4.5 V 20

GS

D

(A)

a, g

Qg (Typ.)

9.8 nC

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET

• Optimized for High-Side Synchronous

®

Power MOSFET

Rectifier Operation

• 100 % R

Tested

g

• 100 % UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

D

• Notebook CPU Core

- High-Side Sw

itch

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

C

= 70 °C

T

Continuous Drain Current (T

= 150 °C)

J

C

TA = 25 °C

TA = 70 °C

Pulsed Drain Current I

T

= 25 °C

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current

Avalanche Energy E

Maximum Power Dissipation

C

TA = 25 °C

L = 0.1 mH

T

= 25 °C

C

T

= 70 °C 18

C

T

= 25 °C

A

I

P

TA = 70 °C

Operating Junction and Storage Temperature Range TJ, T

Soldering Recommendations (Peak Temperature)

d, e

DS

GS

I

D

DM

I

AS

S

D

stg

30

± 20

g

20

g

20

b, c

15

b, c

12

50

g

20

b, c

3.2 21

22 mJ

28

b, c

3.5

b, c

2.2

- 55 to 150

260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Steady State R

Notes: a. Base on T b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg?73257

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 81 °C/W. g. Package limited.

Document Number: 67307 S10-2882-Rev. A, 20-Dec-10

= 25 °C.

C

b, f

t  10 s R

thJA

thJC

29 36

3.6 4.5

°C/W

). The PowerPAK® 1212 is a leadless package. The end of the lead terminal is exposed copper

www.vishay.com

1

SiS472DN

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/T

V

DS

V

Temperature Coefficient V

GS(th)

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Gate Resistance R

Tur n -O n D el a y T im e t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Tur n -O n D el a y T im e t

Rise Time t

Turn-Off Delay Time t

Fall Time t

DS

J

GS(th)/TJ

GS(th)

GSS

DSS

I

V

D(on)

R

DS(on)

g

fs

iss

oss

120

rss

g

gs

3.7

gd

g

d(on)

r

19 29

d(off)

f

d(on)

r

18 27

d(off)

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulse Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Fall Time t

Reverse Recovery Rise Time t

S

I

SM

SD

rr

a

b

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = 250 µA 30 V

ID = 250 µA

V

= VGS, ID = 250 µA 1.2 2.5 V

DS

28

- 5.5

VDS = 0 V, VGS = ± 20 V ± 100 nA

V

DS

= 30 V, V

DS

= 30 V, V

GS

5 V, V

DS

V

= 10 V, ID = 15 A 0.0074 0.0089

GS

V

= 4.5 V, ID = 13 A 0.0103 0.0124

GS

= 0 V 1

GS

= 0 V, TJ = 55 °C 10

= 10 V 20 A

GS

VDS = 15 V, ID = 13 A 49 S

997

VDS = 15 V, V

= 0 V, f = 1 MHz

GS

= 10 V, ID = 15 A 19.5 30

GS

195

9.8 15

V

= 15 V, V

DS

= 4.5 V, ID = 15 A

GS

3.7

f = 1 MHz 0.2 1.2 2.4 

19 29

V

I

 10 A, V

D

= 15 V, RL = 1.5 

DD

= 4.5 V, Rg = 1 

GEN

19 29

13 20

918

V

I

 10 A, V

D

= 15 V, RL = 1.5 

DD

= 10 V, Rg = 1 

GEN

918

815

TC = 25 °C 20

IS = 10 A 0.85 1.2 V

14 28 ns

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

510nC

7

50

mV/°C

µA



pFOutput Capacitance C

nC

ns

A

ns

www.vishay.com 2

Document Number: 67307

S10-2882-Rev. A, 20-Dec-10

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0

10

20

30

40

50

0.0 0.3 0.6 0.9 1.2 1.5

VDS- Drain-to-Source Voltage (V)

I

D

- Drain Current (A)

VGS=10V thru 5 V

VGS=4V

0.006

0.009

0.012

0.015

0 1020304050

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

VGS=4.5V

VGS=10V

0

1

2

3

4

5

01234

V

GS

- Gate-to-Source Voltage (V)

I

D

- Drain Current (A) TC= 25 °C

TC= 125 °C

TC= - 55 °C

0.5

0.8

1.1

1.4

1.7

- 50 - 25 0 25 50 75 100 125 150

TJ- Junction Temperature (°C)

(Normalized)

- On-Resistance

R

DS(on)

VGS=4.5V

ID= 15 A

VGS=10V

SiS472DN

Vishay Siliconix

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

10

ID= 15 A

8

VDS= 8 V

VDS= 15 V

Transfer Characteristics

1500

C

1200

900

600

C - Capacitance (pF)

300

iss

C

oss

C

rss

0

0 6 12 18 24 30

VDS- Drain-to-Source Voltage (V)

Capacitance

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0369121518 21

Qg- Total Gate Charge (nC)

Gate Charge

Document Number: 67307 S10-2882-Rev. A, 20-Dec-10

VDS= 24 V

On-Resistance vs. Junction Temperature

www.vishay.com

3

SiS472DN

1.0

1.3

1.6

1.9

2.2

2.5

- 50 - 25 0 25 50 75 100 125 150

ID=250µA

V (V)

GS(th)

TJ- Temperature (°C)

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

100

10

1

- Source Current (A)

S

I

0.1

0.0 0.3 0.6 0.9 1.2

TJ= 150 °C

V

- Source-to-Drain Voltage (V)

SD

TJ= 25 °C

Source-Drain Diode Forward Voltage

0.030

0.020

TJ= 125 °C

- On-Resistance (Ω)

0.010

DS(on)

R

0.000 2345678 910

VGS- Gate-to-Source Voltage (V)

TJ= 25 °C

On-Resistance vs. Gate-to-Source Voltage

120

96

72

Power (W)

48

24

0

0.1

Time (s)

Threshold Voltage

100

Limited by R

10

1

- Drain Current (A)

D

I

0.1

TC= 25 °C Single Pulse

0.01

0.1 1 10 100

* V

> minimum VGSat which R

GS

*

DS(on)

BVDSS Limited

VDS- Drain-to-Source Voltage (V)

DS(on)

Single Pulse Power, Junction-to-Ambient

100 μs

1 ms

10 ms

100 ms

1 s 10 s

DC

is specied

011100.00.01

Safe Operating Area, Junction-to-Ambient

www.vishay.com 4

Document Number: 67307

S10-2882-Rev. A, 20-Dec-10

Vishay SiS472DN Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual