Vishay SIS412DN Schematic

New Product

N-Channel 30-V (D-S) MOSFET

SiS412DN

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.024 at V

30

0.030 at V

(Ω)

DS(on)

= 10 V

GS

= 4.5 V

GS

PowerPAK 1212-8

a

I

(A)

D

12

Qg (Typ.)

3.8 nC

FEATURES

• Halogen-free According to IEC 61249-2-21

• TrenchFET

• 100 % R

®

Power MOSFET

Tested

g

APPLICATIONS

•

Notebook PC

- System Power

3.30 mm

D

8

D

7

D

6

5

Bottom View

Ordering Information: SiS412DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

1

D

3.30 mm

S

2

S

3

G

4

- Load Switch

D

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

T

Continuous Drain Current (T

= 150 °C)

J

T TA = 25 °C TA = 70 °C

Pulsed Drain Current

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current Single Pulse Avalanche Energy

T TA = 25 °C

L = 0.1 mH

T

Maximum Power Dissipation

T T

TA = 70 °C Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

e, f

= 25 °C

C

= 70 °C

C

= 25 °C

C

= 25 °C

C

= 70 °C

C

= 25 °C

A

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

P

D

T

, T

J

stg

30

± 20

a

12

a

12

b, c

8.7

b, c

7

30

a

12

b, c

2.7 5

1.25

15.6 10

b, c

3.2

b, c

2

- 55 to 150 260

V

A

mJ

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Steady State

Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 81 °C/W. e. See Solder Profile (www.vishay.com/ppg?73257

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.

f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 69006 S09-0135-Rev. C, 02-Feb-09

b, d

t ≤ 10 s

R

thJA

R

thJC

32 39

6.5 8

°C/W

). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed

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1

New Product

SiS412DN

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔV

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

Tur n - O n D e l ay Time

Rise Time

Turn-Off Delay Time

Fall Ti me

V

DS

DS /TJ

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

V

DS

I

D

I

D

IF = 6.3 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = 250 µA

GS

VDS = V

V

= 0 V, V

DS

V

= 30 V, V

DS

= 30 V, V

≥ 5 V, V

DS

V

= 10 V, ID = 7.8 A

GS

V

= 4.5 V, ID = 7.0 A

GS

V

= 10 V, ID = 7.8 A

DS

= 15 V, V

DS

= 15 V, V

V

= 15 V, RL = 2.4 Ω

DD

≅ 6.3 A, V

V

= 15 V, RL = 2.4 Ω

DD

≅ 6.3 A, V

IS = 6.3 A, V

30 V

ID = 250 µA

, ID = 250 µA

GS

= ± 20 V

GS

= 0 V, TJ = 55 °C

GS

= 10 V

GS

1.0 2.5 V

= 0 V

20 A

35

- 4.5

mV/°C

± 100 nA

1

5

0.020 0.024

0.024 0.030

17 S

435

= 0 V, f = 1 MHz

GS

95

42

= 10 V, ID = 7.8 A

GS

812

3.8 6

= 4.5 V, ID = 7.8 A

GS

1.4

1.1

f = 1 MHz 1.5 3.2 4.5 Ω

15 25

12 20

= 4.5 V, Rg = 1 Ω

GEN

13 20

10 15

510

10 15

= 10 V, Rg = 1 Ω

GEN

15 25

10 15

TC = 25 °C

4.2

30

GS

= 0 V

0.8 1.2 V

15 25 ns

712nC

9

6

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the de vice. These are stress rating s only, and functiona l operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 69006

S09-0135-Rev. C, 02-Feb-09

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SiS412DN

Vishay Siliconix

30

25

20

15

- Drain Current (A)I 10

D

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS=10thru 4 V

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

0.035

0.030

0.025

0.020

- On-Resistance (Ω)R

DS(on)

0.015

0.010 0 5 10 15 20 25 30

VGS=4.5V

VGS=10V

ID- Drain Current (A)

On-Resistance vs. Drain Current

VGS=3V

10

8

6

4

- Drain Current (A)I

D

2

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

- Gate-to-Source Voltage (V)

V

GS

TC= 25 °C

TC= 125 °C

Transfer Characteristics

600

C - Capacitance (pF)

500

400

300

200

100

0

0 5 10 15 20 25 30

C

iss

C

oss

C

rss

VDS- Drain-to-Source Voltage (V)

Capacitance

TC= - 55 °C

10

ID=7.8 A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

02468

VDS=15V

Qg- Total Gate Charge (nC)

Gate Charge

Document Number: 69006 S09-0135-Rev. C, 02-Feb-09

VDS=24V

1.8

ID=7.8 A

1.6

1.4

1.2

- On-Resistance (Normalized)

1.0

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

T

-Junction Temperature (°C)

J

VGS=10V

VGS=4.5V

On-Resistance vs. Junction Temperature

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New Product

SiS412DN

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

- Source Current (A)I

S

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ= 150 °C

-Source-to-Drain Voltage (V)

V

SD

Source-Drain Diode Forward Voltage

1.9

1.8

1.7

1.6

1.5

(V)V

1.4

GS(th)

1.3

1.2

1.1

1.0

0.9

- 50 - 25 0 25 50 75 100 125 150

ID= 250 µA

TJ- Temperature (°C)

Threshold Voltage

TJ= 25 °C

0.08

ID=7.8 A

0.06

0.04

- On-Resistance (Ω)

DS(on)

0.02

R

0

02468 10

VGS- Gate-to-Source Voltage (V)

TJ= 125 °C

TJ= 25 °C

On-Resistance vs. Gate-to-Source Voltage

50

40

30

Power (W)

20

10

0

10 10000.10.010.001 1001

Time (s)

Single Pulse Power

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100

Limited byR

10

1

- Drain Current (A)

D

I

0.1 TA=25 °C

Single Pulse

0.01

0.1 1 10 100

V

> minimum VGSat which R

* V

GS

*

DS(on)

BVDSS Limited

- Drain-to-Source Voltage (V)

DS

DS(on)

100 µs

1ms

10 ms

100 ms

1s 10 s

DC

is specified

Safe Operating Area, Junction-to-Ambient

Document Number: 69006

S09-0135-Rev. C, 02-Feb-09

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SiS412DN

Vishay Siliconix

25

20

- Drain Current (A)

D

I

15

10

Package Limited

5

0

0 255075100125150

- Case Temperature (°C)

T

C

Current Derating*

* The power dissipation PD is based on T

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

16

12

8

Power (W)

4

0

25 50 75 100 125 150

- Case Temperature (°C)

T

C

Power Derating

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Document Number: 69006 S09-0135-Rev. C, 02-Feb-09

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Vishay SIS412DN Schematic [ru]