Vishay SIS402DN Schematic

N-Channel 30-V (D-S) MOSFET

SiS402DN

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

30

0.006 at V

0.008 at V

(Ω)I

DS(on)

= 10 V 35

GS

= 4.5 V 35

GS

D

(A)

a, g

Qg (Typ.)

12 nC

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET

• 100 % R

®

Power MOSFET

Tested

g

• 100 % UIS Tested

PowerPAK® 1212-8

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

3.30 mm

D

8

D

7

6

Ordering Information:

S

1

D

5

Bottom View

SiS402DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

3.30 mm

S

2

S

3

G

4

• DC/DC Converter

- Notebook

- POL

D

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage V Gate-Source Voltage V

= 25 °C

T

C

= 70 °C

T

Continuous Drain Current (T

= 150 °C)

J

C

TA = 25 °C

TA = 70 °C Pulsed Drain Current I Avalanche Current Avalanche Energy E

Continuous Source-Drain Diode Current

Maximum Power Dissipation

L = 0.1 mH

T

= 25 °C

C

T

= 25 °C

A

= 25 °C

T

C

T

= 70 °C

C

= 25 °C

T

A

TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)

d, e

260

T

DS

GS

I

D

DM

I

AS

I

S

P

D

, T

J

stg

30

± 20

a, g

35

g

35

b, c

19

b, c

15

70 35 61 43

b, c

3.2 52 33

b, c

3.8

b, c

2

- 55 to 150

V

A

mJ

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain)

Notes: a. Based on T b. Surface Mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 81 °C/W. g. Package limited.

Document Number: 68684 S09-1086-Rev. C, 15-Jun-09

b, f

t ≤ 10 s

Steady State

R

thJA

R

thJC

24 33

1.9 2.4

). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed

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°C/W

1

SiS402DN

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

V

Drain-Source Breakdown Voltage

V

Temperature Coefficient

DS

V

Temperature Coefficient

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

a

V

DS

ΔV

DS/TJ

ΔV

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

V

DS

V

DS

V

DS

I

D

I

D

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

= 0 V, ID = 250 µA

GS

VDS = V

V

= 0 V, V

DS

V

= 30 V, V

DS

= 30 V, V

≥ 5 V, V

DS

V

= 10 V, ID = 19 A

GS

V

= 4.5 V, ID = 16.6 A

GS

V

= 15 V, ID = 19 A

DS

= 15 V, V

DS

= 15 V, V

V

= 15 V, RL = 1.5 Ω

DD

≅ 10 A, V

V

= 15 V, RL = 1.5 Ω

DD

≅ 10 A, V

TC = 25 °C

IS = 10 A, V

30 V

ID = 250 µA

, ID = 250 µA

GS

= ± 20 V

GS

= 0 V, TJ = 55 °C

GS

= 10 V

GS

1.15 2.2 V

= 0 V

50 A

- 6

24

mV/°C

± 100 nA

1

5

µA

0.0048 0.006

0.0064 0.008

82 S

1700

= 0 V, f = 1 MHz

GS

350

140

= 10 V, ID = 19 A

GS

= 4.5 V, ID = 19 A

GS

28 42

12 21

5.4

nC

4.6

f = 1 MHz 1.2 2.4 Ω

25 40

20 30

= 4.5 V, Rg = 1 Ω

GEN

25 40

15 25

12 20

10 15

= 10 V, Rg = 1 Ω

GEN

25 40

10 15

30

70

GS

= 0 V

0.8 1.2 V

25 50 ns

17 35 nC

13

12

Ω

pFOutput Capacitance

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 68684

S09-1086-Rev. C, 15-Jun-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SiS402DN

Vishay Siliconix

70

60

50

40

30

- Drain Current (A)I

D

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS=10V thru 4 V

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

0.010

0.008

VGS=4.5V

0.006

- On-Resistance (Ω)R

DS(on)

0.004

0.002 0 10203040506070

VGS=10V

VGS=3V

VGS=2V

10

TC= - 55 °C

8

6

4

- Drain Current (A)I

D

2

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

TC= 125 °C

- Gate-to-Source Voltage (V)

V

GS

TC= 25 °C

Transfer Characteristics

2100

1800

1500

1200

900

C - Capacitance (pF)

600

300

C

0

0 5 10 15 20 25 30

C

iss

C

oss

rss

On-Resistance vs. Drain Current and Gate Voltage

10

ID= 19 A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

061218 24 30

Document Number: 68684 S09-1086-Rev. C, 15-Jun-09

ID- Drain Current (A)

VDS=15V

VDS=24V

Qg- Total Gate Charge (nC)

Gate Charge

VDS- Drain-to-Source Voltage (V)

Capacitance

1.8

ID=19 A

1.6

1.4 VGS=10V,4.5V

1.2

- On-Resistance (Normalized)

1.0

DS(on)

R

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

-Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

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3

SiS402DN

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

- On-Resistance (Ω)R

DS(on)

0.015

ID=19 A

0.012

0.009

0.006

0.003

0.000

02468 10

VGS- Gate-to-Source Voltage (V)

TJ= 125 °C

TJ= 25 °C

On-Resistance vs. Gate-to-Source Voltage

50

40

30

100

10

- Source Current (A)I

S

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ= 150 °C

V

-Source-to-Drain Voltage (V)

SD

TJ= 25 °C

Source-Drain Diode Forward Voltage

2.4

2.2

2.0

(V)V

1.8

ID= 250 µA

GS(th)

1.6

1.4

1.2

1.0

- 50 - 25 0 25 50 75 100 125 150

TJ- Temperature (°C)

Threshold Voltage

100

Limited byR

10

- Drain Current (A)I

D

0.1

0.01

Power (W)

20

10

0

0.01

0.1 10 100

Single Pulse Power (Junction-to-Ambient)

IDMLimited

*

DS(on)

I

D(on)

Limited

1

TA= 25 °C

Single Pulse

0.1 1 10 100

VDS- Drain-to-Source Voltage (V)

> minimum VGSat which R

* V

GS

BVDSS Limited

DS(on)

100 µs

1ms

10 ms

100 ms

1s 10 s

DC

is specified

Safe Operating Area, Junction-to-Ambient

1

Time (s)

600

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Document Number: 68684

S09-1086-Rev. C, 15-Jun-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SiS402DN

Vishay Siliconix

80

60

- Drain Current (A) I

40

D

20

Package Limited

0

0 255075100125150

TC- Case Temperature (°C)

Current Derating*

* The power dissipation PD is based on T dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

60

50

40

30

Power (W)

20

10

0

25 50 75 100 125 150

- Case Temperature (°C)

T

C

Power Derating

limit.

Document Number: 68684 S09-1086-Rev. C, 15-Jun-09

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5

Vishay SIS402DN Schematic [ru]