Vishay SiR466DP Schematic

New Product

N-Channel 30-V (D-S) MOSFET

SiR466DP

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

30

0.0035 at V

0.0051 at V

PowerPAK SO-8

DS(on)

(Ω)

GS

= 10 V

= 4.5 V

a

g

Qg (Typ.)

21.5 nC

I

(A)

D

40

FEATURES

• Halogen-free

• TrenchFET

• 100 % R

• 100 % UIS Tested

®

Power MOSFET

Tested

g

APPLICATIONS

RoHS

COMPLIANT

• DC/DC Converter

6.15 mm

D

8

D

7

D

6

5

Bottom View

Ordering Information: SiR466DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

1

D

5.15 mm

S

2

S

3

G

4

- Low Side Switch

• Notebook PC

• Graphic Cards

• Server

D

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

= 25 °C

T

C

T

= 70 °C

C

TA = 25 °C TA = 70 °C

= 25 °C

T

C

TA = 25 °C

L = 0.1 mH

T

= 25 °C

C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

P

D

T

, T

J

stg

30

± 20

g

40

g

40

b, c

28

b, c

22.5 70

g

40

b, c

4.5 30

45 54

34.7

b, c

5.0

b, c

3.2

- 55 to 150 260

V

A

mJ

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Steady State

Notes: a. Based on T b. Surface Mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 10 s. d. See Solder Profile (

http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 °C/W. g. Package Limited.

Document Number: 68879 S-82018-Rev. A, 01-Sep-08

b, f

t ≤ 10 s

R

thJA

R

thJC

20 25

1.8 2.3

°C/W

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1

New Product

SiR466DP

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

VGS = 0 V, ID = 250 µA

ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

DS

= 30 V, V

DS

= 30 V, V

GS

≥ 5 V, V

DS

V

= 10 V, ID = 15 A

GS

V

= 4.5 V, ID = 10 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= 10 V

GS

VDS = 15 V, ID = 15 A

VDS = 15 V, V

V

= 15 V, V

DS

= 0 V, f = 1 MHz

GS

= 10 V, ID = 10 A

GS

= 4.5 V, ID = 10 A

GS

f = 1 MHz 0.2 0.8 1.6 Ω

V

= 15 V, RL = 1.5 Ω

DD

≅ 10 A, V

I

D

V

≅ 10 A, V

I

D

DD

= 10 V, Rg = 1 Ω

GEN

= 15 V, RL = 1.5 Ω

= 4.5 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 3 A

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

30 V

31

- 5.4

mV/°C

1.2 2.4 V

± 100 nA

1

10

30 A

0.0029 0.0035

0.0042 0.0051

65 S

2730

540

205

42.5 65

21.5 33

6.9

7.1

12 24

918

29 50

918

30 50

19 35

35 60

15 30

40

70

0.74 1.1 V

28 55 ns

21 42 nC

15

13

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 68879

S-82018-Rev. A, 01-Sep-08

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SiR466DP

Vishay Siliconix

70

VGS=10thru 4 V

56

42

VGS=3V

28

- Drain Current (A)I

D

14

0

0.0 0.5 1.0 1.5 2.0 2.5

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

0.0050

0.0045

0.0040

VGS=4.5V

10

8

6

4

- Drain Current (A)I

D

2

0

012345

TC= 25 °C

TC= 125 °C

- Gate-to-Source Voltage (V)

V

GS

TC= - 55 °C

Transfer Characteristics

3500

C

2800

2100

iss

- On-Resistance (Ω)R

0.0035

DS(on)

0.0030

0.0025 01428 42 56 70

VGS=10V

ID- Drain Current (A)

On-Resistance vs. Drain Current and Gate Voltage

10

ID=10A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0918 27 36 45

Qg- Total Gate Charge (nC)

VDS=15V

VDS=10V

VDS=20V

Gate Charge

1400

C - Capacitance (pF)

C

700

C

rss

0

061218 24 30

oss

- Drain-to-Source Voltage (V)

V

DS

Capacitance

1.8

ID=15A

1.6

1.4

1.2

- On-ResistanceR (Normalized)

1.0

DS(on)

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

-Junction Temperature (°C)

T

J

VGS=10V

On-Resistance vs. Junction Temperature

VGS=4.5V

Document Number: 68879 S-82018-Rev. A, 01-Sep-08

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3

New Product

SiR466DP

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

10

TJ= 150 °C

1

0.1

- Source Current (A)I

S

0.01

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-Source-to-Drain Voltage (V)

V

SD

TJ= 25 °C

Source-Drain Diode Forward Voltage

0.4

0.2

0.0

- 0.2

Variance (V)V

GS(th)

- 0.4

ID=5mA

0.020

0.016

0.012

- On-Resistance (Ω)R

0.008

DS(on)

0.004

0.000 012345678 910

VGS- Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

250

200

150

Power (W)

100

ID=15A

TJ= 125 °C

TJ=25 °C

- 0.6

- 0.8

- 50 - 25 0 25 50 75 100 125 150

TJ- Temperature (°C)

ID= 250 µA

Threshold Voltage

100

Limited byR

10

1

- Drain Current (A)

D

I

0.1

TA= 25 °C

Single Pulse

0.01

* V

Safe Operating Area, Junction-to-Ambient

*

DS(on)

BVDSS Limited

0.1 1 10

- Drain-to-Source Voltage (V)

V

DS

> minimum VGSat which R

GS

50

0

DS(on)

011100.00.010.1

Time (s)

Single Pulse Power, Junction-to-Ambient

1ms

10 ms

100 ms

1s

10 s

DC

100

is specified

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Document Number: 68879

S-82018-Rev. A, 01-Sep-08

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

80

60

SiR466DP

Vishay Siliconix

40

- Drain Current (A)

D

I

20

0

0 25 50 75 100 125 150

65

52

39

Power (W)

26

13

0

0 25 50 75 100 125 150

T

- Case Temperature (°C)

C

Power, Junction-to-Case

Package Limited

- Case Temperature (°C)

T

C

Current Derating*

2.5

2.0

1.5

Power (W)

1.0

0.5

0.0

0 25 50 75 100 125 150

-Ambient Temperature (°C)

T

A

Power, Junction-to-Ambient

* The power dissipation PD is based on T dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

limit.

Document Number: 68879

www.vishay.com

S-82018-Rev. A, 01-Sep-08

5

Vishay SiR466DP Schematic [ru]

Specifications and Main Features

Frequently Asked Questions

User Manual