Vishay SIR428DP Schematic

New Product

N-Channel 30-V (D-S) MOSFET

SiR428DP

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

30

0.0075 at V

0.0095 at V

DS(on)

(Ω)

GS

= 10 V

= 4.5 V

a, g

g

Qg (Typ.)

9.5 nC

I

(A)

D

30

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET

• 100 % R

®

Power MOSFET

Tested

g

• 100 % UIS Tested

PowerPAK® SO-8

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

6.15 mm

D

8

D

7

D

6

5

Bottom View

Ordering Information: SIR428DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

1

D

5.15 mm

S

2

S

3

G

4

• Synchronous Rectification

•VRM

• Server

D

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

= 25 °C

T

C

= 70 °C

T

C

TA = 25 °C TA = 70 °C

T

= 25 °C

C

TA = 25 °C

L = 0.1 mH

= 25 °C

T

C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

P

D

T

, T

J

stg

30

± 20

g

30

g

30

b, c

17.4

b, c

13.8 60

g

30

b, c

3.7 20

20

22.7

14.5

b, c

4.1

b, c

2.6

- 55 to 150 260

V

A

mJ

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t ≤ 10 s

Maximum Junction-to-Case (Drain) Steady State

Notes: a. Based on T b. Surface Mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 70 °C/W. g. Package limited.

Document Number: 64987 S09-1093-Rev. A, 15-Jun-09

R

thJA

R

thJC

22 30

4.5 5.5

°C/W

www.vishay.com

1

New Product

SiR428DP

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = 250 µA

ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

DS

= 30 V, V

DS

= 30 V, V

GS

≥ 5 V, V

DS

V

= 10 V, ID = 10 A

GS

V

= 4.5 V, ID = 10 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= 10 V

GS

VDS = 10 V, ID = 10 A

VDS = 15 V, V

= 15 V, V

V

DS

= 0 V, f = 1 MHz

GS

= 10 V, ID = 10 A

GS

= 4.5 V, ID = 10 A

GS

f = 1 MHz 0.2 0.5 1.0 Ω

V

= 15 V, RL = 1.5 Ω

DD

I

≅ 10 A, V

D

≅ 10 A, V

I

D

V

= 10 V, Rg = 1 Ω

GEN

= 10 V, RL = 1 Ω

DD

= 4.5 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 3 A

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

30 V

27

- 4.4

mV/°C

1.2 2.5 V

± 100 nA

1

10

30 A

0.0061 0.0075

0.0077 0.0095

46 S

1117

274

80

21 32

9.5 14.5

2.8

816

10 20

17 34

816

16 32

11 22

18 36

918

30

60

0.75 1.1 V

22 40 ns

15.5 28 nC

14

8

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

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Document Number: 64987

S09-1093-Rev. A, 15-Jun-09

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SiR428DP

Vishay Siliconix

60

VGS=10V thru 4 V

48

36

24

- Drain Current (A)I

D

12

0

0.0 0.5 1.0 1.5 2.0 2.5

V

- Drain-to-Source Voltage (V)

DS

Output Characteristics

0.010

0.009

W)

0.008

VGS=4.5V

VGS=3V

10

8

6

4

- Drain Current (A)I

D

2

0

TC= 125 °C

TC=25 °C

TC=--55 °C

012345

V

- Gate-to-Source Voltage (V)

GS

Transfer Characteristics

1500

C

1200

900

iss

0.007

- On-Resistance (R

DS(on)

0.006

0.005 0 12243648 60

ID- Drain Current (A)

On-Resistance vs. Drain Current and Gate Voltage

10

ID=10A

8

VDS=10V

6

VDS=15V

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0.0 4.4 8.8 13.2 17.6 22.0

Qg- Total Gate Charge (nC)

VDS=20V

Gate Charge

VGS=10V

600

C

C - Capacitance (pF)

300

C

rss

0

0 6 12 18 24 30

oss

VDS - Drain-to-Source Voltage (V)

Capacitance

1.7

ID=10A

1.5

VGS=10V

1.3

- On-Resistance

(Normalized)

1.1

DS(on)

R

0.9

0.7

- 50 - 25 0 25 50 75 100 125 150

TJ- Junction Temperature (°C)

VGS=4.5V

On-Resistance vs. Junction Temperature

Document Number: 64987 S09-1093-Rev. A, 15-Jun-09

www.vishay.com

3

Vishay SIR428DP Schematic [ru]