Vishay SIR404DP Schematic

New Product

N-Channel 20-V (D-S) MOSFET

SiR404DP

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

0.00160 at V

20

0.00175 at V

0.00225 at V

(Ω)

DS(on)

= 10 V

GS

= 4.5 V

GS

= 2.5 V

GS

PowerPAK® SO-8

a

I

(A)

D

Qg (Typ.)

60

64.5 nC

60

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET

• 100 % R

• 100 % UIS Tested

• 2.5 V and 3.3 V Gate Drive MOSFET for dc-to-dc Applications

®

Gen III Power MOSFET

Tested

g

• Compliant to RoHS Directive 2002/95/EC

6.15 mm

D

8

D

7

D

6

5

Bottom View

Ordering Information: SiR404DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

1

D

5.15 mm

S

2

S

3

G

4

APPLICATIONS

• Fixed Telecom

• OR-ing

• POL

D

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

= 25 °C

T

C

= 70 °C

T

C

TA = 25 °C TA = 70 °C

T

= 25 °C

C

TA = 25 °C

L = 0.1 mH

= 25 °C

T

C

T

= 70 °C

C

= 25 °C

T

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

± 12

60 60

45.6

36.6 100

60

5.6

125

20

50

b, c

a

b, c

a

V

A

mJ

104

P

D

, T

T

J

stg

66.6

b, c

6.25

b, c

4.0

- 55 to 150 260

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain)

Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 54 °C/W.

Document Number: 64815 S09-0873-Rev. A, 18-May-09

b, f

t ≤ 10 s

Steady State

R

thJA

R

thJC

15 20

0.9 1.2

°C/W

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

www.vishay.com

1

New Product

SiR404DP

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = 250 µA

ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 12 V

V

DS

= 20 V, V

DS

= 20 V, V

GS

≥ 5 V, V

DS

V

= 10 V, ID = 20 A

GS

V

= 4.5 V, ID = 20 A

GS

V

= 2.5 V, ID = 15 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= 10 V

GS

VDS = 10 V, ID = 20 A

VDS = 10 V, V

V

= 10 V, V

DS

= 10 V, V

V

DS

= 0 V, f = 1 MHz

GS

= 2.5 V, ID = 20 A

GS

= 3.3 V, ID = 20 A

GS

= 4.5 V, ID = 20 A

GS

f = 1 MHz 0.2 1.0 2 Ω

V

= 10 V, RL = 1.0 Ω

DD

≅ 10 A, V

I

D

V

I

≅ 10 A, V

D

DD

= 10 V, Rg = 1 Ω

GEN

= 10 V, RL = 1.0 Ω

= 4.5 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 5 A

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

20 V

17

- 4.4

mV/°C

0.6 1.5 V

± 100 nA

1

10

30 A

0.0013 0.00160

0.0014 0.00175

0.0018 0.00225

150 S

8130

1570

735

36.5

47.5

64.5 97

11.4

12.1

14 28

918

68 120

918

35 60

20 40

123 210

26 50

60

100

0.65 1.1 V

38 75 ns

36 72 nC

21

17

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

www.vishay.com 2

Document Number: 64815

S09-0873-Rev. A, 18-May-09

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SiR404DP

Vishay Siliconix

80

VGS=10V thru 3 V

64

48

32

- Drain Current (A)I

D

16

0

0.0 0.5 1.0 1.5 2.0 2.5

V

- Drain-to-Source Voltage (V)

DS

Output Characteristics

0.0025

0.0021

VGS=2.5V

0.0017

VGS=4.5V

10

8

6

4

- Drain Current (A)I

D

2

0

0.0 0.5 1.0 1.5 2.0 2.5

TC= 25 °C

TC= 125 °C

V

- Gate-to-Source Voltage (V)

GS

TC= - 55 °C

Transfer Characteristics

10 000

C

iss

8000

6000

0.0013

- On-Resistance (Ω)R

DS(on)

0.0009

0.0005 0163248 64 80

ID- Drain Current (A)

VGS=10V

On-Resistance vs. Drain Current and Gate Voltage

10

ID=20A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0 306090120150

VDS=10V

VDS=5V

VDS=15V

Qg- Total Gate Charge (nC)

Gate Charge

4000

C - Capacitance (pF)

2000

C

rss

0

048 12 16 20

VDS- Drain-to-Source Voltage (V)

C

Capacitance

1.8

ID=20A

1.5

1.2

- On-ResistanceR (Normalized)

DS(on)

0.9

0.6

- 50 - 25 0 25 50 75 100 125 150

-Junction Temperature (°C)

T

J

VGS=10V

On-Resistance vs. Junction Temperature

oss

VGS=2.5V

Document Number: 64815 S09-0873-Rev. A, 18-May-09

www.vishay.com

3

New Product

SiR404DP

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

TJ= 150 °C

10

0.005

ID=20A

0.004

1

0.1

- Source Current (A)I

S

0.01

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-Source-to-Drain Voltage (V)

V

SD

Source-Drain Diode Forward Voltage

0.5

0.2

- 0.1

Variance (V)V

- 0.4

GS(th)

- 0.7

TJ= 25 °C

ID= 250 µA

ID=5mA

0.003

0.002

- On-Resistance (Ω)

DS(on)

R

0.001

0.000 012345678 910

VGS- Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

200

160

120

Power (W)

80

40

TJ= 125 °C

TJ=25 °C

- 1.0

- 50 - 25 0 25 50 75 100 125 150

www.vishay.com 4

TJ- Temperature (°C)

Threshold Voltage

- Drain Current (A)

D

I

100

Limited byR

10

1

0.1

Single Pulse

0.01

* V

*

DS(on)

TA= 25 °C

0.1 1 10

- Drain-to-Source Voltage (V)

V

DS

> minimum VGSat which R

GS

BVDSS Limited

Safe Operating Area, Junction-to-Ambient

0

DS(on)

0.1

Time (s)

Single Pulse Power, Junction-to-Ambient

1ms

10 ms

100 ms

1s

10 s

DC

100

is specified

Document Number: 64815

S09-0873-Rev. A, 18-May-09

011100.00.01

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

210

168

126

SiR404DP

Vishay Siliconix

- Drain Current (A)

D

I

125

100

75

Power (W)

50

25

0

0 25 50 75 100 125 150

84

42

0

0 25 50 75 100 125 150

Package Limited

T

- Case Temperature (°C)

C

Current Derating*

3.0

2.4

1.8

Power (W)

1.2

0.6

0.0 0 25 50 75 100 125 150

T

- Case Temperature (°C)

C

Power, Junction-to-Case

* The power dissipation PD is based on T dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max)

-Ambient Temperature (°C)

T

A

Power, Junction-to-Ambient

limit.

Document Number: 64815

www.vishay.com

S09-0873-Rev. A, 18-May-09

5

Vishay SIR404DP Schematic [ru]