Vishay sir172dp Datasheet

PRODUCT SUMMARY

Ordering Information: SiR172DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

VDS (V) R

30

0.0089 at V

0.0124 at V

DS(on)

()

GS

= 10 V

= 4.5 V

N-Channel 30-V (D-S) MOSFET

FEATURES

a, g

I

(A)

D

20

Qg (Typ.)

9.8 nC

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET

• Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile

•

Optimized for High-Side Synchronous Rectifier Operation

• 100 % Rg and UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Notebook CPU Core

- High-Side Sw

itch

SiR172DP

Vishay Siliconix

D

G

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Steady State

Notes: a. Base on T b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 °C/W. g. Package limited.

Document Number: 65271 S11-1647-Rev. B, 22-Aug-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

= 25 °C.

C

b, f

d, e

= 25 °C

T

C

T

= 70 °C

C

TA = 25 °C TA = 70 °C

T

= 25 °C

C

TA = 25 °C

L = 0.1 mH

T

= 25 °C

C

T

= 70 °C

C

T

= 25 °C

A

TA = 70 °C

t  10 s

N-Channel MOSFET

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

± 20

20 20

16.1

12.9

20

3.2

30

g

b, c

50

g

b, c

21 22

29.8

P

D

T

, T

J

stg

19

b, c

3.9

b, c

2.5

- 55 to 150 260

R

thJA

R

thJC

27 32

3.5 4.2

S

V

A

mJ

W

°C

°C/W

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

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This document is subject to change without notice.

1

SiR172DP

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient

DS

V

Temperature Coefficient

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l a y T i m e

Rise Time

Turn-Off Delay Time

Fall Time

a

V

DS

V

DS/TJ

V

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VGS = 0 V, ID = 250 µA

ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

DS

= 30 V, V

DS

= 30 V, V

V

GS

5 V, V

DS

V

= 10 V, ID = 16.1 A

GS

= 4.5 V, ID = 13.6 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= 10 V

GS

VDS = 15 V, ID = 16.1 A

VDS = 15 V, V

V

= 15 V, V

DS

= 0 V, f = 1 MHz

GS

= 10 V, ID = 16.1 A

GS

= 4.5 V, ID = 16.1 A

GS

f = 1 MHz 0.2 1.2 2.4 

V

= 15 V, RL = 1.5 

DD

 10 A, V

I

D

V

 10 A, V

I

D

DD

= 4.5 V, Rg = 1 

GEN

= 15 V, RL = 1.5 

= 10 V, Rg = 1 

GEN

TC = 25 °C

IS = 10 A

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

30 V

28

- 5.5

mV/°C

1.2 2.5 V

± 100 nA

1

10

20 A

0.0074 0.0089

0.0103 0.0124

49 S

997

195

120

19.5 30

9.8 15

3.7

19 29

13 20

918

18 27

815

20

50

0.85 1.2 V

14 28 ns

510nC

7

µA



pFOutput Capacitance

nC

ns

A

ns

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

This document is subject to change without notice.

Document Number: 65271

S11-1647-Rev. B, 22-Aug-11

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0.006

0.009

0.012

0.015

0 1020304050

R

DS(on)

- On-Resistance (W)

I

D

- Drain Current (A)

VGS=4.5V

VGS=10V

0

2

4

6

8

10

0 3 6 9 12 15 18 21

ID= 16.1 A

- Gate-to-Source Voltage (V)

Qg- Total Gate Charge (nC)

V

GS

VDS= 24 V

VDS= 15 V

VDS= 8 V

0

1

2

3

4

5

01234

VGS- Gate-to-Source Voltage (V)

I

D

- Drain Current (A)

TC= 25 °C

TC= 125 °C

TC= - 55 °C

0.5

0.8

1.1

1.4

1.7

- 50 - 25 0 25 50 75 100 125 150

TJ- Junction Temperature (°C)

(Normalized)- On-Resistance

R

DS(on)

VGS=4.5V

ID= 16.1 A

VGS=10V

50

SiR172DP

Vishay Siliconix

40

30

20

- Drain Current (A)

D

I

10

0

0.0 0.3 0.6 0.9 1.2 1.5

VDS- Drain-to-Source Voltage (V)

VGS=10V thru 5 V

VGS=4V

Output Characteristics

1500

C

1200

900

600

C - Capacitance (pF)

300

iss

C

oss

Transfer Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Document Number: 65271 S11-1647-Rev. B, 22-Aug-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Gate Charge

C

rss

0

0 6 12 18 24 30

On-Resistance vs. Junction Temperature

This document is subject to change without notice.

VDS- Drain-to-Source Voltage (V)

Capacitance

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3

SiR172DP

0.1

1

10

100

0.0 0.3 0.6 0.9 1.2

TJ= 150 °C

V

SD

- Source-to-Drain Voltage (V)

I

S

- Source Current (A)

TJ= 25 °C

1.0

1.3

1.6

1.9

2.2

2.5

- 50 - 25 0 25 50 75 100 125 150

I

D

=250µA

V (V)

GS(th)

TJ- Temperature (°C)

0

10

20

30

40

0.01 0.1 1 10 100 1000 Time (s)

Power (W)

VDS- Drain-to-Source Voltage (V)

* V

GS

> minimum VGSat which R

DS(on)

is specified

100

1

0.1 1 10 100

0.01

10

I

D

- Drain Current (A)

0.1

TA= 25 °C

Single Pulse

10 ms

100 ms

DC

Limited byR

DS(on)

*

BVDSS Limited

1ms

100 µs

1s 10 s

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0.03

0.02

- On-Resistance (W)

0.01

DS(on)

R

0.00

Source-Drain Diode Forward Voltage

TJ= 125 °C

TJ= 25 °C

2345678 910

VGS- Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Single Pulse Power, Junction-to-Ambient

Safe Operating Area, Junction-to-Ambient

Document Number: 65271

S11-1647-Rev. B, 22-Aug-11

This document is subject to change without notice.

Vishay sir172dp Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual