Vishay SiHP18N50C Data Sheet

N-Channel MOSFET

G

D

S

TO-220AB

G

D

S

Power MOSFET

SiHP18N50C

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) at TJ max. 560

R

()V

DS(on)

Q

(Max.) (nC) 76

g

Q

(nC) 21

gs

Q

(nC) 29

gd

Configuration Single

= 10 V 0.225

GS

FEATURES

• Low Figure-of-Merit Ron x Q

• 100 % Avalanche Tested

• High Peak Current Capability

• dV/dt Ruggedness

• Improved t

• Improved Gate Charge

rr/Qrr

g

• High Power Dissipations Capability

• Compliant to RoHS Directive 2002/95/EC

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free SiHP18N50C-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current (T

Pulsed Drain Current

b

= 150 °C)

J

a

VGS at 10 V

C

= 100 °C 11

C

DS

± 30

GS

I

D

IDM 72

Linear Derating Factor TO-220AB 1.8 W/°C

Single Pulse Avalanche Energy

Maximum Power Dissipation TO-220AB P

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature)

c

d

d

for 10 s 300

E

AS

D

dV/dt 5 V/ns

, T

J

stg

Notes

a. Drain current limited by maximum junction temperature.
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. V

= 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 , IAS = 17 A.

DD

d. I

 18 A, dI/dt  380 A/μs, VDD  VDS, TJ  150 °C.

SD

e. 1.6 mm from case.

500

18

361 mJ

223 W

- 55 to + 150

V

AT

°C

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91374 www.vishay.com
S11-0520-Rev. D, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

SiHP18N50C

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient TO-220 R

Maximum Junction-to-Case (Drain) TO-220 R

thJA

thJC

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.6 - V/°C

DS

Gate-Source Threshold Voltage (N) V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance

a

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 10 A - 0.225 0.270 

DS(on)

g

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Internal Gate Resistance R

Total Gate Charge Q

iss

- 300 360

oss

-2632

rss

f = 1.0 MHz, open drain - 1.1 - 

g

g

V

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

-29-

gd

d(on)

r

-32-

d(off)

-44-

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current I

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Current I

S

SM

SD

rr

rr

RRM

MOSFET symbol
showing the
integral reverse
p - n junction diode

Note

a. Repetitive rating; pulse width limited by maximum junction temperature.

VGS = 0 V, ID = 250 μA 500 - - V

VDS = VGS, ID = 250 μA 3.0 - 5.0 V

= ± 30 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 25

V

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

DS

VDS = 50 V, ID = 10 A - 6.4 - S

VGS = 0 V,

= 25 V,

V

DS

f = 1.0 MHz

= 10 V ID = 18 A, VDS = 400 V

GS

V

= 250 V, ID = 18 A

DD

R

= 7.5 , V

g

TJ = 25 °C, IS = 18 A, VGS = 0 V - - 1.5 V

TJ = 25 °C, IF = IS,

dI/dt = 100 A/μs, V

-62

-0.56

- 2451 2942

-6576

-80-

-27-

= 10 V

GS

D

G

S

--18

--72

- 503 - ns

= 35 V

R

-6.7-μC

-30-A

°C/W

μA

pFOutput Capacitance C

nC Gate-Source Charge Qgs -21-

ns

A

The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar
product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.

www.vishay.com Document Number: 91374
2 S11-0520-Rev. D, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

0

10

20

30

40

50

60

70

0612 18

24

30

7.0 V

Bottom

To p

V

GS

15 V
14 V
13 V
12 V
11 V
10 V

9.0 V

8.0 V

7.0 V

6.0 V

5.0 V

TJ = 25 °C

0

I

D

, Drain Current (A)

V

GS

,

Gate-to-Source Voltage (V)

0.01

0.1

1

10

100

5678910

TJ= 150 °C

T

J

= 25 °C

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

0

0.5

1

1.5

2

2.5

3

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

ID = 17 A

V

GS

= 10 V

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

SiHP18N50C

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 150 °C

, Drain Current (A)

D

I

40

30

20

10

0 6 12 18 24 30

To p

Bottom

V

GS

15 V
14 V
13 V
12 V
11 V
10 V

9.0 V

8.0 V

7.0 V

6.0 V

5.0 V

TJ = 150 °C

7.0 V

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, T

= 150 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91374 www.vishay.com
S11-0520-Rev. D, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000