Vishay IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Data Sheet

D2PAK (TO-263)

G

D

S

I2PAK (TO-262)

G

D

S

IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 60

()V

R

DS(on)

Q

(Max.) (nC) 18

g

Q

(nC) 4.5

gs

Q

(nC) 12

gd

Configuration Single

= 5 V 0.10

GS

D

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Logic-Level Gate Drive

•R

Specified at VGS = 4 V and 5 V

DS (on)

• 175°C Operating Temperature

•Fast Switching

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and

G

cost-effectiveness.

2

The D

PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible

S

N-Channel MOSFET

on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
The through-hole version (IRLZ24L, SiHLZ24L) is available
for low-profile application.

ORDERING INFORMATION

Package D2PAK (TO-263) I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHLZ24S-GE3 SiHLZ24L-GE3

Lead (Pb)-free

- IRLZ24LPbF

- SiHLZ24L-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current
Linear Derating Factor 0.40
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 25 V, starting TJ = 25 °C, L = 444 μH, Rg = 25 , IAS = 17 A (see fig. 12).

DD

c. I

 17 A, dI/dt  140 A/μs, VDD  VDS, TJ  175 °C.

SD

d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material)

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90416
S11-1044-Rev. C, 30-May-11 1

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

a

e

b

e

c

This document is subject to change without notice.

GS

at 5 V

C

= 100 °C 12

C

= 25 °C

C

TA = 25 °C 3.7

www.vishay.com

DS

± 10

GS

I

D

IDM 68

E

AS

P

D

dV/dt 4.5 V/ns

, T

J

stg

60

17

0.025
110 mJ

60

- 55 to + 175

d

www.vishay.com/doc?91000

V

AT

W/°C

W

°C

D

S

G

IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R
Maximum Junction-to-Ambient

(PCB Mount)

a

Maximum Junction-to-Case (Drain) R

thJA

R

thJA

thJC

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.060 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Dynamic

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

www.vishay.com Document Number: 90416
2 S11-1044-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

DS

GS(th)

V

GSS

DSS

V

VGS = 5 V ID = 10 A

DS(on)

fs

iss

- 360 -

oss

-53-

rss

g

--4.5

gs

--12

gd

d(on)

r

-23-

d(off)

-41-

f

D

V

GS

V

GS

Between lead,
6 mm (0.25") from
package and center of

S

S

I

SM

SD

rr

rr

on

die contact

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs

This document is subject to change without notice.

-62

-40

°C/W

-2.5

VGS = 0, ID = 250 μA 60 - - V

VDS = VGS, ID = 250 μA 1.0 - 2.0 V

= ± 10 V - - ± 100 nA

GS

VDS = 60 V, VGS = 0 V - - 25

= 48 V, VGS = 0 V, TJ = 150 °C - - 250

DS

= 4 V ID = 8.5 A

VDS = 25 V, ID = 10 A

b

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

- - 0.10

- - 0.14

7.3 - - S

- 870 -

--18

= 17 A, VDS = 48 V,

I

= 5 V

D

see fig. 6 and 13

b

-11-

V

= 30 V, ID = 17 A,

DD

R

= 9 , RD = 1.7 , see fig. 10

g

b

- 110 -

-4.5-

-7.5-

G

TJ = 25 °C, IS = 17 A, VGS = 0 V

D

S

b

--17

--68

--1.5V

- 110 260 ns

b

- 0.49 1.5 μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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μA



pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 175 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 90416 www.vishay.com
S11-1044-Rev. C, 30-May-11 3

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000

IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 90416
4 S11-1044-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

www.vishay.com/doc?91000