Vishay IRLZ14, SiHLZ14 Data Sheet

N-Channel MOSFET

G

D

S

TO-220AB

G

D

S

Power MOSFET

IRLZ14, SiHLZ14

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 60

R

(Ω)V

DS(on)

Q

(Max.) (nC) 8.4

g

Q

(nC) 3.5

gs

Q

(nC) 6.0

gd

Configuration Single

= 5.0 V 0.20

GS

FEATURES

• Dynamic dV/dt Rating

• Logic-Level Gate Drive

•R

DS(on)

• 175 °C Operating Temperature

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRLZ14PbF
SiHLZ14-E3
IRLZ14
SiHLZ14

Specified at VGS = 4 V and 5 V

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

Linear Derating Factor 0.29 W/°C

Single Pulse Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 25 V, starting TJ = 25 °C, L = 0.79 mH, Rg = 25 Ω, IAS = 10 A (see fig. 12).

DD

c. I

≤ 10 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91325 www.vishay.com
S11-0519-Rev. C, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

a

b

c

This datasheet is subject to change without notice.

at 5.0 V

GS

C

= 100 °C 7.2

C

= 25 °C P

C

DS

± 10

GS

I

D

IDM 40

E

AS

D

dV/dt 4.5 V/ns

, T

J

stg

60

10

39.5 mJ

43 W

- 55 to + 175

d

10 lbf · in

1.1 N · m

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V

AT

°C

IRLZ14, SiHLZ14

Vishay Siliconix

THERMAL RESISTANCE

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

--62

-0.50-

°C/WCase-to-Sink, Flat, Greased Surface R

--3.5

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

ΔV

DS/TJ

GS(th)

V

GSS

DSS

DS(on)

fs

V

V

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

iss

-170-

oss

-42-

rss

g

--3.5

gs

--6.0

gd

d(on)

r

-17-

d(off)

-26-

f

D

V

Between lead,
6 mm (0.25") from
package and center of

Internal Source Inductance L

S

die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the
integral reverse

p - n junction diode

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

www.vishay.com Document Number: 91325
2 S11-0519-Rev. C, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

VGS = 0 V, ID = 250 μA 60 - - V

Reference to 25 °C, I

= 1 mA

D

- 0.070 -

VDS = VGS, ID = 250 μA 1.0 - 2.0 V

= ± 10 V - - ± 100 nA

GS

VDS = 60 V, VGS = 0 V - - 25

V

= 48 V, VGS = 0 V, TJ = 150 °C - - 250

DS

= 5.0 V ID = 6.0 A

GS

= 4.0 V ID = 5.0 A

GS

VDS = 25 V, ID = 6.0 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

b

- - 0.20

- - 0.28

3.5 - - S

-400-

--8.4

= 10 A, VDS = 48 V

I

= 5.0 V

GS

D

see fig. 6 and 13

b

-9.3-

= 30 V, ID = 10 A

V

DD

R

= 12 Ω, RD= 2.8 Ω

g

see fig. 10

b

G

G

TJ = 25 °C, IS = 10 A, VGS = 0 V

TJ = 25 °C, IF = 10 A,

dI/dt = 100 A/μs

b

D

S

D

S

b

-110-

-4.5-

-7.5-

--10

--40

--1.6V

- 93 130 ns

- 0.34 0.65 μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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V/°C

μA

Ω

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

IRLZ14, SiHLZ14

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Vishay Siliconix

Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, T

Document Number: 91325 www.vishay.com
S11-0519-Rev. C, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

= 175 °C

C

This datasheet is subject to change without notice.

Fig. 4 - Normalized On-Resistance vs. Temperature

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