Vishay IRLR110, IRLU110, SiHLR110, SiHLU110 Data Sheet
IRLR110, IRLU110, SiHLR110, SiHLU110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 100
R
(Ω)V
DS(on)
Q
(Max.) (nC) 6.1
g
Q
(nC) 2.0
gs
Q
(nC) 3.3
gd
Configuration Single
DPAK
(TO-252)
D
G
IPAK
(TO-251)
D
S
G
= 5.0 V 0.54
GS
G
S
D
N-Channel MOSFET
D
S
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRLR110, SiHLR110)
• Straight Lead (IRLU110, SiHLU110)
• Available in Tape and Reel
• Logic-Level Gate Drive
•R
Specified at VGS = 4 V and 5 V
DS(on)
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU, SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHLR110-GE3 SiHLR110TR-GE3 SiHLR110TRL-GE3 SiHLU110-GE3
Lead (Pb)-free
SnPb
IRLR110PbF IRLR110TRPbF
SiHLR110-E3 SiHLR110T-E3
IRLR110 IRLR110TR
SiHLR110 SiHLR110T
a
a
a
a
IRLR110TRLPbF IRLU110PbF
SiHLR110TL-E3 SiHLU110-E3
IRLR110TRL
SiHLR110TL
a
a
IRLU110
SiHLU110
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 5.0 V
GS
C
= 100 °C 2.7
C
DS
± 10
GS
I
D
IDM 17
Linear Derating Factor 0.20
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
e
b
a
a
= 25 °C
e
c
C
TA = 25 °C 2.5
E
AS
I
AR
E
AR
P
D
dV/dt 5.5 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 260
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting TJ = 25 °C, L = 8.1 mH, Rg = 25 Ω, IAS = 4.3 A (see fig. 12).
DD
≤ 5.6 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
c. I
SD
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
100
4.3
0.020
100 mJ
4.3 A
2.5 mJ
25
- 55 to + 150
d
V
AT
W/°C
W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91323 www.vishay.com
S10-1139-Rev. C, 17-May-10 1
IRLR110, IRLU110, SiHLR110, SiHLU110
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain) R
thJA
R
thJA
thJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
DS
GS(th)
V
GSS
DSS
DS(on)
fs
iss
-80-
oss
-15-
rss
g
--2.0
gs
--3.3
gd
d(on)
r
-16-
d(off)
-17-
f
D
S
S
I
SM
SD
rr
rr
on
- - 110
--50
--5.0
VGS = 0 V, ID = 250 μA 100 - - V
VDS = VGS, ID = - 250 μA 1.0 - 2.0 V
= ± 10 V - - ± 100 nA
GS
VDS = 100 V, VGS = 0 V - - 25
V
= 80 V, VGS = 0 V, TJ = 125 °C - - 250
DS
= 5.0 V ID = 2.6 A
V
GS
V
= 4.0 V ID = 2.2 A
GS
b
b
- - 0.54
- - 0.76
VDS = 50 V, ID = 2.6 A 2.3 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
- 250 -
--6.1
= 5.6 A, VDS = 80 V,
I
V
GS
= 5.0 V
D
see fig. 6 and 13
b
-9.3-
VDD = 50 V, ID = 5.6 A,
R
= 12 Ω, RD = 8.4 Ω, see fig. 10
g
Between lead,
D
6 mm (0.25") from
package and center of
die contact
c
G
S
MOSFET symbol
showing the
integral reverse
G
p - n junction diode
TJ = 25 °C, IS =4.3 A, VGS = 0 V
b
TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μs
b
D
S
-47-
-4.5-
-7.5-
--4.3
--17
--2.5V
- 100 130 ns
b
- 0.50 0.65 μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
°C/W
μA
Ω
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91323
2 S10-1139-Rev. C, 17-May-10
IRLR110, IRLU110, SiHLR110, SiHLU110
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91323 www.vishay.com
S10-1139-Rev. C, 17-May-10 3
IRLR110, IRLU110, SiHLR110, SiHLU110
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com Document Number: 91323
4 S10-1139-Rev. C, 17-May-10
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