Vishay IRLIZ14G, SiHLIZ14G Data Sheet
Power MOSFET
IRLIZ14G, SiHLIZ14G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 60
(Ω)V
R
DS(on)
Q
(Max.) (nC) 8.4
g
Q
(nC) 3.5
gs
Q
(nC) 6.0
gd
Configuration Single
= 5.0 V 0.20
GS
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kV
f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Logic-Level Gate Drive
•R
• Fast Switching
Specified at VGS = 4 V and 5 V
DS(on)
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
TO-220 FULLPAK
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
G
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
S
D
G
N-Channel MOSFET
S
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
ORDERING INFORMATION
Package TO-220 FULLPAK
Lead (Pb)-free
SnPb
IRLIZ14GPbF
SiHLIZ14G-E3
IRLIZ14G
SiHLIZ14G
(t = 60 s;
RMS
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature) for 10 s
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
= 25 V, starting TJ = 25 °C, L = 0.79 mH, RG = 25 Ω, IAS = 10 A (see fig. 12).
b. V
DD
≤ 10 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
c. I
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91315 www.vishay.com
S09-0896-Rev. B, 25-May-09 1
a
b
c
at 5.0 V
GS
C
= 100 °C
T
C
= 25 °C P
C
DS
GS
I
D
IDM
E
AS
D
dV/dt
, T
J
stg
60
± 10
8.0
5.7
32
0.18
39.5
27
4.5
- 55 to + 175
d
300
10
1.1
V
A
W/°C
mJ
W
V/ns
°C
lbf · in
N · m
IRLIZ14G, SiHLIZ14G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thJC
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.070 - V/°C
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Drain to Sink Capacitance C f = 1.0 MHz - 12 -
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
DS
GS(th)
V
GSS
DSS
DS(on)
fs
iss
- 170 -
oss
-42-
rss
g
--3.5
gs
--6.0
gd
d(on)
r
-17-
d(off)
-26-
f
D
V
V
GS
V
GS
V
GS
Between lead,
6 mm (0.25") from
package and center of
S
S
I
SM
SD
rr
rr
on
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/µs
-65
-5.5
°C/W
VGS = 0 V, ID = 250 µA 60 - - V
VDS = VGS, ID = 250 µA 1.0 - 2.0 V
= ± 10 V - - ± 100 nA
GS
VDS = 60 V, VGS = 0 V - - 25
= 48 V, VGS = 0 V, TJ = 150 °C - - 250
DS
= 5.0 V ID = 4.8 A
= 4.0 V ID = 4.0 A
VDS = 25 V, ID = 4.8 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
b
b
b
- - 0.20
- - 0.28
3.6 - - S
- 400 -
--8.4
= 10 A, VDS = 48 V,
I
= 5.0 V
D
see fig. 6 and 13
b
-9.3-
= 30 V, ID = 10 A,
V
DD
R
= 12 Ω, RD= 2.8 Ω,
G
see fig. 10
b
G
G
TJ = 25 °C, IS = 8.0 A, VGS = 0 V
D
S
D
S
b
- 110 -
-4.5-
-7.5-
--8.0
--32
--1.6V
- 65 130 ns
b
- 0.33 0.65 µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
µA
Ω
pF
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91315
2 S09-0896-Rev. B, 25-May-09
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
IRLIZ14G, SiHLIZ14G
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 175 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91315 www.vishay.com
S09-0896-Rev. B, 25-May-09 3
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