Vishay IRLD120, SiHLD120 Data Sheet

N-Channel MOSFET

G

D

S

HVMDIP

D

S

G

Available

RoHS*

COMPLIANT

Power MOSFET

IRLD120, SiHLD120

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 100

()V

R

DS(on)

Q

(Max.) (nC) 12

g

Q

(nC) 3.0

gs

Q

(nC) 7.1

gd

Configuration Single

= 5.0 V 0.27

GS

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• For Automatic Insertion

• End Stackable

• Logic-Level Gate Drive

•R

DS(on)

• 175 °C Operating Temperature

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case
style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up to
1 W.

ORDERING INFORMATION

Package HVMDIP

Lead (Pb)-free

SnPb

IRLD120PbF
SiHLD120-E3
IRLD120
SiHLD120

Specified at VGS = 4 V and 5 V

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 5.0 V

GS

A

= 100 °C 0.94

A

DS

± 10

GS

I

D

IDM 10

Linear Derating Factor 0.0083 W/°C

Single Pulse Avalanche Energy

Avalanche Current

a

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

b

a

= 25 °C P

c

A

E

AS

I

AR

E

AR

D

dV/dt 5.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 25 V, starting TJ = 25 °C, L = 153 mH, Rg = 25 , IAS = 2.6 A (see fig. 12).

DD

c. I

 9.2 A, dI/dt  110 A/µs, VDD  VDS, TJ  175 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91310 www.vishay.com
S10-2465-Rev. C, 08-Nov-10 1

100

1.3

690 mJ

1.3 A

0.13 mJ

1.3 W

- 55 to + 175

d

V

AT

°C

IRLD120, SiHLD120

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

thJA

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 µs; duty cycle  2 %.

DS

GS(th)

V

GSS

DSS

DS(on)

fs

iss

- 150 -

oss

-30-

rss

g

--3.0

gs

--7.1

gd

d(on)

r

-21-

d(off)

-27-

f

D

V

V

GS

V

GS

V

GS

R

Between lead,
6 mm (0.25") from
package and center of

S

S

die contact

MOSFET symbol
showing the
integral reverse

I

SM

SD

rr

rr

on

p - n junction diode

TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/µs

- 120 °C/W

VGS = 0 V, ID = 250 µA 100 - - V

VDS = VGS, ID = 250 µA 1.0 - 2.0 V

= ± 10 V - - ± 100 nA

GS

VDS = 100 V, VGS = 0 V - - 25

= 80 V, VGS = 0 V, TJ = 150 °C - - 250

DS

= 5.0 V ID = 0.78 A

= 4.0 V ID = 0.65 A

VDS = 50 V, ID = 0.78 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

b

- - 0.27

- - 0.38

1.9 - - S

- 490 -

--12

= 9.2 A, VDS = 80 V,

I

= 5.0 V

D

see fig. 6 and 13

b

-9.8-

= 50 V, ID = 9.2 A,

V

DD

= 9.0 , RD = 5.2 , see fig. 10

g

G

G

TJ = 25 °C, IS = 1.3 A, VGS = 0 V

b

D

S

D

S

b

-64-

-4.0-

-6.0-

--1.3

--10

--2.5V

- 130 140 ns

b

- 0.83 1.0 µC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

µA



pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91310
2 S10-2465-Rev. C, 08-Nov-10

20 µs PULSE WIDTH
T

A

= 25 °C

20 µs PULSE WIDTH
T

A

= 175 °C

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRLD120, SiHLD120

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TA = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 175 °C

A

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91310 www.vishay.com
S10-2465-Rev. C, 08-Nov-10 3