VISHAY SiE830DF Datasheet

New Product

N-Channel 30-V (D-S) MOSFET

SiE830DF

Vishay Siliconix

PRODUCT SUMMARY

VDS (V)

0.0042 at V

30

0.0048 at V

Package Drawing

http://www.vishay.com/doc?73398

D

Top View Bottom View

Top surface is connected to pins 1, 5, 6, and 10

Ordering Information: SiE830DF-T1-E3 (Lead (Pb)-free)

r

DS(on)

(Ω)

GS

= 10 V

= 4.5 V

6 7 8 9 10

D S S G D

D S S G D 5 4 3 2 1

Silicon

Limit

120

112

PolarPAK

a

(A)

I

D

Package

Limit

67 8 9

50

Qg (Typ)

33 nC

10

FEATURES

• Extremely Low Q Low Switching Losses

• Ultra Low Thermal Resistance Using Top-Exposed PolarPAK Double-Sided Cooling

• Leadframe-Based New Encapsulated Package

- Die Not Exposed

- Same Layout Regardless of Die Size

• Low Q

• 100 % R

gd/Qgs

and UIS Tested

g

WFET® Technology for

gd

®

Package for

Ratio Helps Prevent Shoot-Through

RoHS

COMPLIANT

APPLICATIONS

•VRM

• Point-of-Load

• Synchronous Rectification

D

D D S G

G

1 4 3 2 5

S

N-Channel MOSFET

For Related Documents

http://www.vishay.com/ppg?74422

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

= 25 °C

T

C

= 70 °C

T

C

V

DS

V

GS

50

I

D

TA = 25 °C TA = 70 °C

Pulsed Drain Current I

T

= 25 °C

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current Avalanche Energy E

Maximum Power Dissipation

C

TA = 25 °C

T

= 25 °C

C

T

= 25 °C

C

T

= 70 °C 66

C

= 25 °C

T

A

DM

I

S

I

AS

P

D

TA = 70 °C

T

Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)

d, e

, T

J

stg

Notes: a. Package limited is 50 A. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 sec. d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 74422 S-70536-Rev. C, 26-Mar-07

30

± 12

120 (Silicon Limit)

a

(Package Limit)

a

50

b, c

27

b, c

21.6 80

a

50

b, c

4.3 30 A

45

104

b, c

5.2

b, c

3.3

- 50 to 150 260

V

A

mJ

W

°C

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New Product

SiE830DF

Vishay Siliconix

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain Top) Maximum Junction-to-Case (Source)

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package).

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V V

Temperature Coefficient ΔV

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage Gate-Source Leakage

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

Input Capacitance Output Capacitance Reverse Transfer Capacitance

Total Gate Charge Q

Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing.

b

a, b

a

a, c

a

t ≤ 10 sec R

Steady State

DS

DS /TJ

GS(th) /TJ

V

GS(th)

I

GSS

R

thJC

V

GS

VDS = V V

DS

V

DSS

I

V

D(on)

r

DS(on)

g

fs

C

iss

C

oss

C

rss

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

V

= 30 V, V

DS

V

= 15 V, V

V

DS

V

= 15 V, V

DS

V

= 15 V, V

DS

V

DD

≅ 10 A, V

I

D

V

DD

I

≅ 10 A, V

D

IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C

thJA

(Drain) 1 1.2

thJC

(Source)

= 0 V, ID = 250 µA

ID = 250 µA

, ID = 250 µA

GS

= 0 V, V

= 30 V, V

DS

≥ 5 V, V

DS

= 10 V, ID = 16 A

GS

= 4.5 V, ID = 15 A

GS

= 15 V, ID = 16 A

DS

= ± 12 V

GS

= 0 V

GS

= 0 V, TJ = 55 °C

GS

= 10 V

GS

20 24

2.8 3.4

30 V

30

- 4.8

0.6 1.4 2 V ± 100 nA

1

10

25 A

0.0035 0.0042

0.0039 0.0048 95 S

5500

= 0 V, f = 1 MHz

GS

650 220

= 10 V, ID = 20 A

GS

75 115 33 50

= 4.5 V, ID = 20 A

GS

11

5.1

f = 1 MHz 1.0 1.5 Ω

35 55

= 15 V, RL = 1.5 Ω

= 4.5 V, Rg = 1 Ω

GEN

105 160

70 105 95 145 15 25

= 15 V, RL = 1.5 Ω

= 10 V, Rg = 1 Ω

GEN

40 60 45 70 10 15

TC = 25 °C

50 80

IS = 10 A

0.8 1.2 V 40 60 ns 40 60 nC 22 18

°C/W

mV/°C

µA

Ω

pF

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 74422

S-70536-Rev. C, 26-Mar-07

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SiE830DF

Vishay Siliconix

80

VGS = 10 thru 3 V

60

40

Drain Current (A) -I

D

20

0

0.0 0.5 1.0 1.5 2.0

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

0.0044

0.0042

) ( ecnatsiseR-nO

-

)no(SD

r

0.0040

0.0038

0.0036

0.0034

0.0032

0.0030 0204060

= 4.5 V

V

GS

V

= 10 V

GS

I

- Drain Current (A)

D

On-Resistance vs. Drain Current

20

16

)A( tnerruC niarD -I

12

8

D

4

= 2 V

V

GS

0

1.0 1.4 1.8 2.2 2.6 3.0

TC = 125 °C

TC = 25 °C

V

GS

TC = - 55 °C

- Gate-to-Source Voltage (V)

Transfer Characteristics

7200

C

6000

) F p ( e c n a t i c a

4800

3600

p a C -

2400

C

1200

80

iss

C

oss

C

rss

0

0 5 10 15 20 25 30

V

- Drain-to-Source Voltage (V)

DS

Capacitance

10

)V( e

g atl

o V ecruoS-ot-etaG

-

SG

V

ID = 20 A

8

6

4

2

0

020406080

Gate Charge

Document Number: 74422 S-70536-Rev. C, 26-Mar-07

VDS = 15 V

VDS = 32 V

Qg - Total Gate Charge (nC)

1.8

I D = 16 A

1.6

e c n a t s i

1.4

)dezilamroN(

s e R

-

1.2

n O -

) n o (

1.0

S D

r

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

V

= 4.5 V, 10 V

GS

- Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

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