VISHAY SiE810DF Datasheet

SiE810DF

PRODUCT SUMMARY

VDS (V) r

0.0014 at V

0.0016 at V

20

0.0027 at V

Package Drawing

http://www.vishay.com/doc?72945

DS(on)

GS

(Ω)

= 10 V 236

= 4.5 V 221

= 2.5 V 178

6 7 8 9 10 D S S G D

New Product

N-Channel 20-V (D-S) MOSFET

FEATURES

• TrenchFET® Gen II Power MOSFET

• Ultra Low Thermal Resistance Using Top-Exposed PowerPAK Double-Sided Cooling

• Leadframe-Based New Encapsulated Package

- Die Not Exposed

- Same Layout Regardless of Die Size

• Low Q

gd/Qgs

• 100 % R

APPLICATIONS

•VRM

• DC/DC Conversion: Low-Side

• Synchronous Rectification

Silicon

Limit

PolarPAK

67 8 9

(A)

I

D

Packag e

Limit

60

Q

g

90 nC

(Typ)

10

Vishay Siliconix

®

Package for

Ratio Helps Prevent Shoot-Through

and UIS Tested

g

D

RoHS

COMPLIANT

D

D S S G D 5 4 3 2 1

Top View Bottom View

Top surface is connected to pins 1, 5, 6, and 10

Ordering Information: SiE810DF-T1-E3 (Lead (Pb)-free)

D D S G

G

1 4 3 2 5

N-Channel MOSFET

For Related Documents

http://www.vishay.com/ppg?73774

S

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage V Gate-Source Voltage V

= 25 °C

T

C

Continuous Drain Current (T

= 150 °C)

J

= 70 °C

T

C

DS

GS

60

I

D

TA = 25 °C TA = 70 °C

Pulsed Drain Current I

= 25 °C

T

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current Avalanche Energy E

Maximum Power Dissipation

C

TA = 25 °C

L = 0.1 mH

= 25 °C

T

C

T

= 70 °C 80

C

= 25 °C

T

A

DM

I

S

I

AS

P

D

TA = 70 °C

T

Operating Junction and Storage Temperature Range

d, e

Soldering Recommendations (Peak Temperature)

Notes: a. Package limited is 60 A. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 sec. d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

, T

J

stg

Document Number: 73774 S-62479-Rev. A, 04-Dec-06

20

± 12

221 (Silicon Limit)

a

(Package Limit)

a

60

b, c

45

b, c

36

100

a

60

b, c

4.3 27

36 mJ

125

b, c

5.2

b, c

3.3

- 50 to 150 260

V

A

W

°C

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SiE810DF

Vishay Siliconix

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a, b

Maximum Junction-to-Foot (Source)

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package).

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔV

V

DS

Temperature Coefficient ΔV

V

GS(th)

Gate-Source Threshold Voltage V Gate-Source Leakage I

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

Input Capacitance Output Capacitance Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing.

a

a, c

t ≤ 10 sec R

Steady State

DS

DS /TJ

GS(th) /TJ

GS(th)

GSS

I

DSS

I

D(on)

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

R

V

DS

IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C

thJA

(Drain) 0.8 1

thJC

(Source)

thJC

V

= 0 V, ID = 250 µA

GS

20 24

2.2 2.7

20 V

ID = 250 µA

VDS = V V

DS

V

= 20 V, V

V

DS

V V V

V

= 10 V, V

DS

V

= 10 V, V

DS

= 10 V, V

DS

GS

, ID = 250 µA

GS

= 0 V, V

= 20 V, V

≥ 5 V, V

= 10 V, ID = 25 A

GS

= ± 12 V

GS

= 0 V, TJ = 55 °C

GS

= 4.5 V, ID = 25 A = 2.5 V, ID = 25 A

= 10 V, ID = 25 A

DS

= 0 V, f = 1 MHz

GS

= 10 V, ID = 20 A

GS

= 4.5 V, ID = 20 A

GS

= 0 V

= 4.5 V

0.8 1.3 2 V

25 A

f = 1 MHz 0.9 1.35 Ω

= 10 V, RL = 1 Ω

V

DD

≅ 10 A, V

I

D

≅ 10 A, V

I

D

V

= 4.5 V, Rg = 1 Ω

GEN

= 10 V, RL = 1 Ω

DD

= 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 10 A

21.5

- 5

± 100 nA

1

10

0.0011 0.0014

0.0013 0.0016

0.0022 0.0027 163 S

13000

1600 1000

200 300

90 135 21 19

40 60 95 145 95 145 15 25 20 30 70 105

100 150

10 15

60

100

0.9 1.2 V 60 90 ns 65 100 nC 27 ns 33

°C/WMaximum Junction-to-Foot (Drain Top) Steady State R

mV/°C

µA

Ω

pF

nC

ns

A

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 73774

S-62479-Rev. A, 04-Dec-06

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SiE810DF

Vishay Siliconix

100

80

)A( tnerruC niarD -I

60

40

D

20

0

0.0 0.1 0.2 0.3 0.4 0.5

- Drain-to-Source Voltage (V)

V

DS

VGS = 5 thru 2.5 V

VGS = 1.5 V

Output Characteristics

0.0026

(Ω) ecnatsis

e R-nO

-

)no(SD

r

0.0022

0.0018

0.0014

VGS = 2.5 V

VGS = 4.5 V

VGS = 2 V

20

16

)A( tnerruC niarD -I

12

8

D

4

0

0.0 0.5 1.0 1.5 2.0 2.5

V

GS

TC = 125 °C

TC = 25 °C

- Gate-to-Source Voltage (V)

Transfer Characteristics

18000

)Fp( ecnati

c a pa

C

- C

15000

12000

9000

6000

3000

C

oss

C

iss

TC = - 55 °C

0.0010 0 20406080100

- Drain Current (A)

I

D

On-Resistance vs. Drain Current and Gate Voltage

10

)V( e

g atl

o V ecruoS-ot-etaG

-

SG

V

ID = 25 A

8

6

4

2

0

0 30 60 90 120 150 180 210

Qg - Total Gate Charge (nC)

VDS = 10 V

VDS = 16 V

Gate Charge

Document Number: 73774 S-62479-Rev. A, 04-Dec-06

C

rss

0

05101520

VDS - Drain-to-Source Voltage (V)

Capacitance

1.8

ID = 25 A

1.6

e cn

1.4

a

t

)

sis

d ezi

eR

l

-

a

1.2

nO

m ro

N

)

(

n o(SD

1.0

r

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature (°C)

T

J

VGS = 4.5 V

VGS = 2.5 V

On-Resistance vs. Junction Temperature

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