VISHAY SiE808DF Datasheet

SiE808DF

PRODUCT SUMMARY

VDS (V)

0.0016 at V

20

0.0025 at V

Package Drawing

r

DS(on)

D

e

(Ω)

= 10 V 220

GS

= 4.5 V 117

GS

678910 DSSGD

New Product

N-Channel 20-V (D-S) MOSFET

FEATURES

ID (A)

Silicon

Packag e

Limit

PolarPAK

67 89

a

Limit

60

Qg (Typ)

46 nC

10

DDSG

• TrenchFET® Gen II Power MOSFET

• Ultra Low Thermal Resistance Using Top-Exposed PolarPAK Double-Sided Cooling

• Leadframe-Based New Encapsulated Package

- Die Not Exposed

- Same Layout Regardless of Die Size

• Low Q

gd/Qgs

• 100 % R

APPLICATIONS

•VRM

• DC/DC Conversion: Low-Side

• Synchronous Rectification

Vishay Siliconix

®

Package for

Ratio Helps Prevent Shoot-Through

and UIS Tested

g

D

RoHS

COMPLIANT

DSSGD 54321

Top View Bottom View

Top surface is connected to pins 1, 5, 6, and 10

Ordering Information: SiE808DF-T1-E3 (Lead (Pb)-free)

14325

For Related Documents

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol

Drain-Source Voltage V Gate-Source Voltage V

T

= 25 °C

C

= 70 °C

Continuous Drain Current (T

= 150 °C)

J

T

C

DS

GS

I

D

TA = 25 °C TA = 70 °C

Pulsed Drain Current I

= 25 °C

T

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current Avalanche Energy E

Maximum Power Dissipation

C

TA = 25 °C

L = 0.1 mH

= 25 °C

T

C

T

= 70 °C 80

C

= 25 °C

T

A

DM

I

S

I

AS

P

D

TA = 70 °C

T

Operating Junction and Storage Temperature Range

d, e

Soldering Recommendations (Peak Temperature)

Notes: a. Package limited is 60 A. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 sec. d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

, T

J

stg

Document Number: 73739 S-60621-Rev. A, 24-Apr-06

Limit

20

± 20

220 (Silicon Limit)

a

60

(Package Limit)

a

60

b, c

45

b, c

36

100

a

60

b, c

4.3 35

61 mJ

125

b, c

5.2

b, c

3.3

- 50 to 150 260

Unit

V

A

W

°C

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SiE808DF

Vishay Siliconix

THERMAL RESISTANCE RATINGS

Parameter Symbol

Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain Top) Maximum Junction-to-Case (Source)

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package).

a, b

a, c

t ≤ 10 sec R

Steady State

R

thJA

(Drain) 0.8 1

R

thJC

(Source) 2.2 2.7

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Static

V

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔV

V

DS

Temperature Coefficient ΔV

V

GS(th)

Gate-Source Threshold Voltage V Gate-Source Leakage I

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance Output Capacitance Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time

DS

DS /TJ

GS(th) /TJ

GS(th)

GSS

I

DSS

I

V

D(on)

r

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing.

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

V

DS

V

DS

V

DS

I

D

I

D

IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C

GS

VDS = V V

DS

V

DS

= 20 V, V

DS

V

GS

V

GS

V

DS

= 10 V, V

DS

= 10 V, V

V

DD

≅ 10 A, V

V

DD

≅ 10 A, V

= 0 V, V

= 0 V, ID = 250 µA

ID = 250 µA

, ID = 250 µA

GS

= ± 20 V

GS

= 20 V, V

≥ 5 V, V

GS

= 0 V, TJ = 55 °C

GS

= 10 V, ID = 25 A = 4.5 V, ID = 25 A

= 10 V, ID = 25 A

= 0 V, f = 1 MHz

GS

= 10 V, ID = 25 A

GS

= 4.5 V, ID = 20 A

GS

f = 1 MHz 0.9 1.35 Ω

= 10 V, RL = 1 Ω

= 4.5 V, Rg = 1 Ω

GEN

= 10 V, RL = 1 Ω

= 10 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 10 A

Typical Maximum

20 24

20 V

1.5 2.3 3 V

= 0 V

= 10 V

25 A

Unit

°C/W

26.5

- 7.3

mV/°C

± 100 nA

1

10

0.0013 0.0016

0.0021 0.0025

µA

Ω

95 S

8800 1600

pF 600 102 155

46 70 26

nC

8

180 270 215 325

50 75 15 25 25 40 55 85

ns

55 85 10 15

60

100

A

0.8 1.2 V 56 85ns 60 90 nC 26 30

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 73739

S-60621-Rev. A, 24-Apr-06

TYPICAL CHARACTERISTICS 25 °C, unless noted

SiE808DF

Vishay Siliconix

100

80

)A( tnerruC niarD –I

60

40

D

20

0

0.00 0.05 0.10 0.15 0.20 0.25 0.30

V

– Drain-to-Source Voltage (V)

DS

VGS = 10 thru 5 V

Output Characteristics

0.0030

)

0.0026

(Ω ecnatsis

e R-nO

–

)no(SD

r

0.0022

0.0018

0.0014

VGS = 4.5 V

VGS = 10 V

VGS = 4 V

VGS = 3 V

20

16

)A( tnerruC niarD –I

12

8

D

4

0

1.5 2.0 2.5 3.0 3.5 4.0

TC = 125 °C

TC = 25 °C

– Gate-to-Source Voltage (V)

V

GS

Transfer Characteristics

)Fp( ecnati

c a pa

C –

C

10000

8000

6000

4000

2000

C

oss

C

rss

C

iss

TC = - 55 °C

0.0010 0 20406080100

I

– Drain Current (A)

D

On-Resistance vs. Drain Current and Gate Voltage

10

)V( e

g atl

o V ecruoS-ot-etaG

–

SG

V

ID = 20 A

8

VDS = 10 V

6

VDS = 16 V

4

2

0

0 20406080100120

Qg – Total Gate Charge (nC)

Gate Charge

Document Number: 73739 S-60621-Rev. A, 24-Apr-06

0

05101520

VDS – Drain-to-Source Voltage (V)

Capacitance

1.6

VGS = 4.5 V, 10 V

= 25 A

I

1.4

ecnatsi

)dezilamroN(

1.2

s eR

nO –

1.0

) no(

S D

r

0.8

0.6

- 50 - 25 0 25 50 75 100 125 150

– Junction Temperature (°C)

T

J

D

On-Resistance vs. Junction Temperature

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