VISHAY SiC531, SiC531A Datasheet

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30 A VRPower® Integrated Power Stage

SiC531, SiC531A

Vishay Siliconix

DESCRIPTION

The SiC531 and SiC531A are integrated power stage
solutions optimized for synchronous buck applications
to offer high current, high efficiency, and high power
density performance. Packaged in Vishay’s proprietary

4.5 mm x 3.5 mm MLP package, SiC531 and SiC531A
enable voltage regulator designs to deliver up to 30 A
continuous current per phase.

The internal power MOSFETs utilize Vishay’s
state-of-the-art Gen IV TrenchFET
industry benchmark performance to significantly reduce
switching and conduction losses.

The SiC531 and SiC531A incorporate an advanced
MOSFET gate driver IC that features high current driving
capability, adaptive dead-time control, an integrated
bootstrap Schottky diode, and zero current detection to
improve light load efficiency. The drivers are also
compatible with a wide range of PWM controllers, support
tri-state PWM, and 3.3 V (SiC531A) / 5 V (SiC531) PWM
logic.

®

technology that delivers

FEATURES

• Thermally enhanced PowerPAK® MLP4535-22L
package

• Vishay’s Gen IV MOSFET technology and a
low-side MOSFET with integrated Schottky
diode

• Delivers up to 30 A continuous current, 35 A at 10 ms peak
current

• High efficiency performance

• High frequency operation up to 1.5 MHz

• Power MOSFETs optimized for 19 V input stage

• 3.3 V (SiC531A) / 5 V (SiC531) PWM logic with tri-state and
hold-off

• Zero current detect control for light load efficiency
improvement

• Low PWM propagation delay (< 20 ns)

• Under voltage lockout for V

CIN

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

APPLICATIONS

• Multi-phase VRDs for computing, graphics card and
memory

• Intel IMVP-8 VRPower delivery

- V

- V

• Up to 18 V rail input DC/DC VR modules

CORE

, V

GRAPHICS

, V

platforms

for Apollo Lake platforms

CCGI

SYSTEM AGENT

Skylake, Kabylake

TYPICAL APPLICATION DIAGRAM

5V V

V

DRV

V

CIN

ZCD_EN#

PWM

controller

S20-0486-Rev. B, 29-Jun-2020

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PWM

Fig. 1 - SiC531 and SiC531A Typical Application Diagram

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Gate

driver

G

C

L

GND

V

IN

BOOT

PHASE

V

SWH

P

GND

1

Document Number: 65999

IN

V

OUT

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1

2

3

4

5

ZCD_EN#

V

CIN

C

GND

BOOT

PHASE

16

15

14

13

12

V

SWH

V

SWH

V

SWH

V

SWH

V

SWH

11 10 9 8 7 6

17 18 19 20 21 22

P

GNDPGNDPGND

P

GND

P

GND

GL

V

DRV

P

GND

VINVINV

IN

P

GND

26

V

IN

25

C

GND

23

GL

24

PINOUT CONFIGURATION

SiC531, SiC531A

Vishay Siliconix

Fig. 2 - SiC531 and SiC531A Pin Configuration

PIN DESCRIPTION

PIN NUMBER NAME FUNCTION

The ZCD_EN# pin enables or disables Diode Emulation. When ZCD_EN# is low, diode

1 ZCD_EN#

2V

3, 23 C

CIN

GND

4 BOOT High-side driver bootstrap voltage

5 PHASE Return path of high-side gate driver

6 to 8, 25 V

9 to 11, 17, 18, 20, 26 P

12 to 16 V

IN

GND

SWH

19, 24 GL Low-side MOSFET gate signal

21 V

DRV

22 PWM PWM input logic

ORDERING INFORMATION

PART NUMBER PACKAGE MARKING CODE

SiC531CD-T1-GE3

SiC531ACD-T1-GE3 SiC531A 3.3 V PWM optimized

SiC531ADB and SiC531DB Reference board




S20-0486-Rev. B, 29-Jun-2020

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

emulation is allowed. When ZCD_EN# is high, continuous conduction mode is forced.
ZCD_EN# can also be put in a high impedance mode by floating the pin. If both
ZCD_EN# and PWM are floating, the device shuts down and consumes typically 3 μA
(9 μA max.) current

Supply voltage for internal logic circuitry

Signal ground

Power stage input voltage. Drain of high-side MOSFET

Power ground

Phase node of the power stage

Supply voltage for internal gate driver

PowerPAK

®

MLP4535-22L

2

SiC531 5 V PWM optimized

Document Number: 65999

SiC531, SiC531A

= pin 1 indicator

P/N = part number code

= Siliconix logo

=ESD symbol

F

Y = year code

WW

LL

F Y W W

P/N

LL

= assembly factory code

= week code

= lot code

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PART MARKING INFORMATION

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL PARAMETER CONDITIONS LIMIT UNIT

Input voltage V

Control logic supply voltage V

Drive supply voltage V

Switch node (DC voltage)

Switch node (AC voltage)

BOOT voltage (DC voltage)

BOOT voltage (AC voltage)

BOOT to PHASE (DC voltage)

BOOT to PHASE (AC voltage)

All logic inputs and outputs
(PWM and ZCD_EN#)

Max. operating junction temperature T

Storage temperature T

Electrostatic discharge protection

Note

(1)

The specification values indicated “AC” is V

(2)

The specification value indicates “AC voltage” is V

(3)

The specification value indicates “AC voltage” is V



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

(1)

(2)

(3)

Human body model, JESD22-A114 3000

Charged device model, JESD22-C101 1000

to P

SWH

, -8 V (< 20 ns, 10 μJ), min. and 30 V (< 50 ns), max.

GND

to P

BOOT

to V

BOOT



IN

CIN

DRV

V

SWH

V

BOOT

V

BOOT- PHASE

J

A

stg

, 36 V (< 50 ns) max.

GND

, 8 V (< 20 ns) max.

PHASE

-0.3 to 28

-0.3 to 7

-0.3 to 7

-0.3 to 28

-8 to 35

33

40

-0.3 to 7

-0.3 to 8

-0.3 to V

150

-40 to 125

-65 to 150

Vishay Siliconix

+0.3

CIN

V

°CAmbient temperature T

V

RECOMMENDED OPERATING RANGE

ELECTRICAL PARAMETER MINIMUM TYPICAL MAXIMUM UNIT

Input voltage (V

Drive supply voltage (V

Control logic supply voltage (V

BOOT to PHASE (V

Thermal resistance from junction to PCB - 5 -

Thermal resistance from junction to case - 2.5 -

S20-0486-Rev. B, 29-Jun-2020

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

)4.5-24

IN

) 4.555.5

DRV

BOOT-PHASE

, DC voltage) 4 4.5 5.5

) 4.555.5

CIN

V

°C/W

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3

Document Number: 65999

SiC531, SiC531A

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ELECTRICAL SPECIFICATIONS

(ZCD_EN# = 5 V, V

PARAMETER SYMBOL TEST CONDITION

POWER SUPPLY

Control logic supply current I

Drive supply current I

BOOTSTRAP SUPPLY

Bootstrap diode forward voltage V

PWM CONTROL INPUT (SiC531)

Rising threshold V

Falling threshold V

Tri-state voltage V

Tri-state rising threshold V

Tri-state falling threshold V

Tri-state rising threshold hysteresis V

Tri-state falling threshold hysteresis V

PWM input current I

PWM CONTROL INPUT (SiC531A)

Rising threshold V

Falling threshold V

Tri-state voltage V

Tri-state rising threshold V

Tri-state falling threshold V

Tri-state rising threshold hysteresis V

Tri-state falling threshold hysteresis V

PWM input current I

TIMING SPECIFICATIONS

Tri-state to GH/GL rising
propagation delay

Tri-state hold-off time t

GH - turn off propagation delay t

GH - turn on propagation delay
(dead time rising)

GL - turn off propagation delay t

GL - turn on propagation delay
(dead time falling)

PWM minimum on-time t

ZCD_EN# INPUT

ZCD_EN# logic input voltage

PROTECTION

Under voltage lockout V

Under voltage lockout hysteresis V

Notes

(1)

Typical limits are established by characterization and are not production tested

(2)

Guaranteed by design

S20-0486-Rev. B, 29-Jun-2020

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

= 12 V, V

IN

DRV

and V

= 5 V, TA = 25 °C)

CIN

MIN. TYP. MAX.

VCIN

No switching, V

= 300 kHz, D = 0.1 - 300 -

f

S

= FLOAT - 300 -

PWM

fS = 300 kHz, D = 0.1 - 8 15

= 1 MHz, D = 0.1 - 30 -

VDRV

F

TH_PWM_R

TH_PWM_F

TRI

TRI_TH_R

TRI_TH_F

HYS_TRI_R

HYS_TRI_F

PWM

TH_PWM_R

TH_PWM_F

TRI

TRI_TH_R

TRI_TH_F

HYS_TRI_R

HYS_TRI_F

PWM

t

PD_TRI_R

TSHO

PD_OFF_GH

t

PD_ON_GH

PD_OFF_GL

t

PD_ON_GL

PWM_ON_MIN

V

IH_ZCD_EN#

V

IL_ZCD_EN#

UVLO

UVLO_HYST

f

S

No switching, V

= FLOAT - 50 - μA

PWM

IF = 2 mA - - 0.4 V

3.4 3.7 4.0

0.72 0.9 1.1

V

= FLOAT - 2.3 -

PWM

0.9 1.15 1.38

3.1 3.35 3.6

V

= 5 V - - 350

PWM

= 0 V - - -350

V

PWM

2.2 2.45 2.7

0.72 0.9 1.1

V

= FLOAT - 1.8 -

PWM

0.9 1.15 1.38

1.95 2.2 2.45

V

= 3.3 V - - 225

PWM

= 0 V - - -225

V

PWM

No load, see fig. 4

30 - -

Input logic high 2 - - V

Input logic low - - 0.8

V

rising, on threshold - 3.7 4.1

CIN

falling, off threshold 2.7 3.1 -

V

CIN

4

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Vishay Siliconix

LIMITS

- 225 -

- 325 -

- 225 -

- 275 -

-20-

- 150 -

-20-

-10-

-20-

-10-

- 575 - mV

Document Number: 65999

UNIT

μA

mA

V

mV

μA

V

mV

μA

ns

V

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DETAILED OPERATIONAL DESCRIPTION

PWM Input with Tri-state Function

The PWM input receives the PWM control signal from the VR
controller IC. The PWM input is designed to be compatible
with standard controllers using two state logic (H and L) and
advanced controllers that incorporate tri-state logic (H, L,
and tri-state) on the PWM output. For two state logic, the
PWM input operates as follows. When PWM is driven above
V

PWM_TH_R

turned on. When PWM input is driven below V
high-side is turned off and the low-side is turned on. For
tri-state logic, the PWM input operates as previously stated
for driving the MOSFETs when PWM is logic high and logic
low. However, there is a third state that is entered as the
PWM output of tri-state compatible controller enters its high
impedance state during shut-down. The high impedance
state of the controller’s PWM output allows the SiC531 and
SiC531A to pull the PWM input into the tri-state region (see
definition of PWM logic and tri-state, fig. 4). If the PWM input
stays in this region for the tri-state hold-off period, t
both high-side and low-side MOSFETs are turned off. The
function allows the VR phase to be disabled without
negative output voltage swing caused by inductor ringing
and saves a Schottky diode clamp. The PWM and tri-state
regions are separated by hysteresis to prevent false
triggering. The SiC531A incorporates PWM voltage
thresholds that are compatible with 3.3 V logic and the
SiC531 thresholds are compatible with 5 V logic.

Diode Emulation Mode (ZCD_EN#)

When ZCD_EN# pin is logic low and PWM signal switches
low, GL is forced ON (after normal BBM time). During this
time, it is under control of the ZCD (zero crossing detect)
comparator. If, after the internal blanking delay, the inductor
current becomes zero, the low-side is turned OFF. This
improves light load efficiency by avoiding discharge of
output capacitors. If PWM enters tri-state, then device will
go into normal tri-state mode after tri-state delay. The GL
output will be turned OFF regardless of Inductor current, this
is an alternative method of improving light load efficiency by
reducing switching losses.

Voltage Input (V

This is the power input to the drain of the high-side power
MOSFET. This pin is connected to the high power
intermediate BUS rail.

Switch Node (V

The switch node, V
This is the output applied to the power inductor and output
filter to deliver the output for the buck converter. The PHASE
pin is internally connected to the switch node, V
is to be used exclusively as the return pin for the BOOT
capacitor. A 20 k resistor is connected between GH and
PHASE to provide a discharge path for the HS MOSFET in
the event that V




the low-side is turned off and the high-side is

PWM_TH_F

)

IN

and PHASE)

SWH

, is the circuit power stage output.

SWH

SWH

goes to zero while VIN is still applied.

CIN

the

TSHO

. This pin

SiC531, SiC531A

Vishay Siliconix

Ground Connections (C

P

(power ground) should be externally connected to

GND

C

(signal ground). The layout of the printed circuit board

GND

should be such that the inductance separating C

is minimized. Transient differences due to inductance

P

GND

effects between these two pins should not exceed 0.5 V.

Control and Drive Supply Voltage Input (V

V

is the bias supply for the gate drive control IC. V

CIN

the bias supply for the gate drivers. It is recommended to
separate these pins through a resistor. This creates a low
pass filtering effect to avoid coupling of high frequency gate
drive noise into the IC.

Bootstrap Circuit (BOOT)

The internal bootstrap diode and an external bootstrap
capacitor form a charge pump that supplies voltage to the
BOOT pin. An integrated bootstrap diode is incorporated so

,

that only an external capacitor is necessary to complete the
bootstrap circuit. Connect a boot strap capacitor with one
leg tied to BOOT pin and the other tied to PHASE pin.

Shoot-Through Protection and Adaptive Dead Time

The SiC531 and SiC531A have an internal adaptive logic to
avoid shoot through and optimize dead time. The shoot
through protection ensures that both high-side and low-side
MOSFETs are not turned on at the same time. The adaptive
dead time control operates as follows. The high-side and
low-side gate voltages are monitored to prevent the
MOSFET turning on from tuning on until the other
MOSFET’s gate voltage is sufficiently low (< 1 V). Built in
delays also ensure that one power MOSFET is completely
off, before the other can be turned on. This feature helps to
adjust dead time as gate transitions change with respect to
output current and temperature.

Under Voltage Lockout (UVLO)

During the start up cycle, the UVLO disables the gate
drive, holding high-side and low-side MOSFET gates low,
until the supply voltage rail has reached a point at which
the logic circuitry can be safely activated. The SiC531 and
SiC531A also incorporate logic to clamp the gate drive
signals to zero when the UVLO falling edge triggers the
shutdown of the device. As an added precaution, a 20 k
resistor is connected between GH and PHASE to provide a
discharge path for the HS MOSFET.

GND

and P

GND

)

and

GND

, V

CIN

)

DRV

is

DRV

S20-0486-Rev. B, 29-Jun-2020

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

5

Document Number: 65999