VISHAY Si9978DW Datasheet

Si9978DW

Configurable H-Bridge Driver

FEATURES

• H-Bridge or Dual Half-Brid ge Operation

• 20- to 40-V Supply

• Static (dc) Operation

DESCRIPTION

The Si9978DW is an integrated driver for an n-channel
MOSFET H-bridge. The mode control allows operation as
either a full H-bridge driver or as two independent
half-bridges. The DIR/PWM input configuration allows easy
implementation of either sign/magnitude or anti-phase PWM
drive schemes for full H-bridges. Schmitt triggers on the
inputs provide logic signal compatibility and hysteresis for
increased noise immunity. An internal low-voltage regulator
allows the device to be powered directly from a system supply
of 20 to 40 volts. All n-channel gates are driven directly from
low-impedance outputs. The addition of one external

• Cross-Conduction Protected

• Current Limit

• Undervoltage Lockout

• ESD Protected

• Fault Output

capacitor per half -bridge allows in terna l circuitr y to level shift
both the power supply and logic signal for the high-side
n-channel gate drives. Internal charge pumps replace l eak ag e

current lost in the high-side driver cir cuits to provide “stati c”
(dc) operation in any output condition. Protection features
include an undervoltage lockout, cross-conduction prevention
logic, and overcurrent monitors.

The Si9978DW is available in the 24-pin wide-body SOIC
(surface mount) package, specified to operate over the
industrial (-40 to +85°C) temperature range.

Vishay Siliconix

Si9978

FUNCTIONAL BLOCK DIAGRAM

FaxBack 408-970-5600, request 70011 S-60752—Rev. D, 05-Apr-99
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Si9978DW

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Voltage on pins 2-7 with respect to ground. . . . . . -0.3 to V

DD

+ 0.3 V

Voltage on pin 24 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to 50 V

Voltage on pins 17, 19, 21, 23 . . . . . . . . . . . . . . . . . . . . -0.3 to +60 V

Voltage on pins 18, 22 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-2 to 50 V

Operating Temperature (T

). . . . . . . . . . . . . . . . . . . . . . . - 40 to +85°C

A

Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . .-65 to 150°C

Maximum Junction Temperature (T

). . . . . . . . . . . . . . . . . . . . . 150°C

J

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW

RECOMMENDED OPERATING CONDITIONS

V+. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20 to 40 V

RA, RB. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 k

DC

Ω

SPECIFICATIONS

Test Conditions

Parameter Symbol

Unless Otherwise Specified

V+ = 20 to 40 V

a

Power

Supply Voltage Range V+ 20 40
Logic Voltage V

DD

Supply Current I+ I

= 0 mA 3 5 mA

DD

14.5 16 17.5

Inputs (DIR, PWM, EN, QS, MODE, BRK)

High-State V
Low-State V
High-State Input Current I

Low-State Input Current I

IH

IL
IH
IL

VIH = V

DD

VIL = 0 V -100 -50 -25

4.0

Outputs

Low-Side Gate Drive, High State V
Low-Side Gate Drive, Low State V
High-Side Gate Drive, High State V
High-Side Gate Drive, Low State V
Capacitor Voltage

c

Low-Side Switching, Rise Time t
Low-Side Switching, Fall Time t
High-Side Switching, Rise Time t
High-Side Switching, Fall Time t

V

GBH

GBL
GTH
GTL
CAP

rL
fL
rH
fH

S

= 0 V

A, B

V+ = 40 V 55

Rise Time = 1 to 10 V

Fall Time = 10 to 1 V

= 600 pF

C

L

Break-Before-Make Time 250

, CL V

FAULT

, CL Leakage Current I

FAULT

OL

OH

IOL = 1 mA 0.4 V

FAULT, CL = V

DD

14 16 17.5

14 16 18

Protection

Low-Side Undervoltage Lockout UVLL 0.8 V

H

High-Side Undervoltage Lockout UVLH S

= 0 V VDD-3.3 V

A, B

Limits

-40 to 85°C

b

Typ

110

50

110

50

0.2 10 µA

DD

0.8

Max

1.0
10

1

1

a

UnitMin

V

V

µA

V

ns

VLow-Side Hysteresis V

S-60752—Rev. D, 05-Apr-99 FaxBack 408-970-5600, request 70011

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